DE69525100D1 - Hügelfreie mehrschichtige Metallüberbahnen für Hochleistungs-Dünnfilmstruktur - Google Patents

Hügelfreie mehrschichtige Metallüberbahnen für Hochleistungs-Dünnfilmstruktur

Info

Publication number
DE69525100D1
DE69525100D1 DE69525100T DE69525100T DE69525100D1 DE 69525100 D1 DE69525100 D1 DE 69525100D1 DE 69525100 T DE69525100 T DE 69525100T DE 69525100 T DE69525100 T DE 69525100T DE 69525100 D1 DE69525100 D1 DE 69525100D1
Authority
DE
Germany
Prior art keywords
hill
film structure
multilayer metal
performance thin
free multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69525100T
Other languages
English (en)
Other versions
DE69525100T2 (de
Inventor
Jackson H Ho
Ronald T Fulks
Tzu-Chin Chuang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of DE69525100D1 publication Critical patent/DE69525100D1/de
Application granted granted Critical
Publication of DE69525100T2 publication Critical patent/DE69525100T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/12743—Next to refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
DE1995625100 1994-04-28 1995-04-26 Hügelfreie mehrschichtige Metallüberbahnen für Hochleistungs-Dünnfilmstruktur Expired - Lifetime DE69525100T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/234,897 US5518805A (en) 1994-04-28 1994-04-28 Hillock-free multilayer metal lines for high performance thin film structures

Publications (2)

Publication Number Publication Date
DE69525100D1 true DE69525100D1 (de) 2002-03-14
DE69525100T2 DE69525100T2 (de) 2002-07-18

Family

ID=22883263

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1995625100 Expired - Lifetime DE69525100T2 (de) 1994-04-28 1995-04-26 Hügelfreie mehrschichtige Metallüberbahnen für Hochleistungs-Dünnfilmstruktur

Country Status (4)

Country Link
US (1) US5518805A (de)
EP (1) EP0681328B1 (de)
JP (2) JPH07302792A (de)
DE (1) DE69525100T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693983A (en) * 1994-04-28 1997-12-02 Xerox Corporation Thin-film structure with conductive molybdenum-chromium line
JPH0843860A (ja) * 1994-04-28 1996-02-16 Xerox Corp 低電圧駆動アクティブ・マトリックス液晶ディスプレイにおける電気的に分離されたピクセル・エレメント
JP3403812B2 (ja) * 1994-05-31 2003-05-06 株式会社半導体エネルギー研究所 薄膜トランジスタを用いた半導体装置の作製方法
US5608557A (en) * 1995-01-03 1997-03-04 Xerox Corporation Circuitry with gate line crossing semiconductor line at two or more channels
US5648674A (en) * 1995-06-07 1997-07-15 Xerox Corporation Array circuitry with conductive lines, contact leads, and storage capacitor electrode all formed in layer that includes highly conductive metal
US5693567A (en) * 1995-06-07 1997-12-02 Xerox Corporation Separately etching insulating layer for contacts within array and for peripheral pads
US5731216A (en) * 1996-03-27 1998-03-24 Image Quest Technologies, Inc. Method of making an active matrix display incorporating an improved TFT
JPH10163501A (ja) 1996-11-29 1998-06-19 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型トランジスタ
FR2756572B1 (fr) 1996-12-04 1999-01-08 Pechiney Aluminium Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques
KR100229613B1 (ko) * 1996-12-30 1999-11-15 구자홍 액정 표시 장치 및 제조 방법
US6154188A (en) * 1997-04-30 2000-11-28 Candescent Technologies Corporation Integrated metallization for displays
US5969423A (en) 1997-07-15 1999-10-19 Micron Technology, Inc. Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
US6222271B1 (en) * 1997-07-15 2001-04-24 Micron Technology, Inc. Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
US6149792A (en) * 1997-09-30 2000-11-21 Candescent Technologies Corporation Row electrode anodization
JPH11265938A (ja) * 1998-03-18 1999-09-28 Toshiba Corp 半導体装置及びその製造方法
US6057238A (en) * 1998-03-20 2000-05-02 Micron Technology, Inc. Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
US6396147B1 (en) 1998-05-16 2002-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with metal-oxide conductors
US6380627B1 (en) * 1998-06-26 2002-04-30 The Regents Of The University Of California Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication
KR100361570B1 (ko) * 1999-12-23 2002-11-21 아남반도체 주식회사 반사형 마이크로 액정 표시 장치용 기판 제조 방법
US6780687B2 (en) * 2000-01-28 2004-08-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a heat absorbing layer
KR100507343B1 (ko) * 2001-11-28 2005-08-08 삼성에스디아이 주식회사 박막트랜지스터용 금속배선구조 및 그의 형성방법
US7371427B2 (en) * 2003-05-20 2008-05-13 Applied Materials, Inc. Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
US7723228B2 (en) * 2003-05-20 2010-05-25 Applied Materials, Inc. Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
JP4729661B2 (ja) * 2003-07-11 2011-07-20 奇美電子股▲ふん▼有限公司 ヒロックが無いアルミニウム層及びその形成方法
DE102004036140A1 (de) * 2004-07-26 2006-03-23 Infineon Technologies Ag Halbleiterbauelement
DE102004036142B4 (de) * 2004-07-26 2009-04-09 Infineon Technologies Ag Halbleiterbauelement mit einer Metallisierung mit mehreren durch zumindest eine Barriereschicht getrennten Metallisierungsschichten sowie Verfahren zu dessen Herstellung
US9024327B2 (en) * 2007-12-14 2015-05-05 Cree, Inc. Metallization structure for high power microelectronic devices
US8822336B2 (en) 2011-06-16 2014-09-02 United Microelectronics Corp. Through-silicon via forming method
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4522890A (en) * 1979-10-31 1985-06-11 Illinois Tool Works Inc. Multilayer high attenuation shielding structure
US4673623A (en) * 1985-05-06 1987-06-16 The Board Of Trustees Of The Leland Stanford Junior University Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects
JPS6329548A (ja) * 1986-07-09 1988-02-08 シ−メンス、アクチエンゲゼルシヤフト 集積回路の金属化部
JP2511892B2 (ja) * 1986-08-08 1996-07-03 松下電器産業株式会社 多層薄膜配線及びその形成方法
DE3783405T2 (de) * 1986-08-19 1993-08-05 Fujitsu Ltd Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben.
JPS63155743A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd 半導体装置
US4980752A (en) * 1986-12-29 1990-12-25 Inmos Corporation Transition metal clad interconnect for integrated circuits
US4910580A (en) * 1987-08-27 1990-03-20 Siemens Aktiengesellschaft Method for manufacturing a low-impedance, planar metallization composed of aluminum or of an aluminum alloy
US5071714A (en) * 1989-04-17 1991-12-10 International Business Machines Corporation Multilayered intermetallic connection for semiconductor devices
JPH03222333A (ja) * 1990-01-26 1991-10-01 Sanyo Electric Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0681328A3 (de) 1997-02-12
EP0681328A2 (de) 1995-11-08
JP2009044194A (ja) 2009-02-26
US5518805A (en) 1996-05-21
EP0681328B1 (de) 2002-01-23
JPH07302792A (ja) 1995-11-14
DE69525100T2 (de) 2002-07-18

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