DE69605670T2 - Plasmabearbeitungssystem mit reduzierterpartikeln kontaminierung - Google Patents

Plasmabearbeitungssystem mit reduzierterpartikeln kontaminierung

Info

Publication number
DE69605670T2
DE69605670T2 DE69605670T DE69605670T DE69605670T2 DE 69605670 T2 DE69605670 T2 DE 69605670T2 DE 69605670 T DE69605670 T DE 69605670T DE 69605670 T DE69605670 T DE 69605670T DE 69605670 T2 DE69605670 T2 DE 69605670T2
Authority
DE
Germany
Prior art keywords
processing system
plasma processing
particle contamination
reduced particle
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69605670T
Other languages
English (en)
Other versions
DE69605670D1 (de
Inventor
Alexander Lantsman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69605670D1 publication Critical patent/DE69605670D1/de
Publication of DE69605670T2 publication Critical patent/DE69605670T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
DE69605670T 1995-06-07 1996-05-06 Plasmabearbeitungssystem mit reduzierterpartikeln kontaminierung Expired - Fee Related DE69605670T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/478,950 US5573597A (en) 1995-06-07 1995-06-07 Plasma processing system with reduced particle contamination
PCT/US1996/006323 WO1996041366A1 (en) 1995-06-07 1996-05-06 Plasma processing system with reduced particle contamination

Publications (2)

Publication Number Publication Date
DE69605670D1 DE69605670D1 (de) 2000-01-20
DE69605670T2 true DE69605670T2 (de) 2000-07-13

Family

ID=23902052

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605670T Expired - Fee Related DE69605670T2 (de) 1995-06-07 1996-05-06 Plasmabearbeitungssystem mit reduzierterpartikeln kontaminierung

Country Status (8)

Country Link
US (1) US5573597A (de)
EP (1) EP0830708B1 (de)
JP (1) JPH11509979A (de)
KR (1) KR100277843B1 (de)
AU (1) AU5853596A (de)
DE (1) DE69605670T2 (de)
TW (1) TW287293B (de)
WO (1) WO1996041366A1 (de)

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US6245189B1 (en) 1994-12-05 2001-06-12 Nordson Corporation High Throughput plasma treatment system
US5672242A (en) * 1996-01-31 1997-09-30 Integrated Device Technology, Inc. High selectivity nitride to oxide etch process
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US5902494A (en) * 1996-02-09 1999-05-11 Applied Materials, Inc. Method and apparatus for reducing particle generation by limiting DC bias spike
US5858108A (en) * 1996-07-15 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd Removal of particulate contamination in loadlocks
JP3220383B2 (ja) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5779807A (en) 1996-10-29 1998-07-14 Applied Materials, Inc. Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers
US6749717B1 (en) * 1997-02-04 2004-06-15 Micron Technology, Inc. Device for in-situ cleaning of an inductively-coupled plasma chambers
DE19713637C2 (de) * 1997-04-02 1999-02-18 Max Planck Gesellschaft Teilchenmanipulierung
JP4120974B2 (ja) * 1997-06-17 2008-07-16 キヤノンアネルバ株式会社 薄膜作製方法および薄膜作製装置
US6352049B1 (en) * 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
DE19814871A1 (de) 1998-04-02 1999-10-07 Max Planck Gesellschaft Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition
JP4153606B2 (ja) * 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
US6972071B1 (en) 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
US6290821B1 (en) 1999-07-15 2001-09-18 Seagate Technology Llc Sputter deposition utilizing pulsed cathode and substrate bias power
US6237527B1 (en) * 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6709522B1 (en) 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6841033B2 (en) * 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
JP3555084B2 (ja) 2001-06-11 2004-08-18 Ｎｅｃエレクトロニクス株式会社 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置
JP2006524914A (ja) * 2003-03-31 2006-11-02 東京エレクトロン株式会社 プラズマ処理システム及び方法
US7276135B2 (en) * 2004-05-28 2007-10-02 Lam Research Corporation Vacuum plasma processor including control in response to DC bias voltage
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
CN100517595C (zh) * 2004-07-02 2009-07-22 株式会社爱发科 蚀刻方法和系统
KR100672820B1 (ko) 2004-11-12 2007-01-22 삼성전자주식회사 플라즈마를 사용한 피처리체의 처리 방법
US20110011534A1 (en) * 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
EP2326151A1 (de) * 2009-11-24 2011-05-25 AGC Glass Europe Verfahren und Vorrichtung zur Polarisierung einer DBD-Elektrode
JP5397215B2 (ja) * 2009-12-25 2014-01-22 ソニー株式会社 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
JP6224958B2 (ja) * 2013-02-20 2017-11-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9875881B2 (en) * 2013-02-20 2018-01-23 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) * 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) * 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
US20180323045A1 (en) * 2017-05-02 2018-11-08 Tokyo Electron Limited Manufacturing methods to reduce surface particle impurities after a plasma process
US20200048770A1 (en) * 2018-08-07 2020-02-13 Lam Research Corporation Chemical vapor deposition tool for preventing or suppressing arcing
TW202340495A (zh) 2019-02-11 2023-10-16 美商應用材料股份有限公司 物理氣相沉積方法
WO2021050308A1 (en) * 2019-09-12 2021-03-18 Applied Materials, Inc. Repulsion mesh and deposition methods
US20220119952A1 (en) * 2020-10-20 2022-04-21 Applied Materials, Inc. Method of reducing defects in a multi-layer pecvd teos oxide film

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Publication number Priority date Publication date Assignee Title
US4795880A (en) * 1986-09-11 1989-01-03 Hayes James A Low pressure chemical vapor deposition furnace plasma clean apparatus
US5367139A (en) * 1989-10-23 1994-11-22 International Business Machines Corporation Methods and apparatus for contamination control in plasma processing
US5242561A (en) * 1989-12-15 1993-09-07 Canon Kabushiki Kaisha Plasma processing method and plasma processing apparatus
US5294320A (en) * 1990-02-09 1994-03-15 Applied Materials, Inc. Apparatus for cleaning a shield in a physical vapor deposition chamber
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
US5478429A (en) * 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus
US5449432A (en) * 1993-10-25 1995-09-12 Applied Materials, Inc. Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication

Also Published As

Publication number Publication date
WO1996041366A1 (en) 1996-12-19
KR19990022731A (ko) 1999-03-25
TW287293B (en) 1996-10-01
AU5853596A (en) 1996-12-30
JPH11509979A (ja) 1999-08-31
KR100277843B1 (ko) 2001-02-01
US5573597A (en) 1996-11-12
EP0830708A1 (de) 1998-03-25
DE69605670D1 (de) 2000-01-20
EP0830708B1 (de) 1999-12-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee