DE69611851T2 - Haltevorrichtung für ein Substrat und Verfahren und Vorrichtung zum Polieren eines Substrates - Google Patents

Haltevorrichtung für ein Substrat und Verfahren und Vorrichtung zum Polieren eines Substrates

Info

Publication number
DE69611851T2
DE69611851T2 DE69611851T DE69611851T DE69611851T2 DE 69611851 T2 DE69611851 T2 DE 69611851T2 DE 69611851 T DE69611851 T DE 69611851T DE 69611851 T DE69611851 T DE 69611851T DE 69611851 T2 DE69611851 T2 DE 69611851T2
Authority
DE
Germany
Prior art keywords
substrate
polishing
holding device
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69611851T
Other languages
English (en)
Other versions
DE69611851D1 (de
Inventor
Mikio Nishio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP31297895A external-priority patent/JP2758152B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69611851D1 publication Critical patent/DE69611851D1/de
Publication of DE69611851T2 publication Critical patent/DE69611851T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
DE69611851T 1995-04-10 1996-04-10 Haltevorrichtung für ein Substrat und Verfahren und Vorrichtung zum Polieren eines Substrates Expired - Lifetime DE69611851T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8386095 1995-04-10
JP14153695 1995-06-08
JP31297895A JP2758152B2 (ja) 1995-04-10 1995-11-30 被研磨基板の保持装置及び基板の研磨方法

Publications (2)

Publication Number Publication Date
DE69611851D1 DE69611851D1 (de) 2001-04-05
DE69611851T2 true DE69611851T2 (de) 2001-06-13

Family

ID=27304352

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69611851T Expired - Lifetime DE69611851T2 (de) 1995-04-10 1996-04-10 Haltevorrichtung für ein Substrat und Verfahren und Vorrichtung zum Polieren eines Substrates

Country Status (7)

Country Link
US (2) US5791973A (de)
EP (1) EP0737546B1 (de)
KR (1) KR100209383B1 (de)
CN (2) CN1141202C (de)
CA (1) CA2173639A1 (de)
DE (1) DE69611851T2 (de)
TW (3) TW400567B (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695392A (en) * 1995-08-09 1997-12-09 Speedfam Corporation Polishing device with improved handling of fluid polishing media
JPH1086056A (ja) * 1996-09-11 1998-04-07 Speedfam Co Ltd 研磨パッドの管理方法及び装置
JP2965536B2 (ja) * 1996-12-17 1999-10-18 松下電器産業株式会社 被研磨基板の保持装置
TW431942B (en) * 1997-04-04 2001-05-01 Tokyo Seimitsu Co Ltd Polishing device
US5957751A (en) * 1997-05-23 1999-09-28 Applied Materials, Inc. Carrier head with a substrate detection mechanism for a chemical mechanical polishing system
US6398621B1 (en) 1997-05-23 2002-06-04 Applied Materials, Inc. Carrier head with a substrate sensor
MY120754A (en) * 1997-08-11 2005-11-30 Tokyo Seimitsu Co Ltd Wafer polishing apparatus
TW434095B (en) * 1997-08-11 2001-05-16 Tokyo Seimitsu Co Ltd Wafer polishing apparatus
GB2345257B (en) * 1997-09-01 2002-11-06 United Microelectronics Corp Chemical-mechanical polishing method and fabricating method
JPH11226865A (ja) * 1997-12-11 1999-08-24 Speedfam Co Ltd キャリア及びcmp装置
US6142857A (en) * 1998-01-06 2000-11-07 Speedfam-Ipec Corporation Wafer polishing with improved backing arrangement
US5989104A (en) * 1998-01-12 1999-11-23 Speedfam-Ipec Corporation Workpiece carrier with monopiece pressure plate and low gimbal point
JPH11285966A (ja) * 1998-04-02 1999-10-19 Speedfam-Ipec Co Ltd キャリア及びcmp装置
JPH11300608A (ja) * 1998-04-20 1999-11-02 Nec Corp 化学機械研磨装置
US6106379A (en) * 1998-05-12 2000-08-22 Speedfam-Ipec Corporation Semiconductor wafer carrier with automatic ring extension
US5985094A (en) * 1998-05-12 1999-11-16 Speedfam-Ipec Corporation Semiconductor wafer carrier
US6436228B1 (en) * 1998-05-15 2002-08-20 Applied Materials, Inc. Substrate retainer
JP2907209B1 (ja) * 1998-05-29 1999-06-21 日本電気株式会社 ウェハ研磨装置用裏面パッド
US6217425B1 (en) * 1998-06-12 2001-04-17 Tdk Corporation Apparatus and method for lapping magnetic heads
US5925576A (en) * 1998-08-19 1999-07-20 Promos Technologies, Inc. Method and apparatus for controlling backside pressure during chemical mechanical polishing
JP3502550B2 (ja) * 1998-10-07 2004-03-02 株式会社東芝 研磨装置
US6132298A (en) * 1998-11-25 2000-10-17 Applied Materials, Inc. Carrier head with edge control for chemical mechanical polishing
JP2000228391A (ja) * 1998-11-30 2000-08-15 Canon Inc 半導体基板の精密研磨方法および装置
US6290589B1 (en) * 1998-12-09 2001-09-18 Applied Materials, Inc. Polishing pad with a partial adhesive coating
US6422927B1 (en) * 1998-12-30 2002-07-23 Applied Materials, Inc. Carrier head with controllable pressure and loading area for chemical mechanical polishing
EP1052060A3 (de) * 1999-05-03 2001-04-18 Applied Materials, Inc. Verfahren zum chemisch-mechanischen Planarisieren
US6722963B1 (en) 1999-08-03 2004-04-20 Micron Technology, Inc. Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane
US6217412B1 (en) * 1999-08-11 2001-04-17 Advanced Micro Devices, Inc. Method for characterizing polish pad lots to eliminate or reduce tool requalification after changing a polishing pad
KR200179193Y1 (ko) * 1999-11-12 2000-04-15 박철호 최소형 피. 씨. 비 기판의 접속부 연마장치
US6264532B1 (en) 2000-03-28 2001-07-24 Speedfam-Ipec Corporation Ultrasonic methods and apparatus for the in-situ detection of workpiece loss
US6616801B1 (en) 2000-03-31 2003-09-09 Lam Research Corporation Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path
US6773337B1 (en) * 2000-11-07 2004-08-10 Planar Labs Corporation Method and apparatus to recondition an ion exchange polish pad
DE10059345A1 (de) * 2000-11-29 2002-06-13 Infineon Technologies Ag Halbleitersubstrathalter für chemisch-mechanisches Polieren
US6517426B2 (en) 2001-04-05 2003-02-11 Lam Research Corporation Composite polishing pad for chemical-mechanical polishing
US6910949B1 (en) * 2001-04-25 2005-06-28 Lam Research Corporation Spherical cap-shaped polishing head in a chemical mechanical polishing apparatus for semiconductor wafers
US6966816B2 (en) * 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
DE60101458T2 (de) 2001-05-25 2004-10-28 Infineon Technologies Ag Halbleitersubstrathalter mit bewegbarer Platte für das chemisch-mechanische Polierverfahren
JP4102081B2 (ja) * 2002-02-28 2008-06-18 株式会社荏原製作所 研磨装置及び研磨面の異物検出方法
KR100848556B1 (ko) * 2002-03-25 2008-07-25 엘지디스플레이 주식회사 액정 패널의 회전 버퍼 및 이를 이용한 러빙장치
US20060166610A1 (en) * 2002-09-02 2006-07-27 Takakazu Miyahara Optical disk polishing device
US7288465B2 (en) * 2003-04-15 2007-10-30 International Business Machines Corpoartion Semiconductor wafer front side protection
US7178235B2 (en) * 2003-12-03 2007-02-20 Reflex Photonics Inc. Method of manufacturing an optoelectronic package
KR100558196B1 (ko) * 2003-10-28 2006-03-10 삼성전자주식회사 투과전자현미경 검사용 시편을 고정시키기 위한 마운트 및이를사용하는 시편 제조 방법
DE102005011107A1 (de) * 2005-03-10 2006-09-21 Infineon Technologies Ag Verfahren und Vorrichtung zum Bearbeiten von Wafern auf Montageträgern
US20060211349A1 (en) * 2005-03-18 2006-09-21 Seh America, Inc. Wafer polishing template for polishing semiconductor wafers in a wax free polishing process
CN100453269C (zh) * 2006-12-12 2009-01-21 友达光电股份有限公司 基板支架及其固定构件
JP5191312B2 (ja) * 2008-08-25 2013-05-08 東京エレクトロン株式会社 プローブの研磨方法、プローブ研磨用プログラム及びプローブ装置
JP5516051B2 (ja) * 2010-05-13 2014-06-11 旭硝子株式会社 研磨パッドを用いた研磨装置及びガラス板の製造方法
JP6073222B2 (ja) 2010-08-06 2017-02-01 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 保定リングを用いた基板縁部調整
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
JP5807580B2 (ja) * 2012-02-15 2015-11-10 信越半導体株式会社 研磨ヘッド及び研磨装置
JP6113960B2 (ja) 2012-02-21 2017-04-12 株式会社荏原製作所 基板処理装置および基板処理方法
CN102717324B (zh) * 2012-05-29 2016-05-11 深圳莱宝高科技股份有限公司 基板处理装置
JP6049183B2 (ja) * 2012-11-21 2016-12-21 株式会社ディスコ 研削装置
JP5870960B2 (ja) * 2013-05-16 2016-03-01 信越半導体株式会社 ワークの研磨装置
CN103465182A (zh) * 2013-09-03 2013-12-25 宇环数控机床股份有限公司 一种带分液装置的抛光轮
US9240042B2 (en) * 2013-10-24 2016-01-19 Globalfoundries Inc. Wafer slip detection during CMP processing
CN103639886A (zh) * 2013-11-29 2014-03-19 上海华力微电子有限公司 用于w-cmp的化学机械研磨装置及研磨方法
CN104070466B (zh) * 2014-06-25 2016-10-05 江苏吉星新材料有限公司 一种树脂抛光盘
TWI548107B (zh) * 2014-08-25 2016-09-01 財團法人工業技術研究院 氣密組件、具有其之裝置及其測漏方法
US9744640B2 (en) * 2015-10-16 2017-08-29 Applied Materials, Inc. Corrosion resistant retaining rings
JP6380333B2 (ja) * 2015-10-30 2018-08-29 株式会社Sumco ウェーハ研磨装置およびこれに用いる研磨ヘッド
JP6394569B2 (ja) * 2015-11-06 2018-09-26 信越半導体株式会社 ウェーハの研磨方法及び研磨装置
US10160091B2 (en) 2015-11-16 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. CMP polishing head design for improving removal rate uniformity
US20170252893A1 (en) * 2016-03-03 2017-09-07 P.R. Hoffman Machine Products Inc. Polishing machine work piece holder
US10556317B2 (en) 2016-03-03 2020-02-11 P.R. Hoffman Machine Products Inc. Polishing machine wafer holder
CN106402916A (zh) * 2016-11-29 2017-02-15 郑州中拓知识产权代理有限公司 一种能分层抛洒的锅炉煤粉进料装置
JP6360586B1 (ja) * 2017-04-13 2018-07-18 三菱電線工業株式会社 Cmp装置のウエハ保持用の弾性膜
KR102012786B1 (ko) 2017-05-17 2019-08-21 모던세라믹스(주) 드레싱 블록의 교체가 가능한 포지셔너 및 그 제조방법
JP6506797B2 (ja) * 2017-06-09 2019-04-24 Towa株式会社 研削装置および研削方法
JP6312229B1 (ja) * 2017-06-12 2018-04-18 信越半導体株式会社 研磨方法及び研磨装置
CN107617971B (zh) * 2017-10-24 2019-11-29 德淮半导体有限公司 研磨垫及研磨设备和方法
CN107984374A (zh) * 2017-11-30 2018-05-04 上海华力微电子有限公司 一种化学机械抛光研磨速率的实时侦测装置及其侦测方法
JP6891847B2 (ja) * 2018-04-05 2021-06-18 信越半導体株式会社 研磨ヘッド及びウェーハの研磨方法
CN108381376B (zh) * 2018-04-10 2020-01-24 中北大学 一种超声研磨蓝宝石镜片的加工装置
JP7075814B2 (ja) * 2018-05-21 2022-05-26 株式会社荏原製作所 基板保持装置、基板研磨装置、弾性部材および基板保持装置の製造方法
KR20200016175A (ko) * 2018-08-06 2020-02-14 가부시키가이샤 에바라 세이사꾸쇼 기판 보유 지지 장치, 기판 흡착 판정 방법, 기판 연마 장치, 기판 연마 방법, 연마되는 웨이퍼의 상면으로부터 액체를 제거하는 방법, 및 웨이퍼를 연마 패드에 압박하기 위한 탄성막, 기판 릴리스 방법 및 정량 기체 공급 장치
CN110695849B (zh) * 2019-10-23 2020-09-15 清华大学 一种晶圆厚度测量装置和磨削机台
CN111922883A (zh) * 2020-07-17 2020-11-13 涂凯飞 一种抛光时自动添加抛光液的抛光装置
CN113400176A (zh) * 2021-06-21 2021-09-17 西安奕斯伟硅片技术有限公司 一种硅片边缘抛光装置以及方法
CN115816267A (zh) * 2022-12-29 2023-03-21 西安奕斯伟材料科技有限公司 硅片双面抛光装置的承载件及硅片双面抛光装置

