DE69528217D1 - Vorrichtung und Verfahren zur Bearbeitung von Substraten - Google Patents

Vorrichtung und Verfahren zur Bearbeitung von Substraten

Info

Publication number
DE69528217D1
DE69528217D1 DE69528217T DE69528217T DE69528217D1 DE 69528217 D1 DE69528217 D1 DE 69528217D1 DE 69528217 T DE69528217 T DE 69528217T DE 69528217 T DE69528217 T DE 69528217T DE 69528217 D1 DE69528217 D1 DE 69528217D1
Authority
DE
Germany
Prior art keywords
processing substrates
substrates
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69528217T
Other languages
English (en)
Other versions
DE69528217T2 (de
Inventor
Lawrence Chung-Lai Lei
Cissy S Leung
Eric A Englhardt
Ashok K Sinha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69528217D1 publication Critical patent/DE69528217D1/de
Publication of DE69528217T2 publication Critical patent/DE69528217T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
DE69528217T 1994-06-20 1995-06-15 Vorrichtung und Verfahren zur Bearbeitung von Substraten Expired - Fee Related DE69528217T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/263,617 US5476548A (en) 1994-06-20 1994-06-20 Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring

Publications (2)

Publication Number Publication Date
DE69528217D1 true DE69528217D1 (de) 2002-10-24
DE69528217T2 DE69528217T2 (de) 2003-04-30

Family

ID=23002524

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528217T Expired - Fee Related DE69528217T2 (de) 1994-06-20 1995-06-15 Vorrichtung und Verfahren zur Bearbeitung von Substraten

Country Status (5)

Country Link
US (1) US5476548A (de)
EP (1) EP0688888B1 (de)
JP (2) JP3963966B2 (de)
KR (1) KR960002527A (de)
DE (1) DE69528217T2 (de)

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US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
US5888304A (en) * 1996-04-02 1999-03-30 Applied Materials, Inc. Heater with shadow ring and purge above wafer surface
US5766365A (en) * 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US6033480A (en) * 1994-02-23 2000-03-07 Applied Materials, Inc. Wafer edge deposition elimination
US5590239A (en) * 1994-06-06 1996-12-31 Motorola Planar uniform heating surface with additional circumscribing ring
US5705080A (en) * 1994-07-06 1998-01-06 Applied Materials, Inc. Plasma-inert cover and plasma cleaning process
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JPH08302474A (ja) * 1995-04-28 1996-11-19 Anelva Corp Ｃｖｄ装置の加熱装置
US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
US5772773A (en) * 1996-05-20 1998-06-30 Applied Materials, Inc. Co-axial motorized wafer lift
US5866067A (en) * 1997-03-24 1999-02-02 Sony Corporation And Materials Research Corporation High purity chromium metal by casting with controlled oxygen content
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
FR2763964B1 (fr) * 1997-05-28 1999-08-13 Sgs Thomson Microelectronics Amelioration du flux gazeux dans un reacteur d'epitaxie
US6063440A (en) * 1997-07-11 2000-05-16 Applied Materials, Inc. Method for aligning a wafer
US5985033A (en) * 1997-07-11 1999-11-16 Applied Materials, Inc. Apparatus and method for delivering a gas
US6296712B1 (en) 1997-12-02 2001-10-02 Applied Materials, Inc. Chemical vapor deposition hardware and process
US6210483B1 (en) 1997-12-02 2001-04-03 Applied Materials, Inc. Anti-notch thinning heater
US5955381A (en) * 1998-03-03 1999-09-21 Lucent Technologies Inc. Integrated circuit fabrication
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6323129B1 (en) * 1999-04-02 2001-11-27 National Semiconductor Corporation Process for maintaining a semiconductor substrate layer deposition equipment chamber in a preconditioned and low particulate state
US6423949B1 (en) * 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US6176931B1 (en) 1999-10-29 2001-01-23 International Business Machines Corporation Wafer clamp ring for use in an ionized physical vapor deposition apparatus
US6589352B1 (en) * 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US6494955B1 (en) 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
US6350320B1 (en) * 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
US6488565B1 (en) 2000-08-29 2002-12-03 Applied Materials, Inc. Apparatus for chemical mechanical planarization having nested load cups
JP4583591B2 (ja) * 2000-12-15 2010-11-17 東京エレクトロン株式会社 処理方法及び処理装置
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6795292B2 (en) 2001-05-15 2004-09-21 Dennis Grimard Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US7582186B2 (en) * 2002-12-20 2009-09-01 Tokyo Electron Limited Method and apparatus for an improved focus ring in a plasma processing system
US20040244949A1 (en) * 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
EP1719167B1 (de) * 2004-02-13 2011-10-26 ASM America, Inc. Substrathaltesystem zur reduzierten autodotierung und rückseiten-ablagerung
US8372203B2 (en) * 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
US7691204B2 (en) * 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
US9917001B2 (en) * 2008-01-21 2018-03-13 Applied Materials, Inc. High temperature fine grain aluminum heater
JP2009277720A (ja) * 2008-05-12 2009-11-26 Nec Electronics Corp 半導体装置の製造方法及びエッチング装置
US8449679B2 (en) 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US8753447B2 (en) * 2009-06-10 2014-06-17 Novellus Systems, Inc. Heat shield for heater in semiconductor processing apparatus
WO2011082020A2 (en) 2009-12-31 2011-07-07 Applied Materials, Inc. Shadow ring for modifying wafer edge and bevel deposition
WO2011094230A2 (en) 2010-01-27 2011-08-04 Applied Materials, Inc. Life enhancement of ring assembly in semiconductor manufacturing chambers
JP6056403B2 (ja) * 2012-11-15 2017-01-11 東京エレクトロン株式会社 成膜装置
US9997381B2 (en) * 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
JP6024921B2 (ja) * 2013-11-01 2016-11-16 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
ITCO20130058A1 (it) * 2013-11-11 2015-05-12 Lpe Spa Suscettore con lavorazioni di forma arcuata nella superficie d'appoggio dei substrati
ITCO20130072A1 (it) * 2013-12-19 2015-06-20 Lpe Spa Suscettore con lavorazioni curve e concentriche nella superficie d'appoggio dei substrati
US10903055B2 (en) * 2015-04-17 2021-01-26 Applied Materials, Inc. Edge ring for bevel polymer reduction
TWI734770B (zh) * 2016-04-24 2021-08-01 美商應用材料股份有限公司 用於防止空間ald處理腔室中之背側沉積的設備
US10147610B1 (en) 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery
US11330673B2 (en) 2017-11-20 2022-05-10 Applied Materials, Inc. Heated substrate support
KR20210030074A (ko) * 2019-09-09 2021-03-17 삼성전자주식회사 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치

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US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
JPH04226027A (ja) * 1990-04-23 1992-08-14 Genus Inc ガス阻止装置を有するウエファ周辺封止装置
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
WO1993013241A1 (en) * 1991-12-23 1993-07-08 Genus, Inc. Purge gas in wafer coating area selection
US5328722A (en) * 1992-11-06 1994-07-12 Applied Materials, Inc. Metal chemical vapor deposition process using a shadow ring
US5292554A (en) * 1992-11-12 1994-03-08 Applied Materials, Inc. Deposition apparatus using a perforated pumping plate
US5326725A (en) * 1993-03-11 1994-07-05 Applied Materials, Inc. Clamping ring and susceptor therefor
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
EP0628644B1 (de) * 1993-05-27 2003-04-02 Applied Materials, Inc. Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
DE69401863T2 (de) * 1993-07-15 1997-07-03 Applied Materials Inc Verbesserte Suszeptor Ausführung
EP0746874A1 (de) * 1994-02-23 1996-12-11 Applied Materials, Inc. Cvd-klammer

Also Published As

Publication number Publication date
JP4563984B2 (ja) 2010-10-20
EP0688888A2 (de) 1995-12-27
DE69528217T2 (de) 2003-04-30
JP2007113119A (ja) 2007-05-10
US5476548A (en) 1995-12-19
EP0688888B1 (de) 2002-09-18
KR960002527A (ko) 1996-01-26
JP3963966B2 (ja) 2007-08-22
EP0688888A3 (de) 1998-02-04
JPH0881775A (ja) 1996-03-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee