DE69529712T2 - Kühlkörper aus synthetischer Diamantschicht - Google Patents

Kühlkörper aus synthetischer Diamantschicht

Info

Publication number
DE69529712T2
DE69529712T2 DE69529712T DE69529712T DE69529712T2 DE 69529712 T2 DE69529712 T2 DE 69529712T2 DE 69529712 T DE69529712 T DE 69529712T DE 69529712 T DE69529712 T DE 69529712T DE 69529712 T2 DE69529712 T2 DE 69529712T2
Authority
DE
Germany
Prior art keywords
heat sink
diamond layer
synthetic diamond
sink made
synthetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69529712T
Other languages
English (en)
Other versions
DE69529712D1 (de
Inventor
Hiromu Shiomi
Hideaki Nakahata
Yoshiki Nishibayashi
Shin-Ichi Shikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69529712D1 publication Critical patent/DE69529712D1/de
Application granted granted Critical
Publication of DE69529712T2 publication Critical patent/DE69529712T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69529712T 1994-08-03 1995-07-27 Kühlkörper aus synthetischer Diamantschicht Expired - Lifetime DE69529712T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18238094 1994-08-03

Publications (2)

Publication Number Publication Date
DE69529712D1 DE69529712D1 (de) 2003-04-03
DE69529712T2 true DE69529712T2 (de) 2003-10-23

Family

ID=16117306

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69529712T Expired - Lifetime DE69529712T2 (de) 1994-08-03 1995-07-27 Kühlkörper aus synthetischer Diamantschicht

Country Status (3)

Country Link
US (2) US5663595A (de)
EP (1) EP0697726B1 (de)
DE (1) DE69529712T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874775A (en) * 1994-08-03 1999-02-23 Sumitomo Electric Industries, Ltd. Diamond heat sink including microchannel therein and methods for manufacturing diamond heat sinks
DE19514548C1 (de) * 1995-04-20 1996-10-02 Daimler Benz Ag Verfahren zur Herstellung einer Mikrokühleinrichtung
JPH10226589A (ja) * 1997-02-14 1998-08-25 Sumitomo Electric Ind Ltd ダイヤモンドヒートシンクの製造方法
DE19732439B4 (de) * 1997-07-28 2006-01-19 Infineon Technologies Ag Leistungshalbleiterbauelement auf Kühlkörper
JP3144387B2 (ja) * 1998-08-17 2001-03-12 日本電気株式会社 半導体装置の製造方法
US6285702B1 (en) * 1999-03-05 2001-09-04 Coherent, Inc. High-power external-cavity optically-pumped semiconductor laser
AU2571600A (en) * 1999-02-18 2000-09-04 Toyo Kohan Co. Ltd. Micro-chip for chemical reaction
US7273598B2 (en) * 2001-01-19 2007-09-25 Chevron U.S.A. Inc. Diamondoid-containing materials for passivating layers in integrated circuit devices
US7306674B2 (en) * 2001-01-19 2007-12-11 Chevron U.S.A. Inc. Nucleation of diamond films using higher diamondoids
US6783589B2 (en) * 2001-01-19 2004-08-31 Chevron U.S.A. Inc. Diamondoid-containing materials in microelectronics
US7528413B2 (en) * 2001-11-09 2009-05-05 Sumitomo Electric Industries, Ltd. Sintered diamond having high thermal conductivity and method for producing the same and heat sink employing it
US20030152773A1 (en) * 2002-02-14 2003-08-14 Chrysler Gregory M. Diamond integrated heat spreader and method of manufacturing same
US6924170B2 (en) * 2003-06-30 2005-08-02 Intel Corporation Diamond-silicon hybrid integrated heat spreader
US7312562B2 (en) * 2004-02-04 2007-12-25 Chevron U.S.A. Inc. Heterodiamondoid-containing field emission devices
WO2007141987A1 (ja) * 2006-06-07 2007-12-13 Mitsubishi Electric Corporation 熱抵抗体ならびにこれを用いた半導体装置および電気装置
JP5273922B2 (ja) * 2006-12-28 2013-08-28 株式会社アライドマテリアル 放熱部材および半導体装置
US8110846B2 (en) * 2007-05-31 2012-02-07 Chien-Min Sung Diamond semiconductor devices and associated methods
US8715875B2 (en) * 2009-05-26 2014-05-06 The Invention Science Fund I, Llc System and method of operating an electrical energy storage device or an electrochemical energy generation device using thermal conductivity materials based on mobile device states and vehicle states
US20100304259A1 (en) * 2009-05-26 2010-12-02 Searete Llc. A Limited Liability Corporation Of The State Of Delaware Method of operating an electrical energy storage device or an electrochemical energy generation device using high thermal conductivity materials during charge and discharge
US9065159B2 (en) * 2009-05-26 2015-06-23 The Invention Science Fund I, Llc System and method of altering temperature of an electrical energy storage device or an electrochemical energy generation device using microchannels
US20100304258A1 (en) * 2009-05-26 2010-12-02 Chan Alistair K System and method of altering temperature of an electrical energy storage device or an electrochemical energy generation device using high thermal conductivity materials
US8101293B2 (en) * 2009-05-26 2012-01-24 The Invention Science Fund I, Llc System for altering temperature of an electrical energy storage device or an electrochemical energy generation device using high thermal conductivity materials based on states of the device
US8802266B2 (en) * 2009-05-26 2014-08-12 The Invention Science Fund I, Llc System for operating an electrical energy storage device or an electrochemical energy generation device using microchannels based on mobile device states and vehicle states
CN109994923A (zh) * 2019-03-26 2019-07-09 中国科学院半导体研究所 温度探测装置及其制作方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1452410A (fr) * 1964-10-29 1966-02-25 Bbc Brown Boveri & Cie éléments de convertisseur statique à semi-conducteurs qui sont placés dans un dispositif de refroidissement
US3872496A (en) * 1973-09-13 1975-03-18 Sperry Rand Corp High frequency diode having simultaneously formed high strength bonds with respect to a diamond heat sink and said diode
JPS60152045A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体装置
JPS61253842A (ja) * 1985-05-02 1986-11-11 Nec Corp Ｉｃチツプキヤリヤ
US5022928A (en) * 1985-10-04 1991-06-11 Buist Richard J Thermoelectric heat pump/power source device
US4806900A (en) * 1986-09-26 1989-02-21 Naoji Fujimori Thermistor and method for producing the same
JP2716122B2 (ja) * 1987-03-09 1998-02-18 日本電気株式会社 アイソレータ内蔵型半導体レーザモジュール
JP2695000B2 (ja) * 1989-04-11 1997-12-24 住友電気工業株式会社 サーミスタ及びその製造方法
JP2761759B2 (ja) * 1989-06-22 1998-06-04 株式会社半導体エネルギー研究所 ダイヤモンド電子装置
JP2799744B2 (ja) * 1989-09-11 1998-09-21 株式会社半導体エネルギー研究所 ダイヤモンドを用いたサーミスタの作製方法
JP2775903B2 (ja) * 1989-10-04 1998-07-16 住友電気工業株式会社 ダイヤモンド半導体素子
JP2730271B2 (ja) * 1990-03-07 1998-03-25 住友電気工業株式会社 半導体装置
JP2961812B2 (ja) * 1990-05-17 1999-10-12 住友電気工業株式会社 半導体装置
US5173761A (en) * 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JP2500208B2 (ja) * 1991-09-06 1996-05-29 住友電気工業株式会社 ヒ―トシンクとその製造方法
WO1993008600A1 (en) * 1991-10-15 1993-04-29 Velox Computer Technology, Inc. Intrinsically controlled cooling container
JPH05299635A (ja) * 1992-04-23 1993-11-12 Kobe Steel Ltd 耐熱性オーミック電極を備えたダイヤモンド薄膜及びその製造方法
US5362975A (en) * 1992-09-02 1994-11-08 Kobe Steel Usa Diamond-based chemical sensors
US5272104A (en) * 1993-03-11 1993-12-21 Harris Corporation Bonded wafer process incorporating diamond insulator
JP3353987B2 (ja) * 1994-01-10 2002-12-09 株式会社半導体エネルギー研究所 素子作製方法
US5391914A (en) * 1994-03-16 1995-02-21 The United States Of America As Represented By The Secretary Of The Navy Diamond multilayer multichip module substrate
JP3024775U (ja) 1995-11-17 1996-05-31 孝子 三角 ハーブ入り香りシート

Also Published As

Publication number Publication date
US5976909A (en) 1999-11-02
DE69529712D1 (de) 2003-04-03
EP0697726A2 (de) 1996-02-21
EP0697726A3 (de) 1996-09-11
EP0697726B1 (de) 2003-02-26
US5663595A (en) 1997-09-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033