DE69529018D1 - Poröses Dielektrikum auf Halbleiterbauelementen und Verfahren zur dessen Herstellung - Google Patents

Poröses Dielektrikum auf Halbleiterbauelementen und Verfahren zur dessen Herstellung

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Publication number
DE69529018D1
DE69529018D1 DE69529018T DE69529018T DE69529018D1 DE 69529018 D1 DE69529018 D1 DE 69529018D1 DE 69529018 T DE69529018 T DE 69529018T DE 69529018 T DE69529018 T DE 69529018T DE 69529018 D1 DE69529018 D1 DE 69529018D1
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DE
Germany
Prior art keywords
production
semiconductor components
porous dielectric
porous
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69529018T
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English (en)
Other versions
DE69529018T2 (de
Inventor
Bruce E Gnade
Chih-Chen Cho
M Smith
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Texas Instruments Inc
Original Assignee
Texas Instruments Inc
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Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
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Publication of DE69529018D1 publication Critical patent/DE69529018D1/de
Publication of DE69529018T2 publication Critical patent/DE69529018T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
    • H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69529018T 1994-06-07 1995-06-07 Poröses Dielektrikum auf Halbleiterbauelementen und Verfahren zur dessen Herstellung Expired - Fee Related DE69529018T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/255,157 US5494858A (en) 1994-06-07 1994-06-07 Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications

Publications (2)

Publication Number Publication Date
DE69529018D1 true DE69529018D1 (de) 2003-01-16
DE69529018T2 DE69529018T2 (de) 2003-10-09

Family

ID=22967092

Family Applications (1)

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DE69529018T Expired - Fee Related DE69529018T2 (de) 1994-06-07 1995-06-07 Poröses Dielektrikum auf Halbleiterbauelementen und Verfahren zur dessen Herstellung

Country Status (4)

Country Link
US (2) US5494858A (de)
EP (1) EP0687004B1 (de)
JP (1) JPH0859362A (de)
DE (1) DE69529018T2 (de)

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5504042A (en) * 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5472913A (en) * 1994-08-05 1995-12-05 Texas Instruments Incorporated Method of fabricating porous dielectric material with a passivation layer for electronics applications
US5658832A (en) * 1994-10-17 1997-08-19 Regents Of The University Of California Method of forming a spacer for field emission flat panel displays
US5627082A (en) * 1995-03-29 1997-05-06 Texas Instruments Incorporated High thermal resistance backfill material for hybrid UFPA's
US5753305A (en) * 1995-11-16 1998-05-19 Texas Instruments Incorporated Rapid aging technique for aerogel thin films
US5807607A (en) * 1995-11-16 1998-09-15 Texas Instruments Incorporated Polyol-based method for forming thin film aerogels on semiconductor substrates
US6319852B1 (en) 1995-11-16 2001-11-20 Texas Instruments Incorporated Nanoporous dielectric thin film formation using a post-deposition catalyst
US6130152A (en) * 1995-11-16 2000-10-10 Texas Instruments Incorporated Aerogel thin film formation from multi-solvent systems
US6037277A (en) * 1995-11-16 2000-03-14 Texas Instruments Incorporated Limited-volume apparatus and method for forming thin film aerogels on semiconductor substrates
US5736425A (en) * 1995-11-16 1998-04-07 Texas Instruments Incorporated Glycol-based method for forming a thin-film nanoporous dielectric
US5955140A (en) * 1995-11-16 1999-09-21 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US6380105B1 (en) 1996-11-14 2002-04-30 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
JPH09219448A (ja) * 1996-02-09 1997-08-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5965202A (en) * 1996-05-02 1999-10-12 Lucent Technologies, Inc. Hybrid inorganic-organic composite for use as an interlayer dielectric
US5922299A (en) 1996-11-26 1999-07-13 Battelle Memorial Institute Mesoporous-silica films, fibers, and powders by evaporation
DE19648798C2 (de) * 1996-11-26 1998-11-19 Hoechst Ag Verfahren zur Herstellung von organisch modifizierten Aerogelen durch Oberflächenmodifikation des wäßrigen Gels (ohne vorherigen Lösungsmitteltausch) und anschließender Trocknung
KR19980064176A (ko) * 1996-12-17 1998-10-07 윌리엄비.켐플러 집적 회로 유전체
US6455130B1 (en) * 1997-04-17 2002-09-24 Alliedsignal Inc. Nanoporous dielectric films with graded density and process for making such films
EP0976153A1 (de) * 1997-04-17 2000-02-02 AlliedSignal Inc. Nanoporöse dielektrische schichten mit dichtgradient und verfahren zu ihre herstellung
US6670022B1 (en) 1997-04-17 2003-12-30 Honeywell International, Inc. Nanoporous dielectric films with graded density and process for making such films
US6048804A (en) * 1997-04-29 2000-04-11 Alliedsignal Inc. Process for producing nanoporous silica thin films
DE19718741A1 (de) 1997-05-02 1998-11-05 Hoechst Ag Verfahren zur Kompaktierung von Aerogelen
DE19718740A1 (de) 1997-05-02 1998-11-05 Hoechst Ag Verfahren zur Granulierung von Aerogelen
US6800928B1 (en) * 1997-05-28 2004-10-05 Texas Instruments Incorporated Porous integrated circuit dielectric with decreased surface porosity
JPH113888A (ja) * 1997-05-28 1999-01-06 Texas Instr Inc <Ti> 集積回路誘電体及び方法
EP0881668A3 (de) 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Abscheidung eines elektrisch isolierenden Dünnfilms mit einer niedrigen Dielektrizitätskonstante
JP3173426B2 (ja) * 1997-06-09 2001-06-04 日本電気株式会社 シリカ絶縁膜の製造方法及び半導体装置の製造方法
JPH1140558A (ja) * 1997-07-22 1999-02-12 Sony Corp 誘電体膜の製造方法
US5801092A (en) * 1997-09-04 1998-09-01 Ayers; Michael R. Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices
US6858526B2 (en) * 1998-07-14 2005-02-22 Micron Technology, Inc. Methods of forming materials between conductive electrical components, and insulating materials
US6333556B1 (en) 1997-10-09 2001-12-25 Micron Technology, Inc. Insulating materials
US6251470B1 (en) 1997-10-09 2001-06-26 Micron Technology, Inc. Methods of forming insulating materials, and methods of forming insulating materials around a conductive component
US6350704B1 (en) 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
EP0917199A3 (de) * 1997-11-17 2001-04-11 Texas Instruments Incorporated Verbesserungen in oder in Bezug auf Halbleiteranordnungen
US6248168B1 (en) 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
DE19756633A1 (de) 1997-12-19 1999-06-24 Hoechst Ag Verfahren zur unterkritischen Trocknung von Lyogelen zu Aerogelen
KR100524204B1 (ko) 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 가스 처리장치
DE19801004A1 (de) * 1998-01-14 1999-07-15 Cabot Corp Verfahren zur Herstellung von im wesentlichen kugelförmigen Lyogelen in wasserunlöslichen Silylierungsmitteln
US6479374B1 (en) * 1998-04-01 2002-11-12 Asahi Kasei Kabushiki Kaisha Method of manufacturing interconnection structural body
US6149987A (en) * 1998-04-07 2000-11-21 Applied Materials, Inc. Method for depositing low dielectric constant oxide films
DE59811774D1 (de) 1998-06-05 2004-09-09 Cabot Corp Nanoporöse interpenetrierende organisch-anorganische netzwerke
US6140221A (en) * 1998-07-29 2000-10-31 Philips Electronics North America Corp. Method for forming vias through porous dielectric material and devices formed thereby
EP1118110A1 (de) * 1998-08-27 2001-07-25 AlliedSignal Inc. Optimierungsverfahren der mechanischen festigkeit einer nanoporösen silikatschicht
US6614097B1 (en) 1998-09-30 2003-09-02 Lsi Logic Corporation Method for composing a dielectric layer within an interconnect structure of a multilayer semiconductor device
TW429576B (en) * 1998-10-14 2001-04-11 United Microelectronics Corp Manufacturing method for metal interconnect
US6472335B1 (en) 1998-10-19 2002-10-29 Taiwan Semiconductor Manufacturing Company Methods of adhesion promoter between low-K layer and underlying insulating layer
US6617772B1 (en) 1998-12-11 2003-09-09 Candescent Technologies Corporation Flat-panel display having spacer with rough face for inhibiting secondary electron escape
US6403209B1 (en) * 1998-12-11 2002-06-11 Candescent Technologies Corporation Constitution and fabrication of flat-panel display and porous-faced structure suitable for partial or full use in spacer of flat-panel display
US6090724A (en) * 1998-12-15 2000-07-18 Lsi Logic Corporation Method for composing a thermally conductive thin film having a low dielectric property
US6383466B1 (en) 1998-12-28 2002-05-07 Battelle Memorial Institute Method of dehydroxylating a hydroxylated material and method of making a mesoporous film
US6329017B1 (en) 1998-12-23 2001-12-11 Battelle Memorial Institute Mesoporous silica film from a solution containing a surfactant and methods of making same
US6413882B1 (en) 1999-04-14 2002-07-02 Alliedsignal Inc. Low dielectric foam dielectric formed from polymer decomposition
US6204202B1 (en) 1999-04-14 2001-03-20 Alliedsignal, Inc. Low dielectric constant porous films
US6287987B1 (en) 1999-04-30 2001-09-11 Lsi Logic Corporation Method and apparatus for deposition of porous silica dielectrics
US6251788B1 (en) * 1999-05-03 2001-06-26 Winbond Electronics Corp. Method of integrated circuit polishing without dishing effects
US6350679B1 (en) * 1999-08-03 2002-02-26 Micron Technology, Inc. Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry
US6413854B1 (en) 1999-08-24 2002-07-02 International Business Machines Corp. Method to build multi level structure
US6528153B1 (en) 1999-09-30 2003-03-04 Novellus Systems, Inc. Low dielectric constant porous materials having improved mechanical strength
US20040089238A1 (en) * 1999-10-04 2004-05-13 Jerome Birnbaum Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica
US6541863B1 (en) * 2000-01-05 2003-04-01 Advanced Micro Devices, Inc. Semiconductor device having a reduced signal processing time and a method of fabricating the same
US6329062B1 (en) 2000-02-29 2001-12-11 Novellus Systems, Inc. Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits
US6465365B1 (en) 2000-04-07 2002-10-15 Koninklijke Philips Electronics N.V. Method of improving adhesion of cap oxide to nanoporous silica for integrated circuit fabrication
EP1172847A3 (de) * 2000-07-10 2004-07-28 Interuniversitair Micro-Elektronica Centrum Vzw Methode, eine poröse Siliziumoxidschicht herzustellen
US6753270B1 (en) 2000-08-04 2004-06-22 Applied Materials Inc. Process for depositing a porous, low dielectric constant silicon oxide film
US6512292B1 (en) 2000-09-12 2003-01-28 International Business Machines Corporation Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces
DE10059935A1 (de) * 2000-11-28 2002-06-06 Infineon Technologies Ag Dicht gepackte Halbleiterstruktur und Verfahren zum Herstellen einer solchen
US6432811B1 (en) * 2000-12-20 2002-08-13 Intel Corporation Method of forming structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures
US6533855B1 (en) 2001-02-13 2003-03-18 Novellus Systems, Inc. Dispersions of silicalite and zeolite nanoparticles in nonpolar solvents
DE10109877A1 (de) * 2001-03-01 2002-09-19 Infineon Technologies Ag Leiterbahnanordnung und Verfahren zur Herstellung einer Leiterbahnanordnung
US6780499B2 (en) * 2001-05-03 2004-08-24 International Business Machines Corporation Ordered two-phase dielectric film, and semiconductor device containing the same
JP4953523B2 (ja) * 2001-06-29 2012-06-13 ローム株式会社 半導体装置およびその製造方法
US6963137B2 (en) 2001-07-18 2005-11-08 Trikon Holdings Limited Low dielectric constant layers
JP2005510082A (ja) * 2001-11-16 2005-04-14 トリコン ホールディングス リミティド 低ｋ誘電層の形成
US8042771B2 (en) 2007-05-25 2011-10-25 Karl F. Milde, Jr. Method and apparatus for treating fuel to temporarily reduce its combustibility
US7222821B2 (en) * 2001-11-21 2007-05-29 Matos Jeffrey A Method and apparatus for treating fuel to temporarily reduce its combustibility
US20030218253A1 (en) * 2001-12-13 2003-11-27 Avanzino Steven C. Process for formation of a wiring network using a porous interlevel dielectric and related structures
US7196422B2 (en) * 2001-12-14 2007-03-27 Intel Corporation Low-dielectric constant structure with a multilayer stack of thin films with pores
JP2006500769A (ja) * 2002-09-20 2006-01-05 ハネウェル・インターナショナル・インコーポレーテッド 低ｋ材料用の中間層接着促進剤
JP2004146798A (ja) * 2002-09-30 2004-05-20 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US6861274B2 (en) * 2003-03-28 2005-03-01 Intel Corporation Method of making a SDI electroosmotic pump using nanoporous dielectric frit
US20050082526A1 (en) * 2003-10-15 2005-04-21 International Business Machines Corporation Techniques for layer transfer processing
US8263983B2 (en) 2003-10-28 2012-09-11 Semiconductor Energy Laboratory Co., Ltd. Wiring substrate and semiconductor device
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
DE102004031135A1 (de) * 2004-06-28 2006-01-19 Infineon Technologies Ag Resistives Halbleiterelement basierend auf einem Festkörperionenleiter
JP4577715B2 (ja) * 2005-01-05 2010-11-10 株式会社神戸製鋼所 パターン電極を備えた多孔質誘電体基板の製造方法
US20060220251A1 (en) * 2005-03-31 2006-10-05 Grant Kloster Reducing internal film stress in dielectric film
US7425350B2 (en) * 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
JP4657859B2 (ja) * 2005-09-09 2011-03-23 ローム株式会社 多孔質薄膜の製造方法、多孔質薄膜およびこれを用いた半導体装置
US20070173070A1 (en) * 2006-01-26 2007-07-26 Mei-Ling Chen Porous low-k dielectric film and fabrication method thereof
FR2896887B1 (fr) * 2006-02-02 2008-05-30 Essilor Int Article comportant un revetement mesoporeux presentant un profil d'indice de refraction et ses procedes de fabrication
JP4788415B2 (ja) * 2006-03-15 2011-10-05 ソニー株式会社 半導体装置の製造方法
US7947565B2 (en) * 2007-02-07 2011-05-24 United Microelectronics Corp. Forming method of porous low-k layer and interconnect process
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US7718525B2 (en) 2007-06-29 2010-05-18 International Business Machines Corporation Metal interconnect forming methods and IC chip including metal interconnect
US20090026924A1 (en) * 2007-07-23 2009-01-29 Leung Roger Y Methods of making low-refractive index and/or low-k organosilicate coatings
JP5098507B2 (ja) * 2007-08-10 2012-12-12 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
US20090324928A1 (en) * 2008-06-26 2009-12-31 Vijayakumar Ramachandrarao Forming ultra low dielectric constant porous dielectric films and structures formed thereby
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US8593783B2 (en) * 2012-02-16 2013-11-26 Elwha Llc Graphene mounted on aerogel
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US10008382B2 (en) 2015-07-30 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a porous low-k structure
US10382312B2 (en) * 2016-03-02 2019-08-13 Fisher-Rosemount Systems, Inc. Detecting and locating process control communication line faults from a handheld maintenance tool
KR20180030280A (ko) * 2016-09-12 2018-03-22 삼성전자주식회사 배선 구조체를 갖는 반도체 소자
US10822807B2 (en) 2019-02-18 2020-11-03 Royal Building Products (Usa) Inc. Assembly for improved insulation
US11296092B2 (en) * 2020-05-28 2022-04-05 Nanya Technology Corporation Semiconductor device with porous decoupling feature

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551109A (en) * 1978-06-16 1980-01-07 Fujitsu Ltd Manufacture of semiconductor device
US4652467A (en) * 1985-02-25 1987-03-24 The United States Of America As Represented By The United States Department Of Energy Inorganic-polymer-derived dielectric films
JPH0612790B2 (ja) * 1987-02-24 1994-02-16 日本電気株式会社 半導体装置
JPH01235254A (ja) * 1988-03-15 1989-09-20 Nec Corp 半導体装置及びその製造方法
JPH0259452A (ja) * 1988-08-24 1990-02-28 Seiko Epson Corp 多孔質ガラスおよびその製造方法
US4987101A (en) * 1988-12-16 1991-01-22 International Business Machines Corporation Method for providing improved insulation in VLSI and ULSI circuits
JPH03109236A (ja) * 1989-09-22 1991-05-09 Hoya Corp 半導体超微粒子分散ガラスの製造方法
JPH04174541A (ja) * 1990-03-28 1992-06-22 Nec Corp 半導体集積回路及びその製造方法
US5073814A (en) * 1990-07-02 1991-12-17 General Electric Company Multi-sublayer dielectric layers
JPH05339020A (ja) * 1992-06-05 1993-12-21 Fujitsu Ltd 多層セラミック回路基板の製造方法
US5393712A (en) * 1993-06-28 1995-02-28 Lsi Logic Corporation Process for forming low dielectric constant insulation layer on integrated circuit structure

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US5561318A (en) 1996-10-01
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