DE69510421T2 - Vorrichtung aus Quarzglas zum Wärmebehandlung von Halbleiterscheibchen und Herstellungsverfahren dafür - Google Patents

Vorrichtung aus Quarzglas zum Wärmebehandlung von Halbleiterscheibchen und Herstellungsverfahren dafür

Info

Publication number
DE69510421T2
DE69510421T2 DE69510421T DE69510421T DE69510421T2 DE 69510421 T2 DE69510421 T2 DE 69510421T2 DE 69510421 T DE69510421 T DE 69510421T DE 69510421 T DE69510421 T DE 69510421T DE 69510421 T2 DE69510421 T2 DE 69510421T2
Authority
DE
Germany
Prior art keywords
heat treatment
manufacturing process
quartz glass
semiconductor wafers
glass device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69510421T
Other languages
English (en)
Other versions
DE69510421D1 (de
Inventor
Toshiaki Takaku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69510421D1 publication Critical patent/DE69510421D1/de
Publication of DE69510421T2 publication Critical patent/DE69510421T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
DE69510421T 1994-09-30 1995-09-18 Vorrichtung aus Quarzglas zum Wärmebehandlung von Halbleiterscheibchen und Herstellungsverfahren dafür Expired - Lifetime DE69510421T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25982994A JP3473715B2 (ja) 1994-09-30 1994-09-30 石英ガラス製ウェーハボート

Publications (2)

Publication Number Publication Date
DE69510421D1 DE69510421D1 (de) 1999-07-29
DE69510421T2 true DE69510421T2 (de) 2000-03-16

Family

ID=17339576

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510421T Expired - Lifetime DE69510421T2 (de) 1994-09-30 1995-09-18 Vorrichtung aus Quarzglas zum Wärmebehandlung von Halbleiterscheibchen und Herstellungsverfahren dafür

Country Status (4)

Country Link
US (1) US6425168B1 (de)
EP (1) EP0704891B1 (de)
JP (1) JP3473715B2 (de)
DE (1) DE69510421T2 (de)

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JPH10209063A (ja) * 1997-01-27 1998-08-07 Mitsubishi Materials Shilicon Corp 石英ボ−トおよびその製造方法
EP0967183B1 (de) * 1998-06-25 2004-04-07 Heraeus Quarzglas GmbH & Co. KG Verfahren für die Bearbeitung eines Quarzglas-Bauteils
JP3985243B2 (ja) * 1998-12-01 2007-10-03 信越石英株式会社 表面に大きな凹凸を有する石英ガラス治具およびその製造方法
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
JP2002047034A (ja) * 2000-07-31 2002-02-12 Shinetsu Quartz Prod Co Ltd プラズマを利用したプロセス装置用の石英ガラス治具
DE60128302T2 (de) * 2000-08-29 2008-01-24 Heraeus Quarzglas Gmbh & Co. Kg Plasmafeste Quartzglas-Haltevorrichtung
WO2002027771A1 (fr) * 2000-09-28 2002-04-04 Shin-Etsu Quartz Products Co., Ltd. Support de verre de silice destine a la production de semi-conducteurs et procede de production de ce support
US7108746B2 (en) * 2001-05-18 2006-09-19 Integrated Materials, Inc. Silicon fixture with roughened surface supporting wafers in chemical vapor deposition
US20020170487A1 (en) * 2001-05-18 2002-11-21 Raanan Zehavi Pre-coated silicon fixtures used in a high temperature process
DE10239775B3 (de) * 2002-08-29 2004-05-13 Wacker Siltronic Ag Verfahren zur Herstellung eines Siliciumwafers mit einer mit polykristallinem Silicium beschichteten Rückseite und Siliciumwafer hergestellt nach diesem Verfahren
KR100527672B1 (ko) * 2003-07-25 2005-11-28 삼성전자주식회사 서셉터 및 이를 포함하는 증착 장치
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7422635B2 (en) * 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
JP4485826B2 (ja) * 2004-03-25 2010-06-23 東ソー・クォーツ株式会社 異なる直径部分からなる繋ぎ目なしの石英ガラス管の成形方法
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP4348542B2 (ja) * 2004-08-24 2009-10-21 信越半導体株式会社 石英治具及び半導体製造装置
US7713355B2 (en) 2005-05-03 2010-05-11 Integrated Materials, Incorporated Silicon shelf towers
JP2006142288A (ja) * 2005-11-01 2006-06-08 Sumitomo Chemical Co Ltd 固定床多管式反応器
US20100282695A1 (en) * 2008-11-05 2010-11-11 Mark Sandifer High strength camfer on quartzware
DE102008061871B4 (de) * 2008-12-15 2012-10-31 Heraeus Quarzglas Gmbh & Co. Kg Schmelztiegel für den Einsatz in einem Tiegelziehverfahren für Quarzglas
ITPD20120300A1 (it) * 2012-10-16 2014-04-17 Fare S R L Procedimento di pulizia di forni fusori a bacino per la produzione di articoli in vetro
CN104465415A (zh) * 2014-11-28 2015-03-25 上海华力微电子有限公司 一种改善剥落型缺陷的方法
US10215604B2 (en) * 2015-11-20 2019-02-26 Schlumberger Technology Corporation Fluid analysis system with densitometer having electrically isolated vibrating tube
JP7030604B2 (ja) * 2018-04-19 2022-03-07 三菱電機株式会社 ウエハボートおよびその製造方法

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US4582020A (en) * 1984-05-04 1986-04-15 Anicon, Inc. Chemical vapor deposition wafer boat
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JPH0712998B2 (ja) * 1986-11-13 1995-02-15 住友電気工業株式会社 ▲ｉｉ▼−▲ｖｉ▼族化合物単結晶成長用ボ−ト
US4912360A (en) * 1988-08-25 1990-03-27 Meyer Kevin L Lamp with two internal capsules
US5048800A (en) * 1988-12-27 1991-09-17 Kabushiki Kaisha Toshiba Vertical heat treatment apparatus
JPH03159128A (ja) * 1989-11-16 1991-07-09 Shin Etsu Handotai Co Ltd 半導体ウェーハの熱処理方法
JP2821212B2 (ja) * 1989-12-14 1998-11-05 東芝セラミックス株式会社 耐火材料及びその製造方法
JP2989063B2 (ja) * 1991-12-12 1999-12-13 キヤノン株式会社 薄膜形成装置および薄膜形成方法
KR970003646B1 (ko) * 1992-05-15 1997-03-20 신에쯔 세끼에이 가부시끼가이샤 종형열처리장치 및 보온체와 그 제조방법
JP3164248B2 (ja) * 1992-06-11 2001-05-08 東京エレクトロン株式会社 熱処理装置
JP3176481B2 (ja) * 1993-05-28 2001-06-18 株式会社山形信越石英 認識記号付石英ガラス治具および認識記号の付与方法
JPH0758013A (ja) * 1993-08-10 1995-03-03 Hitachi Ltd 半導体成膜装置
US5497727A (en) * 1993-09-07 1996-03-12 Lsi Logic Corporation Cooling element for a semiconductor fabrication chamber
US5560775A (en) * 1994-05-23 1996-10-01 Advanced Micro Devices, Inc. Quartz marking system
JP3137164B2 (ja) * 1994-06-02 2001-02-19 信越半導体株式会社 熱処理炉
JP3547810B2 (ja) * 1994-09-30 2004-07-28 東芝セラミックス株式会社 ウエハー載置用ボートおよびそれを用いた気相成長装置
JP3159128B2 (ja) 1997-06-23 2001-04-23 日本電気株式会社 パーソナルコンピュータ

Also Published As

Publication number Publication date
US6425168B1 (en) 2002-07-30
JP3473715B2 (ja) 2003-12-08
EP0704891B1 (de) 1999-06-23
EP0704891A1 (de) 1996-04-03
JPH08102447A (ja) 1996-04-16
DE69510421D1 (de) 1999-07-29

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