DE69524021D1 - Elektrostatische Entladungsschutzanordnung für MOS-ingegrierte Schaltungen - Google Patents

Elektrostatische Entladungsschutzanordnung für MOS-ingegrierte Schaltungen

Info

Publication number
DE69524021D1
DE69524021D1 DE69524021T DE69524021T DE69524021D1 DE 69524021 D1 DE69524021 D1 DE 69524021D1 DE 69524021 T DE69524021 T DE 69524021T DE 69524021 T DE69524021 T DE 69524021T DE 69524021 D1 DE69524021 D1 DE 69524021D1
Authority
DE
Germany
Prior art keywords
mos
integrated circuits
electrostatic discharge
discharge protection
protection arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69524021T
Other languages
English (en)
Other versions
DE69524021T2 (de
Inventor
Philippe Crevel
Alain Quero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Switzerland SARL
Original Assignee
Atmel Nantes SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Nantes SA filed Critical Atmel Nantes SA
Publication of DE69524021D1 publication Critical patent/DE69524021D1/de
Application granted granted Critical
Publication of DE69524021T2 publication Critical patent/DE69524021T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
DE69524021T 1994-09-21 1995-09-18 Elektrostatische Entladungsschutzanordnung für MOS-ingegrierte Schaltungen Expired - Lifetime DE69524021T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/309,574 US5440151A (en) 1993-04-09 1994-09-21 Electrostatic discharge protection device for MOS integrated circuits

Publications (2)

Publication Number Publication Date
DE69524021D1 true DE69524021D1 (de) 2002-01-03
DE69524021T2 DE69524021T2 (de) 2002-07-18

Family

ID=23198766

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524021T Expired - Lifetime DE69524021T2 (de) 1994-09-21 1995-09-18 Elektrostatische Entladungsschutzanordnung für MOS-ingegrierte Schaltungen

Country Status (3)

Country Link
US (1) US5440151A (de)
EP (1) EP0703621B1 (de)
DE (1) DE69524021T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100223923B1 (ko) * 1996-11-19 1999-10-15 구본준 정전기 방지장치
US5949094A (en) * 1997-08-29 1999-09-07 Texas Instruments Incorporated ESD protection for high density DRAMs using triple-well technology
TW445627B (en) * 1999-10-04 2001-07-11 Winbond Electronics Corp Electrostatic discharge buffer apparatus
US6512662B1 (en) 1999-11-30 2003-01-28 Illinois Institute Of Technology Single structure all-direction ESD protection for integrated circuits
US6674129B1 (en) * 1999-12-17 2004-01-06 Koninklijke Phillips Electronics N.V. ESD diode structure
US6501630B1 (en) 1999-12-17 2002-12-31 Koninklijke Philips Electronics N.V. Bi-directional ESD diode structure
US6445052B1 (en) * 2001-01-05 2002-09-03 United Microelectronics Corp. Power lateral diffused MOS transistor
US6635931B1 (en) 2002-04-02 2003-10-21 Illinois Institute Of Technology Bonding pad-oriented all-mode ESD protection structure
TW586124B (en) * 2002-09-18 2004-05-01 Macronix Int Co Ltd ESD protection apparatus and method for a high-voltage input pad
KR100855558B1 (ko) * 2007-07-02 2008-09-01 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
JP5386916B2 (ja) * 2008-09-30 2014-01-15 ソニー株式会社 トランジスタ型保護素子、半導体集積回路およびその製造方法
US8198651B2 (en) * 2008-10-13 2012-06-12 Infineon Technologies Ag Electro static discharge protection device
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8742455B2 (en) * 2011-05-11 2014-06-03 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8816389B2 (en) 2011-10-21 2014-08-26 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8803193B2 (en) 2011-05-11 2014-08-12 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113358A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Semiconductor device
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
SE455552B (sv) * 1985-02-26 1988-07-18 Asea Ab Halvledaranordning innefattande en overspenningsskyddskrets
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
US5012317A (en) * 1986-04-11 1991-04-30 Texas Instruments Incorporated Electrostatic discharge protection circuit
US4939616A (en) * 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
US4896243A (en) * 1988-12-20 1990-01-23 Texas Instruments Incorporated Efficient ESD input protection scheme
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
US5272371A (en) * 1991-11-19 1993-12-21 Sgs-Thomson Microelectronics, Inc. Electrostatic discharge protection structure
US5291051A (en) * 1992-09-11 1994-03-01 National Semiconductor Corporation ESD protection for inputs requiring operation beyond supply voltages

Also Published As

Publication number Publication date
DE69524021T2 (de) 2002-07-18
EP0703621B1 (de) 2001-11-21
EP0703621A2 (de) 1996-03-27
US5440151A (en) 1995-08-08
EP0703621A3 (de) 1996-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ATMEL SWITZERLAND S.A.R.L., FRIBOURG, CH