DE69608342D1 - Verfahren zur Herstellung eines Gegenstands, welcher aus einem eine Spinellstruktur aufweisenden auf ein Substrat angeordneten Material besteht - Google Patents

Verfahren zur Herstellung eines Gegenstands, welcher aus einem eine Spinellstruktur aufweisenden auf ein Substrat angeordneten Material besteht

Info

Publication number
DE69608342D1
DE69608342D1 DE69608342T DE69608342T DE69608342D1 DE 69608342 D1 DE69608342 D1 DE 69608342D1 DE 69608342 T DE69608342 T DE 69608342T DE 69608342 T DE69608342 T DE 69608342T DE 69608342 D1 DE69608342 D1 DE 69608342D1
Authority
DE
Germany
Prior art keywords
producing
substrate
spinel structure
spinel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69608342T
Other languages
English (en)
Other versions
DE69608342T2 (de
Inventor
Ernst Michael Gyorgy
Yuri Suzuki
Julia Mae Phillips
Dover Robert Bruce Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69608342D1 publication Critical patent/DE69608342D1/de
Publication of DE69608342T2 publication Critical patent/DE69608342T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/265—Magnetic multilayers non exchange-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
DE69608342T 1995-03-17 1996-03-05 Verfahren zur Herstellung eines Gegenstands, welcher aus einem eine Spinellstruktur aufweisenden auf ein Substrat angeordneten Material besteht Expired - Fee Related DE69608342T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40608495A 1995-03-17 1995-03-17

Publications (2)

Publication Number Publication Date
DE69608342D1 true DE69608342D1 (de) 2000-06-21
DE69608342T2 DE69608342T2 (de) 2000-10-19

Family

ID=23606478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69608342T Expired - Fee Related DE69608342T2 (de) 1995-03-17 1996-03-05 Verfahren zur Herstellung eines Gegenstands, welcher aus einem eine Spinellstruktur aufweisenden auf ein Substrat angeordneten Material besteht

Country Status (5)

Country Link
US (1) US5728421A (de)
EP (1) EP0732428B1 (de)
JP (1) JPH08298310A (de)
KR (1) KR960034485A (de)
DE (1) DE69608342T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6716488B2 (en) 2001-06-22 2004-04-06 Agere Systems Inc. Ferrite film formation method
US20080089834A1 (en) * 2004-09-07 2008-04-17 Tatsuya Kodama Reactive Working Material for Use in Hydrogen Production by Decompostion of Water
US7482758B2 (en) * 2005-03-03 2009-01-27 Leviton Manufacturing Co., Inc. Magnetic low voltage dimmer
FR2922560B1 (fr) 2007-10-18 2010-01-01 Commissariat Energie Atomique Procede de production de films ultra-minces de ferrites et articles en resultant
JP5546895B2 (ja) 2009-04-30 2014-07-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3421933A (en) * 1966-12-14 1969-01-14 North American Rockwell Spinel ferrite epitaxial composite
JPS5133898A (de) * 1974-09-17 1976-03-23 Hitachi Ltd
US3996095A (en) * 1975-04-16 1976-12-07 International Business Machines Corporation Epitaxial process of forming ferrite, Fe3 O4 and γFe2 O3 thin films on special materials
JPS59111929A (ja) * 1982-12-15 1984-06-28 Masanori Abe フエライト膜作製方法
US5213851A (en) * 1990-04-17 1993-05-25 Alfred University Process for preparing ferrite films by radio-frequency generated aerosol plasma deposition in atmosphere
US5549977A (en) * 1993-11-18 1996-08-27 Lucent Technologies Inc. Article comprising magnetoresistive material
US5478653A (en) * 1994-04-04 1995-12-26 Guenzer; Charles S. Bismuth titanate as a template layer for growth of crystallographically oriented silicon

Also Published As

Publication number Publication date
KR960034485A (ko) 1996-10-22
DE69608342T2 (de) 2000-10-19
JPH08298310A (ja) 1996-11-12
US5728421A (en) 1998-03-17
EP0732428A1 (de) 1996-09-18
EP0732428B1 (de) 2000-05-17

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee