DE69523743D1 - Überlöschungsdetektion in einer niederspannungs-eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung - Google Patents

Überlöschungsdetektion in einer niederspannungs-eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung

Info

Publication number
DE69523743D1
DE69523743D1 DE69523743T DE69523743T DE69523743D1 DE 69523743 D1 DE69523743 D1 DE 69523743D1 DE 69523743 T DE69523743 T DE 69523743T DE 69523743 T DE69523743 T DE 69523743T DE 69523743 D1 DE69523743 D1 DE 69523743D1
Authority
DE
Germany
Prior art keywords
fowler
erasing
low voltage
voltage transistor
flash eeprom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69523743T
Other languages
English (en)
Other versions
DE69523743T2 (de
Inventor
Shang-De Chang
Jia-Hwang Chang
Edwin Chow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Corp
Original Assignee
Rohm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Corp filed Critical Rohm Corp
Publication of DE69523743D1 publication Critical patent/DE69523743D1/de
Application granted granted Critical
Publication of DE69523743T2 publication Critical patent/DE69523743T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/345—Circuits or methods to detect overerased nonvolatile memory cells, usually during erasure verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
DE69523743T 1994-03-03 1995-02-22 Überlöschungsdetektion in einer niederspannungs-eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung Expired - Lifetime DE69523743T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20532794A 1994-03-03 1994-03-03
PCT/US1995/002240 WO1995024057A2 (en) 1994-03-03 1995-02-22 Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase

Publications (2)

Publication Number Publication Date
DE69523743D1 true DE69523743D1 (de) 2001-12-13
DE69523743T2 DE69523743T2 (de) 2002-08-01

Family

ID=22761753

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69523743T Expired - Lifetime DE69523743T2 (de) 1994-03-03 1995-02-22 Überlöschungsdetektion in einer niederspannungs-eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung
DE69530527T Expired - Lifetime DE69530527T2 (de) 1994-03-03 1995-02-22 Niederspannungs-Eintransistor-FLASH-EEPROM-Zelle mit Fowler-Nordheim Programmier- und Löschung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69530527T Expired - Lifetime DE69530527T2 (de) 1994-03-03 1995-02-22 Niederspannungs-Eintransistor-FLASH-EEPROM-Zelle mit Fowler-Nordheim Programmier- und Löschung

Country Status (9)

Country Link
US (5) US5687120A (de)
EP (2) EP0748521B1 (de)
JP (2) JP3584338B2 (de)
KR (1) KR100256322B1 (de)
CN (1) CN1057171C (de)
AT (2) ATE208536T1 (de)
CA (1) CA2184724A1 (de)
DE (2) DE69523743T2 (de)
WO (1) WO1995024057A2 (de)

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ATE208536T1 (de) 2001-11-15
KR100256322B1 (ko) 2000-05-15
US5687120A (en) 1997-11-11
US5615147A (en) 1997-03-25
KR970701929A (ko) 1997-04-12
DE69530527D1 (de) 2003-05-28
ATE238610T1 (de) 2003-05-15
US5940325A (en) 1999-08-17
EP0748521B1 (de) 2001-11-07
CN1057171C (zh) 2000-10-04
EP0933821A3 (de) 1999-08-11
JP4104049B2 (ja) 2008-06-18
US5689459A (en) 1997-11-18
EP0933821A2 (de) 1999-08-04
WO1995024057A2 (en) 1995-09-08
JPH09510051A (ja) 1997-10-07
CN1147314A (zh) 1997-04-09
DE69530527T2 (de) 2004-04-08
WO1995024057A3 (en) 1995-11-23
US5587947A (en) 1996-12-24
JP3584338B2 (ja) 2004-11-04
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EP0933821B1 (de) 2003-04-23
DE69523743T2 (de) 2002-08-01

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