DE69523488D1 - Verfahren und Vorrichtung zum Zünden von Plasmen in einem Process modul - Google Patents

Verfahren und Vorrichtung zum Zünden von Plasmen in einem Process modul

Info

Publication number
DE69523488D1
DE69523488D1 DE69523488T DE69523488T DE69523488D1 DE 69523488 D1 DE69523488 D1 DE 69523488D1 DE 69523488 T DE69523488 T DE 69523488T DE 69523488 T DE69523488 T DE 69523488T DE 69523488 D1 DE69523488 D1 DE 69523488D1
Authority
DE
Germany
Prior art keywords
process module
plasma
electrode
electrodes
radiofrequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69523488T
Other languages
English (en)
Other versions
DE69523488T2 (de
Inventor
Han Westendorp
Hans Meiling
John W Vanderpot
Donald Berrian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron America Inc
Original Assignee
Tokyo Electron America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron America Inc filed Critical Tokyo Electron America Inc
Publication of DE69523488D1 publication Critical patent/DE69523488D1/de
Application granted granted Critical
Publication of DE69523488T2 publication Critical patent/DE69523488T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096Flat-bed apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
DE69523488T 1994-01-19 1995-01-19 Verfahren und Vorrichtung zum Zünden von Plasmen in einem Process modul Expired - Fee Related DE69523488T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/183,529 US5565036A (en) 1994-01-19 1994-01-19 Apparatus and method for igniting plasma in a process module

Publications (2)

Publication Number Publication Date
DE69523488D1 true DE69523488D1 (de) 2001-12-06
DE69523488T2 DE69523488T2 (de) 2002-04-11

Family

ID=22673192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523488T Expired - Fee Related DE69523488T2 (de) 1994-01-19 1995-01-19 Verfahren und Vorrichtung zum Zünden von Plasmen in einem Process modul

Country Status (5)

Country Link
US (2) US5565036A (de)
EP (1) EP0665306B1 (de)
JP (1) JP3158236B2 (de)
AT (1) ATE207978T1 (de)
DE (1) DE69523488T2 (de)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6048435A (en) 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
EP0925605A4 (de) * 1996-07-03 2003-11-05 Tegal Corp Verfahren und anordnung zur ätzung von halbleiterscheiben
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6127277A (en) * 1996-07-03 2000-10-03 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
US5911832A (en) * 1996-10-10 1999-06-15 Eaton Corporation Plasma immersion implantation with pulsed anode
EP0865079A3 (de) * 1997-03-13 1999-10-20 Applied Materials, Inc. Verfahren zur Beseitigung von auf geätzten Platinflächen abgelagerten Verunreinigungen
GB9710380D0 (en) * 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
JPH10340857A (ja) * 1997-06-10 1998-12-22 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体製造装置
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
JPH1187247A (ja) * 1997-09-02 1999-03-30 Matsushita Electron Corp 半導体装置の製造装置及びその製造方法
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6039849A (en) * 1997-10-28 2000-03-21 Motorola, Inc. Method for the manufacture of electronic components
US6919168B2 (en) 1998-01-13 2005-07-19 Applied Materials, Inc. Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
US6323132B1 (en) 1998-01-13 2001-11-27 Applied Materials, Inc. Etching methods for anisotropic platinum profile
WO1999036956A1 (en) 1998-01-13 1999-07-22 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6265318B1 (en) 1998-01-13 2001-07-24 Applied Materials, Inc. Iridium etchant methods for anisotropic profile
US6149829A (en) 1998-03-17 2000-11-21 James W. Mitzel Plasma surface treatment method and resulting device
US6551939B2 (en) * 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US6235213B1 (en) 1998-05-18 2001-05-22 Micron Technology, Inc. Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers
US6187133B1 (en) * 1998-05-29 2001-02-13 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry
US6277759B1 (en) * 1998-08-27 2001-08-21 Micron Technology, Inc. Plasma etching methods
JP4180706B2 (ja) * 1998-09-24 2008-11-12 和夫 寺嶋 物質・材料プロセッシング方法
JP2000348896A (ja) * 1999-03-26 2000-12-15 Canon Inc プラズマ発生方法、プラズマ発生装置及びプラズマ反応によるガス処理方法
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
US20020129902A1 (en) * 1999-05-14 2002-09-19 Babayan Steven E. Low-temperature compatible wide-pressure-range plasma flow device
US6156164A (en) * 1999-06-22 2000-12-05 Tokyo Electron Limited Virtual shutter method and apparatus for preventing damage to gallium arsenide substrates during processing
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
JP4221847B2 (ja) * 1999-10-25 2009-02-12 パナソニック電工株式会社 プラズマ処理装置及びプラズマ点灯方法
EP1312247A2 (de) * 2000-07-05 2003-05-21 CRT Holdings, Inc. Mittels elektromagnetischer strahlung initierter plasmareaktor
US20020121500A1 (en) * 2000-12-22 2002-09-05 Rao Annapragada Method of etching with NH3 and fluorine chemistries
JP3758520B2 (ja) * 2001-04-26 2006-03-22 日新イオン機器株式会社 イオンビーム照射装置および関連の方法
US6673106B2 (en) * 2001-06-14 2004-01-06 Cordis Neurovascular, Inc. Intravascular stent device
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
JP4137419B2 (ja) * 2001-09-28 2008-08-20 東京エレクトロン株式会社 プラズマ処理装置
KR100775175B1 (ko) * 2001-10-31 2007-11-12 동경 엘렉트론 주식회사 높은 어스펙트비의 반도체장치 에칭방법
US7887889B2 (en) * 2001-12-14 2011-02-15 3M Innovative Properties Company Plasma fluorination treatment of porous materials
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
US7195648B2 (en) * 2002-05-16 2007-03-27 Cordis Neurovascular, Inc. Intravascular stent device
US6909237B1 (en) * 2002-07-25 2005-06-21 The Regents Of The University Of California Production of stable, non-thermal atmospheric pressure rf capacitive plasmas using gases other than helium or neon
US6939800B1 (en) * 2002-12-16 2005-09-06 Lsi Logic Corporation Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures
GB0309932D0 (en) 2003-04-30 2003-06-04 Boc Group Plc Apparatus and method for forming a plasma
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
JP4806516B2 (ja) * 2003-08-29 2011-11-02 Okiセミコンダクタ株式会社 半導体装置のプラズマエッチング方法
DE10344612A1 (de) * 2003-09-25 2005-05-04 Infineon Technologies Ag Verfahren zur Reinigung von ALD-Kammern
US7237752B1 (en) * 2004-05-18 2007-07-03 Lockheed Martin Corporation System and method for reducing plasma induced communication disruption utilizing electrophilic injectant and sharp reentry vehicle nose shaping
US20080014445A1 (en) * 2004-06-24 2008-01-17 The Regents Of The University Of California Chamberless Plasma Deposition of Coatings
US7202187B2 (en) * 2004-06-29 2007-04-10 International Business Machines Corporation Method of forming sidewall spacer using dual-frequency plasma enhanced CVD
NL1026532C2 (nl) * 2004-06-30 2006-01-02 Tno Methode en middelen voor generatie van een plasma bij atmosferische druk.
US7279429B1 (en) * 2004-10-01 2007-10-09 Advanced Micro Devices, Inc. Method to improve ignition in plasma etching or plasma deposition steps
US20060156983A1 (en) * 2005-01-19 2006-07-20 Surfx Technologies Llc Low temperature, atmospheric pressure plasma generation and applications
US8328982B1 (en) 2005-09-16 2012-12-11 Surfx Technologies Llc Low-temperature, converging, reactive gas source and method of use
US8267884B1 (en) 2005-10-07 2012-09-18 Surfx Technologies Llc Wound treatment apparatus and method
US8632651B1 (en) 2006-06-28 2014-01-21 Surfx Technologies Llc Plasma surface treatment of composites for bonding
JP4608511B2 (ja) * 2007-02-09 2011-01-12 国立大学法人東京工業大学 表面処理装置
JP5024667B2 (ja) * 2007-06-20 2012-09-12 国立大学法人名古屋大学 ラジカル発生装置
JP4585574B2 (ja) * 2008-02-26 2010-11-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US20100173448A1 (en) * 2009-01-07 2010-07-08 Applied Materials, Inc. High frequency plasma enhanced chemical vapor deposition
US20120298302A1 (en) * 2011-05-23 2012-11-29 Yaomin Xia Vacuum plasma pprocessing chamber with a wafer chuck facing downward above the plasma
US8735210B2 (en) * 2012-06-28 2014-05-27 International Business Machines Corporation High efficiency solar cells fabricated by inexpensive PECVD
JP5404950B1 (ja) * 2012-07-18 2014-02-05 ラボテック株式会社 堆積装置および堆積方法
KR101482630B1 (ko) * 2012-11-07 2015-01-14 삼성디스플레이 주식회사 기상 증착 장치
US10032609B1 (en) 2013-12-18 2018-07-24 Surfx Technologies Llc Low temperature atmospheric pressure plasma applications
US10800092B1 (en) 2013-12-18 2020-10-13 Surfx Technologies Llc Low temperature atmospheric pressure plasma for cleaning and activating metals
US9406485B1 (en) 2013-12-18 2016-08-02 Surfx Technologies Llc Argon and helium plasma apparatus and methods
US9799565B2 (en) 2014-12-24 2017-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device structure with gate
US10827601B1 (en) 2016-05-03 2020-11-03 Surfx Technologies Llc Handheld plasma device
US20180059289A1 (en) * 2016-09-01 2018-03-01 Trion Technology Apparatus for plasma processing on optical surfaces and methods of manufacturing and use thereof
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR20210107716A (ko) 2019-01-22 2021-09-01 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
EP3908087A4 (de) * 2019-05-09 2022-03-16 SPP Technologies Co., Ltd. Plasmazündverfahren und plasmagenerator
CN111455330A (zh) * 2020-05-20 2020-07-28 江苏东鋆光伏科技有限公司 利用直流反应溅射法制备三氧化二铝薄膜的方法
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
CN114182212A (zh) * 2021-11-23 2022-03-15 安徽工业大学 一种使用真空紫外光提高气相沉积过程离化率的方法
CN114164417A (zh) * 2021-11-23 2022-03-11 安徽工业大学 一种使用真空紫外光实现气相沉积中不同粒子可控离化的方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
US4183780A (en) * 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching
JPS5917237A (ja) * 1982-07-20 1984-01-28 Anelva Corp グロ−放電装置
JPS6089575A (ja) * 1983-10-21 1985-05-20 Seiko Epson Corp シリコン窒化膜の製造方法
DE3587369D1 (de) * 1984-01-28 1993-07-01 Philips Patentverwaltung Vorrichtung zur beschichtung eines substrates mittels plasma-chemical vapour deposition oder kathodenzerstaeubung und damit ausgefuehrtes verfahren.
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
US4557819A (en) * 1984-07-20 1985-12-10 Varian Associates, Inc. System for igniting and controlling a wafer processing plasma
US4617079A (en) * 1985-04-12 1986-10-14 The Perkin Elmer Corporation Plasma etching system
US4664938A (en) * 1985-05-06 1987-05-12 Phillips Petroleum Company Method for deposition of silicon
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
CH668145A5 (fr) * 1986-09-26 1988-11-30 Inst Microtechnique De L Unive Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma.
US4990365A (en) * 1988-08-17 1991-02-05 Siemens Aktiengesellschaft Method for producing silicon boronitride layers
JPH02101740A (ja) * 1988-10-11 1990-04-13 Anelva Corp プラズマエッチング装置
EP0408966A3 (en) * 1989-07-19 1991-04-24 Siemens Aktiengesellschaft Electrophotographic recording material and process for its manufacture
JPH0367496A (ja) * 1989-08-07 1991-03-22 Jeol Ltd 誘導プラズマ発生装置
US5102496A (en) * 1989-09-26 1992-04-07 Applied Materials, Inc. Particulate contamination prevention using low power plasma
JPH03203317A (ja) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd プラズマ処理装置
GB2241250A (en) * 1990-01-26 1991-08-28 Fuji Electric Co Ltd RF plasma CVD employing an electrode with a shower supply surface
US5085727A (en) * 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
JP2859721B2 (ja) * 1990-08-07 1999-02-24 キヤノン株式会社 プラズマ処理装置
JP2519364B2 (ja) * 1990-12-03 1996-07-31 アプライド マテリアルズ インコーポレイテッド Uhf/vhf共振アンテナ供給源を用いたプラズマリアクタ
DE9100910U1 (de) * 1991-01-26 1991-04-25 Bauer, Robert, Dr., 8000 Muenchen, De
EP0510340B1 (de) * 1991-04-23 1995-05-10 Balzers Aktiengesellschaft Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer
JPH04326725A (ja) * 1991-04-26 1992-11-16 Tokyo Electron Ltd プラズマ装置
DE4122452C2 (de) * 1991-07-06 1993-10-28 Schott Glaswerke Verfahren und Vorrichtung zum Zünden von CVD-Plasmen
US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5387842A (en) * 1993-05-28 1995-02-07 The University Of Tennessee Research Corp. Steady-state, glow discharge plasma

Also Published As

Publication number Publication date
US5565036A (en) 1996-10-15
US5789867A (en) 1998-08-04
ATE207978T1 (de) 2001-11-15
EP0665306B1 (de) 2001-10-31
JPH07278821A (ja) 1995-10-24
JP3158236B2 (ja) 2001-04-23
EP0665306A1 (de) 1995-08-02
DE69523488T2 (de) 2002-04-11

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