DE69619610T2 - Verfahren zum Herstellen eines Kondensators mit einer ferroelektrischen Schicht für nichtflüchtige Speicherzelle - Google Patents

Verfahren zum Herstellen eines Kondensators mit einer ferroelektrischen Schicht für nichtflüchtige Speicherzelle

Info

Publication number
DE69619610T2
DE69619610T2 DE69619610T DE69619610T DE69619610T2 DE 69619610 T2 DE69619610 T2 DE 69619610T2 DE 69619610 T DE69619610 T DE 69619610T DE 69619610 T DE69619610 T DE 69619610T DE 69619610 T2 DE69619610 T2 DE 69619610T2
Authority
DE
Germany
Prior art keywords
capacitor
producing
memory cell
volatile memory
ferroelectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619610T
Other languages
English (en)
Other versions
DE69619610D1 (de
Inventor
Hisayoshi Yamoto
Akihiko Ochiai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69619610D1 publication Critical patent/DE69619610D1/de
Publication of DE69619610T2 publication Critical patent/DE69619610T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
DE69619610T 1995-09-29 1996-09-26 Verfahren zum Herstellen eines Kondensators mit einer ferroelektrischen Schicht für nichtflüchtige Speicherzelle Expired - Lifetime DE69619610T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27678295A JP3417167B2 (ja) 1995-09-29 1995-09-29 半導体メモリ素子のキャパシタ構造及びその形成方法

Publications (2)

Publication Number Publication Date
DE69619610D1 DE69619610D1 (de) 2002-04-11
DE69619610T2 true DE69619610T2 (de) 2002-10-24

Family

ID=17574299

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619610T Expired - Lifetime DE69619610T2 (de) 1995-09-29 1996-09-26 Verfahren zum Herstellen eines Kondensators mit einer ferroelektrischen Schicht für nichtflüchtige Speicherzelle

Country Status (4)

Country Link
US (2) US6355952B1 (de)
EP (1) EP0766319B1 (de)
JP (1) JP3417167B2 (de)
DE (1) DE69619610T2 (de)

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JP2002190581A (ja) * 2000-12-20 2002-07-05 Fujitsu Ltd 半導体装置及びその製造方法
JP2002231903A (ja) * 2001-02-06 2002-08-16 Sanyo Electric Co Ltd 誘電体素子およびその製造方法
JP2002280523A (ja) * 2001-03-16 2002-09-27 Nec Corp 半導体記憶装置とその製造方法
JP2002324893A (ja) * 2001-04-25 2002-11-08 Sharp Corp 半導体記憶装置及びその製造方法
US6900487B2 (en) * 2001-06-29 2005-05-31 Oki Electric Industry Co., Ltd. Wiring layer structure for ferroelectric capacitor
US6773929B2 (en) * 2001-09-14 2004-08-10 Hynix Semiconductor Inc. Ferroelectric memory device and method for manufacturing the same
JP2003152165A (ja) * 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
US6635498B2 (en) * 2001-12-20 2003-10-21 Texas Instruments Incorporated Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etch
US20030224536A1 (en) * 2002-06-04 2003-12-04 Andreas Hilliger Contact formation
JP3836052B2 (ja) * 2002-06-25 2006-10-18 沖電気工業株式会社 半導体素子及びその製造方法
KR100481853B1 (ko) * 2002-07-26 2005-04-11 삼성전자주식회사 확장된 플레이트 라인을 갖는 강유전체 메모리소자 및 그제조방법
JP4636834B2 (ja) * 2002-11-13 2011-02-23 パナソニック株式会社 半導体装置及びその製造方法
KR100531462B1 (ko) * 2003-06-30 2005-11-28 주식회사 하이닉스반도체 엠티피 구조의 캐패시터를 구비하는 강유전체 메모리소자의 제조 방법
JP4659355B2 (ja) * 2003-12-11 2011-03-30 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP4610486B2 (ja) * 2003-12-26 2011-01-12 富士通セミコンダクター株式会社 半導体装置、半導体装置の製造方法
US6982448B2 (en) * 2004-03-18 2006-01-03 Texas Instruments Incorporated Ferroelectric capacitor hydrogen barriers and methods for fabricating the same
JP2006108152A (ja) * 2004-09-30 2006-04-20 Oki Electric Ind Co Ltd 半導体記憶装置
US7180141B2 (en) * 2004-12-03 2007-02-20 Texas Instruments Incorporated Ferroelectric capacitor with parallel resistance for ferroelectric memory
US20060226777A1 (en) * 2005-04-07 2006-10-12 Cunningham David W Incandescent lamp incorporating extended high-reflectivity IR coating and lighting fixture incorporating such an incandescent lamp
WO2007004282A1 (ja) * 2005-07-04 2007-01-11 Fujitsu Limited 半導体装置及びその製造方法
JP2007027537A (ja) * 2005-07-20 2007-02-01 Sharp Corp 可変抵抗素子を備えた半導体記憶装置
KR100814602B1 (ko) * 2006-05-03 2008-03-17 후지쯔 가부시끼가이샤 반도체 장치, 반도체 장치의 제조 방법
JP4665854B2 (ja) * 2006-07-12 2011-04-06 住友金属鉱山株式会社 バルブ金属複合電極箔およびその製造方法
JP5076543B2 (ja) * 2007-02-21 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法

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Also Published As

Publication number Publication date
JP3417167B2 (ja) 2003-06-16
EP0766319A3 (de) 1998-04-22
US6090657A (en) 2000-07-18
DE69619610D1 (de) 2002-04-11
US6355952B1 (en) 2002-03-12
JPH0997883A (ja) 1997-04-08
EP0766319B1 (de) 2002-03-06
EP0766319A2 (de) 1997-04-02

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