DE69513711T2 - Halbleitervorrichtung aus II-VI-Verbindung und Herstellungsverfahren - Google Patents

Halbleitervorrichtung aus II-VI-Verbindung und Herstellungsverfahren

Info

Publication number
DE69513711T2
DE69513711T2 DE69513711T DE69513711T DE69513711T2 DE 69513711 T2 DE69513711 T2 DE 69513711T2 DE 69513711 T DE69513711 T DE 69513711T DE 69513711 T DE69513711 T DE 69513711T DE 69513711 T2 DE69513711 T2 DE 69513711T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
compound semiconductor
compound
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69513711T
Other languages
English (en)
Other versions
DE69513711D1 (de
Inventor
Masanori Murakami
Yasuo Koide
Nobuaki Teraguchi
Yoshitaka Tomomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69513711D1 publication Critical patent/DE69513711D1/de
Publication of DE69513711T2 publication Critical patent/DE69513711T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
DE69513711T 1994-03-24 1995-03-24 Halbleitervorrichtung aus II-VI-Verbindung und Herstellungsverfahren Expired - Fee Related DE69513711T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6053589A JPH07263372A (ja) 1994-03-24 1994-03-24 Ｉｉ−ｖｉ族化合物半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69513711D1 DE69513711D1 (de) 2000-01-13
DE69513711T2 true DE69513711T2 (de) 2000-04-27

Family

ID=12947060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513711T Expired - Fee Related DE69513711T2 (de) 1994-03-24 1995-03-24 Halbleitervorrichtung aus II-VI-Verbindung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5767536A (de)
EP (1) EP0674347B1 (de)
JP (1) JPH07263372A (de)
DE (1) DE69513711T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10294531A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 窒化物化合物半導体発光素子
US6087725A (en) * 1997-09-29 2000-07-11 Matsushita Electric Industrial Co., Ltd. Low barrier ohmic contact for semiconductor light emitting device
US6744075B2 (en) * 2001-09-17 2004-06-01 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of forming the same
DE102019205376A1 (de) * 2019-04-15 2020-10-15 Forschungszentrum Jülich Herstellen eines ohmschen Kontakts sowie elektronisches Bauelement mit ohmschem Kontakt

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100247682B1 (ko) * 1991-05-15 2000-03-15 스프레이그 로버트 월터 블루-그린 레이저다이오드
EP0552023B1 (de) * 1992-01-14 1997-04-02 Mitsubishi Chemical Corporation Elektroden-Struktur für Halbleiteranordnung
US5293074A (en) * 1992-05-05 1994-03-08 North American Philips Corporation Ohmic contact to p-type ZnSe
JP3278951B2 (ja) * 1992-10-23 2002-04-30 ソニー株式会社 オーミック電極の形成方法
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor

Also Published As

Publication number Publication date
EP0674347A1 (de) 1995-09-27
EP0674347B1 (de) 1999-12-08
US5767536A (en) 1998-06-16
JPH07263372A (ja) 1995-10-13
DE69513711D1 (de) 2000-01-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee