DE69504254T2 - Vorrichtung und Verfahren zur Halbleitersbearbeitung - Google Patents

Vorrichtung und Verfahren zur Halbleitersbearbeitung

Info

Publication number
DE69504254T2
DE69504254T2 DE69504254T DE69504254T DE69504254T2 DE 69504254 T2 DE69504254 T2 DE 69504254T2 DE 69504254 T DE69504254 T DE 69504254T DE 69504254 T DE69504254 T DE 69504254T DE 69504254 T2 DE69504254 T2 DE 69504254T2
Authority
DE
Germany
Prior art keywords
processing apparatus
semiconductor processing
semiconductor
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69504254T
Other languages
English (en)
Other versions
DE69504254D1 (de
Inventor
Ajit Pramod Paranjpe
Cecil J Davis
Robert T Matthews
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69504254D1 publication Critical patent/DE69504254D1/de
Publication of DE69504254T2 publication Critical patent/DE69504254T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
DE69504254T 1994-06-30 1995-06-29 Vorrichtung und Verfahren zur Halbleitersbearbeitung Expired - Fee Related DE69504254T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/269,414 US5580385A (en) 1994-06-30 1994-06-30 Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber

Publications (2)

Publication Number Publication Date
DE69504254D1 DE69504254D1 (de) 1998-10-01
DE69504254T2 true DE69504254T2 (de) 1999-04-08

Family

ID=23027137

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69504254T Expired - Fee Related DE69504254T2 (de) 1994-06-30 1995-06-29 Vorrichtung und Verfahren zur Halbleitersbearbeitung

Country Status (6)

Country Link
US (2) US5580385A (de)
EP (1) EP0690666B1 (de)
JP (1) JPH08195297A (de)
KR (1) KR100373815B1 (de)
DE (1) DE69504254T2 (de)
TW (1) TW501842U (de)

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Also Published As

Publication number Publication date
KR100373815B1 (ko) 2003-05-01
KR960002631A (ko) 1996-01-26
EP0690666B1 (de) 1998-08-26
US5591493A (en) 1997-01-07
JPH08195297A (ja) 1996-07-30
US5580385A (en) 1996-12-03
EP0690666A1 (de) 1996-01-03
DE69504254D1 (de) 1998-10-01
TW501842U (en) 2002-09-01

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