DE69525273D1 - Verfahren zur Herstellung einer integrierten Schaltung - Google Patents
Verfahren zur Herstellung einer integrierten SchaltungInfo
- Publication number
- DE69525273D1 DE69525273D1 DE69525273T DE69525273T DE69525273D1 DE 69525273 D1 DE69525273 D1 DE 69525273D1 DE 69525273 T DE69525273 T DE 69525273T DE 69525273 T DE69525273 T DE 69525273T DE 69525273 D1 DE69525273 D1 DE 69525273D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- integrated circuit
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/028—Dicing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/220,771 US5516728A (en) | 1994-03-31 | 1994-03-31 | Process for fabircating an integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69525273D1 true DE69525273D1 (de) | 2002-03-21 |
DE69525273T2 DE69525273T2 (de) | 2002-09-19 |
Family
ID=22824902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69525273T Expired - Lifetime DE69525273T2 (de) | 1994-03-31 | 1995-03-21 | Verfahren zur Herstellung einer integrierten Schaltung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5516728A (de) |
EP (1) | EP0675536B1 (de) |
JP (1) | JP3335035B2 (de) |
KR (1) | KR100371120B1 (de) |
CA (1) | CA2143077C (de) |
DE (1) | DE69525273T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5832585A (en) * | 1996-08-13 | 1998-11-10 | National Semiconductor Corporation | Method of separating micro-devices formed on a substrate |
US5923995A (en) * | 1997-04-18 | 1999-07-13 | National Semiconductor Corporation | Methods and apparatuses for singulation of microelectromechanical systems |
DE19756325A1 (de) * | 1997-12-18 | 1999-07-01 | Daimler Chrysler Ag | Halbleiterscheibe mit integrierten Einzelbauelementen, Verfahren und Vorrichtung zur Herstellung einer Halbleiterscheibe |
US6150240A (en) * | 1998-07-27 | 2000-11-21 | Motorola, Inc. | Method and apparatus for singulating semiconductor devices |
JP3516592B2 (ja) * | 1998-08-18 | 2004-04-05 | 沖電気工業株式会社 | 半導体装置およびその製造方法 |
US6251705B1 (en) * | 1999-10-22 | 2001-06-26 | Agere Systems Inc. | Low profile integrated circuit packages |
US6656768B2 (en) | 2001-02-08 | 2003-12-02 | Texas Instruments Incorporated | Flip-chip assembly of protected micromechanical devices |
US6507082B2 (en) * | 2000-02-22 | 2003-01-14 | Texas Instruments Incorporated | Flip-chip assembly of protected micromechanical devices |
KR100332967B1 (ko) * | 2000-05-10 | 2002-04-19 | 윤종용 | 디지털 마이크로-미러 디바이스 패키지의 제조 방법 |
US6335224B1 (en) * | 2000-05-16 | 2002-01-01 | Sandia Corporation | Protection of microelectronic devices during packaging |
US6420206B1 (en) | 2001-01-30 | 2002-07-16 | Axsun Technologies, Inc. | Optical membrane singulation process utilizing backside and frontside protective coating during die saw |
KR100451950B1 (ko) * | 2002-02-25 | 2004-10-08 | 삼성전자주식회사 | 이미지 센서 소자 웨이퍼 소잉 방법 |
US6580054B1 (en) * | 2002-06-10 | 2003-06-17 | New Wave Research | Scribing sapphire substrates with a solid state UV laser |
US6582983B1 (en) * | 2002-07-12 | 2003-06-24 | Keteca Singapore Singapore | Method and wafer for maintaining ultra clean bonding pads on a wafer |
US6759276B1 (en) * | 2002-07-30 | 2004-07-06 | Taiwan Semiconductor Manufacturing Company | Material to improve CMOS image sensor yield during wafer sawing |
US7071032B2 (en) * | 2002-08-01 | 2006-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Material to improve image sensor yield during wafer sawing |
US20070065964A1 (en) * | 2005-09-22 | 2007-03-22 | Yinon Degani | Integrated passive devices |
US7297567B2 (en) | 2006-01-10 | 2007-11-20 | Knowles Electronics, Llc. | Method for singulating a released microelectromechanical system wafer |
DE102006025671B4 (de) * | 2006-06-01 | 2011-12-15 | Infineon Technologies Ag | Verfahren zur Herstellung von dünnen integrierten Halbleitereinrichtungen |
JP5011981B2 (ja) * | 2006-11-30 | 2012-08-29 | 富士通株式会社 | デバイス素子製造方法およびダイシング方法 |
US7927916B2 (en) * | 2007-04-04 | 2011-04-19 | Micron Technology, Inc. | Optic wafer with reliefs, wafer assembly including same and methods of dicing wafer assembly |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3699644A (en) * | 1971-01-04 | 1972-10-24 | Sylvania Electric Prod | Method of dividing wafers |
JPS5258446A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Flip frop circuit |
JPS593943A (ja) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5992536A (ja) * | 1982-11-18 | 1984-05-28 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS5994434A (ja) * | 1982-11-19 | 1984-05-31 | Nitto Electric Ind Co Ltd | 半導体素子の脱着方法 |
JPS6024035A (ja) * | 1983-07-19 | 1985-02-06 | Sanyo Electric Co Ltd | 半導体ウエハの切断方法 |
JPS6018139B2 (ja) * | 1983-11-22 | 1985-05-09 | 三菱電機株式会社 | マスク製作方法 |
JPS6016442A (ja) * | 1984-05-25 | 1985-01-28 | Hitachi Ltd | 半導体装置の製法 |
JPS6196585A (ja) * | 1984-10-18 | 1986-05-15 | Fujitsu Ltd | ウエ−ハのダイシング方法 |
DE3447457A1 (de) * | 1984-12-27 | 1986-07-03 | Wacker-Chemie GmbH, 8000 München | Vernetzbare organopolysiloxane, verfahren zu ihrer herstellung und verwendung dieser organopolysiloxane |
DE3665191D1 (en) * | 1985-02-14 | 1989-09-28 | Bando Chemical Ind | A pressure sensitive adhesive and a pressure sensitive adhesive film having thereon a layer of the same |
JPS62112348A (ja) * | 1985-11-12 | 1987-05-23 | Toshiba Corp | 半導体装置の製造方法 |
US5393706A (en) * | 1993-01-07 | 1995-02-28 | Texas Instruments Incorporated | Integrated partial sawing process |
-
1994
- 1994-03-31 US US08/220,771 patent/US5516728A/en not_active Expired - Lifetime
-
1995
- 1995-02-21 CA CA002143077A patent/CA2143077C/en not_active Expired - Lifetime
- 1995-03-21 EP EP95301883A patent/EP0675536B1/de not_active Expired - Lifetime
- 1995-03-21 DE DE69525273T patent/DE69525273T2/de not_active Expired - Lifetime
- 1995-03-30 KR KR1019950006998A patent/KR100371120B1/ko active IP Right Grant
- 1995-03-31 JP JP07429595A patent/JP3335035B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0675536B1 (de) | 2002-02-06 |
CA2143077C (en) | 1999-08-17 |
US5516728A (en) | 1996-05-14 |
CA2143077A1 (en) | 1995-10-01 |
JPH07283175A (ja) | 1995-10-27 |
JP3335035B2 (ja) | 2002-10-15 |
EP0675536A1 (de) | 1995-10-04 |
KR100371120B1 (ko) | 2003-03-19 |
KR950034680A (ko) | 1995-12-28 |
DE69525273T2 (de) | 2002-09-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee | ||
8370 | Indication of lapse of patent is to be deleted |