DE69620677D1 - AIPSb/InP Einfach-Heteroübergang-Bipolartransistor auf InP Substrat für Hochgeschwindigkeit- und Hochleistungsanwendungen - Google Patents
AIPSb/InP Einfach-Heteroübergang-Bipolartransistor auf InP Substrat für Hochgeschwindigkeit- und HochleistungsanwendungenInfo
- Publication number
- DE69620677D1 DE69620677D1 DE69620677T DE69620677T DE69620677D1 DE 69620677 D1 DE69620677 D1 DE 69620677D1 DE 69620677 T DE69620677 T DE 69620677T DE 69620677 T DE69620677 T DE 69620677T DE 69620677 D1 DE69620677 D1 DE 69620677D1
- Authority
- DE
- Germany
- Prior art keywords
- inp
- aipsb
- bipolar transistor
- heterojunction bipolar
- high speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/468,584 US5610086A (en) | 1995-06-06 | 1995-06-06 | Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69620677D1 true DE69620677D1 (de) | 2002-05-23 |
| DE69620677T2 DE69620677T2 (de) | 2002-11-21 |
Family
ID=23860401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69620677T Expired - Lifetime DE69620677T2 (de) | 1995-06-06 | 1996-05-30 | AIPSb/InP Einfach-Heteroübergang-Bipolartransistor auf InP Substrat für Hochgeschwindigkeit- und Hochleistungsanwendungen |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US5610086A (de) |
| EP (1) | EP0747963B1 (de) |
| JP (1) | JPH09106992A (de) |
| DE (1) | DE69620677T2 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444552B1 (en) | 1999-07-15 | 2002-09-03 | Hrl Laboratories, Llc | Method of reducing the conductivity of a semiconductor and devices made thereby |
| US6670653B1 (en) * | 1999-07-30 | 2003-12-30 | Hrl Laboratories, Llc | InP collector InGaAsSb base DHBT device and method of forming same |
| US6482711B1 (en) * | 1999-10-28 | 2002-11-19 | Hrl Laboratories, Llc | InPSb/InAs BJT device and method of making |
| US6787814B2 (en) * | 2000-06-22 | 2004-09-07 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device and production method thereof |
| US7834396B2 (en) * | 2004-09-01 | 2010-11-16 | Cree Sweden Ab | Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer |
| US9530708B1 (en) | 2013-05-31 | 2016-12-27 | Hrl Laboratories, Llc | Flexible electronic circuit and method for manufacturing same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979271A (en) * | 1973-07-23 | 1976-09-07 | Westinghouse Electric Corporation | Deposition of solid semiconductor compositions and novel semiconductor materials |
| US4695857A (en) * | 1983-06-24 | 1987-09-22 | Nec Corporation | Superlattice semiconductor having high carrier density |
| KR900002687B1 (ko) * | 1985-12-16 | 1990-04-23 | 후지쓰가부시끼가이샤 | Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법 |
| US4821082A (en) * | 1987-10-30 | 1989-04-11 | International Business Machines Corporation | Heterojunction bipolar transistor with substantially aligned energy levels |
| JP2793837B2 (ja) * | 1989-05-10 | 1998-09-03 | 株式会社日立製作所 | 半導体装置の製造方法およびヘテロ接合バイポーラトランジスタ |
| JP2804095B2 (ja) * | 1989-07-10 | 1998-09-24 | 株式会社東芝 | ヘテロ接合バイボーラトランジスタ |
| US5164800A (en) * | 1990-08-30 | 1992-11-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
| JPH05152204A (ja) * | 1991-11-29 | 1993-06-18 | Fujitsu Ltd | Ｉｉｉ−ｖ族化合物半導体 |
| US5349201A (en) * | 1992-05-28 | 1994-09-20 | Hughes Aircraft Company | NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate |
| US5407491A (en) * | 1993-04-08 | 1995-04-18 | University Of Houston | Tandem solar cell with improved tunnel junction |
-
1995
- 1995-06-06 US US08/468,584 patent/US5610086A/en not_active Expired - Lifetime
-
1996
- 1996-05-30 DE DE69620677T patent/DE69620677T2/de not_active Expired - Lifetime
- 1996-05-30 EP EP96108615A patent/EP0747963B1/de not_active Expired - Lifetime
- 1996-06-05 JP JP8143333A patent/JPH09106992A/ja active Pending
- 1996-06-27 US US08/672,210 patent/US5612551A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69620677T2 (de) | 2002-11-21 |
| JPH09106992A (ja) | 1997-04-22 |
| EP0747963B1 (de) | 2002-04-17 |
| US5612551A (en) | 1997-03-18 |
| US5610086A (en) | 1997-03-11 |
| EP0747963A1 (de) | 1996-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |