Classifications

• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
  • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
  • F02P7/00—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices
  • F02P7/02—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors
  • F02P7/03—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors with electrical means
  • F02P7/035—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors with electrical means without mechanical switching means
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
  • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
  • F02P15/00—Electric spark ignition having characteristics not provided for in, or of interest apart from, groups F02P1/00 - F02P13/00 and combined with layout of ignition circuits
  • F02P15/001—Ignition installations adapted to specific engine types
  • F02P15/003—Layout of ignition circuits for gas turbine plants
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
  • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
  • H01L29/0839—Cathode regions of thyristors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
  • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
  • F02P17/00—Testing of ignition installations, e.g. in combination with adjusting; Testing of ignition timing in compression-ignition engines
  • F02P17/12—Testing characteristics of the spark, ignition voltage or current

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Chemical & Material Sciences (AREA)
• Combustion & Propulsion (AREA)
• Mechanical Engineering (AREA)
• General Engineering & Computer Science (AREA)
• Thyristors (AREA)
• Control Of Eletrric Generators (AREA)
• Generation Of Surge Voltage And Current (AREA)
• Control Of Turbines (AREA)
• Ignition Installations For Internal Combustion Engines (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

ID=22771712

Family Applications (1)

Country Status (7)

Families Citing this family (20)

Family Cites Families (17)

• 1994
  • 1994-03-09 US US08/207,717 patent/US5592118A/en not_active Expired - Lifetime
• 1995
  • 1995-03-09 EP EP95919732A patent/EP0749528B1/de not_active Expired - Lifetime
  • 1995-03-09 CA CA002185125A patent/CA2185125C/en not_active Expired - Fee Related
  • 1995-03-09 DE DE69505506T patent/DE69505506T2/de not_active Expired - Lifetime
  • 1995-03-09 AT AT95919732T patent/ATE172519T1/de not_active IP Right Cessation
  • 1995-03-09 WO PCT/US1995/003078 patent/WO1995024554A2/en active IP Right Grant
  • 1995-05-09 AU AU25431/95A patent/AU2543195A/en not_active Abandoned

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