DE69521163T2 - Optischer Halbleitermodulator - Google Patents
Optischer HalbleitermodulatorInfo
- Publication number
- DE69521163T2 DE69521163T2 DE69521163T DE69521163T DE69521163T2 DE 69521163 T2 DE69521163 T2 DE 69521163T2 DE 69521163 T DE69521163 T DE 69521163T DE 69521163 T DE69521163 T DE 69521163T DE 69521163 T2 DE69521163 T2 DE 69521163T2
- Authority
- DE
- Germany
- Prior art keywords
- optical semiconductor
- semiconductor modulator
- modulator
- optical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12178—Epitaxial growth
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6020876A JPH07230066A (ja) | 1994-02-18 | 1994-02-18 | 半導体光変調器 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69521163D1 DE69521163D1 (de) | 2001-07-12 |
DE69521163T2 true DE69521163T2 (de) | 2002-02-28 |
Family
ID=12039393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69521163T Expired - Fee Related DE69521163T2 (de) | 1994-02-18 | 1995-02-13 | Optischer Halbleitermodulator |
Country Status (4)
Country | Link |
---|---|
US (1) | US5742423A (de) |
EP (1) | EP0672932B1 (de) |
JP (1) | JPH07230066A (de) |
DE (1) | DE69521163T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07230066A (ja) * | 1994-02-18 | 1995-08-29 | Hitachi Ltd | 半導体光変調器 |
JP2955986B2 (ja) * | 1996-05-22 | 1999-10-04 | 日本電気株式会社 | 半導体光変調器及びその製造方法 |
JPH1096879A (ja) * | 1996-09-20 | 1998-04-14 | Nec Corp | 半導体光変調器とこれを用いた光通信装置 |
CA2218262C (en) * | 1996-10-17 | 2001-04-24 | Kenji Kawano | Ultra-high-speed semiconductor optical modulator with traveling-wave electrode |
JP3799062B2 (ja) | 1997-09-19 | 2006-07-19 | 株式会社日立製作所 | 光通信装置及びシステム |
JP3723333B2 (ja) * | 1997-09-29 | 2005-12-07 | 日本碍子株式会社 | 光変調器 |
US6396801B1 (en) | 1998-03-17 | 2002-05-28 | Trw Inc. | Arbitrary waveform modem |
US6466349B1 (en) * | 1998-05-14 | 2002-10-15 | Hughes Electronics Corporation | Integrated optical transmitter |
KR100333482B1 (ko) | 1999-09-15 | 2002-04-25 | 오길록 | 초고속 반도체 광변조기 및 그 제조방법 |
US6421161B1 (en) | 2001-01-18 | 2002-07-16 | The Boeing Company | Fiber modulator and associated method |
US7120183B2 (en) | 2001-07-11 | 2006-10-10 | Optium Corporation | Electro-absorption modulated laser with high operating temperature tolerance |
US6804421B2 (en) * | 2002-01-25 | 2004-10-12 | T-Networks, Inc. | Monolithic expanded beam mode electroabsorption modulator |
JP2011203662A (ja) * | 2010-03-26 | 2011-10-13 | Mitsubishi Electric Corp | 光変調器とその製造方法 |
US8410566B2 (en) * | 2011-07-21 | 2013-04-02 | Kotura, Inc. | Application of electrical field power to light-transmitting medium |
US9153940B2 (en) * | 2013-11-26 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electro-optic modulator device and method of making the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4802182A (en) * | 1987-11-05 | 1989-01-31 | Xerox Corporation | Monolithic two dimensional waveguide coupled cavity laser/modulator |
JP2633921B2 (ja) * | 1988-09-12 | 1997-07-23 | 日本電信電話株式会社 | 導波路付光デバイス装置の製造方法 |
JPH03293622A (ja) * | 1990-04-12 | 1991-12-25 | Hitachi Ltd | 光変調器 |
JPH0529602A (ja) * | 1991-07-22 | 1993-02-05 | Hitachi Ltd | 半導体光集積素子及びその製造方法 |
US5165105A (en) * | 1991-08-02 | 1992-11-17 | Minnesota Minning And Manufacturing Company | Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect |
US5222162A (en) * | 1991-11-27 | 1993-06-22 | Hughes Aircraft Company | Monolithic integrated optical time delay network for antenna beam steering |
JP2739666B2 (ja) * | 1992-06-11 | 1998-04-15 | 国際電信電話株式会社 | 光変調素子 |
US5347601A (en) * | 1993-03-29 | 1994-09-13 | United Technologies Corporation | Integrated optical receiver/transmitter |
JPH07230066A (ja) * | 1994-02-18 | 1995-08-29 | Hitachi Ltd | 半導体光変調器 |
-
1994
- 1994-02-18 JP JP6020876A patent/JPH07230066A/ja active Pending
-
1995
- 1995-02-13 EP EP95101929A patent/EP0672932B1/de not_active Expired - Lifetime
- 1995-02-13 DE DE69521163T patent/DE69521163T2/de not_active Expired - Fee Related
- 1995-02-17 US US08/390,794 patent/US5742423A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0672932A1 (de) | 1995-09-20 |
DE69521163D1 (de) | 2001-07-12 |
JPH07230066A (ja) | 1995-08-29 |
US5742423A (en) | 1998-04-21 |
EP0672932B1 (de) | 2001-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69534889D1 (de) | Optisches Halbleitermodul | |
DE59509361D1 (de) | Optisches Bauelement | |
DE69633203D1 (de) | Halbleiterlaser-Vorrichtungen | |
DE69608850D1 (de) | Halbleiterlaser | |
ATE144605T1 (de) | Stableuchte | |
ATE147492T1 (de) | Stableuchte | |
FI96649C (fi) | Ylinäytteistetty korkeamman asteluvun modulaattori | |
DE69533127D1 (de) | Kühlkörper | |
DE69606812T2 (de) | Halbleiterlaser | |
DE59309409D1 (de) | Lichtmodulator | |
DE69739985D1 (de) | Optischer Modulator | |
DE69500600D1 (de) | Halbleiterlaservorrichtung | |
DE69532223T2 (de) | Optisches Gerät | |
DE69821476D1 (de) | Optischer modulator | |
DE69521163D1 (de) | Optischer Halbleitermodulator | |
DE69521719T2 (de) | Halbleiter-laserelement | |
DE69707405D1 (de) | Optischer Halbleitersender-Empfänger | |
DE69517044D1 (de) | Halbleiterlaservorrichtung | |
DE69418737T2 (de) | Antiresonnater Fabry-Perot-P-I-N-Modulator | |
DE69227644T2 (de) | Optischer Modulator | |
DE69801283T2 (de) | Optisches Halbleiterbauelement | |
DE69705611T2 (de) | Optischer modulator | |
DE9409517U1 (de) | Kühlkörper | |
SE9402196D0 (sv) | Ljusmodulator | |
DE69422521T2 (de) | Lichtmodulator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |