DE69602131D1 - System zur Elektronstrahlabscheidung aus der Gasphase - Google Patents

System zur Elektronstrahlabscheidung aus der Gasphase

Info

Publication number
DE69602131D1
DE69602131D1 DE69602131T DE69602131T DE69602131D1 DE 69602131 D1 DE69602131 D1 DE 69602131D1 DE 69602131 T DE69602131 T DE 69602131T DE 69602131 T DE69602131 T DE 69602131T DE 69602131 D1 DE69602131 D1 DE 69602131D1
Authority
DE
Germany
Prior art keywords
ions
electron
evaporant
electron beam
gas phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69602131T
Other languages
English (en)
Other versions
DE69602131T2 (de
Inventor
Bret Halpern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jet Process Corp
Original Assignee
Jet Process Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jet Process Corp filed Critical Jet Process Corp
Application granted granted Critical
Publication of DE69602131D1 publication Critical patent/DE69602131D1/de
Publication of DE69602131T2 publication Critical patent/DE69602131T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/31Processing objects on a macro-scale
    • H01J2237/3132Evaporating
DE69602131T 1995-02-10 1996-02-09 System zur Elektronstrahlabscheidung aus der Gasphase Expired - Lifetime DE69602131T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/386,705 US5571332A (en) 1995-02-10 1995-02-10 Electron jet vapor deposition system
PCT/US1996/001820 WO1996024703A1 (en) 1995-02-10 1996-02-09 An electron jet vapor deposition system

Publications (2)

Publication Number Publication Date
DE69602131D1 true DE69602131D1 (de) 1999-05-27
DE69602131T2 DE69602131T2 (de) 1999-12-23

Family

ID=23526702

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69602131T Expired - Lifetime DE69602131T2 (de) 1995-02-10 1996-02-09 System zur Elektronstrahlabscheidung aus der Gasphase

Country Status (7)

Country Link
US (1) US5571332A (de)
EP (1) EP0753081B1 (de)
AT (1) ATE179221T1 (de)
AU (1) AU5022496A (de)
CA (1) CA2190086C (de)
DE (1) DE69602131T2 (de)
WO (1) WO1996024703A1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH690857A5 (de) * 1995-07-04 2001-02-15 Erich Bergmann Anlage zur plasmaunterstützten physikalischen Hochvakuumbedampfung von Werkstücken mit verschleissfesten Schichten und Verfahren zur Durchführung in dieser Anlage
US5859404A (en) * 1995-10-12 1999-01-12 Hughes Electronics Corporation Method and apparatus for plasma processing a workpiece in an enveloping plasma
DE19631407B4 (de) * 1996-08-05 2006-05-04 Unaxis Deutschland Holding Gmbh Vorrichtung zur plasmachemischen Abscheidung von polykristallinem Diamant
US5948166A (en) * 1996-11-05 1999-09-07 3M Innovative Properties Company Process and apparatus for depositing a carbon-rich coating on a moving substrate
GB2323855B (en) * 1997-04-01 2002-06-05 Ion Coat Ltd Method and apparatus for depositing a coating on a conductive substrate
US5846330A (en) * 1997-06-26 1998-12-08 Celestech, Inc. Gas injection disc assembly for CVD applications
US6027564A (en) * 1997-09-23 2000-02-22 American Superconductor Corporation Low vacuum vapor process for producing epitaxial layers
US6022832A (en) * 1997-09-23 2000-02-08 American Superconductor Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6428635B1 (en) 1997-10-01 2002-08-06 American Superconductor Corporation Substrates for superconductors
US6458223B1 (en) 1997-10-01 2002-10-01 American Superconductor Corporation Alloy materials
US6165554A (en) * 1997-11-12 2000-12-26 Jet Process Corporation Method for hydrogen atom assisted jet vapor deposition for parylene N and other polymeric thin films
US6509568B1 (en) 1998-11-02 2003-01-21 Advantest Corporation Electrostatic deflector for electron beam exposure apparatus
US6365016B1 (en) * 1999-03-17 2002-04-02 General Electric Company Method and apparatus for arc plasma deposition with evaporation of reagents
US6426125B1 (en) * 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
US6475311B1 (en) 1999-03-31 2002-11-05 American Superconductor Corporation Alloy materials
US6342132B1 (en) 1999-10-29 2002-01-29 International Business Machines Corporation Method of controlling gas density in an ionized physical vapor deposition apparatus
US6344416B1 (en) 2000-03-10 2002-02-05 International Business Machines Corporation Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions
US6669824B2 (en) 2000-07-10 2003-12-30 Unaxis Usa, Inc. Dual-scan thin film processing system
AU2001273260A1 (en) * 2000-07-10 2002-01-21 Opnetics Corporation Dual-scan thin film processing system
US6495010B2 (en) 2000-07-10 2002-12-17 Unaxis Usa, Inc. Differentially-pumped material processing system
US20030166311A1 (en) * 2001-09-12 2003-09-04 Seiko Epson Corporation Method for patterning, method for forming film, patterning apparatus, film formation apparatus, electro-optic apparatus and method for manufacturing the same, electronic equipment, and electronic apparatus and method for manufacturing the same
US7115516B2 (en) 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
US6588934B2 (en) * 2001-10-29 2003-07-08 United Technologies Corporation Silver-containing copper alloys for journal bearings
RU2200058C1 (ru) * 2002-02-12 2003-03-10 Открытое акционерное общество "ТВЭЛ" Способ проведения гомогенных и гетерогенных химических реакций с использованием плазмы
CA2460296C (en) * 2003-05-23 2012-02-14 Sulzer Metco Ag A hybrid method for the coating of a substrate by a thermal application of the coating
DE10335470A1 (de) * 2003-08-02 2005-02-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Beschichtung oder Modifizierung von Oberflächen
US7281853B2 (en) * 2003-12-01 2007-10-16 United Technologies Corporation Bearing material
US20050284568A1 (en) * 2004-06-28 2005-12-29 International Business Machines Corporation Removing unwanted film from wafer edge region with reactive gas jet
JP4122048B2 (ja) * 2005-08-29 2008-07-23 松下電器産業株式会社 蒸着ヘッド装置及び蒸着塗布方法
JP4405973B2 (ja) * 2006-01-17 2010-01-27 キヤノンアネルバ株式会社 薄膜作製装置
JP2009531535A (ja) * 2006-03-03 2009-09-03 ガードギール,プラサード 薄膜の広範囲多層原子層の化学蒸着処理のための装置および方法
CA2582312C (en) * 2006-05-05 2014-05-13 Sulzer Metco Ag A method for the manufacture of a coating
US8261690B2 (en) * 2006-07-14 2012-09-11 Georgia Tech Research Corporation In-situ flux measurement devices, methods, and systems
KR100849929B1 (ko) * 2006-09-16 2008-08-26 주식회사 피에조닉스 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US20080292903A1 (en) * 2007-05-25 2008-11-27 United Technologies Corporation Coated gas turbine engine component repair
US7812691B1 (en) 2007-11-08 2010-10-12 Greatbatch Ltd. Functionally graded coatings for lead wires in medical implantable hermetic feedthrough assemblies
US20110232573A1 (en) * 2008-12-09 2011-09-29 Ulvac, Inc. Catalytic Chemical Vapor Deposition Apparatus
EP2590756B1 (de) * 2010-07-07 2020-11-04 Directed Vapor Technologies International, Inc. Verfahren und vorrichtung zum aufbringen einer grossen menge einer beschichtung auf nicht sichtbaren bereichen eines substrats
KR102083448B1 (ko) * 2012-12-20 2020-03-03 삼성디스플레이 주식회사 기상 증착 장치, 이를 이용한 증착 방법 및 유기 발광 표시 장치 제조 방법
WO2014201292A1 (en) 2013-06-12 2014-12-18 General Plasma, Inc. Anode layer slit ion source
UA117592C2 (uk) 2013-08-01 2018-08-27 Арселорміттал Пофарбований оцинкований сталевий лист та спосіб його виготовлення
UA116262C2 (uk) * 2013-08-01 2018-02-26 Арселорміттал Сталевий лист з цинковим покриттям
US10167556B2 (en) * 2014-03-14 2019-01-01 The Board Of Trustees Of The University Of Illinois Apparatus and method for depositing a coating on a substrate at atmospheric pressure
US11154903B2 (en) * 2016-05-13 2021-10-26 Jiangsu Favored Nanotechnology Co., Ltd. Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization
TWI595110B (zh) * 2016-06-30 2017-08-11 Jung Tsai Weng Preparation of Multivariate Alloy Reactive Coating by Vacuum Ion Evaporation

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2155932A (en) * 1938-04-26 1939-04-25 Howard C Davis Process of deposition
BE573489A (fr) * 1957-12-03 1959-04-01 Union Carbide Corp Objet manufacturé recouvert d'une couche ou se composant de matières réfractaires pures.
US3382845A (en) * 1964-07-21 1968-05-14 Avisun Corp Separating liquid droplets in spray coating operation
FR1488568A (fr) * 1966-08-02 1967-07-13 Zentral Lab Elektrogeraete Veb Procédé pour établir une liaison électrique charbon-métal
US3654895A (en) * 1969-08-15 1972-04-11 Texas Instruments Inc Apparatus for forming a refractory coating on the inner periphery of a tubular object
FR2110622A5 (de) * 1970-10-23 1972-06-02 Commissariat Energie Atomique
US3808035A (en) * 1970-12-09 1974-04-30 M Stelter Deposition of single or multiple layers on substrates from dilute gas sweep to produce optical components, electro-optical components, and the like
US3850679A (en) * 1972-12-15 1974-11-26 Ppg Industries Inc Chemical vapor deposition of coatings
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
JPS53106391A (en) * 1977-02-28 1978-09-16 Nec Corp Fill-forming apparatus
JPS53123659A (en) * 1977-04-05 1978-10-28 Futaba Denshi Kogyo Kk Method of producing compound semiconductor wafer
CH628600A5 (fr) * 1979-02-14 1982-03-15 Siv Soc Italiana Vetro Procede pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide et installation pour la mise en oeuvre de ce procede.
DE3016807A1 (de) * 1980-05-02 1981-11-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von silizium
US4468283A (en) * 1982-12-17 1984-08-28 Irfan Ahmed Method for etching and controlled chemical vapor deposition
US4424104A (en) * 1983-05-12 1984-01-03 International Business Machines Corporation Single axis combined ion and vapor source
JPH0627329B2 (ja) * 1984-02-13 1994-04-13 シュミット,ジェロウム・ジェイ・ザ・サ−ド 導電および誘電性固体薄膜のガスジェット付着方法および装置とそれによって製造される生産物
CA1272662A (en) * 1985-03-26 1990-08-14 Canon Kabushiki Kaisha Apparatus and process for controlling flow of fine particles
JPH07101751B2 (ja) * 1985-03-28 1995-11-01 キヤノン株式会社 光起電力素子の製造方法
CA1272661A (en) * 1985-05-11 1990-08-14 Yuji Chiba Reaction apparatus
FR2590808B1 (fr) * 1985-12-04 1989-09-15 Canon Kk Dispositif de soufflage de particules fines
JPS62158195A (ja) * 1985-12-27 1987-07-14 Natl Inst For Res In Inorg Mater ダイヤモンドの合成法
KR900005118B1 (ko) * 1986-07-14 1990-07-19 미쓰비시전기주식회사 박막 형성장치
JPS6328874A (ja) * 1986-07-23 1988-02-06 Canon Inc 反応装置
US4974544A (en) * 1986-10-07 1990-12-04 Ricoh Company, Co. Vapor deposition apparatus
US4851254A (en) * 1987-01-13 1989-07-25 Nippon Soken, Inc. Method and device for forming diamond film
EP0286306B1 (de) * 1987-04-03 1993-10-06 Fujitsu Limited Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant
JPS6433096A (en) * 1987-04-03 1989-02-02 Fujitsu Ltd Gaseous phase synthesis for diamond
JPH01179789A (ja) * 1988-01-12 1989-07-17 Fujitsu Ltd ダイヤモンドの気相成長方法と熱プラズマ堆積方法およびプラズマ噴射装置
GB8713986D0 (en) * 1987-06-16 1987-07-22 Shell Int Research Apparatus for plasma surface treating
NL8701530A (nl) * 1987-06-30 1989-01-16 Stichting Fund Ond Material Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze.
JPH01100275A (ja) * 1987-10-09 1989-04-18 Canon Inc マイクロ波プラズマcvd法による機能性堆積膜形成装置
DE3809734C1 (de) * 1988-03-23 1989-05-03 Helmut Prof. Dr. 7805 Boetzingen De Haberland
KR920003591B1 (ko) * 1988-04-11 1992-05-04 미쯔비시주우고오교오 가부시기가이샤 연속진공증착장치
JPH0757039B2 (ja) * 1988-05-09 1995-06-14 株式会社ケンウッド 音響用振動板及びその製造法
JPH01292828A (ja) * 1988-05-20 1989-11-27 Jeol Ltd 誘導プラズマ応用装置
JPH0226895A (ja) * 1988-07-14 1990-01-29 Fujitsu Ltd ダイヤモンド気相合成方法及びその装置
JPH0263789A (ja) * 1988-08-31 1990-03-05 Matsushita Electric Ind Co Ltd 画像形成方法および記録体
JP2772959B2 (ja) * 1988-09-14 1998-07-09 オムロン株式会社 分離型制御機器
US4982067A (en) * 1988-11-04 1991-01-01 Marantz Daniel Richard Plasma generating apparatus and method
JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
US4970091A (en) * 1989-10-18 1990-11-13 The United States Of America As Represented By The United States Department Of Energy Method for gas-metal arc deposition
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
US5378285A (en) * 1993-02-10 1995-01-03 Matsushita Electric Industrial Co., Ltd. Apparatus for forming a diamond-like thin film

Also Published As

Publication number Publication date
DE69602131T2 (de) 1999-12-23
US5571332A (en) 1996-11-05
EP0753081A1 (de) 1997-01-15
EP0753081B1 (de) 1999-04-21
ATE179221T1 (de) 1999-05-15
CA2190086A1 (en) 1996-08-15
CA2190086C (en) 2000-09-12
WO1996024703A1 (en) 1996-08-15
AU5022496A (en) 1996-08-27

Similar Documents

Publication Publication Date Title
ATE179221T1 (de) System zur elektronstrahlabscheidung aus der gasphase
US4419203A (en) Apparatus and method for neutralizing ion beams
Zhurin Industrial ion sources: Broadbeam gridless ion source technology
US3136908A (en) Plurally charged ion beam generation method
US3956666A (en) Electron-bombardment ion sources
US4716340A (en) Pre-ionization aided sputter gun
GB1233404A (de)
EP0094473B1 (de) Verfahren und Vorrichtung zur Erzeugung eines Ionenstrahles
Tsuji et al. Measurement of negative‐ion‐production efficiencies and development of a dc operation sputter‐type negative ion source
JP3345009B2 (ja) 加熱により製造された材料蒸気のイオン化方法及び該方法を実施する装置
Schwirzke et al. Onset of breakdown and formation of cathode spots
Yukimura et al. Carbon ion production using a high-power impulse magnetron sputtering glow plasma
US3890535A (en) Ion sources
US20090020415A1 (en) "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source
Park et al. A stationary plasma thruster for modification of polymer and ceramic surfaces
GB2212520A (en) Ion source
GB2234265A (en) Electroarcing vapour deposition apparatus
GB1398167A (en) High pressure ion sources
US5025194A (en) Vapor and ion source
KR900008155B1 (ko) 박막형성방법 및 그 장치
JPS62122210A (ja) 薄膜形成装置
JPS6428367A (en) Electron beam vapor deposition device
JPH03166363A (ja) Icb蒸着装置
JPS63266065A (ja) 膜作成装置
JPS54100988A (en) Ion plating device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: ACKMANN MENGES PATENT- UND RECHTSANWAELTE, 80469 M