DE69513925D1 - Resistmaterial und Herstellung von Mustern - Google Patents

Resistmaterial und Herstellung von Mustern

Info

Publication number
DE69513925D1
DE69513925D1 DE69513925T DE69513925T DE69513925D1 DE 69513925 D1 DE69513925 D1 DE 69513925D1 DE 69513925 T DE69513925 T DE 69513925T DE 69513925 T DE69513925 T DE 69513925T DE 69513925 D1 DE69513925 D1 DE 69513925D1
Authority
DE
Germany
Prior art keywords
patterns
production
resist material
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69513925T
Other languages
English (en)
Other versions
DE69513925T2 (de
Inventor
Urano Fumiyoshi
Negishi Takaaki
Akiko Katsuyama
Masayuki Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Fujifilm Wako Pure Chemical Corp
Original Assignee
Wako Pure Chemical Industries Ltd
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chemical Industries Ltd, Matsushita Electric Industrial Co Ltd filed Critical Wako Pure Chemical Industries Ltd
Application granted granted Critical
Publication of DE69513925D1 publication Critical patent/DE69513925D1/de
Publication of DE69513925T2 publication Critical patent/DE69513925T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/11—Vinyl alcohol polymer or derivative
DE69513925T 1994-09-02 1995-03-23 Resistmaterial und Herstellung von Mustern Expired - Lifetime DE69513925T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23424694 1994-09-02

Publications (2)

Publication Number Publication Date
DE69513925D1 true DE69513925D1 (de) 2000-01-20
DE69513925T2 DE69513925T2 (de) 2000-06-08

Family

ID=16967972

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513925T Expired - Lifetime DE69513925T2 (de) 1994-09-02 1995-03-23 Resistmaterial und Herstellung von Mustern

Country Status (4)

Country Link
US (2) US5558971A (de)
EP (1) EP0704762B1 (de)
KR (1) KR100249255B1 (de)
DE (1) DE69513925T2 (de)

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US7482107B2 (en) * 1997-08-28 2009-01-27 Shipley Company, L.L.C. Photoresist composition
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US6303263B1 (en) * 1998-02-25 2001-10-16 International Business Machines Machines Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups
JP3955385B2 (ja) 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 パターン形成方法
JP3955384B2 (ja) 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
JP3743187B2 (ja) * 1998-05-08 2006-02-08 住友化学株式会社 フォトレジスト組成物
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JP3812622B2 (ja) * 1999-09-17 2006-08-23 信越化学工業株式会社 レジスト材料及びパターン形成方法
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US6395446B1 (en) 1999-10-06 2002-05-28 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
US6210859B1 (en) * 1999-10-15 2001-04-03 Korea Kumho Petrochemical Co., Ltd. Copolymer for the manufacture of chemical amplified photoresist and a positive photoresist composition using the same
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JP4288446B2 (ja) 2000-10-23 2009-07-01 信越化学工業株式会社 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法
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TWI225968B (en) * 2001-09-28 2005-01-01 Shinetsu Chemical Co Novel sulfonyliazomethanes, photoacid generators, resist compositions, and patterning process
JP3886358B2 (ja) * 2001-10-31 2007-02-28 松下電器産業株式会社 パターン形成方法
US7022455B2 (en) * 2001-12-28 2006-04-04 Shipley Company, L.L.C. Photoacid-labile polymers and photoresists comprising same
JP4080784B2 (ja) * 2002-04-26 2008-04-23 東京応化工業株式会社 レジスト用現像液及びそれを用いたレジストパターン形成方法、並びにレジスト用現像原液
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JP4088784B2 (ja) * 2003-06-19 2008-05-21 信越化学工業株式会社 高分子化合物の製造方法及びレジスト材料
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US8053158B2 (en) 2006-01-19 2011-11-08 Samsung Electronics Co., Ltd. Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns
KR101813298B1 (ko) 2010-02-24 2017-12-28 바스프 에스이 잠재성 산 및 그의 용도
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
US20110300367A1 (en) 2010-06-07 2011-12-08 Ching-Kee Chien Optical Fiber With Photoacid Coating
KR20130032071A (ko) * 2011-09-22 2013-04-01 주식회사 동진쎄미켐 Ｉ-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법
US9322986B2 (en) 2013-06-24 2016-04-26 Corning Incorporated Optical fiber coating for short data network
US9994538B2 (en) 2015-02-02 2018-06-12 Basf Se Latent acids and their use
JP6512049B2 (ja) * 2015-09-15 2019-05-15 信越化学工業株式会社 レジスト材料及びパターン形成方法

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Also Published As

Publication number Publication date
US5558971A (en) 1996-09-24
DE69513925T2 (de) 2000-06-08
KR960011558A (ko) 1996-04-20
KR100249255B1 (ko) 2000-06-01
EP0704762B1 (de) 1999-12-15
US5558976A (en) 1996-09-24
EP0704762A1 (de) 1996-04-03

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