DE69620953D1 - Einzelelektron-Tunneleffektanordnung und Verfahren zur Herstellung - Google Patents

Einzelelektron-Tunneleffektanordnung und Verfahren zur Herstellung

Info

Publication number
DE69620953D1
DE69620953D1 DE69620953T DE69620953T DE69620953D1 DE 69620953 D1 DE69620953 D1 DE 69620953D1 DE 69620953 T DE69620953 T DE 69620953T DE 69620953 T DE69620953 T DE 69620953T DE 69620953 D1 DE69620953 D1 DE 69620953D1
Authority
DE
Germany
Prior art keywords
manufacture
single electron
tunnel effect
electron tunnel
effect arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69620953T
Other languages
English (en)
Other versions
DE69620953T2 (de
Inventor
Hiroyuki Kado
Yoshio Manabe
Takao Tohda
Ichiro Tanahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69620953D1 publication Critical patent/DE69620953D1/de
Publication of DE69620953T2 publication Critical patent/DE69620953T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
DE69620953T 1995-06-23 1996-06-21 Einzelelektron-Tunneleffektanordnung und Verfahren zur Herstellung Expired - Fee Related DE69620953T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15752295 1995-06-23
JP15752195 1995-06-23

Publications (2)

Publication Number Publication Date
DE69620953D1 true DE69620953D1 (de) 2002-06-06
DE69620953T2 DE69620953T2 (de) 2002-08-29

Family

ID=26484940

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620953T Expired - Fee Related DE69620953T2 (de) 1995-06-23 1996-06-21 Einzelelektron-Tunneleffektanordnung und Verfahren zur Herstellung

Country Status (3)

Country Link
US (1) US5731598A (de)
EP (1) EP0750353B1 (de)
DE (1) DE69620953T2 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369054A (en) 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
EP0836232B1 (de) * 1996-03-26 2003-05-14 Samsung Electronics Co., Ltd. Tunneleffektanordnung und verfahren zur herstellung
FR2749977B1 (fr) * 1996-06-14 1998-10-09 Commissariat Energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci
US6642574B2 (en) 1997-10-07 2003-11-04 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6169308B1 (en) 1996-11-15 2001-01-02 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6060723A (en) * 1997-07-18 2000-05-09 Hitachi, Ltd. Controllable conduction device
US6097223A (en) * 1996-12-11 2000-08-01 Micron Technology, Inc. Drive-current modulated output driver
US5801401A (en) * 1997-01-29 1998-09-01 Micron Technology, Inc. Flash memory with microcrystalline silicon carbide film floating gate
US5754477A (en) * 1997-01-29 1998-05-19 Micron Technology, Inc. Differential flash memory cell and method for programming
US5740104A (en) * 1997-01-29 1998-04-14 Micron Technology, Inc. Multi-state flash memory cell and method for programming single electron differences
FR2762931B1 (fr) * 1997-05-05 1999-06-11 Commissariat Energie Atomique Dispositif a base d'ilots quantiques et procede de fabrication
US6060743A (en) * 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
DE69720441T2 (de) * 1997-09-05 2003-12-24 Hitachi Europ Ltd Bauelement mit gesteuerter Leitung
GB9724642D0 (en) 1997-11-21 1998-01-21 British Tech Group Single electron devices
FR2772989B1 (fr) * 1997-12-19 2003-06-06 Commissariat Energie Atomique Dispositif de memoire multiniveaux a blocage de coulomb, procede de fabrication et procede de lecture/ecriture/ effacement d'un tel dispositif
FR2772984B1 (fr) * 1997-12-19 2003-07-25 Commissariat Energie Atomique Procede de formation d'un reseau regulier d'ilots semi-conducteurs sur un substrat isolant
US6169303B1 (en) * 1998-01-06 2001-01-02 Hewlett-Packard Company Ferromagnetic tunnel junctions with enhanced magneto-resistance
KR100294691B1 (ko) * 1998-06-29 2001-07-12 김영환 다중층양자점을이용한메모리소자및제조방법
US6125062A (en) 1998-08-26 2000-09-26 Micron Technology, Inc. Single electron MOSFET memory device and method
US6141260A (en) 1998-08-27 2000-10-31 Micron Technology, Inc. Single electron resistor memory device and method for use thereof
US6198113B1 (en) 1999-04-22 2001-03-06 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
KR100340929B1 (ko) 1999-11-25 2002-06-20 오길록 금속 초박막을 이용한 단전자 트랜지스터
KR100347673B1 (ko) * 1999-12-31 2002-08-07 한국표준과학연구원 단전자 소자의 제작방법
US6414333B1 (en) * 2000-03-10 2002-07-02 Samsung Electronics Co., Ltd. Single electron transistor using porous silicon
FR2810791A1 (fr) * 2000-06-21 2001-12-28 Commissariat Energie Atomique Oxyde tunnel pourvu de nodules de silicium, son procede de preparation, et dispositifs electroniques comprenant cet oxyde
US7615402B1 (en) 2000-07-07 2009-11-10 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
DE10042663A1 (de) * 2000-08-31 2002-03-14 Deutsche Telekom Ag Eletronenspektrometer
US6770472B2 (en) * 2000-11-17 2004-08-03 The Board Of Trustees Of The Leland Stanford Junior University Direct DNA sequencing with a transcription protein and a nanometer scale electrometer
TW531890B (en) * 2002-02-27 2003-05-11 Ind Tech Res Inst Single electron device fabricated from nanoparticle derivatives
US7105425B1 (en) * 2002-05-16 2006-09-12 Advanced Micro Devices, Inc. Single electron devices formed by laser thermal annealing
JP4808966B2 (ja) * 2002-09-19 2011-11-02 シャープ株式会社 抵抗変化機能体並びにそれを備えたメモリおよび電子機器
KR100558287B1 (ko) * 2002-12-10 2006-03-10 한국전자통신연구원 단전자 소자, 그 제조 방법 및 단전자 소자와 ｍｏｓ트랜지스터를 동시에 형성하는 제조방법
JP4563652B2 (ja) 2003-03-13 2010-10-13 シャープ株式会社 メモリ機能体および微粒子形成方法並びにメモリ素子、半導体装置および電子機器
ITTO20030217A1 (it) * 2003-03-25 2004-09-26 Fiat Ricerche Dispositivo elettronico comprendente un film a struttura
JP4586334B2 (ja) * 2003-05-07 2010-11-24 ソニー株式会社 電界効果型トランジスタ及びその製造方法
KR100545898B1 (ko) * 2003-07-02 2006-01-25 동부아남반도체 주식회사 반도체 소자의 양자점 형성방법
JP3868934B2 (ja) * 2003-08-01 2007-01-17 株式会社東芝 電極製造方法
KR100521433B1 (ko) * 2003-08-12 2005-10-13 동부아남반도체 주식회사 실리콘 양자점의 형성 방법 및 이를 이용한 반도체 메모리소자의 제조 방법
US7122413B2 (en) * 2003-12-19 2006-10-17 Texas Instruments Incorporated Method to manufacture silicon quantum islands and single-electron devices
FR2876498B1 (fr) * 2004-10-12 2008-03-14 Commissariat Energie Atomique Procede de realisation d'heterostructures resonnantes a transport planaire
CN100409454C (zh) * 2005-10-20 2008-08-06 中国科学院半导体研究所 通过注氧进行量子限制的硅基单电子晶体管
US7525147B2 (en) * 2005-11-09 2009-04-28 Nanyang Technological University Memory structure
TWI278072B (en) * 2005-12-28 2007-04-01 Ind Tech Res Inst Nano grain varied-resistance memory
EP1830410A1 (de) * 2006-02-24 2007-09-05 Hitachi, Ltd. Ein-Electron Tunnelbauelement
JP4176785B2 (ja) * 2006-06-02 2008-11-05 株式会社東芝 スイッチング素子、半導体装置及びそれらの製造方法
KR100905869B1 (ko) * 2006-10-10 2009-07-03 충북대학교 산학협력단 상온에서 동작하는 듀얼 게이트 단전자 논리 소자의 제조방법
JP2010028105A (ja) 2008-06-20 2010-02-04 Semiconductor Energy Lab Co Ltd 記憶素子及び記憶素子の作製方法
WO2013082117A1 (en) * 2011-11-28 2013-06-06 Michigan Technological University Room temperature tunneling switches and methods of making and using the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO812051L (no) * 1980-07-07 1982-01-08 Schlumberger Ltd Fremgangsmaate og apparat for undersoekelse av permeabiliteten av grunnformasjoner
US5289408A (en) * 1989-02-09 1994-02-22 Olympus Optical Co., Ltd. Memory apparatus using tunnel current techniques
JP3156307B2 (ja) * 1991-10-15 2001-04-16 株式会社日立製作所 一電子トンネルトランジスタ及びその集積回路
US5181165A (en) * 1991-10-24 1993-01-19 Westinghouse Electric Corp. Panelboard with insulative snap-in support means
JPH05283759A (ja) * 1992-03-31 1993-10-29 Fuji Electric Co Ltd 単一電子トンネルトランジスタ素子の製造方法
GB9213423D0 (en) * 1992-06-24 1992-08-05 Hitachi Europ Ltd Nanofabricated structures
JP2812656B2 (ja) * 1993-08-13 1998-10-22 科学技術振興事業団 一電子トランジスター
US5416040A (en) * 1993-11-15 1995-05-16 Texas Instruments Incorporated Method of making an integrated field effect transistor and resonant tunneling diode
JP3560630B2 (ja) * 1994-02-09 2004-09-02 株式会社日立製作所 単一電子素子

Also Published As

Publication number Publication date
DE69620953T2 (de) 2002-08-29
EP0750353B1 (de) 2002-05-02
US5731598A (en) 1998-03-24
EP0750353A2 (de) 1996-12-27
EP0750353A3 (de) 1997-07-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee