DE69528803D1 - Verfahren zur Herstellung von eng benachbarten Metallelektroden auf einer Halbleiter-Anordnung - Google Patents

Verfahren zur Herstellung von eng benachbarten Metallelektroden auf einer Halbleiter-Anordnung

Info

Publication number
DE69528803D1
DE69528803D1 DE69528803T DE69528803T DE69528803D1 DE 69528803 D1 DE69528803 D1 DE 69528803D1 DE 69528803 T DE69528803 T DE 69528803T DE 69528803 T DE69528803 T DE 69528803T DE 69528803 D1 DE69528803 D1 DE 69528803D1
Authority
DE
Germany
Prior art keywords
production
closely adjacent
metal electrodes
adjacent metal
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69528803T
Other languages
English (en)
Other versions
DE69528803T2 (de
Inventor
Michael D Lammert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of DE69528803D1 publication Critical patent/DE69528803D1/de
Application granted granted Critical
Publication of DE69528803T2 publication Critical patent/DE69528803T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
DE69528803T 1994-09-27 1995-07-13 Verfahren zur Herstellung von eng benachbarten Metallelektroden auf einer Halbleiter-Anordnung Expired - Fee Related DE69528803T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/312,845 US5486483A (en) 1994-09-27 1994-09-27 Method of forming closely spaced metal electrodes in a semiconductor device

Publications (2)

Publication Number Publication Date
DE69528803D1 true DE69528803D1 (de) 2002-12-19
DE69528803T2 DE69528803T2 (de) 2003-03-20

Family

ID=23213270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528803T Expired - Fee Related DE69528803T2 (de) 1994-09-27 1995-07-13 Verfahren zur Herstellung von eng benachbarten Metallelektroden auf einer Halbleiter-Anordnung

Country Status (7)

Country Link
US (1) US5486483A (de)
EP (1) EP0704882B1 (de)
JP (1) JP2702687B2 (de)
KR (1) KR0184621B1 (de)
DE (1) DE69528803T2 (de)
SG (1) SG63527A1 (de)
TW (1) TW289151B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172102A (ja) * 1994-12-20 1996-07-02 Murata Mfg Co Ltd 半導体装置の製造方法
JP3360461B2 (ja) * 1995-01-31 2002-12-24 ソニー株式会社 メタル成膜工程の前処理方法
JPH08321486A (ja) * 1995-05-24 1996-12-03 Sony Corp 金属膜のパターン形成方法
US5804487A (en) * 1996-07-10 1998-09-08 Trw Inc. Method of fabricating high βHBT devices
KR100262940B1 (ko) * 1998-05-29 2000-09-01 이계철 절연막 리프트 오프를 이용한 화합물 반도체 소자 제조 방법
US6540524B1 (en) * 2000-02-14 2003-04-01 Advantest Corp. Contact structure and production method thereof
US6504223B1 (en) * 1998-11-30 2003-01-07 Advantest Corp. Contact structure and production method thereof and probe contact assembly using same
US6297164B1 (en) * 1998-11-30 2001-10-02 Advantest Corp. Method for producing contact structures
US6406965B1 (en) 2001-04-19 2002-06-18 Trw Inc. Method of fabricating HBT devices
US7067898B1 (en) 2004-05-25 2006-06-27 Hrl Laboratories, Llc Semiconductor device having a self-aligned base contact and narrow emitter
US7368764B1 (en) 2005-04-18 2008-05-06 Hrl Laboratories, Llc Heterojunction bipolar transistor and method to make a heterojunction bipolar transistor
US8319344B2 (en) 2008-07-14 2012-11-27 Infineon Technologies Ag Electrical device with protruding contact elements and overhang regions over a cavity
US20110284983A1 (en) * 2010-05-21 2011-11-24 Solapoint Corporation Photodiode device and manufacturing method thereof
US9728444B2 (en) * 2015-12-31 2017-08-08 International Business Machines Corporation Reactive ion etching assisted lift-off processes for fabricating thick metallization patterns with tight pitch

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US4325181A (en) * 1980-12-17 1982-04-20 The United States Of America As Represented By The Secretary Of The Navy Simplified fabrication method for high-performance FET
US4700462A (en) * 1986-10-08 1987-10-20 Hughes Aircraft Company Process for making a T-gated transistor
US5093280A (en) * 1987-10-13 1992-03-03 Northrop Corporation Refractory metal ohmic contacts and method
US4818712A (en) * 1987-10-13 1989-04-04 Northrop Corporation Aluminum liftoff masking process and product
EP0312965B1 (de) * 1987-10-23 1992-12-30 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren selbstjustierten Heterobipolartransistors
FR2625612B1 (fr) * 1987-12-30 1990-05-04 Labo Electronique Physique Procede de realisation d'un dispositif semiconducteur du type transistor bipolaire a heterojonction
US5223454A (en) * 1988-01-29 1993-06-29 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
JPH0249416A (ja) * 1988-08-10 1990-02-19 Sanyo Electric Co Ltd 微細パターンの形成方法
KR910005400B1 (ko) * 1988-09-05 1991-07-29 재단법인 한국전자통신연구소 다층레지스트를 이용한 자기정합형 갈륨비소 전계효과트랜지스터의 제조방법
US4959326A (en) * 1988-12-22 1990-09-25 Siemens Aktiengesellschaft Fabricating T-gate MESFETS employing double exposure, double develop techniques
US4996165A (en) * 1989-04-21 1991-02-26 Rockwell International Corporation Self-aligned dielectric assisted planarization process
JPH0355852A (ja) * 1989-07-25 1991-03-11 Sony Corp 半導体装置の製造方法
US5053348A (en) * 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
US5179032A (en) * 1990-02-01 1993-01-12 Quigg Fred L Mosfet structure having reduced capacitance and method of forming same
FR2658362A1 (fr) * 1990-02-09 1991-08-16 Philips Electronique Lab Procede de realisation par autoalignement, d'un dispositif semiconducteur integre, comprenant au moins la formation d'un premier contact d'electrode encapsule et muni d'espaceurs et d'un second contact d'electrode autoaligne sur celui-ci.
FR2663155B1 (fr) * 1990-06-12 1997-01-24 Thomson Composants Microondes Procede de realisation d'une grille de transistor.
US5185278A (en) * 1990-10-22 1993-02-09 Motorola, Inc. Method of making self-aligned gate providing improved breakdown voltage
JPH04223342A (ja) * 1990-12-26 1992-08-13 Mitsubishi Electric Corp 半導体装置のゲート電極とその製造方法
US5334542A (en) * 1991-11-27 1994-08-02 Oki Electric Industry Co., Ltd. Method of forming T-shaped electrode
US5256580A (en) * 1992-04-06 1993-10-26 Motorola, Inc. Method of forming a light emitting diode
US5304511A (en) * 1992-09-29 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Production method of T-shaped gate electrode in semiconductor device
US5288660A (en) * 1993-02-01 1994-02-22 Avantek, Inc. Method for forming self-aligned t-shaped transistor electrode

Also Published As

Publication number Publication date
US5486483A (en) 1996-01-23
KR0184621B1 (ko) 1999-04-15
DE69528803T2 (de) 2003-03-20
EP0704882B1 (de) 2002-11-13
TW289151B (de) 1996-10-21
JP2702687B2 (ja) 1998-01-21
EP0704882A3 (de) 1998-01-07
EP0704882A2 (de) 1996-04-03
KR960012328A (ko) 1996-04-20
JPH08111389A (ja) 1996-04-30
SG63527A1 (en) 1999-03-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NORTHROP GRUMMAN CORP. (N.D.GES.D.STAATES DELAWARE

8339 Ceased/non-payment of the annual fee