DE69518520T2 - Lineare kondensatoren für hochtemperaturanwendungen - Google Patents

Lineare kondensatoren für hochtemperaturanwendungen

Info

Publication number
DE69518520T2
DE69518520T2 DE69518520T DE69518520T DE69518520T2 DE 69518520 T2 DE69518520 T2 DE 69518520T2 DE 69518520 T DE69518520 T DE 69518520T DE 69518520 T DE69518520 T DE 69518520T DE 69518520 T2 DE69518520 T2 DE 69518520T2
Authority
DE
Germany
Prior art keywords
high temperature
temperature applications
linear capacitors
capacitors
linear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69518520T
Other languages
English (en)
Other versions
DE69518520D1 (de
Inventor
R Gardner
S Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE69518520D1 publication Critical patent/DE69518520D1/de
Publication of DE69518520T2 publication Critical patent/DE69518520T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
DE69518520T 1994-06-30 1995-06-26 Lineare kondensatoren für hochtemperaturanwendungen Expired - Fee Related DE69518520T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/269,265 US5429981A (en) 1994-06-30 1994-06-30 Method of making linear capacitors for high temperature applications
PCT/US1995/008021 WO1996000982A1 (en) 1994-06-30 1995-06-26 Linear capacitors for high temperature applications

Publications (2)

Publication Number Publication Date
DE69518520D1 DE69518520D1 (de) 2000-09-28
DE69518520T2 true DE69518520T2 (de) 2001-04-19

Family

ID=23026526

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69518520T Expired - Fee Related DE69518520T2 (de) 1994-06-30 1995-06-26 Lineare kondensatoren für hochtemperaturanwendungen

Country Status (4)

Country Link
US (1) US5429981A (de)
EP (1) EP0767972B1 (de)
DE (1) DE69518520T2 (de)
WO (1) WO1996000982A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG45497A1 (en) * 1995-09-05 1998-01-16 Chartered Semiconductors Manuf Low profile shallon trench double polysilicon capacitor
US5770875A (en) * 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
US6093624A (en) * 1997-12-23 2000-07-25 Philips Electronics North America Corporation Method of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuits
US6090656A (en) * 1998-05-08 2000-07-18 Lsi Logic Linear capacitor and process for making same
US6538282B1 (en) * 2000-03-14 2003-03-25 Oki Electric Industry Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US7672558B2 (en) * 2004-01-12 2010-03-02 Honeywell International, Inc. Silicon optical device
US20070101927A1 (en) * 2005-11-10 2007-05-10 Honeywell International Inc. Silicon based optical waveguide structures and methods of manufacture
US7362443B2 (en) 2005-11-17 2008-04-22 Honeywell International Inc. Optical gyro with free space resonator and method for sensing inertial rotation rate
US7463360B2 (en) * 2006-04-18 2008-12-09 Honeywell International Inc. Optical resonator gyro with integrated external cavity beam generator
US20070274655A1 (en) * 2006-04-26 2007-11-29 Honeywell International Inc. Low-loss optical device structure
US7454102B2 (en) 2006-04-26 2008-11-18 Honeywell International Inc. Optical coupling structure
US7535576B2 (en) * 2006-05-15 2009-05-19 Honeywell International, Inc. Integrated optical rotation sensor and method for sensing rotation rate
JP5546298B2 (ja) * 2010-03-15 2014-07-09 セイコーインスツル株式会社 半導体回路装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805071A (en) * 1987-11-30 1989-02-14 Texas Instruments Incorporated High voltage capacitor for integrated circuits
JP2552931B2 (ja) * 1990-02-23 1996-11-13 三菱電機株式会社 移動体通信方式
US5246870A (en) * 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
KR930006732B1 (ko) * 1991-05-08 1993-07-23 재단법인 한국전자통신연구소 전기적 특성을 갖는 구조물이 매립된 반도체기판 및 그 제조방법
US5266512A (en) * 1991-10-23 1993-11-30 Motorola, Inc. Method for forming a nested surface capacitor
US5270265A (en) * 1992-09-01 1993-12-14 Harris Corporation Stress relief technique of removing oxide from surface of trench-patterned semiconductor-on-insulator structure
US5273915A (en) * 1992-10-05 1993-12-28 Motorola, Inc. Method for fabricating bipolar junction and MOS transistors on SOI

Also Published As

Publication number Publication date
US5429981A (en) 1995-07-04
EP0767972A1 (de) 1997-04-16
WO1996000982A1 (en) 1996-01-11
DE69518520D1 (de) 2000-09-28
EP0767972B1 (de) 2000-08-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee