DE69527484D1 - Herstellungsverfahren für eine leitungsstruktur für integrierte schaltungen - Google Patents
Herstellungsverfahren für eine leitungsstruktur für integrierte schaltungenInfo
- Publication number
- DE69527484D1 DE69527484D1 DE69527484T DE69527484T DE69527484D1 DE 69527484 D1 DE69527484 D1 DE 69527484D1 DE 69527484 T DE69527484 T DE 69527484T DE 69527484 T DE69527484 T DE 69527484T DE 69527484 D1 DE69527484 D1 DE 69527484D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- integrated circuits
- line structure
- line
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24004494A | 1994-05-09 | 1994-05-09 | |
PCT/US1995/005031 WO1995031007A1 (en) | 1994-05-09 | 1995-04-24 | Interconnect structures for integrated circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69527484D1 true DE69527484D1 (de) | 2002-08-29 |
DE69527484T2 DE69527484T2 (de) | 2003-04-03 |
Family
ID=22904875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69527484T Expired - Lifetime DE69527484T2 (de) | 1994-05-09 | 1995-04-24 | Herstellungsverfahren für eine leitungsstruktur für integrierte schaltungen |
Country Status (4)
Country | Link |
---|---|
US (4) | US5571751A (de) |
EP (2) | EP0955672A3 (de) |
DE (1) | DE69527484T2 (de) |
WO (1) | WO1995031007A1 (de) |
Families Citing this family (67)
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---|---|---|---|---|
KR960006068A (ko) * | 1994-07-29 | 1996-02-23 | 가네꼬 히사시 | 반도체 장치 및 이의 제조 방법 |
KR0138307B1 (ko) * | 1994-12-14 | 1998-06-01 | 김광호 | 반도체 장치의 측면콘택 형성방법 |
US6740573B2 (en) | 1995-02-17 | 2004-05-25 | Micron Technology, Inc. | Method for forming an integrated circuit interconnect using a dual poly process |
JPH08306774A (ja) * | 1995-05-01 | 1996-11-22 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JPH08321545A (ja) * | 1995-05-24 | 1996-12-03 | Yamaha Corp | 配線形成法 |
US5976971A (en) * | 1995-07-19 | 1999-11-02 | Ricoh Company, Ltd. | Fabrication process of a semiconductor device having an interconnection structure |
US5814186A (en) * | 1995-08-28 | 1998-09-29 | Advanced Micro Devices, Inc. | SOG etchant gas and method for using same |
US5943598A (en) * | 1995-10-19 | 1999-08-24 | Stmicroelectronics, Inc. | Integrated circuit with planarized dielectric layer between successive polysilicon layers |
US5814560A (en) * | 1995-11-29 | 1998-09-29 | Advanced Micro Devices, Inc. | Metallization sidewall passivation technology for deep sub-half micrometer IC applications |
JP2739855B2 (ja) * | 1995-12-14 | 1998-04-15 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5821163A (en) * | 1996-02-13 | 1998-10-13 | Vlsi Technology, Inc. | Method for achieving accurate SOG etchback selectivity |
US5840624A (en) * | 1996-03-15 | 1998-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd | Reduction of via over etching for borderless contacts |
JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
US5854515A (en) * | 1996-07-23 | 1998-12-29 | Advanced Micro Devices, Inc. | Integrated circuit having conductors of enhanced cross-sectional area |
JP3701405B2 (ja) * | 1996-08-27 | 2005-09-28 | 株式会社ルネサステクノロジ | スタティック型半導体記憶装置 |
US5847462A (en) * | 1996-11-14 | 1998-12-08 | Advanced Micro Devices, Inc. | Integrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layer |
US5977638A (en) * | 1996-11-21 | 1999-11-02 | Cypress Semiconductor Corp. | Edge metal for interconnect layers |
US6107190A (en) * | 1997-01-30 | 2000-08-22 | Nec Corporation | Method of fabricating semiconductor device |
KR100255591B1 (ko) | 1997-03-06 | 2000-05-01 | 구본준 | 박막 트랜지스터 어레이의 배선 연결 구조 및 그 제조 방법 |
DE69821399T2 (de) * | 1997-03-25 | 2004-12-09 | Amitec-Advanced Multilayer Interconnect Technologies Ltd. | Elektronische Verdrahtungsstruktur und ihre Herstellung |
US6395629B1 (en) * | 1997-04-16 | 2002-05-28 | Stmicroelectronics, Inc. | Interconnect method and structure for semiconductor devices |
US5970375A (en) * | 1997-05-03 | 1999-10-19 | Advanced Micro Devices, Inc. | Semiconductor fabrication employing a local interconnect |
US6197685B1 (en) * | 1997-07-11 | 2001-03-06 | Matsushita Electronics Corporation | Method of producing multilayer wiring device with offset axises of upper and lower plugs |
US6731007B1 (en) * | 1997-08-29 | 2004-05-04 | Hitachi, Ltd. | Semiconductor integrated circuit device with vertically stacked conductor interconnections |
JPH1197525A (ja) * | 1997-09-19 | 1999-04-09 | Hitachi Ltd | 半導体装置およびその製造方法 |
US5969421A (en) * | 1997-11-18 | 1999-10-19 | Lucent Technologies Inc. | Integrated circuit conductors that avoid current crowding |
KR100273989B1 (ko) * | 1997-11-25 | 2001-01-15 | 윤종용 | 반도체장치의콘택형성방법 |
US6376896B1 (en) * | 1999-04-08 | 2002-04-23 | Seiko Instruments Inc. | Semiconductor device having thin film resistor and method of manufacturing the same |
JPH11354637A (ja) * | 1998-06-11 | 1999-12-24 | Oki Electric Ind Co Ltd | 配線の接続構造及び配線の接続部の形成方法 |
TW410435B (en) * | 1998-06-30 | 2000-11-01 | United Microelectronics Corp | The metal interconnection manufacture by using the chemical mechanical polishing process |
US6060383A (en) * | 1998-08-10 | 2000-05-09 | Nogami; Takeshi | Method for making multilayered coaxial interconnect structure |
US6249010B1 (en) * | 1998-08-17 | 2001-06-19 | National Semiconductor Corporation | Dielectric-based anti-fuse cell with polysilicon contact plug and method for its manufacture |
KR100267108B1 (ko) * | 1998-09-16 | 2000-10-02 | 윤종용 | 다층배선을구비한반도체소자및그제조방법 |
US6174803B1 (en) | 1998-09-16 | 2001-01-16 | Vsli Technology | Integrated circuit device interconnection techniques |
US6080676A (en) * | 1998-09-17 | 2000-06-27 | Advanced Micro Devices, Inc. | Device and method for etching spacers formed upon an integrated circuit gate conductor |
US6281132B1 (en) | 1998-10-06 | 2001-08-28 | Advanced Micro Devices, Inc. | Device and method for etching nitride spacers formed upon an integrated circuit gate conductor |
US6277726B1 (en) * | 1998-12-09 | 2001-08-21 | National Semiconductor Corporation | Method for decreasing contact resistance of an electrode positioned inside a misaligned via for multilevel interconnects |
US6078100A (en) * | 1999-01-13 | 2000-06-20 | Micron Technology, Inc. | Utilization of die repattern layers for die internal connections |
JP3376965B2 (ja) * | 1999-07-13 | 2003-02-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6180508B1 (en) * | 1999-09-02 | 2001-01-30 | Micron Technology, Inc. | Methods of fabricating buried digit lines and semiconductor devices including same |
JP2001094094A (ja) | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
US6713378B2 (en) * | 2000-06-16 | 2004-03-30 | Micron Technology, Inc. | Interconnect line selectively isolated from an underlying contact plug |
US6503827B1 (en) * | 2000-06-28 | 2003-01-07 | International Business Machines Corporation | Method of reducing planarization defects |
US6545330B1 (en) * | 2000-07-12 | 2003-04-08 | International Business Machines Corporation | On chip alpha-particle detector |
US6413846B1 (en) * | 2000-11-14 | 2002-07-02 | Advanced Micro Devices, Inc. | Contact each methodology and integration scheme |
US6383920B1 (en) | 2001-01-10 | 2002-05-07 | International Business Machines Corporation | Process of enclosing via for improved reliability in dual damascene interconnects |
JP2002252281A (ja) * | 2001-02-27 | 2002-09-06 | Sony Corp | 半導体装置およびその製造方法 |
US7087997B2 (en) * | 2001-03-12 | 2006-08-08 | International Business Machines Corporation | Copper to aluminum interlayer interconnect using stud and via liner |
TW548835B (en) | 2001-08-30 | 2003-08-21 | Sony Corp | Semiconductor device and production method thereof |
JP4786836B2 (ja) * | 2001-09-07 | 2011-10-05 | 富士通セミコンダクター株式会社 | 配線接続部設計方法及び半導体装置 |
US6743643B2 (en) * | 2001-11-29 | 2004-06-01 | Symetrix Corporation | Stacked memory cell having diffusion barriers |
JP4103497B2 (ja) * | 2002-04-18 | 2008-06-18 | ソニー株式会社 | 記憶装置とその製造方法および使用方法、半導体装置とその製造方法 |
JP2003332426A (ja) * | 2002-05-17 | 2003-11-21 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
US6780762B2 (en) * | 2002-08-29 | 2004-08-24 | Micron Technology, Inc. | Self-aligned, integrated circuit contact and formation method |
DE10241154A1 (de) * | 2002-09-05 | 2004-03-11 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Zwischenmaterialien und zugehörige Komponenten |
KR100467783B1 (ko) * | 2002-12-20 | 2005-01-25 | 동부아남반도체 주식회사 | 반도체 소자의 금속배선 형성방법 |
US6841466B1 (en) * | 2003-09-26 | 2005-01-11 | Taiwan Semiconductor Manufacturing Company | Method of selectively making copper using plating technology |
US7332805B2 (en) * | 2004-01-06 | 2008-02-19 | International Business Machines Corporation | Electronic package with improved current carrying capability and method of forming the same |
US7323761B2 (en) * | 2004-11-12 | 2008-01-29 | International Business Machines Corporation | Antifuse structure having an integrated heating element |
US20090032958A1 (en) * | 2007-08-03 | 2009-02-05 | Micron Technology, Inc. | Intermetallic conductors |
KR101398634B1 (ko) * | 2008-07-11 | 2014-05-22 | 삼성전자주식회사 | 배선 구조체 및 이를 채택하는 전자 소자 |
JP5625232B2 (ja) * | 2008-10-23 | 2014-11-19 | 日本電気株式会社 | 熱型赤外線固体撮像素子 |
KR20100053063A (ko) * | 2008-11-12 | 2010-05-20 | 주식회사 동부하이텍 | 이미지센서의 제조방법 |
JP2011014728A (ja) * | 2009-07-02 | 2011-01-20 | Casio Computer Co Ltd | 半導体装置及び半導体装置の製造方法 |
KR20120067525A (ko) * | 2010-12-16 | 2012-06-26 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
US8426306B1 (en) | 2010-12-31 | 2013-04-23 | Crossbar, Inc. | Three dimension programmable resistive random accessed memory array with shared bitline and method |
AR097584A1 (es) | 2013-09-12 | 2016-03-23 | Hoffmann La Roche | Terapia de combinación de anticuerpos contra el csf-1r humano y anticuerpos contra el pd-l1 humano |
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US4410622A (en) * | 1978-12-29 | 1983-10-18 | International Business Machines Corporation | Forming interconnections for multilevel interconnection metallurgy systems |
JPS59220952A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | 半導体装置の製造方法 |
JPS59107539A (ja) * | 1982-12-13 | 1984-06-21 | Hitachi Ltd | 多層配線の製造方法 |
US4840923A (en) * | 1986-04-30 | 1989-06-20 | International Business Machine Corporation | Simultaneous multiple level interconnection process |
JPS62260340A (ja) * | 1986-05-06 | 1987-11-12 | Toshiba Corp | 半導体装置の製造方法 |
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JPS63127551A (ja) * | 1986-11-17 | 1988-05-31 | Toshiba Corp | 半導体装置の製造方法 |
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JPS63216361A (ja) * | 1987-03-04 | 1988-09-08 | Nec Corp | 多層配線構造 |
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JPH02192756A (ja) * | 1989-01-20 | 1990-07-30 | Nec Kyushu Ltd | 多層配線構造の半導体装置の製造方法 |
JPH02231742A (ja) * | 1989-03-03 | 1990-09-13 | Nec Corp | 半導体装置 |
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-
1994
- 1994-08-25 US US08/295,957 patent/US5571751A/en not_active Expired - Lifetime
-
1995
- 1995-04-24 WO PCT/US1995/005031 patent/WO1995031007A1/en active IP Right Grant
- 1995-04-24 EP EP99116035A patent/EP0955672A3/de not_active Withdrawn
- 1995-04-24 EP EP95917652A patent/EP0707742B1/de not_active Expired - Lifetime
- 1995-04-24 DE DE69527484T patent/DE69527484T2/de not_active Expired - Lifetime
- 1995-06-07 US US08/487,787 patent/US5666007A/en not_active Expired - Lifetime
-
1996
- 1996-01-24 US US08/590,806 patent/US5691572A/en not_active Expired - Lifetime
- 1996-05-01 US US08/641,583 patent/US5798299A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5691572A (en) | 1997-11-25 |
EP0955672A2 (de) | 1999-11-10 |
EP0707742B1 (de) | 2002-07-24 |
EP0707742A1 (de) | 1996-04-24 |
WO1995031007A1 (en) | 1995-11-16 |
EP0955672A3 (de) | 2000-01-12 |
US5666007A (en) | 1997-09-09 |
DE69527484T2 (de) | 2003-04-03 |
US5571751A (en) | 1996-11-05 |
US5798299A (en) | 1998-08-25 |
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