DE69529378D1 - Verfahren zur Stabilisierung der Ausgangsleistung von höheren harmonischen Wellen und Laserlichtquelle mit kurzer Wellenlänge die dasselbe benutzt - Google Patents

Verfahren zur Stabilisierung der Ausgangsleistung von höheren harmonischen Wellen und Laserlichtquelle mit kurzer Wellenlänge die dasselbe benutzt

Info

Publication number
DE69529378D1
DE69529378D1 DE69529378T DE69529378T DE69529378D1 DE 69529378 D1 DE69529378 D1 DE 69529378D1 DE 69529378 T DE69529378 T DE 69529378T DE 69529378 T DE69529378 T DE 69529378T DE 69529378 D1 DE69529378 D1 DE 69529378D1
Authority
DE
Germany
Prior art keywords
stabilizing
light source
laser light
output power
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69529378T
Other languages
English (en)
Other versions
DE69529378T2 (de
Inventor
Kazuhisa Yamamoto
Kiminori Mizuuchi
Yasuo Kitaoka
Makoto Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69529378D1 publication Critical patent/DE69529378D1/de
Publication of DE69529378T2 publication Critical patent/DE69529378T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3544—Particular phase matching techniques
    • G02F1/3548—Quasi phase matching [QPM], e.g. using a periodic domain inverted structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
DE69529378T 1994-09-14 1995-09-11 Verfahren zur Stabilisierung der Ausgangsleistung von höheren harmonischen Wellen und Laserlichtquelle mit kurzer Wellenlänge die dasselbe benutzt Expired - Lifetime DE69529378T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22013394 1994-09-14
JP27128294 1994-11-04
JP29947694 1994-12-02

Publications (2)

Publication Number Publication Date
DE69529378D1 true DE69529378D1 (de) 2003-02-20
DE69529378T2 DE69529378T2 (de) 2003-10-09

Family

ID=27330405

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69529378T Expired - Lifetime DE69529378T2 (de) 1994-09-14 1995-09-11 Verfahren zur Stabilisierung der Ausgangsleistung von höheren harmonischen Wellen und Laserlichtquelle mit kurzer Wellenlänge die dasselbe benutzt

Country Status (3)

Country Link
US (3) US5936985A (de)
EP (1) EP0703649B1 (de)
DE (1) DE69529378T2 (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69529378T2 (de) * 1994-09-14 2003-10-09 Matsushita Electric Ind Co Ltd Verfahren zur Stabilisierung der Ausgangsleistung von höheren harmonischen Wellen und Laserlichtquelle mit kurzer Wellenlänge die dasselbe benutzt
JPH10506724A (ja) * 1994-10-03 1998-06-30 エスディーエル インク． チューニング可能な青色レーザダイオード
US5960259A (en) * 1995-11-16 1999-09-28 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
US5835650A (en) 1995-11-16 1998-11-10 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6327289B1 (en) * 1997-09-02 2001-12-04 Matsushita Electric Industrial Co., Ltd. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
US6711183B1 (en) * 1998-05-18 2004-03-23 Matsushita Electric Industrial Co., Ltd. Optical wavelength conversion device, coherent light generator, and optical information processing apparatus
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (de) 1999-03-04 2009-12-16 Nichia Corporation Nitridhalbleiterlaserelement
JP2000286498A (ja) * 1999-03-31 2000-10-13 Fuji Photo Film Co Ltd 半導体レーザモジュール、及び半導体レーザモジュールの作成方法
JP2001053379A (ja) * 1999-08-10 2001-02-23 Hitachi Ltd 光送信装置
US6462860B1 (en) * 2000-06-05 2002-10-08 Hrl Laboratories, Llc Method and apparatus of detection of pulse position modulated optical signals
JP2002131795A (ja) * 2000-10-24 2002-05-09 Fuji Photo Film Co Ltd 波長変換素子及びその製造方法
US6845113B2 (en) * 2000-10-31 2005-01-18 Matsushita Electric Industrial Co., Ltd. Coherent light source and recording/reproducing apparatus using the same
DE10102683A1 (de) * 2001-01-22 2002-08-14 Fraunhofer Ges Forschung Vorrichtung zum Vervielfachen von Lichtfrequenzen
US6829080B2 (en) * 2001-04-17 2004-12-07 Matsushita Electric Industrial Co., Ltd. Optical waveguide device and light source and optical apparatus using the same
US6704338B2 (en) * 2001-09-28 2004-03-09 Furukawa Electric Co., Ltd. Semiconductor laser device, semiconductor laser module, and semiconductor laser control method
KR100444912B1 (ko) * 2002-01-21 2004-08-21 광주과학기술원 Ｗｄｍ 광통신 시스템에서 광채널의 파장/광출력 안정화방법 및 그 시스템
US6845186B2 (en) * 2002-03-14 2005-01-18 Nippon Sheet Glass Co., Ltd. Optical circuit with harmonic generator
JP2003295243A (ja) * 2002-04-04 2003-10-15 Canon Inc 高調波光源装置、その駆動方法、およびそれを用いた画像表示装置、画像形成装置、光記録装置
US7120178B2 (en) * 2002-06-15 2006-10-10 Intel Corporation Chip carrier apparatus and method
US7082146B2 (en) * 2002-08-16 2006-07-25 Matsushita Electric Industrial Co., Ltd. Device and method for inspecting wavelength-variable semiconductor laser, and method for inspecting coherent source
JP4545380B2 (ja) * 2003-01-16 2010-09-15 パナソニック株式会社 光導波路デバイスならびにそれを用いたコヒーレント光源およびそれを備えた光学装置
JP4747841B2 (ja) * 2003-10-01 2011-08-17 三菱電機株式会社 波長変換レーザ装置および画像表示装置
US7426223B2 (en) * 2004-04-09 2008-09-16 Matsushita Electric Industrial, Co., Ltd. Coherent light source and optical device
JP2006030542A (ja) * 2004-07-15 2006-02-02 Noritsu Koki Co Ltd 光強度変調素子、強度変調光発生器、レーザ露光装置および写真処理装置
US7436871B2 (en) * 2004-12-03 2008-10-14 Corning Incorporated Method and device for performing wavelength modulation with Distributed Bragg Reflector (DBR) laser
US20060165137A1 (en) * 2005-01-21 2006-07-27 Alexander Kachanov Novel external cavity CW frequency doubling of semiconductor lasers to generate 300-600nm light
GB2429766A (en) * 2005-09-06 2007-03-07 Bookham Technology Plc Light monitoring device
NZ542843A (en) * 2005-10-05 2008-08-29 Pure Depth Ltd Method of manipulating visibility of images on a volumetric display
US7511880B2 (en) * 2005-10-14 2009-03-31 Konica Minolta Opto, Inc. Semiconductor light source module
GB2433644A (en) * 2005-12-22 2007-06-27 Bookham Technology Plc A method of controlling a laser
US7627008B2 (en) * 2006-07-10 2009-12-01 Choong Bum Park Laser apparatus and method for harmonic beam generation
US20080063016A1 (en) * 2006-09-13 2008-03-13 Vikram Bhatia Thermal compensation in semiconductor lasers
US7480317B2 (en) * 2006-09-26 2009-01-20 Corning Incorporated Thermal compensation in semiconductor lasers
WO2008050537A1 (fr) * 2006-10-20 2008-05-02 Ntt Electronics Corporation Dispositif laser à semi-conducteur, et son procédé de commande
TWI306519B (en) * 2006-10-25 2009-02-21 Ind Tech Res Inst Optical-electrical circuit board
US7505492B2 (en) * 2007-05-11 2009-03-17 Corning Incorporated Alignment of lasing wavelength with wavelength conversion peak using modulated wavelength control signal
