DE69621983D1 - Struktur und Verfahren zur Montage eines Halbleiterchips - Google Patents

Struktur und Verfahren zur Montage eines Halbleiterchips

Info

Publication number
DE69621983D1
DE69621983D1 DE69621983T DE69621983T DE69621983D1 DE 69621983 D1 DE69621983 D1 DE 69621983D1 DE 69621983 T DE69621983 T DE 69621983T DE 69621983 T DE69621983 T DE 69621983T DE 69621983 D1 DE69621983 D1 DE 69621983D1
Authority
DE
Germany
Prior art keywords
assembling
semiconductor chip
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69621983T
Other languages
English (en)
Other versions
DE69621983T2 (de
Inventor
Michio Horiuchi
Yoichi Harayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7082385A external-priority patent/JPH08279576A/ja
Priority claimed from JP7083679A external-priority patent/JPH08279533A/ja
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Application granted granted Critical
Publication of DE69621983D1 publication Critical patent/DE69621983D1/de
Publication of DE69621983T2 publication Critical patent/DE69621983T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3675Cooling facilitated by shape of device characterised by the shape of the housing
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
DE69621983T 1995-04-07 1996-04-04 Struktur und Verfahren zur Montage eines Halbleiterchips Expired - Fee Related DE69621983T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7082385A JPH08279576A (ja) 1995-04-07 1995-04-07 半導体素子の実装構造体及び半導体素子の実装方法
JP7083679A JPH08279533A (ja) 1995-04-10 1995-04-10 半導体装置及び半導体素子搭載用フィルム

Publications (2)

Publication Number Publication Date
DE69621983D1 true DE69621983D1 (de) 2002-08-01
DE69621983T2 DE69621983T2 (de) 2002-11-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621983T Expired - Fee Related DE69621983T2 (de) 1995-04-07 1996-04-04 Struktur und Verfahren zur Montage eines Halbleiterchips

Country Status (3)

Country Link
US (1) US5737191A (de)
EP (1) EP0740340B1 (de)
DE (1) DE69621983T2 (de)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260533A (ja) 1996-03-19 1997-10-03 Hitachi Ltd 半導体装置及びその実装構造
US5928568A (en) * 1996-06-24 1999-07-27 Delco Electonics Corporation Thick film circuit having conductor composition with coated metallic particles
JPH1032275A (ja) * 1996-07-13 1998-02-03 Ricoh Co Ltd 半導体装置およびその製造方法
JP3431406B2 (ja) * 1996-07-30 2003-07-28 株式会社東芝 半導体パッケージ装置
US6011694A (en) * 1996-08-01 2000-01-04 Fuji Machinery Mfg. & Electronics Co., Ltd. Ball grid array semiconductor package with solder ball openings in an insulative base
US6962829B2 (en) * 1996-10-31 2005-11-08 Amkor Technology, Inc. Method of making near chip size integrated circuit package
JP2933554B2 (ja) * 1996-11-28 1999-08-16 九州日本電気株式会社 半導体装置およびその製造方法
DE19649652C2 (de) * 1996-11-29 2000-03-16 Siemens Ag Verfahren zum Herstellen wenigstens einer Schutzschicht auf einem Halbleiterchip oder Wafer
JP3695893B2 (ja) * 1996-12-03 2005-09-14 沖電気工業株式会社 半導体装置とその製造方法および実装方法
US6020221A (en) * 1996-12-12 2000-02-01 Lsi Logic Corporation Process for manufacturing a semiconductor device having a stiffener member
KR100246333B1 (ko) * 1997-03-14 2000-03-15 김영환 비 지 에이 패키지 및 그 제조방법
US6084777A (en) * 1997-04-23 2000-07-04 Texas Instruments Incorporated Ball grid array package
US5866943A (en) * 1997-06-23 1999-02-02 Lsi Logic Corporation System and method for forming a grid array device package employing electomagnetic shielding
US6002171A (en) * 1997-09-22 1999-12-14 Lsi Logic Corporation Integrated heat spreader/stiffener assembly and method of assembly for semiconductor package
US6166434A (en) * 1997-09-23 2000-12-26 Lsi Logic Corporation Die clip assembly for semiconductor package
US5909057A (en) * 1997-09-23 1999-06-01 Lsi Logic Corporation Integrated heat spreader/stiffener with apertures for semiconductor package
US6172413B1 (en) * 1997-10-09 2001-01-09 Micron Technology, Inc. Chip leads constrained in dielectric media
US5965944A (en) * 1997-11-12 1999-10-12 International Business Machines Corporation Printed circuit boards for mounting a semiconductor integrated circuit die
US5942798A (en) * 1997-11-24 1999-08-24 Stmicroelectronics, Inc. Apparatus and method for automating the underfill of flip-chip devices
JP3367886B2 (ja) * 1998-01-20 2003-01-20 株式会社村田製作所 電子回路装置
US6097101A (en) * 1998-01-30 2000-08-01 Shinko Electric Industries Co., Ltd. Package for semiconductor device having frame-like molded portion and producing method of the same
JP3481117B2 (ja) * 1998-02-25 2003-12-22 富士通株式会社 半導体装置及びその製造方法
EP0942392A3 (de) * 1998-03-13 2000-10-18 Kabushiki Kaisha Toshiba Chipkarte
US6191487B1 (en) 1998-04-23 2001-02-20 Minco Technology Labs, Inc. Semiconductor and flip chip packages and method having a back-side connection
KR100277438B1 (ko) * 1998-05-28 2001-02-01 윤종용 멀티칩패키지
US6404067B1 (en) 1998-06-01 2002-06-11 Intel Corporation Plastic ball grid array package with improved moisture resistance
US6081037A (en) * 1998-06-22 2000-06-27 Motorola, Inc. Semiconductor component having a semiconductor chip mounted to a chip mount
JP2000100985A (ja) * 1998-09-17 2000-04-07 Nitto Denko Corp 半導体素子実装用基板およびその製造方法と用途
US6248951B1 (en) * 1999-01-05 2001-06-19 Intel Corporation Dielectric decal for a substrate of an integrated circuit package
TW432650B (en) 1999-04-16 2001-05-01 Cts Comp Technology System Cor Semiconductor chip device and the manufacturing method thereof
US6528343B1 (en) * 1999-05-12 2003-03-04 Hitachi, Ltd. Semiconductor device its manufacturing method and electronic device
US6594156B1 (en) * 2000-04-24 2003-07-15 Minimed Inc. Device and method for circuit protection during radiation sterilization
EP1061574A1 (de) * 1999-06-17 2000-12-20 Ming-Tung Shen Halbleiteranordnung und Herstellungsverfahren dafür
EP1065718A1 (de) * 1999-06-17 2001-01-03 Ming-Tung Shen Halbleiterchipmodul und Herstellungsverfahren dafür
JP2001044332A (ja) 1999-08-03 2001-02-16 Shinko Electric Ind Co Ltd 半導体装置
TW561799B (en) * 1999-08-11 2003-11-11 Fujikura Ltd Chip assembly module of bump connection type using a multi-layer printed circuit substrate
JP2001077301A (ja) * 1999-08-24 2001-03-23 Amkor Technology Korea Inc 半導体パッケージ及びその製造方法
US6281437B1 (en) 1999-11-10 2001-08-28 International Business Machines Corporation Method of forming an electrical connection between a conductive member having a dual thickness substrate and a conductor and electronic package including said connection
JP2001291802A (ja) * 2000-04-06 2001-10-19 Shinko Electric Ind Co Ltd 配線基板及びその製造方法ならびに半導体装置
JP2002033411A (ja) * 2000-07-13 2002-01-31 Nec Corp ヒートスプレッダ付き半導体装置及びその製造方法
DE10107399A1 (de) * 2001-02-14 2002-09-12 Infineon Technologies Ag Elektronisches Bauteil mit Kantenschutz
EP1263043A1 (de) * 2001-05-30 2002-12-04 Alcatel Elektronisches Element mit Abschirmung
KR100431180B1 (ko) * 2001-12-07 2004-05-12 삼성전기주식회사 표면 탄성파 필터 패키지 제조방법
US6617524B2 (en) * 2001-12-11 2003-09-09 Motorola, Inc. Packaged integrated circuit and method therefor
DE10164502B4 (de) 2001-12-28 2013-07-04 Epcos Ag Verfahren zur hermetischen Verkapselung eines Bauelements
JP2003298220A (ja) * 2002-03-29 2003-10-17 Hitachi Ltd 回路基板および電子機器、およびそれらの製造方法
JP4357817B2 (ja) * 2002-09-12 2009-11-04 パナソニック株式会社 回路部品内蔵モジュール
EP1616337A2 (de) * 2003-04-02 2006-01-18 Honeywell International, Inc. Thermische verbindungs- und grenzflächensysteme, herstellungsverfahren und verwendungen davon
US20050247761A1 (en) * 2004-05-04 2005-11-10 Albanese Patricia M Surface mount attachment of components
JP2007527105A (ja) * 2003-06-06 2007-09-20 ハネウエル・インターナシヨナル・インコーポレーテツド 熱連結システムとその製造方法
DE10329329B4 (de) * 2003-06-30 2005-08-18 Siemens Ag Hochfrequenz-Gehäuse und Verfahren zu seiner Herstellung
US7294533B2 (en) * 2003-06-30 2007-11-13 Intel Corporation Mold compound cap in a flip chip multi-matrix array package and process of making same
US20050056458A1 (en) * 2003-07-02 2005-03-17 Tsuyoshi Sugiura Mounting pad, package, device, and method of fabricating the device
TWI228804B (en) * 2003-07-02 2005-03-01 Lite On Semiconductor Corp Chip package substrate having flexible printed circuit board and method for fabricating the same
JP3811160B2 (ja) * 2004-03-09 2006-08-16 株式会社東芝 半導体装置
US7160758B2 (en) * 2004-03-31 2007-01-09 Intel Corporation Electronic packaging apparatus and method
KR20060001352A (ko) * 2004-06-30 2006-01-06 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
US7183657B2 (en) * 2004-09-23 2007-02-27 Texas Instruments Incorporated Semiconductor device having resin anti-bleed feature
KR100608610B1 (ko) * 2004-12-20 2006-08-08 삼성전자주식회사 인쇄회로기판과, 그의 제조 방법 및 그를 이용한 반도체패키지
TW200631144A (en) * 2005-02-18 2006-09-01 Mitac Technology Corp Chip heat dissipation structure and manufacturing method thereof
JP4860994B2 (ja) * 2005-12-06 2012-01-25 ルネサスエレクトロニクス株式会社 半導体装置
US7485502B2 (en) * 2006-01-31 2009-02-03 Stats Chippac Ltd. Integrated circuit underfill package system
TWI300679B (en) * 2006-02-22 2008-09-01 Au Optronics Corp Assembly of fpc and electric component
US8742602B2 (en) * 2007-03-16 2014-06-03 Invensas Corporation Vertical electrical interconnect formed on support prior to die mount
US8723332B2 (en) * 2007-06-11 2014-05-13 Invensas Corporation Electrically interconnected stacked die assemblies
FR2919426B1 (fr) * 2007-07-23 2009-12-11 Commissariat Energie Atomique Procede d'enrobage de deux elements hybrides entre eux au moyen d'un materiau de brasure
WO2009035849A2 (en) 2007-09-10 2009-03-19 Vertical Circuits, Inc. Semiconductor die mount by conformal die coating
JP2009081279A (ja) * 2007-09-26 2009-04-16 Sanyo Electric Co Ltd 混成集積回路装置
US20090091021A1 (en) * 2007-10-03 2009-04-09 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
US7906860B2 (en) * 2007-10-26 2011-03-15 Infineon Technologies Ag Semiconductor device
US9147665B2 (en) * 2007-11-06 2015-09-29 Fairchild Semiconductor Corporation High bond line thickness for semiconductor devices
WO2009114670A2 (en) 2008-03-12 2009-09-17 Vertical Circuits, Inc. Support mounted electrically interconnected die assembly
US9153517B2 (en) 2008-05-20 2015-10-06 Invensas Corporation Electrical connector between die pad and z-interconnect for stacked die assemblies
US7863159B2 (en) * 2008-06-19 2011-01-04 Vertical Circuits, Inc. Semiconductor die separation method
US8680687B2 (en) * 2009-06-26 2014-03-25 Invensas Corporation Electrical interconnect for die stacked in zig-zag configuration
US9433105B2 (en) * 2009-08-25 2016-08-30 International Business Machines Corporation Method of fabricating printed circuit boards
US9147583B2 (en) 2009-10-27 2015-09-29 Invensas Corporation Selective die electrical insulation by additive process
TWI544604B (zh) 2009-11-04 2016-08-01 英維瑟斯公司 具有降低應力電互連的堆疊晶粒總成
US8299633B2 (en) * 2009-12-21 2012-10-30 Advanced Micro Devices, Inc. Semiconductor chip device with solder diffusion protection
US8193040B2 (en) * 2010-02-08 2012-06-05 Infineon Technologies Ag Manufacturing of a device including a semiconductor chip
KR101067216B1 (ko) * 2010-05-24 2011-09-22 삼성전기주식회사 인쇄회로기판 및 이를 구비하는 반도체 패키지
DE102011003195B4 (de) * 2011-01-26 2019-01-10 Robert Bosch Gmbh Bauteil und Verfahren zum Herstellen eines Bauteils
US9658000B2 (en) 2012-02-15 2017-05-23 Abaco Systems, Inc. Flexible metallic heat connector
JP5725055B2 (ja) * 2013-02-12 2015-05-27 株式会社デンソー 電子制御ユニット
US9490195B1 (en) 2015-07-17 2016-11-08 Invensas Corporation Wafer-level flipped die stacks with leadframes or metal foil interconnects
US9825002B2 (en) 2015-07-17 2017-11-21 Invensas Corporation Flipped die stack
US9871019B2 (en) 2015-07-17 2018-01-16 Invensas Corporation Flipped die stack assemblies with leadframe interconnects
US9508691B1 (en) 2015-12-16 2016-11-29 Invensas Corporation Flipped die stacks with multiple rows of leadframe interconnects
US10566310B2 (en) 2016-04-11 2020-02-18 Invensas Corporation Microelectronic packages having stacked die and wire bond interconnects
US9595511B1 (en) 2016-05-12 2017-03-14 Invensas Corporation Microelectronic packages and assemblies with improved flyby signaling operation
US9728524B1 (en) 2016-06-30 2017-08-08 Invensas Corporation Enhanced density assembly having microelectronic packages mounted at substantial angle to board
US11152274B2 (en) * 2017-09-11 2021-10-19 Advanced Semiconductor Engineering, Inc. Multi-moldings fan-out package and process
US11244876B2 (en) 2019-10-09 2022-02-08 Microchip Technology Inc. Packaged semiconductor die with micro-cavity

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144220A (en) * 1977-05-23 1978-12-15 Hitachi Ltd Automatic adjuster for color purity of color television
US4323914A (en) * 1979-02-01 1982-04-06 International Business Machines Corporation Heat transfer structure for integrated circuit package
JPH0196952A (ja) * 1987-10-09 1989-04-14 Hitachi Ltd 気密封止チツプキヤリア
JPH063819B2 (ja) * 1989-04-17 1994-01-12 セイコーエプソン株式会社 半導体装置の実装構造および実装方法
JPH02288255A (ja) * 1989-04-28 1990-11-28 Hitachi Ltd 半導体装置
JPH0432251A (ja) * 1990-05-29 1992-02-04 Hitachi Ltd 半導体パッケージ及びその製造方法
JPH04122053A (ja) * 1990-09-12 1992-04-22 Fujitsu Ltd 半導体チップの実装方法
JPH0582584A (ja) * 1991-09-19 1993-04-02 Nec Corp 半導体装置
JPH0661383A (ja) * 1992-08-11 1994-03-04 Fujitsu Ltd 半導体装置
EP0603928A1 (de) * 1992-12-21 1994-06-29 Delco Electronics Corporation Hybridschaltung

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EP0740340A2 (de) 1996-10-30

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