DE69603407D1 - Heterostrukturfeldeffektanordnung mit einem direkt auf der Kanalschicht gebildeten, hoch schmelzenden ohmischen Kontakt und Verfahren zur Herstellung - Google Patents
Heterostrukturfeldeffektanordnung mit einem direkt auf der Kanalschicht gebildeten, hoch schmelzenden ohmischen Kontakt und Verfahren zur HerstellungInfo
- Publication number
- DE69603407D1 DE69603407D1 DE69603407T DE69603407T DE69603407D1 DE 69603407 D1 DE69603407 D1 DE 69603407D1 DE 69603407 T DE69603407 T DE 69603407T DE 69603407 T DE69603407 T DE 69603407T DE 69603407 D1 DE69603407 D1 DE 69603407D1
- Authority
- DE
- Germany
- Prior art keywords
- melting
- production
- field effect
- channel layer
- ohmic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000002844 melting Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/434,867 US5606184A (en) | 1995-05-04 | 1995-05-04 | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69603407D1 true DE69603407D1 (de) | 1999-09-02 |
DE69603407T2 DE69603407T2 (de) | 2000-03-30 |
Family
ID=23726024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69603407T Expired - Fee Related DE69603407T2 (de) | 1995-05-04 | 1996-04-29 | Heterostrukturfeldeffektanordnung mit einem direkt auf der Kanalschicht gebildeten, hoch schmelzenden ohmischen Kontakt und Verfahren zur Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5606184A (de) |
EP (1) | EP0741417B1 (de) |
JP (1) | JPH08306910A (de) |
DE (1) | DE69603407T2 (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999031733A1 (en) * | 1997-12-18 | 1999-06-24 | Advanced Micro Devices, Inc. | Silicon oxynitride spacer for preventing over-etching during local interconnect formation |
US6392257B1 (en) * | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6528405B1 (en) | 2000-02-18 | 2003-03-04 | Motorola, Inc. | Enhancement mode RF device and fabrication method |
JP2004503920A (ja) * | 2000-05-31 | 2004-02-05 | モトローラ・インコーポレイテッド | 半導体デバイスおよび該半導体デバイスを製造する方法 |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
WO2002009187A2 (en) * | 2000-07-24 | 2002-01-31 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
DE10061529A1 (de) * | 2000-12-11 | 2002-06-27 | Infineon Technologies Ag | Feldeffekt gesteuertes Halbleiterbauelement und Verfahren |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US6632740B1 (en) * | 2001-02-02 | 2003-10-14 | Advanced Micro Devices, Inc. | Two-step process for nickel deposition |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6472694B1 (en) | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US6855992B2 (en) * | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6462360B1 (en) | 2001-08-06 | 2002-10-08 | Motorola, Inc. | Integrated gallium arsenide communications systems |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US20030036217A1 (en) * | 2001-08-16 | 2003-02-20 | Motorola, Inc. | Microcavity semiconductor laser coupled to a waveguide |
US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
US20040012037A1 (en) * | 2002-07-18 | 2004-01-22 | Motorola, Inc. | Hetero-integration of semiconductor materials on silicon |
US20040070312A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Integrated circuit and process for fabricating the same |
US20040069991A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Perovskite cuprate electronic device structure and process |
US6965128B2 (en) * | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US20040164315A1 (en) * | 2003-02-25 | 2004-08-26 | Motorola, Inc. | Structure and device including a tunneling piezoelectric switch and method of forming same |
JP2005129696A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7800097B2 (en) * | 2004-12-13 | 2010-09-21 | Panasonic Corporation | Semiconductor device including independent active layers and method for fabricating the same |
US7504677B2 (en) * | 2005-03-28 | 2009-03-17 | Freescale Semiconductor, Inc. | Multi-gate enhancement mode RF switch and bias arrangement |
US20080296705A1 (en) * | 2007-05-29 | 2008-12-04 | United Microelectronics Corp. | Gate and manufacturing method of gate material |
JP2009123957A (ja) * | 2007-11-15 | 2009-06-04 | Sumitomo Chemical Co Ltd | 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ |
US20130299895A1 (en) | 2012-05-09 | 2013-11-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Iii-v compound semiconductor device having dopant layer and method of making the same |
US8866195B2 (en) | 2012-07-06 | 2014-10-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | III-V compound semiconductor device having metal contacts and method of making the same |
US10720428B2 (en) * | 2015-11-10 | 2020-07-21 | Qorvo Us, Inc. | High bandgap Schottky contact layer device |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3684930A (en) * | 1970-12-28 | 1972-08-15 | Gen Electric | Ohmic contact for group iii-v p-types semiconductors |
DE2359640C2 (de) * | 1973-11-30 | 1983-09-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrischer Anschlußkontakt an einen Halbleiterkörper und Verwendung |
US4188710A (en) * | 1978-08-11 | 1980-02-19 | The United States Of America As Represented By The Secretary Of The Navy | Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films |
US4313971A (en) * | 1979-05-29 | 1982-02-02 | Rca Corporation | Method of fabricating a Schottky barrier contact |
JPS5984580A (ja) * | 1982-11-08 | 1984-05-16 | Nippon Telegr & Teleph Corp <Ntt> | 超短ゲ−ト電界効果トランジスタ |
US4540446A (en) * | 1983-09-19 | 1985-09-10 | Oki Electric Industry Co., Ltd. | Method of forming ohmic contact on GaAs by Ge film and implanting impurity ions therethrough |
US4712291A (en) * | 1985-06-06 | 1987-12-15 | The United States Of America As Represented By The Secretary Of The Air Force | Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs |
JPS61295671A (ja) * | 1985-06-21 | 1986-12-26 | ハネウエル・インコ−ポレ−テツド | 相補形プレ−ナ・ヘテロ構造icおよびその製造方法 |
US4729000A (en) * | 1985-06-21 | 1988-03-01 | Honeywell Inc. | Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates |
JPS6232660A (ja) * | 1985-08-06 | 1987-02-12 | Sony Corp | 半導体装置及びその製造方法 |
JPS62149125A (ja) * | 1985-12-23 | 1987-07-03 | Nec Corp | 半導体装置の製造方法 |
JPS62149138A (ja) * | 1985-12-23 | 1987-07-03 | Nec Corp | 半導体装置の製造方法 |
US5214298A (en) * | 1986-09-30 | 1993-05-25 | Texas Instruments Incorporated | Complementary heterostructure field effect transistors |
JPS6395620A (ja) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | オ−ミツク電極形成法 |
US4746627A (en) * | 1986-10-30 | 1988-05-24 | Mcdonnell Douglas Corporation | Method of making complementary GaAs heterojunction transistors |
US4998158A (en) * | 1987-06-01 | 1991-03-05 | Motorola, Inc. | Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier |
US5093280A (en) * | 1987-10-13 | 1992-03-03 | Northrop Corporation | Refractory metal ohmic contacts and method |
US4833042A (en) * | 1988-01-27 | 1989-05-23 | Rockwell International Corporation | Nonalloyed ohmic contacts for n type gallium arsenide |
US4830980A (en) * | 1988-04-22 | 1989-05-16 | Hughes Aircraft Company | Making complementary integrated p-MODFET and n-MODFET |
JP2893723B2 (ja) * | 1988-06-13 | 1999-05-24 | 住友電気工業株式会社 | オーミック電極の製造方法 |
US5144410A (en) * | 1989-03-29 | 1992-09-01 | Vitesse Semiconductor Corporation | Ohmic contact for III-V semiconductor devices |
US5045502A (en) * | 1990-05-10 | 1991-09-03 | Bell Communications Research, Inc. | PdIn ohmic contact to GaAs |
KR950009893B1 (ko) * | 1990-06-28 | 1995-09-01 | 미쓰비시 뎅끼 가부시끼가이샤 | 반도체기억장치 |
US5060031A (en) * | 1990-09-18 | 1991-10-22 | Motorola, Inc | Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices |
US5100835A (en) * | 1991-03-18 | 1992-03-31 | Eastman Kodak Company | Shallow ohmic contacts to N-GaAs |
US5116774A (en) * | 1991-03-22 | 1992-05-26 | Motorola, Inc. | Heterojunction method and structure |
US5275971A (en) * | 1992-04-20 | 1994-01-04 | Motorola, Inc. | Method of forming an ohmic contact to III-V semiconductor materials |
US5389564A (en) * | 1992-06-22 | 1995-02-14 | Motorola, Inc. | Method of forming a GaAs FET having etched ohmic contacts |
US5387548A (en) * | 1992-06-22 | 1995-02-07 | Motorola, Inc. | Method of forming an etched ohmic contact |
JPH06232660A (ja) * | 1993-02-03 | 1994-08-19 | Toshiba Corp | 高周波負帰還増幅器 |
GB2275569B (en) * | 1993-02-24 | 1996-08-07 | Toshiba Cambridge Res Center | Semiconductor device and method of making same |
US5444016A (en) * | 1993-06-25 | 1995-08-22 | Abrokwah; Jonathan K. | Method of making ohmic contacts to a complementary III-V semiconductor device |
US5480829A (en) * | 1993-06-25 | 1996-01-02 | Motorola, Inc. | Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts |
-
1995
- 1995-05-04 US US08/434,867 patent/US5606184A/en not_active Expired - Lifetime
-
1996
- 1996-04-25 JP JP8127648A patent/JPH08306910A/ja active Pending
- 1996-04-29 DE DE69603407T patent/DE69603407T2/de not_active Expired - Fee Related
- 1996-04-29 EP EP96106751A patent/EP0741417B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5606184A (en) | 1997-02-25 |
EP0741417A2 (de) | 1996-11-06 |
JPH08306910A (ja) | 1996-11-22 |
EP0741417B1 (de) | 1999-07-28 |
EP0741417A3 (de) | 1997-01-15 |
DE69603407T2 (de) | 2000-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69603407D1 (de) | Heterostrukturfeldeffektanordnung mit einem direkt auf der Kanalschicht gebildeten, hoch schmelzenden ohmischen Kontakt und Verfahren zur Herstellung | |
EP0818652B1 (de) | Beleuchtungsleiste und Verfahren zur Herstellung | |
TW342572B (en) | Electroluminescent lamp designs | |
DE69107690D1 (de) | Dünnfilmelektrode für Vorrichtungen und elektrolumineszente Vorrichtung damit und Verfahren zur Herstellung derselben. | |
DE69719484D1 (de) | Thermoplastische elastomerzusammensetzung, schlauch aus dieser zusammensetzung und verfahren zur herstellung | |
DE69729158D1 (de) | Auf einem Substrat hergestellte Quantendrähte und deren Herstellungsverfahren, sowie ein Bauteil mit Quantendrähten auf einem Substrat | |
DE59902476D1 (de) | STROMBEGRENZUNGSEINRICHTUNG MIT LEITERBAHNANORDNUNG AUS HOCH-Tc-SUPRALEITERMATERIAL SOWIE VERFAHREN ZUR HERSTELLUNG DER EINRICHTUNG | |
DE3675913D1 (de) | Extruderduese zur herstellung zwei-schichtiger rohrleitungen. | |
DE59104547D1 (de) | Verfahren zur Herstellung einer elektrisch leitenden Spitze aus einem dotierten Halbleitermaterial. | |
DE69841854D1 (de) | Verfahren zur Herstellung eines Wertbeständigen Bipolartransistors mit elektrisch isolierenden Elementen | |
DE59606539D1 (de) | Vorrichtung zur Herstellung von Rohren aus thermoplastischem Kunststoff mit Querprofilierung | |
DE69528107D1 (de) | Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einem Feldeffekttransistor, einem Kondensator und einem Widerstand. | |
DE3682009D1 (de) | Mehrkanalstrukturen aus verbundwerkstoff, sowie verfahren und halbzeug fuer deren herstellung. | |
DE68901782D1 (de) | Brennstoffzelle, elektrode fuer die zelle und verfahren zur herstellung. | |
DE69825293D1 (de) | Drahtgewebe-band mit variablen abständen und verfahren zur herstellung | |
DE3381801D1 (de) | Halbleiteranordnung mit einer zwischenschicht aus einem uebergangselement und verfahren zur herstellung derselben. | |
DE3667936D1 (de) | Steifer formkoerper aus miteinander verpressten orientierten kunststofftraegern sowie verfahren zu seiner herstellung. | |
DE68906431D1 (de) | Verlaengerte elektrolumineszierende zelle sowie verfahren zur herstellung. | |
DE69022836T2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung mit Monosiliziumgebieten und Polysiliziumleiterbahnen, die mit einer Metallsiliziddeckschicht versehen sind. | |
DE3781496T2 (de) | Giessverfahren zur herstellung eines giesslings aus kunststoff. | |
DE59504794D1 (de) | Schlauch mit elektrisch leitfähiger Innenschicht sowie Verfahren zu seiner Herstellung | |
EP0807973A3 (de) | Halbleiteranordnung vom Plastikumhüllungstyp und Herstellungsverfahren dafür | |
DE69729354D1 (de) | Rutschfestes Gewebe | |
DE69525739D1 (de) | Verfahren zur herstellung von halbleiterbauteilen mit halbleiterelementen, die in einer halbleiterschicht gebildet wurden, welche auf einen trägerwafer geklebt sind | |
DE3685842T2 (de) | Verfahren zur herstellung eines ohmischen kontaktes auf einem iii-v halbleiter und hergestelltes halbleiterzwischenprodukt. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US |
|
8339 | Ceased/non-payment of the annual fee |