EP2176930B1 (de) * 2007-07-05 2011-06-22 Philips Intellectual Property & Standards GmbH Oberflächenemittierendes lasergerät mit externem resonator
US7782913B2 (en) * 2007-07-20 2010-08-24 Corning Incorporated Intensity modulation in wavelength converting optical package
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US8204091B2 (en) * 2008-07-03 2012-06-19 Corning Incorporated Wavelength normalization in phase section of semiconductor lasers
JP5362301B2 (ja) * 2008-09-19 2013-12-11 株式会社Ｑｄレーザ レーザシステム
US20100254412A1 (en) * 2009-04-07 2010-10-07 Jacques Gollier Phase Modulation In A Frequency-Converted Laser Source Comprising An External Optical Feedback Component
US8045593B2 (en) * 2009-04-07 2011-10-25 Corning Incorporated Method of controlling a frequency-converted laser source comprising an external optical feedback component
US8102887B2 (en) * 2009-05-26 2012-01-24 Corning Incorporated Edge bonded optical packages
US20110044359A1 (en) * 2009-08-18 2011-02-24 Douglas Llewellyn Butler Intracavity Conversion Utilizing Narrow Band Reflective SOA
US8111452B2 (en) * 2010-02-22 2012-02-07 Corning Incorporated Wavelength conversion device with microlens and optical package incorporating the same
EP3076500B1 (de) * 2013-11-27 2018-10-10 NGK Insulators, Ltd. Lichtemittierende vorrichtung mit externem resonator
JP6715589B2 (ja) * 2015-10-29 2020-07-01 日本ルメンタム株式会社 半導体光素子、アレイ半導体光素子、及び光モジュール
JP7259562B2 (ja) * 2018-07-19 2023-04-18 住友電気工業株式会社 波長可変光源及びその波長制御方法
CN109709072B (zh) * 2018-12-29 2022-08-16 北京信息科技大学 一种液体折射率测量方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117881A (ja) 1984-11-14 1986-06-05 Matsushita Electric Ind Co Ltd 半導体レ−ザ
JPS6286881A (ja) 1985-10-14 1987-04-21 Matsushita Electric Ind Co Ltd 光出力装置
JPS63147387A (ja) 1986-12-10 1988-06-20 Nec Corp 半導体レ−ザ装置
US5063568A (en) * 1988-09-05 1991-11-05 Fujitsu Limited Wavelength stabilized light source
NL8803080A (nl) * 1988-12-16 1990-07-16 Philips Nv Verstembare halfgeleiderdiodelaser met verdeelde reflectie en vervaardigingswijze van een dergelijke halfgeleiderdiodelaser.
JP2546387B2 (ja) * 1989-09-01 1996-10-23 日本電気株式会社 波長可変半導体レーザの駆動方法
JPH0413118A (ja) 1990-05-02 1992-01-17 Olympus Optical Co Ltd 光波長変換器出力安定化装置
US5854870A (en) * 1990-05-25 1998-12-29 Hitachi, Ltd. Short-wavelength laser light source
US5325382A (en) * 1990-09-28 1994-06-28 Nec Corporation Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser
JP2718259B2 (ja) 1990-11-06 1998-02-25 松下電器産業株式会社 短波長レーザ光源
JP2910370B2 (ja) 1991-02-07 1999-06-23 松下電器産業株式会社 光波長変換素子およびそれを用いた短波長レーザ光源
JPH0566440A (ja) * 1991-02-13 1993-03-19 Matsushita Electric Ind Co Ltd レーザ光源
US5315433A (en) * 1991-02-28 1994-05-24 Fuji Photo Film Co., Ltd. Optical wavelength converting apparatus
JPH04324304A (ja) * 1991-04-24 1992-11-13 Yokogawa Electric Corp 光源に３電極波長可変レ−ザダイオ−ドを用いたアブソリュ−ト測長器
JPH04345078A (ja) * 1991-05-22 1992-12-01 Sony Corp レーザ光発生装置
EP0529732B1 (de) * 1991-08-30 1994-11-09 Koninklijke Philips Electronics N.V. Abstimmbarer Laseroszillator
US5559824A (en) * 1992-04-24 1996-09-24 Electro Scientific Industries, Inc. Optical frequency-converting medium pumped by unstable resonator semiconductor laser
JP3052651B2 (ja) * 1992-06-17 2000-06-19 松下電器産業株式会社 短波長光源
US5619369A (en) * 1992-07-16 1997-04-08 Matsushita Electric Industrial Co., Ltd. Diffracting device having distributed bragg reflector and wavelength changing device having optical waveguide with periodically inverted-polarization layers
JPH0651359A (ja) 1992-07-31 1994-02-25 Matsushita Electric Ind Co Ltd 波長変換素子、短波長レーザ装置および波長可変レーザ装置
EP0585758B1 (de) * 1992-08-26 1998-10-14 Sony Corporation Optischer Wellenlängenkonverter
JPH0697602A (ja) 1992-09-14 1994-04-08 Anritsu Corp 分布ブラッグ反射型レーザ
US5384797A (en) * 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array
JPH06175175A (ja) 1992-12-07 1994-06-24 Konica Corp 第二高調波発生装置
US5299212A (en) * 1993-03-10 1994-03-29 At&T Bell Laboratories Article comprising a wavelength-stabilized semiconductor laser
US5434700A (en) * 1993-12-16 1995-07-18 Bell Communications Research, Inc. All-optical wavelength converter
DE69529378T2 (de) * 1994-09-14 2003-10-09 Matsushita Electric Ind Co Ltd Verfahren zur Stabilisierung der Ausgangsleistung von höheren harmonischen Wellen und Laserlichtquelle mit kurzer Wellenlänge die dasselbe benutzt
JPH10506724A (ja) * 1994-10-03 1998-06-30 エスディーエル インク． チューニング可能な青色レーザダイオード

Also Published As

Publication number Publication date
US6496299B2 (en) 2002-12-17
EP0703649B1 (de) 2003-01-15
EP0703649A3 (de) 1996-09-11
US6323990B1 (en) 2001-11-27
US5936985A (en) 1999-08-10
DE69529378T2 (de) 2003-10-09
EP0703649A2 (de) 1996-03-27
US20020126369A1 (en) 2002-09-12

Similar Documents

Publication Publication Date Title
DE69529378D1 (de) Verfahren zur Stabilisierung der Ausgangsleistung von höheren harmonischen Wellen und Laserlichtquelle mit kurzer Wellenlänge die dasselbe benutzt
DE69327175D1 (de) Verfahren und gerät zur stabilisierung der laserdiodenausgangsenergie
DE69304844D1 (de) Vorrichtung zur Leistungsstabilisierung von Laserdioden
DE50013011D1 (de) Verfahren zur Stabilisierung der optischen Ausgangsleistung von Leuchtdioden und Laserdioden
DE69327738T2 (de) Vorrichtung zur Wellenlängenänderung und Laserstrahlerzeugungsgerät
DE69736403D1 (de) Erzeugung von laserlicht mit verschiedenen wellenlängen
DE69736133D1 (de) Direktes hochleistungslaserdiodensystem mit hoher effizienz und zugehörende verfahren
DE69525159D1 (de) Erzeugung von hochfrequenzmodulierter optischer strahlung
NO931850D0 (no) Laser for aa frembringe en optisk baereboelge
DE69308340T2 (de) Frequenzverdoppler und Laserquelle
DE69700230T2 (de) Laserlichtquelle
DE69610499T2 (de) Multi-gigahertz-frequenzmodulation von oberflächenemittierendem laser mit vertikalem resonator
DE69331788D1 (de) Laserstrahlgenerator
DE69425498T2 (de) Laserinterferometrischer kraftwandler
DE69507443D1 (de) Verfahren und Gerät zur Konzentration der Energie von Laserdiodenstrahlen
KR920700095A (ko) 레이저 로봇에 있어서의 레이저광 오조사 방지 방법
DE69409564D1 (de) Halbleiterlaser und Modulationsverfahren
DE69402193T2 (de) Wellenleiterlaser
BR9305879A (pt) Aparelho e processo para controlar a intensidade de saída ótica de um diodo a laser usado em um sistema de comunicação ótica
DE69933017D1 (de) WELLENLÄNGENUMWANDLUNGSKRISTALL, VERFAHREN und Gerät ZUR ERZEUGUNG VON LASERSTRAHLEN
DE59810118D1 (de) Laseroptik sowie Diodenlaser
DE69709519T2 (de) Erzeugung von spline-wellenformen
DE69012357D1 (de) Stromversorgungsschaltung und Verfahren zur Stromversorgung von gepulsten Gaslasern.
DE59505311D1 (de) Stabilisierte multifrequenz-lichtquelle sowie verfahren zur erzeugung von synthetischer lichtwellenlänge
DE69625126D1 (de) Verfahren zur Kontrolle von Excimerlaserausgangsstrahlung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP