DE69601981T2 - Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbid - Google Patents
Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbidInfo
- Publication number
- DE69601981T2 DE69601981T2 DE69601981T DE69601981T DE69601981T2 DE 69601981 T2 DE69601981 T2 DE 69601981T2 DE 69601981 T DE69601981 T DE 69601981T DE 69601981 T DE69601981 T DE 69601981T DE 69601981 T2 DE69601981 T2 DE 69601981T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- silicon carbide
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9500146A SE9500146D0 (sv) | 1995-01-18 | 1995-01-18 | Halvledarkomponent i kiselkarbid |
PCT/SE1996/000034 WO1996022610A1 (en) | 1995-01-18 | 1996-01-17 | Semiconductor device in silicon carbide |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69601981D1 DE69601981D1 (de) | 1999-05-12 |
DE69601981T2 true DE69601981T2 (de) | 1999-12-02 |
Family
ID=20396853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69601981T Expired - Fee Related DE69601981T2 (de) | 1995-01-18 | 1996-01-17 | Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbid |
Country Status (6)
Country | Link |
---|---|
US (1) | US5914499A (de) |
EP (1) | EP0750789B1 (de) |
JP (1) | JP4143120B2 (de) |
DE (1) | DE69601981T2 (de) |
SE (1) | SE9500146D0 (de) |
WO (1) | WO1996022610A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112009000535B4 (de) * | 2008-03-07 | 2013-08-01 | Mitsubishi Electric Corp. | Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE512259C2 (sv) * | 1998-03-23 | 2000-02-21 | Abb Research Ltd | Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning |
US6884644B1 (en) * | 1998-09-16 | 2005-04-26 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
US6803243B2 (en) * | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
JP3955396B2 (ja) | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
JP4320810B2 (ja) * | 1998-11-30 | 2009-08-26 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
US6218680B1 (en) | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
US6396080B2 (en) | 1999-05-18 | 2002-05-28 | Cree, Inc | Semi-insulating silicon carbide without vanadium domination |
US6373076B1 (en) * | 1999-12-07 | 2002-04-16 | Philips Electronics North America Corporation | Passivated silicon carbide devices with low leakage current and method of fabricating |
US6924215B2 (en) * | 2002-05-29 | 2005-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Method of monitoring high tilt angle of medium current implant |
US7157730B2 (en) * | 2002-12-20 | 2007-01-02 | Finisar Corporation | Angled wafer rotating ion implantation |
JP5122817B2 (ja) | 2003-05-09 | 2013-01-16 | クリー インコーポレイテッド | イオン・インプラント・アイソレーションによるled製作 |
US20050194584A1 (en) * | 2003-11-12 | 2005-09-08 | Slater David B.Jr. | LED fabrication via ion implant isolation |
US7592634B2 (en) * | 2004-05-06 | 2009-09-22 | Cree, Inc. | LED fabrication via ion implant isolation |
US7498651B2 (en) * | 2004-11-24 | 2009-03-03 | Microsemi Corporation | Junction termination structures for wide-bandgap power devices |
US7622358B2 (en) * | 2005-09-30 | 2009-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with semi-insulating substrate portions and method for forming the same |
JP5044117B2 (ja) * | 2005-12-14 | 2012-10-10 | 関西電力株式会社 | 炭化珪素バイポーラ型半導体装置 |
US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
CN102570294B (zh) * | 2012-01-12 | 2013-07-10 | 北京工业大学 | 一种真空解理大功率半导体激光器腔面氮钝化方法 |
JP6107430B2 (ja) * | 2012-06-08 | 2017-04-05 | 豊田合成株式会社 | 半導体装置 |
WO2014172697A1 (en) | 2013-04-19 | 2014-10-23 | Lightspin Technologies, Inc. | Integrated avalanche photodiode arrays |
WO2016178678A1 (en) | 2015-05-06 | 2016-11-10 | Lightspin Technologies, Inc. | Integrated avalanche photodiode arrays |
EP3180799B1 (de) * | 2015-06-09 | 2018-12-26 | ABB Schweiz AG | Siliciumcarbid-leistungshalbleiterbauelement mit einem randabschluss und verfahren zur herstellung des randabschlusses |
DE102015115173A1 (de) * | 2015-09-09 | 2017-03-09 | Infineon Technologies Austria Ag | Ein Halbleiterwafer, eine Implantationsvorrichtung zum Implantieren von Protonen und ein Verfahren zum Bilden eines Halbleiterbauelements |
JP6557134B2 (ja) * | 2015-12-24 | 2019-08-07 | 住重アテックス株式会社 | 半導体装置および半導体装置の製造方法 |
US10541300B2 (en) | 2016-05-26 | 2020-01-21 | General Electric Company | Semiconductor device and method of making thereof |
US10529884B2 (en) | 2017-11-09 | 2020-01-07 | LightSpin Technologies Inc. | Virtual negative bevel and methods of isolating adjacent devices |
US10608079B2 (en) | 2018-02-06 | 2020-03-31 | General Electric Company | High energy ion implantation for junction isolation in silicon carbide devices |
JP7312616B2 (ja) * | 2019-06-14 | 2023-07-21 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL131898C (de) * | 1965-03-26 | |||
US3458779A (en) * | 1967-11-24 | 1969-07-29 | Gen Electric | Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region |
US5270244A (en) * | 1993-01-25 | 1993-12-14 | North Carolina State University At Raleigh | Method for forming an oxide-filled trench in silicon carbide |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
WO1995032524A1 (en) * | 1994-05-24 | 1995-11-30 | Abb Research Ltd. | Semiconductor device in silicon carbide with passivated surface |
US5650654A (en) * | 1994-12-30 | 1997-07-22 | International Business Machines Corporation | MOSFET device having controlled parasitic isolation threshold voltage |
-
1995
- 1995-01-18 SE SE9500146A patent/SE9500146D0/xx unknown
-
1996
- 1996-01-17 WO PCT/SE1996/000034 patent/WO1996022610A1/en active IP Right Grant
- 1996-01-17 DE DE69601981T patent/DE69601981T2/de not_active Expired - Fee Related
- 1996-01-17 EP EP96901171A patent/EP0750789B1/de not_active Expired - Lifetime
- 1996-01-17 JP JP52220096A patent/JP4143120B2/ja not_active Expired - Lifetime
- 1996-01-17 US US08/716,252 patent/US5914499A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112009000535B4 (de) * | 2008-03-07 | 2013-08-01 | Mitsubishi Electric Corp. | Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung |
Also Published As
Publication number | Publication date |
---|---|
SE9500146D0 (sv) | 1995-01-18 |
WO1996022610A1 (en) | 1996-07-25 |
EP0750789B1 (de) | 1999-04-07 |
DE69601981D1 (de) | 1999-05-12 |
EP0750789A1 (de) | 1997-01-02 |
US5914499A (en) | 1999-06-22 |
JP4143120B2 (ja) | 2008-09-03 |
JPH09511103A (ja) | 1997-11-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |