DE69510432D1 - Infrarot-Strahlungssensor - Google Patents

Infrarot-Strahlungssensor

Info

Publication number
DE69510432D1
DE69510432D1 DE69510432T DE69510432T DE69510432D1 DE 69510432 D1 DE69510432 D1 DE 69510432D1 DE 69510432 T DE69510432 T DE 69510432T DE 69510432 T DE69510432 T DE 69510432T DE 69510432 D1 DE69510432 D1 DE 69510432D1
Authority
DE
Germany
Prior art keywords
infrared radiation
radiation sensor
sensor
infrared
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69510432T
Other languages
English (en)
Other versions
DE69510432T2 (de
Inventor
Mitsuteru Kimura
Takeshi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Terumo Corp
Original Assignee
Terumo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Terumo Corp filed Critical Terumo Corp
Application granted granted Critical
Publication of DE69510432D1 publication Critical patent/DE69510432D1/de
Publication of DE69510432T2 publication Critical patent/DE69510432T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE69510432T 1994-11-30 1995-11-27 Infrarot-Strahlungssensor Expired - Lifetime DE69510432T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6296565A JPH08152356A (ja) 1994-11-30 1994-11-30 赤外線センサ

Publications (2)

Publication Number Publication Date
DE69510432D1 true DE69510432D1 (de) 1999-07-29
DE69510432T2 DE69510432T2 (de) 1999-11-11

Family

ID=17835197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510432T Expired - Lifetime DE69510432T2 (de) 1994-11-30 1995-11-27 Infrarot-Strahlungssensor

Country Status (4)

Country Link
US (1) US5589688A (de)
EP (1) EP0715359B1 (de)
JP (1) JPH08152356A (de)
DE (1) DE69510432T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962854A (en) * 1996-06-12 1999-10-05 Ishizuka Electronics Corporation Infrared sensor and infrared detector
US6002132A (en) * 1997-10-27 1999-12-14 The United States Of America As Represented By The Secretary Of The Air Force Thermionic thermal detector and detector array
DE19752208A1 (de) * 1997-11-25 1999-06-02 Bosch Gmbh Robert Thermischer Membransensor und Verfahren zu seiner Herstellung
EP1041371B1 (de) * 1997-12-18 2005-03-23 Mitsubishi Denki Kabushiki Kaisha Halbleiteranordnung zur aufnahme von infrarotbildern
US6133572A (en) * 1998-06-05 2000-10-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Infrared detector system with controlled thermal conductance
JP2001264441A (ja) * 2000-01-14 2001-09-26 Seiko Instruments Inc カロリーメーターとその製造方法
US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
FR2809534B1 (fr) * 2000-05-26 2005-01-14 Commissariat Energie Atomique Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
TW512524B (en) * 2001-01-19 2002-12-01 Nat Science Council Fabrication of amorphous silicon/amorphous silicon gemine NI1PI2N infrared position defectors
US6595014B2 (en) * 2001-02-22 2003-07-22 Hewlett-Packard Development Company, L.P. Spray cooling system with cooling regime detection
CN1325658C (zh) * 2001-04-23 2007-07-11 三星电子株式会社 包含mosfet分子检测芯片和采用该芯片的分子检测装置以及使用该装置的分子检测方法
US6777681B1 (en) * 2001-04-25 2004-08-17 Raytheon Company Infrared detector with amorphous silicon detector elements, and a method of making it
JP2004062938A (ja) * 2002-07-25 2004-02-26 Pioneer Electronic Corp 球面収差補正装置及び球面収差補正方法
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US7655909B2 (en) * 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
US7905855B2 (en) * 2007-07-05 2011-03-15 Baxter International Inc. Dialysis system having non-invasive temperature sensing
JP5402238B2 (ja) * 2009-05-22 2014-01-29 株式会社デンソー 赤外線検出装置
DE102010050747A1 (de) 2010-11-08 2012-05-10 Vishay Electronic Gmbh Schaltungsanordnung zum Betreiben einer Leuchtdiode
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
CN105960194B (zh) * 2013-10-03 2020-03-03 皇家飞利浦有限公司 热监测和控制
US9709445B2 (en) * 2013-10-25 2017-07-18 Stmicroelectronics S.R.L. Temperature sensor and related method
US11528442B2 (en) 2019-12-23 2022-12-13 Sivananthan Laboratories, Inc. Adjacent electrode which provides pixel delineation for monolithic integration of a colloidal quantum dot photodetector film with a readout integrated circuit
US11674077B2 (en) 2020-01-03 2023-06-13 Sivananthan Laboratories, Inc. Process for the post-deposition treament of colloidal quantum dot photodetector films to improve performance by using hydrogen peroxide
DE102022122536A1 (de) 2022-09-06 2024-03-07 Lpkf Laser & Electronics Aktiengesellschaft Mikro-Heizelement mit zumindest einer beheizbaren Basis sowie ein Mikro-Heizelement und ein Verfahren zur Herstellung des Mikro-Heizelements

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131525A (ja) * 1982-01-31 1983-08-05 Matsushita Electric Works Ltd 赤外線検出装置
NL8700370A (nl) * 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
JPH0663853B2 (ja) * 1987-04-30 1994-08-22 新日本無線株式会社 非接触型半導体温度センサ
JP2658563B2 (ja) * 1990-11-21 1997-09-30 富士電機株式会社 マイクロ波プラズマドライクリーニングの方法
JPH0540064A (ja) * 1991-08-06 1993-02-19 Mitsuteru Kimura シヨツトキー接合温度センサ
JPH06160174A (ja) * 1991-09-27 1994-06-07 Terumo Corp 赤外線センサ
JPH05142039A (ja) * 1991-11-22 1993-06-08 Hamamatsu Photonics Kk 赤外線センサ
EP0566156B1 (de) * 1992-04-17 1997-08-27 Terumo Kabushiki Kaisha Infrarotsensor und Verfahren für dessen Herstellung
JP3184659B2 (ja) * 1993-04-01 2001-07-09 テルモ株式会社 体温計
JPH07209089A (ja) * 1994-01-24 1995-08-11 Terumo Corp 赤外線センサ

Also Published As

Publication number Publication date
US5589688A (en) 1996-12-31
EP0715359B1 (de) 1999-06-23
DE69510432T2 (de) 1999-11-11
JPH08152356A (ja) 1996-06-11
EP0715359A1 (de) 1996-06-05

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