DE69508358T2 - Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten - Google Patents
Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten KristalldefektenInfo
- Publication number
- DE69508358T2 DE69508358T2 DE69508358T DE69508358T DE69508358T2 DE 69508358 T2 DE69508358 T2 DE 69508358T2 DE 69508358 T DE69508358 T DE 69508358T DE 69508358 T DE69508358 T DE 69508358T DE 69508358 T2 DE69508358 T2 DE 69508358T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- silicon single
- reduced
- single crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30047994A JP3285111B2 (ja) | 1994-12-05 | 1994-12-05 | 結晶欠陥の少ないシリコン単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69508358D1 DE69508358D1 (de) | 1999-04-22 |
DE69508358T2 true DE69508358T2 (de) | 1999-08-26 |
Family
ID=17885301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69508358T Expired - Lifetime DE69508358T2 (de) | 1994-12-05 | 1995-11-29 | Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten |
Country Status (5)
Country | Link |
---|---|
US (1) | US5667584A (de) |
EP (1) | EP0716168B1 (de) |
JP (1) | JP3285111B2 (de) |
KR (1) | KR100362021B1 (de) |
DE (1) | DE69508358T2 (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08337490A (ja) * | 1995-06-09 | 1996-12-24 | Shin Etsu Handotai Co Ltd | 結晶欠陥の少ないシリコン単結晶及びその製造方法 |
US5840120A (en) * | 1996-01-22 | 1998-11-24 | Memc Electronic Materials, Inc. | Apparatus for controlling nucleation of oxygen precipitates in silicon crystals |
DE19637182A1 (de) * | 1996-09-12 | 1998-03-19 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte |
US5994761A (en) | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
US6379642B1 (en) * | 1997-04-09 | 2002-04-30 | Memc Electronic Materials, Inc. | Vacancy dominated, defect-free silicon |
JP3544676B2 (ja) | 1997-04-09 | 2004-07-21 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 単結晶シリコンインゴットの製造方法 |
EP0973962B1 (de) * | 1997-04-09 | 2002-07-03 | MEMC Electronic Materials, Inc. | Silicium mit niedriger fehlerdichte und idealem sauerstoffniederschlag |
JP3919308B2 (ja) * | 1997-10-17 | 2007-05-23 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶の製造方法ならびにこの方法で製造されたシリコン単結晶およびシリコンウエーハ |
JP3346249B2 (ja) * | 1997-10-30 | 2002-11-18 | 信越半導体株式会社 | シリコンウエーハの熱処理方法及びシリコンウエーハ |
TW589415B (en) * | 1998-03-09 | 2004-06-01 | Shinetsu Handotai Kk | Method for producing silicon single crystal wafer and silicon single crystal wafer |
JP3621290B2 (ja) * | 1998-06-02 | 2005-02-16 | 信越半導体株式会社 | パーティクルモニター用シリコン単結晶ウエーハの製造方法およびパーティクルモニター用シリコン単結晶ウエーハ |
JPH11349393A (ja) * | 1998-06-03 | 1999-12-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
WO2000000674A2 (en) | 1998-06-26 | 2000-01-06 | Memc Electronic Materials, Inc. | Process for growth of defect free silicon crystals of arbitrarily large diameters |
KR20010053081A (ko) | 1998-06-26 | 2001-06-25 | 헨넬리 헬렌 에프 | 결정 성장 장치용 전기 저항 히터 및 그 사용 방법 |
US6828690B1 (en) | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
WO2000013211A2 (en) | 1998-09-02 | 2000-03-09 | Memc Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
DE69941196D1 (de) | 1998-09-02 | 2009-09-10 | Memc Electronic Materials | Wärmebehandelte Siliziumscheiben mit verbesserter Eigengetterung |
EP1110240B1 (de) | 1998-09-02 | 2006-10-25 | MEMC Electronic Materials, Inc. | Verfahren zur herstellung von einem silizium wafer mit idealem sauerstoffniederschlagverhalten |
US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
KR100622884B1 (ko) | 1998-10-14 | 2006-09-12 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 열적으로 어닐링된 저결함 밀도 단결정 실리콘 |
US6312516B2 (en) | 1998-10-14 | 2001-11-06 | Memc Electronic Materials, Inc. | Process for preparing defect free silicon crystals which allows for variability in process conditions |
WO2000022197A1 (en) | 1998-10-14 | 2000-04-20 | Memc Electronic Materials, Inc. | Epitaxial silicon wafers substantially free of grown-in defects |
JP2000154070A (ja) * | 1998-11-16 | 2000-06-06 | Suminoe Textile Co Ltd | セラミックス三次元構造体及びその製造方法 |
US6284384B1 (en) | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
US6391662B1 (en) | 1999-09-23 | 2002-05-21 | Memc Electronic Materials, Inc. | Process for detecting agglomerated intrinsic point defects by metal decoration |
US6635587B1 (en) | 1999-09-23 | 2003-10-21 | Memc Electronic Materials, Inc. | Method for producing czochralski silicon free of agglomerated self-interstitial defects |
EP1222324B1 (de) * | 1999-09-23 | 2004-05-06 | MEMC Electronic Materials, Inc. | Czochralskiverfahren zur herstellung silizium-einkristalle durch steuerung der abkühlgeschwindigkeit |
KR100327340B1 (ko) * | 1999-09-30 | 2002-03-06 | 윤종용 | 웨이퍼 표면 검사방법 |
US6285011B1 (en) | 1999-10-12 | 2001-09-04 | Memc Electronic Materials, Inc. | Electrical resistance heater for crystal growing apparatus |
JP2001278692A (ja) * | 2000-03-29 | 2001-10-10 | Shin Etsu Handotai Co Ltd | シリコンウエーハおよびシリコン単結晶の製造方法 |
US6835245B2 (en) * | 2000-06-22 | 2004-12-28 | Sumitomo Mitsubishi Silicon Corporation | Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor |
US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
US7105050B2 (en) | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
EP2295619B1 (de) * | 2001-01-26 | 2014-04-23 | MEMC Electronic Materials, Inc. | Verfahren zur Herstellung von Silizium mit niedriger Defektdichte und mit leerstellendominiertem Kern, der im wesentlichen frei von oxidationsinduzierten Stapelfehlern ist |
JP2004537161A (ja) | 2001-04-11 | 2004-12-09 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 高抵抗率czシリコンにおけるサーマルドナー生成の制御 |
US6663709B2 (en) | 2001-06-26 | 2003-12-16 | Memc Electronic Materials, Inc. | Crystal puller and method for growing monocrystalline silicon ingots |
WO2004044276A1 (en) * | 2002-11-12 | 2004-05-27 | Memc Electronic Materials, Inc. | A crystal puller and method for growing a monocrystalline ingot |
JP4432458B2 (ja) * | 2003-10-30 | 2010-03-17 | 信越半導体株式会社 | 単結晶の製造方法 |
JPWO2005073439A1 (ja) * | 2004-02-02 | 2007-09-13 | 信越半導体株式会社 | シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法 |
JP5138678B2 (ja) | 2006-05-19 | 2013-02-06 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Cz成長中のシリコン単結晶側表面から誘起される凝集点欠陥および酸素クラスターの形成制御 |
JP2009035481A (ja) * | 2008-09-24 | 2009-02-19 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハ |
CN108998829B (zh) * | 2017-06-07 | 2020-12-04 | 上海新昇半导体科技有限公司 | 冷却装置、单晶炉和晶棒的冷却方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0639352B2 (ja) * | 1987-09-11 | 1994-05-25 | 信越半導体株式会社 | 単結晶の製造装置 |
JPH02229791A (ja) * | 1989-03-03 | 1990-09-12 | Furukawa Electric Co Ltd:The | 化合物半導体単結晶製造装置 |
JPH0365593A (ja) * | 1989-08-02 | 1991-03-20 | Nippon Mining Co Ltd | 単結晶成長装置 |
JP2686460B2 (ja) * | 1990-03-12 | 1997-12-08 | 住友シチックス株式会社 | 単結晶製造方法 |
JP3016897B2 (ja) * | 1991-03-20 | 2000-03-06 | 信越半導体株式会社 | シリコン単結晶の製造方法及び装置 |
JP2509477B2 (ja) * | 1991-04-20 | 1996-06-19 | コマツ電子金属株式会社 | 結晶成長方法及び結晶成長装置 |
JPH05294783A (ja) * | 1992-04-15 | 1993-11-09 | Kawasaki Steel Corp | シリコン単結晶の製造装置 |
JP3207573B2 (ja) * | 1993-01-05 | 2001-09-10 | ワッカー・エヌエスシーイー株式会社 | 単結晶体の製造方法及びその装置 |
-
1994
- 1994-12-05 JP JP30047994A patent/JP3285111B2/ja not_active Expired - Lifetime
-
1995
- 1995-11-29 EP EP95118734A patent/EP0716168B1/de not_active Expired - Lifetime
- 1995-11-29 DE DE69508358T patent/DE69508358T2/de not_active Expired - Lifetime
- 1995-11-30 US US08/565,100 patent/US5667584A/en not_active Expired - Lifetime
- 1995-12-05 KR KR1019950046896A patent/KR100362021B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69508358D1 (de) | 1999-04-22 |
KR100362021B1 (ko) | 2003-02-07 |
EP0716168A1 (de) | 1996-06-12 |
JPH08157293A (ja) | 1996-06-18 |
EP0716168B1 (de) | 1999-03-17 |
KR960023272A (ko) | 1996-07-18 |
JP3285111B2 (ja) | 2002-05-27 |
US5667584A (en) | 1997-09-16 |
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