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998680A (en) * 1958-07-21 1961-09-05 Morton S Lipkins Lapping machines
US3731435A (en) * 1971-02-09 1973-05-08 Speedfam Corp Polishing machine load plate
US3982358A (en) * 1973-10-09 1976-09-28 Heijiro Fukuda Laminated resinoid wheels, method for continuously producing same and apparatus for use in the method
US3863395A (en) * 1974-02-19 1975-02-04 Shugart Associates Inc Apparatus for polishing a spherical surface on a magnetic recording transducer
JPS5944190B2 (ja) * 1977-04-20 1984-10-27 関西ペイント株式会社 研摩材の製造方法
FR2551382B1 (fr) * 1983-09-02 1986-05-16 Essilor Int Procede et dispositif pour le surfacage d'une lentille optique
WO1985005734A1 (en) * 1984-05-29 1985-12-19 Mitsui Toatsu Chemicals, Incorporated Film for machining wafers
JPS614661A (ja) * 1984-06-13 1986-01-10 Nec Corp 平面研摩装置の被加工物保持機構
JPS6138857A (ja) * 1984-07-28 1986-02-24 Hoya Corp 平面加工装置
JPS6224962A (ja) * 1985-07-19 1987-02-02 Mitsubishi Metal Corp 半導体ウエハの保持具
NL8503217A (nl) * 1985-11-22 1987-06-16 Hoogovens Groep Bv Preparaathouder.
JPH0741534B2 (ja) * 1986-11-10 1995-05-10 不二越機械工業株式会社 ウエーハの研摩方法及び研摩装置
JPH0767665B2 (ja) * 1986-12-08 1995-07-26 スピ−ドフアム株式会社 平面研磨装置
JPS63188265A (ja) * 1987-01-31 1988-08-03 Tokyo Electric Co Ltd 無線注文システム
JPH01188265A (ja) * 1988-01-25 1989-07-27 Hitachi Ltd ラツプ加工装置
JPH01193166A (ja) * 1988-01-28 1989-08-03 Showa Denko Kk 半導体ウェハ鏡面研磨用パッド
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP2527232B2 (ja) * 1989-03-16 1996-08-21 株式会社日立製作所 研磨装置
JPH03173129A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd 研磨装置
US5104828A (en) * 1990-03-01 1992-04-14 Intel Corporation Method of planarizing a dielectric formed over a semiconductor substrate
JPH0761609B2 (ja) * 1990-03-23 1995-07-05 株式会社フジミインコーポレーテツド 研磨方法及びこれに用いる研磨パッド
JP3256226B2 (ja) * 1990-10-09 2002-02-12 ミネソタ・マイニング・アンド・マニュファクチュアリング・カンパニー 浸蝕性凝集体を有する被覆研磨材料
US5172448A (en) * 1991-03-26 1992-12-22 Waxing Corporation Of America Molded buffer pad
JPH04310365A (ja) * 1991-04-08 1992-11-02 Toshiba Corp 研磨皿
JP2770087B2 (ja) * 1991-09-17 1998-06-25 不二越機械工業株式会社 ウェーハの研磨方法及びその研磨用トップリング
JPH0783709B2 (ja) * 1992-03-02 1995-09-13 国税庁長官 酵母による異種タンパク質の発現及び生産量増大培養法
JPH06763A (ja) * 1992-06-19 1994-01-11 Furukawa Electric Co Ltd:The 半導体ウェハの研磨方法
US5310455A (en) * 1992-07-10 1994-05-10 Lsi Logic Corporation Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers
US5499733A (en) * 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
DE69325756T2 (de) * 1992-09-24 2000-03-02 Ebara Corp Poliergerät
JP3370112B2 (ja) * 1992-10-12 2003-01-27 不二越機械工業株式会社 ウエハーの研磨装置
US5433650A (en) * 1993-05-03 1995-07-18 Motorola, Inc. Method for polishing a substrate
JP3311116B2 (ja) * 1993-10-28 2002-08-05 株式会社東芝 半導体製造装置
US5449316A (en) * 1994-01-05 1995-09-12 Strasbaugh; Alan Wafer carrier for film planarization
JP3251419B2 (ja) * 1994-03-18 2002-01-28 三菱マテリアルシリコン株式会社 半導体ウェーハの研磨用定盤
JP2616736B2 (ja) * 1995-01-25 1997-06-04 日本電気株式会社 ウエーハ研磨装置
JP3158934B2 (ja) * 1995-02-28 2001-04-23 三菱マテリアル株式会社 ウェーハ研磨装置
JPH08323615A (ja) * 1995-05-30 1996-12-10 Kyocera Corp 研磨装置

Also Published As

Publication number Publication date
CN1138745A (zh) 1996-12-25
CN1494982A (zh) 2004-05-12
TW400567B (en) 2000-08-01
EP0737546B1 (de) 2001-02-28
EP0737546A3 (de) 1997-01-29
CN1141202C (zh) 2004-03-10
TW353203B (en) 1999-02-21
KR100209383B1 (ko) 1999-07-15
US5791973A (en) 1998-08-11
US5921853A (en) 1999-07-13
DE69611851D1 (de) 2001-04-05
CA2173639A1 (en) 1996-10-11
EP0737546A2 (de) 1996-10-16
TW348279B (en) 1998-12-21
KR960039173A (ko) 1996-11-21

Similar Documents

Publication Publication Date Title
DE69611851T2 (de) Haltevorrichtung für ein Substrat und Verfahren und Vorrichtung zum Polieren eines Substrates
DE69832011D1 (de) Vorrichtung und Verfahren zum Waschen eines Substrats
ATA912097A (de) Halteeinrichtungen und verfahren zum positionieren mehrerer gegenstände auf einem substrat
DE59813331D1 (de) Verfahren und einrichtung zum vakuumbeschichten eines substrates
DE69407088T2 (de) Verfahren zum Polieren eines Substrats
DE69406041T2 (de) Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats
DE69433903D1 (de) Halteverfahren und Haltesystem für ein Substrat
DE69943161D1 (de) Vorrichtung und verfahren zum auftragen einer heiss-siegelbaren schicht auf ein substrat
DE69927111D1 (de) Verfahren und Vorrichtung zum Polieren von Substraten
DE69724915D1 (de) Vorrichtung und Verfahren zum Waschen eines Substrats
DE69521531T2 (de) Verfahren und vorrichtung zum beschichten mit einer dünnen flüssigen beschichtung
DE69627357D1 (de) Verfahren und vorrichtung zur trocknung eines beschichteten substrats
DE69811539T2 (de) Verfahren und vorrichtung zum aufbringen einer diskontinuierlichen beschichtung auf ein substrat
DE59913661D1 (de) Vorrichtung und Verfahren zum Beschichten eines ebenen Substrates
DE50013119D1 (de) Einrichtung und Verfahren zum Einbringen verschiedener transparenter Substrate in ein hochgenaues Messgerät
DE59611403D1 (de) Vorrichtung zum Beschichten eines Substrats
DE69618882D1 (de) Verfahren und Vorrichtung zum Polieren von Halbleitersubstraten
DE69837912D1 (de) Vorrichtung und verfahren zum auftrag einer dünnen schicht und verfahren zur herstellung eines lcd-elementes
DE69624009D1 (de) Verfahren und vorrichtung zur platzierung eines fadens auf einem substrat
DE69810431D1 (de) Beschichtetes Substrat aus Superlegierung und Verfahren zum Beschichten eines Superlegierungssubstrates
DE69425221T2 (de) Verfahren und Vorrichtung zum Beschichten von flächigen Trägern unter Verwendung eines oszillierenden Futters
DE19882821T1 (de) Verfahren und Vorrichtung zum Modelieren eines chemisch-mechanischen Polierprozesses
DE69423945D1 (de) Verfahren zum Reinigen eines Substrates
DE69712955D1 (de) Verfahren zum Detektieren von Kristalldefekten in Silizium-Einkristallsubstraten
DE69422770D1 (de) Verfahren und vorrichtung zum beschichten eines glassubstrates

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP