DE69601948T2 - Optische resonanzstruktur - Google Patents
Optische resonanzstrukturInfo
- Publication number
- DE69601948T2 DE69601948T2 DE69601948T DE69601948T DE69601948T2 DE 69601948 T2 DE69601948 T2 DE 69601948T2 DE 69601948 T DE69601948 T DE 69601948T DE 69601948 T DE69601948 T DE 69601948T DE 69601948 T2 DE69601948 T2 DE 69601948T2
- Authority
- DE
- Germany
- Prior art keywords
- resonance structure
- optical resonance
- optical
- resonance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
- G02B6/4439—Auxiliary devices
- G02B6/4471—Terminating devices ; Cable clamps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
- H02G15/00—Cable fittings
- H02G15/013—Sealing means for cable inlets
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
- H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
- H02G3/02—Details
- H02G3/08—Distribution boxes; Connection or junction boxes
- H02G3/088—Dustproof, splashproof, drip-proof, waterproof, or flameproof casings or inlets
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
- G02B6/4439—Auxiliary devices
- G02B6/444—Systems or boxes with surplus lengths
- G02B6/4441—Boxes
- G02B6/4446—Cable boxes, e.g. splicing boxes with two or more multi fibre cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S277/00—Seal for a joint or juncture
- Y10S277/904—Viscous seal
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95306917 | 1995-09-29 | ||
PCT/GB1996/002375 WO1997013302A1 (en) | 1995-09-29 | 1996-09-26 | Optically resonant structure |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69601948D1 DE69601948D1 (de) | 1999-05-06 |
DE69601948T2 true DE69601948T2 (de) | 1999-08-05 |
Family
ID=8221347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69601948T Expired - Lifetime DE69601948T2 (de) | 1995-09-29 | 1996-09-26 | Optische resonanzstruktur |
Country Status (8)
Country | Link |
---|---|
US (1) | US6061381A (de) |
EP (1) | EP0852834B1 (de) |
JP (2) | JPH11513534A (de) |
CN (1) | CN1090398C (de) |
AU (1) | AU698782B2 (de) |
CA (1) | CA2231396C (de) |
DE (1) | DE69601948T2 (de) |
WO (1) | WO1997013302A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10234152A1 (de) * | 2001-08-02 | 2003-02-13 | Furukawa Electric Co Ltd | Oberflächenemittierende Lasereinrichtung |
EP2101379A1 (de) | 2008-03-14 | 2009-09-16 | Universität Stuttgart | VCSEL mit monolithisch integrierter Fresnel-Linse |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10353951A1 (de) * | 2003-11-18 | 2005-06-16 | U-L-M Photonics Gmbh | Polarisationskontrolle von Vertikaldiodenlasern durch ein monolothisch integriertes Oberflächengitter |
KR100273134B1 (ko) * | 1997-11-29 | 2001-01-15 | 정선종 | 단일모드표면방출레이저및그제조방법 |
JP3713956B2 (ja) * | 1998-05-29 | 2005-11-09 | 富士ゼロックス株式会社 | 面発光型半導体レーザ素子の製造方法 |
US6327293B1 (en) * | 1998-08-12 | 2001-12-04 | Coherent, Inc. | Optically-pumped external-mirror vertical-cavity semiconductor-laser |
US6195485B1 (en) * | 1998-10-26 | 2001-02-27 | The Regents Of The University Of California | Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector |
US7408964B2 (en) | 2001-12-20 | 2008-08-05 | Finisar Corporation | Vertical cavity surface emitting laser including indium and nitrogen in the active region |
US6922426B2 (en) | 2001-12-20 | 2005-07-26 | Finisar Corporation | Vertical cavity surface emitting laser including indium in the active region |
US7286585B2 (en) * | 1998-12-21 | 2007-10-23 | Finisar Corporation | Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region |
US7257143B2 (en) * | 1998-12-21 | 2007-08-14 | Finisar Corporation | Multicomponent barrier layers in quantum well active regions to enhance confinement and speed |
US6975660B2 (en) | 2001-12-27 | 2005-12-13 | Finisar Corporation | Vertical cavity surface emitting laser including indium and antimony in the active region |
US7058112B2 (en) | 2001-12-27 | 2006-06-06 | Finisar Corporation | Indium free vertical cavity surface emitting laser |
US20030219917A1 (en) * | 1998-12-21 | 2003-11-27 | Johnson Ralph H. | System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers |
US7435660B2 (en) * | 1998-12-21 | 2008-10-14 | Finisar Corporation | Migration enhanced epitaxy fabrication of active regions having quantum wells |
US7095770B2 (en) | 2001-12-20 | 2006-08-22 | Finisar Corporation | Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region |
US7167495B2 (en) * | 1998-12-21 | 2007-01-23 | Finisar Corporation | Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers |
GB2349739A (en) * | 1999-04-12 | 2000-11-08 | Mitel Semiconductor Ab | Vertical cavity surface emitting lasers |
US6339496B1 (en) | 1999-06-22 | 2002-01-15 | University Of Maryland | Cavity-less vertical semiconductor optical amplifier |
US7095767B1 (en) * | 1999-08-30 | 2006-08-22 | Research Investment Network, Inc. | Near field optical apparatus |
US6778582B1 (en) * | 2000-03-06 | 2004-08-17 | Novalux, Inc. | Coupled cavity high power semiconductor laser |
US20060029120A1 (en) * | 2000-03-06 | 2006-02-09 | Novalux Inc. | Coupled cavity high power semiconductor laser |
US6653158B2 (en) * | 2000-08-22 | 2003-11-25 | The Regents Of The University Of California | Double intracavity contacted long-wavelength VCSELs and method of fabricating same |
US6807216B1 (en) | 2000-09-29 | 2004-10-19 | Donald Bennett Hilliard | Circular laser |
GB2379797A (en) * | 2001-09-15 | 2003-03-19 | Zarlink Semiconductor Ab | Surface Emitting Laser |
US6656761B2 (en) * | 2001-11-21 | 2003-12-02 | Motorola, Inc. | Method for forming a semiconductor device for detecting light |
US20030152125A1 (en) * | 2002-02-13 | 2003-08-14 | Junichi Kinoshita | Surface emitting laser and semiconductor light emitting device |
US6888873B2 (en) * | 2002-02-21 | 2005-05-03 | Finisar Corporation | Long wavelength VCSEL bottom mirror |
US7295586B2 (en) * | 2002-02-21 | 2007-11-13 | Finisar Corporation | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs |
US6822995B2 (en) * | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US6778581B1 (en) * | 2002-09-24 | 2004-08-17 | Finisar Corporation | Tunable vertical cavity surface emitting laser |
CA2513214A1 (en) * | 2003-01-24 | 2004-08-12 | California Institute Of Technology | Traverse bragg resonance lasers and amplifiers and method of operating the same |
JP2006005324A (ja) * | 2004-05-19 | 2006-01-05 | Ricoh Co Ltd | 面発光レーザ素子および面発光レーザアレイおよび光インターコネクションシステムおよび光通信システムおよび電子写真システムおよび光ディスクシステム |
US7542499B2 (en) | 2003-11-27 | 2009-06-02 | Ricoh Company, Ltd. | Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system |
US7072376B2 (en) * | 2004-09-16 | 2006-07-04 | Corning Incorporated | Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom |
US7508965B2 (en) * | 2004-06-01 | 2009-03-24 | Lumidigm, Inc. | System and method for robust fingerprint acquisition |
US6956246B1 (en) * | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
US7322704B2 (en) * | 2004-07-30 | 2008-01-29 | Novalux, Inc. | Frequency stabilized vertical extended cavity surface emitting lasers |
US7860137B2 (en) * | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
CA2581614A1 (en) * | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
US7412144B2 (en) * | 2005-07-22 | 2008-08-12 | The United States Of America As Represented By The Secretary Of The Army | Photonic crystal-based optical waveguide modulator |
US20070242715A1 (en) * | 2006-04-18 | 2007-10-18 | Johan Gustavsson | Mode and polarization control in vcsels using sub-wavelength structure |
CN101093931B (zh) * | 2006-06-22 | 2010-11-24 | 中国科学院半导体研究所 | 集成泵浦光源的长波长垂直腔面发射激光器及制作方法 |
WO2016008083A1 (zh) * | 2014-07-15 | 2016-01-21 | 华为技术有限公司 | 一种垂直腔面发射激光器vcsel |
KR102384228B1 (ko) * | 2015-09-30 | 2022-04-07 | 삼성전자주식회사 | 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자 |
EP3496216A1 (de) * | 2017-12-08 | 2019-06-12 | Koninklijke Philips N.V. | Segmentierter oberflächenemittierender laser mit vertikalem resonator |
CN109889178B (zh) * | 2018-12-26 | 2023-07-04 | 天津大学 | 体声波谐振器 |
CN112993751B (zh) * | 2021-01-28 | 2022-08-19 | 湖北光安伦芯片有限公司 | 一种纳米柱vcsel光源结构及其制备方法 |
US20220352693A1 (en) * | 2021-04-30 | 2022-11-03 | Lumentum Operations Llc | Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity |
CN113422292B (zh) * | 2021-06-22 | 2022-10-18 | 常州纵慧芯光半导体科技有限公司 | 一种垂直腔面发射激光器及其制造方法与应用 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0254981A (ja) * | 1988-08-20 | 1990-02-23 | Fujitsu Ltd | 面発光レーザ及びレーザアレイ |
DE4135813C2 (de) * | 1990-10-31 | 1997-11-06 | Toshiba Kawasaki Kk | Oberflächenemittierende Halbleiter-Laservorrichtung |
JPH04233291A (ja) * | 1990-12-28 | 1992-08-21 | Fujitsu Ltd | 半導体レーザ |
DE4240706A1 (de) * | 1992-12-03 | 1994-06-09 | Siemens Ag | Oberflächenemittierende Laserdiode |
WO1994013044A1 (de) * | 1992-12-03 | 1994-06-09 | Siemens Aktiengesellschaft | Abstimmbare oberflächenemittierende laserdiode |
US5301201A (en) * | 1993-03-01 | 1994-04-05 | At&T Bell Laboratories | Article comprising a tunable semiconductor laser |
EP0614255B1 (de) * | 1993-03-04 | 1997-09-10 | AT&T Corp. | Vorrichtung mit fokussierendem oberflächenemittierendem Halbleiterlaser |
US5357591A (en) * | 1993-04-06 | 1994-10-18 | Yuan Jiang | Cylindrical-wave controlling, generating and guiding devices |
US5388120A (en) * | 1993-09-21 | 1995-02-07 | Motorola, Inc. | VCSEL with unstable resonator |
-
1996
- 1996-09-26 JP JP9514054A patent/JPH11513534A/ja not_active Withdrawn
- 1996-09-26 AU AU70908/96A patent/AU698782B2/en not_active Ceased
- 1996-09-26 WO PCT/GB1996/002375 patent/WO1997013302A1/en active IP Right Grant
- 1996-09-26 DE DE69601948T patent/DE69601948T2/de not_active Expired - Lifetime
- 1996-09-26 US US09/043,768 patent/US6061381A/en not_active Expired - Fee Related
- 1996-09-26 EP EP96931904A patent/EP0852834B1/de not_active Expired - Lifetime
- 1996-09-26 CA CA002231396A patent/CA2231396C/en not_active Expired - Fee Related
- 1996-09-26 CN CN96197256.4A patent/CN1090398C/zh not_active Expired - Fee Related
-
2007
- 2007-09-04 JP JP2007228627A patent/JP2008022024A/ja not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10234152A1 (de) * | 2001-08-02 | 2003-02-13 | Furukawa Electric Co Ltd | Oberflächenemittierende Lasereinrichtung |
EP2101379A1 (de) | 2008-03-14 | 2009-09-16 | Universität Stuttgart | VCSEL mit monolithisch integrierter Fresnel-Linse |
DE102008014193A1 (de) * | 2008-03-14 | 2009-09-24 | Universität Stuttgart | Vertikal-Resonator-Laser |
Also Published As
Publication number | Publication date |
---|---|
JPH11513534A (ja) | 1999-11-16 |
CA2231396C (en) | 2001-02-27 |
AU7090896A (en) | 1997-04-28 |
CA2231396A1 (en) | 1997-04-10 |
US6061381A (en) | 2000-05-09 |
WO1997013302A1 (en) | 1997-04-10 |
AU698782B2 (en) | 1998-11-05 |
JP2008022024A (ja) | 2008-01-31 |
CN1090398C (zh) | 2002-09-04 |
CN1198265A (zh) | 1998-11-04 |
EP0852834B1 (de) | 1999-03-31 |
EP0852834A1 (de) | 1998-07-15 |
DE69601948D1 (de) | 1999-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: IPG PHOTONICS CORP., OXFORD, MASS., US |