DE69619112D1 - Verbesserte positive Ladungspumpe - Google Patents

Verbesserte positive Ladungspumpe

Info

Publication number
DE69619112D1
DE69619112D1 DE69619112T DE69619112T DE69619112D1 DE 69619112 D1 DE69619112 D1 DE 69619112D1 DE 69619112 T DE69619112 T DE 69619112T DE 69619112 T DE69619112 T DE 69619112T DE 69619112 D1 DE69619112 D1 DE 69619112D1
Authority
DE
Germany
Prior art keywords
charge pump
positive charge
improved positive
improved
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619112T
Other languages
English (en)
Inventor
Andrea Ghilardelli
Jacopo Mulatti
Stefano Ghezzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69619112D1 publication Critical patent/DE69619112D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
DE69619112T 1996-10-11 1996-10-11 Verbesserte positive Ladungspumpe Expired - Lifetime DE69619112D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830521A EP0836268B1 (de) 1996-10-11 1996-10-11 Verbesserte positive Ladungspumpe

Publications (1)

Publication Number Publication Date
DE69619112D1 true DE69619112D1 (de) 2002-03-21

Family

ID=8226029

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619112T Expired - Lifetime DE69619112D1 (de) 1996-10-11 1996-10-11 Verbesserte positive Ladungspumpe

Country Status (3)

Country Link
US (1) US6075402A (de)
EP (1) EP0836268B1 (de)
DE (1) DE69619112D1 (de)

Families Citing this family (48)

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US6353356B1 (en) * 1999-08-30 2002-03-05 Micron Technology, Inc. High voltage charge pump circuits
JP2001145335A (ja) * 1999-11-11 2001-05-25 Nec Corp 昇圧回路
US6191963B1 (en) * 2000-01-19 2001-02-20 Lucent Technologies Inc. Charge pump with no diode drop at output stage
IT1319841B1 (it) 2000-02-15 2003-11-03 St Microelectronics Srl Dispositivo survoltore bidirezionale ad elevata efficienza.
JP3614747B2 (ja) * 2000-03-07 2005-01-26 Ｎｅｃエレクトロニクス株式会社 昇圧回路、それを搭載したｉｃカード及びそれを搭載した電子機器
US6833752B2 (en) 2000-04-28 2004-12-21 Micron Technology, Inc. High output high efficiency low voltage charge pump
US6801076B1 (en) * 2000-04-28 2004-10-05 Micron Technology, Inc. High output high efficiency low voltage charge pump
US6359500B1 (en) * 2000-12-11 2002-03-19 Stmicroelectronics S.R.L. Charge pump with efficient switching techniques
DE10064819A1 (de) 2000-12-22 2002-07-18 Koninkl Philips Electronics Nv Adaptive Phasensteuerung für Ladungspumpen
US6677805B2 (en) * 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6577514B2 (en) 2001-04-05 2003-06-10 Saifun Semiconductors Ltd. Charge pump with constant boosted output voltage
DE10137698A1 (de) * 2001-08-01 2003-02-27 Infineon Technologies Ag Verfahren und integrierte Schaltung zur Erhöhung einer Spannung
US6646493B2 (en) 2001-08-14 2003-11-11 Micron Technology, Inc. Voltage charge pump with circuit to prevent pass device latch-up
US6577552B2 (en) 2001-08-30 2003-06-10 Micron Technology, Inc. Apparatus and method for generating an oscillating signal
US6791396B2 (en) * 2001-10-24 2004-09-14 Saifun Semiconductors Ltd. Stack element circuit
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US20040151032A1 (en) * 2003-01-30 2004-08-05 Yan Polansky High speed and low noise output buffer
US6842383B2 (en) 2003-01-30 2005-01-11 Saifun Semiconductors Ltd. Method and circuit for operating a memory cell using a single charge pump
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US6885244B2 (en) 2003-03-24 2005-04-26 Saifun Semiconductors Ltd. Operational amplifier with fast rise time
US6906966B2 (en) 2003-06-16 2005-06-14 Saifun Semiconductors Ltd. Fast discharge for program and verification
US7050319B2 (en) * 2003-12-03 2006-05-23 Micron Technology, Inc. Memory architecture and method of manufacture and operation thereof
US8339102B2 (en) * 2004-02-10 2012-12-25 Spansion Israel Ltd System and method for regulating loading on an integrated circuit power supply
US7176728B2 (en) * 2004-02-10 2007-02-13 Saifun Semiconductors Ltd High voltage low power driver
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7256438B2 (en) * 2004-06-08 2007-08-14 Saifun Semiconductors Ltd MOS capacitor with reduced parasitic capacitance
US7187595B2 (en) * 2004-06-08 2007-03-06 Saifun Semiconductors Ltd. Replenishment for internal voltage
US7190212B2 (en) * 2004-06-08 2007-03-13 Saifun Semiconductors Ltd Power-up and BGREF circuitry
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7248096B2 (en) 2004-11-22 2007-07-24 Stmicroelectronics S.R.L. Charge pump circuit with dynamic biasing of pass transistors
US7561866B2 (en) * 2005-02-22 2009-07-14 Impinj, Inc. RFID tags with power rectifiers that have bias
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7786512B2 (en) 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7683698B2 (en) * 2007-08-20 2010-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for increasing charge pump efficiency
US9379103B2 (en) 2012-10-17 2016-06-28 Semtech Corporation Semiconductor device and method of preventing latch-up in a charge pump circuit
US9343961B1 (en) * 2013-09-13 2016-05-17 Qualtre, Inc. Ultrahigh voltage charge pump apparatus implemented with low voltage technology
CN103872903B (zh) * 2014-03-11 2016-08-17 中山芯达电子科技有限公司 堆叠式电压发生器
US10713549B1 (en) * 2017-05-23 2020-07-14 Impinj, Inc. RFID tag rectifiers with bias current reuse
US11188803B1 (en) 2019-03-07 2021-11-30 Impinj, Inc. Rectifier backflow reduction via biasing

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445157A (en) * 1987-08-13 1989-02-17 Toshiba Corp Semiconductor integrated circuit
IT1221261B (it) * 1988-06-28 1990-06-27 Sgs Thomson Microelectronics Moltiplicatore di tensione omos
IT1246238B (it) * 1990-02-16 1994-11-17 Sgs Thomson Microelectronics Oscillatore a fasi survoltate per il pilotaggio di un moltiplicatore di tensione
CA2034400A1 (en) * 1990-04-30 1991-10-31 James Vincent Crivello Method for making triarylsulfonium hexafluorometal or metalloid salts
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
FR2696598B1 (fr) * 1992-10-01 1994-11-04 Sgs Thomson Microelectronics Circuit élévateur de tension de type pompe de charge avec oscillateur bootstrapé.
JP3307453B2 (ja) * 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路

Also Published As

Publication number Publication date
US6075402A (en) 2000-06-13
EP0836268A1 (de) 1998-04-15
EP0836268B1 (de) 2002-02-06

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Legal Events

Date Code Title Description
8332 No legal effect for de