DE69517409T2 - Integriertes schaltungssystem zur gewinnung und speicherung von analogen signalen, mit zeitgleichen lese- und schreibspannungsprogrammverfahren - Google Patents
Integriertes schaltungssystem zur gewinnung und speicherung von analogen signalen, mit zeitgleichen lese- und schreibspannungsprogrammverfahrenInfo
- Publication number
- DE69517409T2 DE69517409T2 DE69517409T DE69517409T DE69517409T2 DE 69517409 T2 DE69517409 T2 DE 69517409T2 DE 69517409 T DE69517409 T DE 69517409T DE 69517409 T DE69517409 T DE 69517409T DE 69517409 T2 DE69517409 T2 DE 69517409T2
- Authority
- DE
- Germany
- Prior art keywords
- recovery
- storage
- integrated circuit
- analog signals
- circuit system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5624—Concurrent multilevel programming and programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/306,266 US5629890A (en) | 1994-09-14 | 1994-09-14 | Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method |
PCT/US1995/011590 WO1996008823A1 (en) | 1994-09-14 | 1995-09-13 | Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69517409D1 DE69517409D1 (de) | 2000-07-13 |
DE69517409T2 true DE69517409T2 (de) | 2001-01-25 |
Family
ID=23184536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69517409T Expired - Lifetime DE69517409T2 (de) | 1994-09-14 | 1995-09-13 | Integriertes schaltungssystem zur gewinnung und speicherung von analogen signalen, mit zeitgleichen lese- und schreibspannungsprogrammverfahren |
Country Status (8)
Country | Link |
---|---|
US (4) | US5629890A (de) |
EP (1) | EP0728361B1 (de) |
JP (1) | JP3587529B2 (de) |
KR (1) | KR100260603B1 (de) |
AU (1) | AU3552695A (de) |
CA (1) | CA2176010A1 (de) |
DE (1) | DE69517409T2 (de) |
WO (1) | WO1996008823A1 (de) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US5712180A (en) * | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
GB2304947B (en) * | 1995-08-31 | 2000-02-23 | Motorola Ltd | Electrically programmable memory, method of programming and method of reading |
US5687114A (en) | 1995-10-06 | 1997-11-11 | Agate Semiconductor, Inc. | Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell |
GB9600384D0 (en) * | 1996-01-09 | 1996-03-13 | Nyfotek As | Dna glycosylases |
US5726934A (en) * | 1996-04-09 | 1998-03-10 | Information Storage Devices, Inc. | Method and apparatus for analog reading values stored in floating gate structures |
KR100193898B1 (ko) * | 1996-06-29 | 1999-06-15 | 김영환 | 플래쉬 메모리 장치 |
US5771346A (en) * | 1996-10-24 | 1998-06-23 | Micron Quantum Devices, Inc. | Apparatus and method for detecting over-programming condition in multistate memory device |
US5870335A (en) * | 1997-03-06 | 1999-02-09 | Agate Semiconductor, Inc. | Precision programming of nonvolatile memory cells |
US6487116B2 (en) | 1997-03-06 | 2002-11-26 | Silicon Storage Technology, Inc. | Precision programming of nonvolatile memory cells |
US5828592A (en) * | 1997-03-12 | 1998-10-27 | Information Storage Devices, Inc. | Analog signal recording and playback integrated circuit and message management system |
DE69723814D1 (de) * | 1997-05-09 | 2003-09-04 | St Microelectronics Srl | Verfahren und Vorrichtung zum Analogprogrammieren von nichtflüchtigen Speicherzellen, insbesondere für Flash-Speicherzellen |
US5926409A (en) * | 1997-09-05 | 1999-07-20 | Information Storage Devices, Inc. | Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application |
US5877984A (en) * | 1997-09-05 | 1999-03-02 | Information Storage Devices, Inc. | Method and apparatus for adjustment and control of an iterative method of recording analog signals with on chip selection of a voltage ramp amplitude |
US6100752A (en) * | 1997-09-12 | 2000-08-08 | Information Storage Devices, Inc. | Method and apparatus for reducing power supply current surges in a charge pump using a delayed clock line |
DE69723700D1 (de) * | 1997-11-03 | 2003-08-28 | St Microelectronics Srl | Verfahren zur Programmierung eines nichtflüchtigen Mehrpegelspeichers und nichtflüchtiger Mehrpegelspeicher |
US5903487A (en) * | 1997-11-25 | 1999-05-11 | Windbond Electronics Corporation | Memory device and method of operation |
US5959883A (en) * | 1998-01-09 | 1999-09-28 | Information Storage Devices, Inc. | Recording and playback integrated system for analog non-volatile flash memory |
ITTO980068A1 (it) * | 1998-01-27 | 1999-07-27 | Sgs Thomson Microelectronics | Circuito di lettura per memorie non volatili analogiche, in particola- re flash-eeprom, a lettura diretta della tensione di soglia e a corren |
US6208542B1 (en) * | 1998-06-30 | 2001-03-27 | Sandisk Corporation | Techniques for storing digital data in an analog or multilevel memory |
US6167101A (en) * | 1998-07-28 | 2000-12-26 | Industrial Technology Research Institute | Apparatus and method for correcting a phase of a synchronizing signal |
US6055186A (en) * | 1998-10-23 | 2000-04-25 | Macronix International Co., Ltd. | Regulated negative voltage supply circuit for floating gate memory devices |
EP1005213A3 (de) * | 1998-11-02 | 2000-07-05 | Information Storage Devices, Inc. | System zur Aufnahme und Wiedergabe von mehreren Mitteilungen , mit konfigurierbaren Funktionen zur Analogsignalverarbeitung eines analogen Mehrpegel-Signals |
IT1305182B1 (it) * | 1998-11-13 | 2001-04-10 | St Microelectronics Srl | Circuito di lettura analogico ad alta precisione per celle di memorianon volatile, in particolare analogiche o multilivello flash o eeprom. |
US6282145B1 (en) | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
FR2794867B1 (fr) * | 1999-06-08 | 2001-08-10 | St Microelectronics Sa | Circuit de detection et de memorisation d'une surtension |
US6347136B1 (en) * | 1999-07-15 | 2002-02-12 | Winbond Electronics Corporation | Calling party announcement message management systems and methods |
AU8000200A (en) * | 1999-10-08 | 2001-04-23 | Aplus Flash Technology, Inc. | Multiple level flash memory |
JP3980827B2 (ja) * | 2000-03-10 | 2007-09-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置および製造方法 |
US6400605B1 (en) * | 2000-05-30 | 2002-06-04 | Summit Microelectronics, Inc. | Method and system for pulse shaping in test and program modes |
US6396742B1 (en) | 2000-07-28 | 2002-05-28 | Silicon Storage Technology, Inc. | Testing of multilevel semiconductor memory |
US6301151B1 (en) | 2000-08-09 | 2001-10-09 | Information Storage Devices, Inc. | Adaptive programming method and apparatus for flash memory analog storage |
JP4250325B2 (ja) * | 2000-11-01 | 2009-04-08 | 株式会社東芝 | 半導体記憶装置 |
US6525955B1 (en) * | 2001-12-18 | 2003-02-25 | Broadcom Corporation | Memory cell with fuse element |
US6687155B2 (en) | 2001-01-11 | 2004-02-03 | Oki Electric Industry Co., Ltd. | Analog storage semiconductor memory that uses plural write voltages and plural read voltages having different voltage levels |
US6738289B2 (en) * | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
US6504750B1 (en) * | 2001-08-27 | 2003-01-07 | Micron Technology, Inc. | Resistive memory element sensing using averaging |
US6529421B1 (en) * | 2001-08-28 | 2003-03-04 | Micron Technology, Inc. | SRAM array with temperature-compensated threshold voltage |
US6584030B2 (en) | 2001-08-28 | 2003-06-24 | Micron Technology, Inc. | Memory circuit regulation system and method |
US6693819B2 (en) * | 2002-01-08 | 2004-02-17 | Broadcom Corporation | High voltage switch circuitry |
US6826102B2 (en) * | 2002-05-16 | 2004-11-30 | Micron Technology, Inc. | Noise resistant small signal sensing circuit for a memory device |
US6753727B2 (en) * | 2002-06-13 | 2004-06-22 | Skyworks Solutions, Inc. | Sequential DC offset correction for amplifier chain |
US6813208B2 (en) * | 2002-07-09 | 2004-11-02 | Micron Technology, Inc. | System and method for sensing data stored in a resistive memory element using one bit of a digital count |
US6788578B1 (en) * | 2003-01-27 | 2004-09-07 | Turbo Ic, Inc. | Charge pump for conductive lines in programmable memory array |
DE60317768T2 (de) * | 2003-04-10 | 2008-11-27 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zum Auslesen einer nichtflüchtigen Speichervorrichtung und zugehörige Vorrichtung |
EP3709539A1 (de) * | 2005-09-26 | 2020-09-16 | Nielsen Media Research, Inc. | Verfahren und vorrichtung zur dosierung einer computerbasierten medienpräsentation |
US8279312B2 (en) * | 2005-11-24 | 2012-10-02 | Stmicroelectronics S.A. | Image sensor element with multiple outputs |
US7512008B2 (en) * | 2005-11-30 | 2009-03-31 | Atmel Corporation | Circuit to control voltage ramp rate |
JP2007242068A (ja) * | 2006-03-03 | 2007-09-20 | Sony Corp | 不揮発性メモリシステムおよび不揮発性メモリ制御方法 |
US7911834B2 (en) * | 2006-05-15 | 2011-03-22 | Apple Inc. | Analog interface for a flash memory die |
US7551486B2 (en) * | 2006-05-15 | 2009-06-23 | Apple Inc. | Iterative memory cell charging based on reference cell value |
US7613043B2 (en) * | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
US7852690B2 (en) * | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7511646B2 (en) * | 2006-05-15 | 2009-03-31 | Apple Inc. | Use of 8-bit or higher A/D for NAND cell value |
US7639531B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Dynamic cell bit resolution |
US7568135B2 (en) | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
US7639542B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
US7701797B2 (en) * | 2006-05-15 | 2010-04-20 | Apple Inc. | Two levels of voltage regulation supplied for logic and data programming voltage of a memory device |
US7978541B2 (en) * | 2007-01-02 | 2011-07-12 | Marvell World Trade Ltd. | High speed interface for multi-level memory |
KR100827700B1 (ko) * | 2007-01-17 | 2008-05-07 | 삼성전자주식회사 | 불휘발성 메모리 장치에서의 내부 고전압 측정 방법 및전압 출력회로 |
US7719901B2 (en) | 2007-06-05 | 2010-05-18 | Micron Technology, Inc. | Solid state memory utilizing analog communication of data values |
US7995412B2 (en) | 2007-09-07 | 2011-08-09 | Micron Technology, Inc. | Analog-to-digital and digital-to-analog conversion window adjustment based on reference cells in a memory device |
US7782674B2 (en) * | 2007-10-18 | 2010-08-24 | Micron Technology, Inc. | Sensing of memory cells in NAND flash |
EP2210257B1 (de) * | 2007-10-31 | 2016-04-20 | Avago Technologies General IP (Singapore) Pte. Ltd. | Systematische fehlerkorrektur für mehrpegel-flash-speicher |
US7768832B2 (en) * | 2008-04-07 | 2010-08-03 | Micron Technology, Inc. | Analog read and write paths in a solid state memory device |
TW200943298A (en) * | 2008-04-11 | 2009-10-16 | Nat Univ Tsing Hua | Nonvolatile analog memory |
US7969235B2 (en) * | 2008-06-09 | 2011-06-28 | Sandisk Corporation | Self-adaptive multi-stage charge pump |
US7815287B2 (en) * | 2008-09-24 | 2010-10-19 | Hewlett-Packard Development Company, L.P. | Fluid ejection device and method |
US8460947B2 (en) * | 2008-09-24 | 2013-06-11 | Hewlett-Packard Development Company, L.P. | Fluid ejection device and method |
US8004884B2 (en) * | 2009-07-31 | 2011-08-23 | International Business Machines Corporation | Iterative write pausing techniques to improve read latency of memory systems |
US20110133820A1 (en) * | 2009-12-09 | 2011-06-09 | Feng Pan | Multi-Stage Charge Pump with Variable Number of Boosting Stages |
US20110148509A1 (en) * | 2009-12-17 | 2011-06-23 | Feng Pan | Techniques to Reduce Charge Pump Overshoot |
US8737138B2 (en) | 2010-11-18 | 2014-05-27 | Micron Technology, Inc. | Memory instruction including parameter to affect operating condition of memory |
US9218883B2 (en) | 2013-03-15 | 2015-12-22 | West Virginia University | Continuous-time floating gate memory cell programming |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4910706A (en) * | 1972-09-11 | 1990-03-20 | Hyatt Gilbert P | Analog memory for storing digital information |
US4054864A (en) * | 1973-05-04 | 1977-10-18 | Commissariat A L'energie Atomique | Method and device for the storage of analog signals |
US4094007A (en) * | 1975-12-04 | 1978-06-06 | Matsushita Electric Industrial Co., Ltd. | Temperature-compensated analog voltage memory device |
JPS57176598A (en) * | 1981-04-20 | 1982-10-29 | Sanyo Electric Co Ltd | Write-in circuit for non-volatile analog memory |
US4890259A (en) * | 1988-07-13 | 1989-12-26 | Information Storage Devices | High density integrated circuit analog signal recording and playback system |
US4989179A (en) * | 1988-07-13 | 1991-01-29 | Information Storage Devices, Inc. | High density integrated circuit analog signal recording and playback system |
US5239500A (en) * | 1989-09-29 | 1993-08-24 | Centre Suisse D'electronique Et De Microtechnique S.A. | Process of storing analog quantities and device for the implementation thereof |
US5175706A (en) * | 1989-12-07 | 1992-12-29 | Sgs-Thomson Microelectronics S.A. | Programming voltage generator circuit for programmable memory |
US5218571A (en) * | 1990-05-07 | 1993-06-08 | Cypress Semiconductor Corporation | EPROM source bias circuit with compensation for processing characteristics |
JPH0453096A (ja) * | 1990-06-19 | 1992-02-20 | Toshiba Corp | アナログ記憶装置 |
US5164915A (en) * | 1990-09-26 | 1992-11-17 | Information Storage Devices, Inc. | Cascading analog record/playback devices |
US5241494A (en) * | 1990-09-26 | 1993-08-31 | Information Storage Devices | Integrated circuit system for analog signal recording and playback |
US5126967A (en) * | 1990-09-26 | 1992-06-30 | Information Storage Devices, Inc. | Writable distributed non-volatile analog reference system and method for analog signal recording and playback |
US5220531A (en) * | 1991-01-02 | 1993-06-15 | Information Storage Devices, Inc. | Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback |
US5243239A (en) * | 1991-01-22 | 1993-09-07 | Information Storage Devices, Inc. | Integrated MOSFET resistance and oscillator frequency control and trim methods and apparatus |
US5388064A (en) * | 1991-11-26 | 1995-02-07 | Information Storage Devices, Inc. | Programmable non-volatile analog voltage source devices and methods |
US5294819A (en) * | 1992-11-25 | 1994-03-15 | Information Storage Devices | Single-transistor cell EEPROM array for analog or digital storage |
US5444656A (en) * | 1994-06-02 | 1995-08-22 | Intel Corporation | Apparatus for fast internal reference cell trimming |
US5487033A (en) * | 1994-06-28 | 1996-01-23 | Intel Corporation | Structure and method for low current programming of flash EEPROMS |
US5508958A (en) * | 1994-09-29 | 1996-04-16 | Intel Corporation | Method and apparatus for sensing the state of floating gate memory cells by applying a variable gate voltage |
US5526301A (en) * | 1995-01-13 | 1996-06-11 | Tektronix, Inc. | High-speed analog acquisition including signal processing |
US5606522A (en) * | 1995-12-20 | 1997-02-25 | Samsung Electronics Co., Ltd. | Non-volatile analog memory |
-
1994
- 1994-09-14 US US08/306,266 patent/US5629890A/en not_active Expired - Lifetime
-
1995
- 1995-09-13 AU AU35526/95A patent/AU3552695A/en not_active Abandoned
- 1995-09-13 DE DE69517409T patent/DE69517409T2/de not_active Expired - Lifetime
- 1995-09-13 EP EP95932498A patent/EP0728361B1/de not_active Expired - Lifetime
- 1995-09-13 CA CA002176010A patent/CA2176010A1/en not_active Abandoned
- 1995-09-13 JP JP51030796A patent/JP3587529B2/ja not_active Expired - Fee Related
- 1995-09-13 KR KR1019960702515A patent/KR100260603B1/ko not_active IP Right Cessation
- 1995-09-13 WO PCT/US1995/011590 patent/WO1996008823A1/en active IP Right Grant
-
1996
- 1996-11-26 US US08/756,564 patent/US5745414A/en not_active Expired - Lifetime
- 1996-11-26 US US08/756,567 patent/US5754470A/en not_active Expired - Lifetime
-
1998
- 1998-04-27 US US09/067,642 patent/US5963462A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2176010A1 (en) | 1996-03-21 |
KR100260603B1 (ko) | 2000-07-01 |
JPH09509518A (ja) | 1997-09-22 |
US5745414A (en) | 1998-04-28 |
KR960706172A (ko) | 1996-11-08 |
AU3552695A (en) | 1996-03-29 |
DE69517409D1 (de) | 2000-07-13 |
US5629890A (en) | 1997-05-13 |
WO1996008823A1 (en) | 1996-03-21 |
US5963462A (en) | 1999-10-05 |
JP3587529B2 (ja) | 2004-11-10 |
EP0728361A1 (de) | 1996-08-28 |
US5754470A (en) | 1998-05-19 |
EP0728361B1 (de) | 2000-06-07 |
EP0728361A4 (de) | 1998-04-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: WINBOND ELECTRONICS CORP., HSINCHU, TW |