DE69508668T2 - Verdampfungssequenz für multiple flüssige Ausgangsstoffe - Google Patents

Verdampfungssequenz für multiple flüssige Ausgangsstoffe

Info

Publication number
DE69508668T2
DE69508668T2 DE69508668T DE69508668T DE69508668T2 DE 69508668 T2 DE69508668 T2 DE 69508668T2 DE 69508668 T DE69508668 T DE 69508668T DE 69508668 T DE69508668 T DE 69508668T DE 69508668 T2 DE69508668 T2 DE 69508668T2
Authority
DE
Germany
Prior art keywords
starting materials
multiple liquid
liquid starting
evaporation sequence
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69508668T
Other languages
English (en)
Other versions
DE69508668D1 (de
Inventor
Visweswaren Sivaramakrishnan
Hiroshi Nishizato
Jun Zhao
Ichiro Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69508668D1 publication Critical patent/DE69508668D1/de
Publication of DE69508668T2 publication Critical patent/DE69508668T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
DE69508668T 1994-07-13 1995-06-30 Verdampfungssequenz für multiple flüssige Ausgangsstoffe Expired - Fee Related DE69508668T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/274,672 US5531183A (en) 1994-07-13 1994-07-13 Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications

Publications (2)

Publication Number Publication Date
DE69508668D1 DE69508668D1 (de) 1999-05-06
DE69508668T2 true DE69508668T2 (de) 1999-12-09

Family

ID=23049162

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508668T Expired - Fee Related DE69508668T2 (de) 1994-07-13 1995-06-30 Verdampfungssequenz für multiple flüssige Ausgangsstoffe

Country Status (5)

Country Link
US (2) US5531183A (de)
EP (1) EP0692553B1 (de)
JP (1) JP3745413B2 (de)
KR (1) KR100254760B1 (de)
DE (1) DE69508668T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012203212A1 (de) * 2012-03-01 2013-09-05 Osram Opto Semiconductors Gmbh Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses

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US6489255B1 (en) * 1995-06-05 2002-12-03 International Business Machines Corporation Low temperature/low dopant oxide glass film
US6462394B1 (en) 1995-12-26 2002-10-08 Micron Technology, Inc. Device configured to avoid threshold voltage shift in a dielectric film
US7067442B1 (en) 1995-12-26 2006-06-27 Micron Technology, Inc. Method to avoid threshold voltage shift in thicker dielectric films
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
US5877072A (en) * 1997-03-31 1999-03-02 Intel Corporation Process for forming doped regions from solid phase diffusion source
US5985770A (en) * 1997-08-21 1999-11-16 Micron Technology, Inc. Method of depositing silicon oxides
US6179277B1 (en) 1998-02-27 2001-01-30 Applied Materials, Inc. Liquid vaporizer systems and methods for their use
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
JP2002511529A (ja) 1998-04-14 2002-04-16 シーブイデイ・システムズ・インコーポレーテツド 薄膜蒸着システム
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
KR100542890B1 (ko) * 1998-12-18 2006-05-09 재단법인 포항산업과학연구원 인도핑 다결정 실리콘성막 제조방법_
US6311959B1 (en) * 1999-04-22 2001-11-06 Applied Materials, Inc. Method and apparatus for generating controlled mixture of organic vapor and inert gas
US6817381B2 (en) * 1999-08-24 2004-11-16 Tokyo Electron Limited Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus
US6589889B2 (en) * 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
US20050147753A1 (en) * 1999-10-22 2005-07-07 Kurt J. Lesker Company Material deposition system and a method for coating a substrate or thermally processing a material in a vacuum
US6830626B1 (en) * 1999-10-22 2004-12-14 Kurt J. Lesker Company Method and apparatus for coating a substrate in a vacuum
US6443435B1 (en) 2000-10-23 2002-09-03 Applied Materials, Inc. Vaporization of precursors at point of use
US20020144784A1 (en) * 2001-04-06 2002-10-10 Curry Don E. Wafer processing apparatus having a chamber with an upper wall having gas supply openings formed therein which promote more even processing of a wafer
US6860138B1 (en) 2002-02-21 2005-03-01 Taiwan Semiconductor Manufacturing Company Real-time detection mechanism with self-calibrated steps for the hardware baseline to detect the malfunction of liquid vaporization system in AMAT TEOS-based Dxz chamber
US6896730B2 (en) * 2002-06-05 2005-05-24 Micron Technology, Inc. Atomic layer deposition apparatus and methods
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
JP2004288916A (ja) * 2003-03-24 2004-10-14 Renesas Technology Corp Ｃｖｄ装置
US20050147749A1 (en) * 2004-01-05 2005-07-07 Msp Corporation High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition
US7741621B2 (en) * 2004-07-14 2010-06-22 City University Of Hong Kong Apparatus and method for focused electric field enhanced plasma-based ion implantation
US7166544B2 (en) * 2004-09-01 2007-01-23 Applied Materials, Inc. Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
JP5179339B2 (ja) * 2008-12-22 2013-04-10 東京エレクトロン株式会社 混合ガスの供給方法及び混合ガスの供給装置
JP5457021B2 (ja) * 2008-12-22 2014-04-02 東京エレクトロン株式会社 混合ガスの供給方法及び混合ガスの供給装置
US8927066B2 (en) * 2011-04-29 2015-01-06 Applied Materials, Inc. Method and apparatus for gas delivery
US9631273B2 (en) * 2012-07-25 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for dielectric deposition process

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FR1461060A (fr) * 1964-12-26 1966-12-10 Fujitsu Ltd Procédé pour la fabrication de films minces
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4529427A (en) * 1977-05-19 1985-07-16 At&T Bell Laboratories Method for making low-loss optical waveguides on an industrial scale
DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride
GB8428032D0 (en) * 1984-11-06 1984-12-12 Secr Defence Growth of crystalline layers
US4845054A (en) * 1985-06-14 1989-07-04 Focus Semiconductor Systems, Inc. Low temperature chemical vapor deposition of silicon dioxide films
US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
JPH0784662B2 (ja) * 1989-12-12 1995-09-13 アプライドマテリアルズジャパン株式会社 化学的気相成長方法とその装置
JP2626925B2 (ja) * 1990-05-23 1997-07-02 三菱電機株式会社 基板処理装置および基板処理方法
US5308433A (en) * 1991-04-11 1994-05-03 Matsushita Electric Industrial Co., Ltd. Apparatus and method for vapor growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012203212A1 (de) * 2012-03-01 2013-09-05 Osram Opto Semiconductors Gmbh Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses

Also Published As

Publication number Publication date
JPH0888191A (ja) 1996-04-02
EP0692553A1 (de) 1996-01-17
DE69508668D1 (de) 1999-05-06
EP0692553B1 (de) 1999-03-31
JP3745413B2 (ja) 2006-02-15
US6464782B1 (en) 2002-10-15
US5531183A (en) 1996-07-02
KR960005854A (ko) 1996-02-23
KR100254760B1 (ko) 2000-05-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee