DE69622782D1 - Verbindungshalbleiteranordnung mit vermindertem Widerstand - Google Patents

Verbindungshalbleiteranordnung mit vermindertem Widerstand

Info

Publication number
DE69622782D1
DE69622782D1 DE69622782T DE69622782T DE69622782D1 DE 69622782 D1 DE69622782 D1 DE 69622782D1 DE 69622782 T DE69622782 T DE 69622782T DE 69622782 T DE69622782 T DE 69622782T DE 69622782 D1 DE69622782 D1 DE 69622782D1
Authority
DE
Germany
Prior art keywords
semiconductor device
compound semiconductor
reduced resistance
resistance
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69622782T
Other languages
English (en)
Other versions
DE69622782T2 (de
Inventor
Kenji Imanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69622782D1 publication Critical patent/DE69622782D1/de
Publication of DE69622782T2 publication Critical patent/DE69622782T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
DE69622782T 1995-04-25 1996-03-08 Verbindungshalbleiteranordnung mit vermindertem Widerstand Expired - Lifetime DE69622782T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09918995A JP3368452B2 (ja) 1995-04-25 1995-04-25 化合物半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69622782D1 true DE69622782D1 (de) 2002-09-12
DE69622782T2 DE69622782T2 (de) 2002-11-28

Family

ID=14240707

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69622782T Expired - Lifetime DE69622782T2 (de) 1995-04-25 1996-03-08 Verbindungshalbleiteranordnung mit vermindertem Widerstand

Country Status (5)

Country Link
US (2) US5682040A (de)
EP (1) EP0740350B1 (de)
JP (1) JP3368452B2 (de)
CN (1) CN1086514C (de)
DE (1) DE69622782T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3373386B2 (ja) * 1997-03-19 2003-02-04 富士通株式会社 半導体装置及びその製造方法
US6737684B1 (en) 1998-02-20 2004-05-18 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and semiconductor device
JP3594482B2 (ja) * 1998-04-02 2004-12-02 三菱電機株式会社 ヘテロ接合バイポーラトランジスタ
JP3252805B2 (ja) 1998-08-20 2002-02-04 日本電気株式会社 バイポーラトランジスタ
US6368930B1 (en) 1998-10-02 2002-04-09 Ziptronix Self aligned symmetric process and device
JP3371871B2 (ja) 1999-11-16 2003-01-27 日本電気株式会社 半導体装置の製造方法
TW440968B (en) * 2000-01-10 2001-06-16 Nat Science Council Heterojunction bipolar transistor device with sun-hat-shaped negative differential resistance characteristic
JP4808298B2 (ja) * 2000-01-21 2011-11-02 富士通株式会社 半導体装置及びその製造方法
US6580139B1 (en) 2000-07-20 2003-06-17 Emcore Corporation Monolithically integrated sensing device and method of manufacture
JP3453558B2 (ja) * 2000-12-25 2003-10-06 松下電器産業株式会社 窒化物半導体素子
EP1274133A3 (de) * 2001-07-04 2003-01-22 Sumitomo Chemical Company, Limited Dünnschicht-Kristallwafer mit einem pn Übergang und Verfahren zur Herstellung
JP3652633B2 (ja) * 2001-10-02 2005-05-25 松下電器産業株式会社 ヘテロ接合バイポーラトランジスタの製造方法
DE10253160A1 (de) * 2002-08-29 2004-03-11 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
DE10306309A1 (de) * 2003-02-14 2004-09-09 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektromagnetische Strahlung emittierenden Halbleiterchips und elektromagnetische Strahlung emittierender Halbleiterchip
JP4906256B2 (ja) * 2004-11-10 2012-03-28 株式会社沖データ 半導体複合装置の製造方法
US7397062B2 (en) * 2005-09-13 2008-07-08 Sumika Electronic Materials, Inc. Heterojunction bipolar transistor with improved current gain
US8716835B2 (en) * 2008-10-21 2014-05-06 Renesas Electronics Corporation Bipolar transistor
TW201301481A (zh) * 2011-06-23 2013-01-01 Kopin Corp 雙極高電子遷移率電晶體及其形成方法
JP2019054120A (ja) * 2017-09-15 2019-04-04 株式会社村田製作所 バイポーラトランジスタ及び高周波パワーアンプモジュール

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060234A (en) * 1984-11-19 1991-10-22 Max-Planck Gesellschaft Zur Forderung Der Wissenschaften Injection laser with at least one pair of monoatomic layers of doping atoms
EP0391380B1 (de) * 1989-04-04 1997-12-17 Siemens Aktiengesellschaft HEMT-Struktur
US5100831A (en) * 1990-02-16 1992-03-31 Sumitomo Electric Industries, Ltd. Method for fabricating semiconductor device
DE69227712T2 (de) * 1991-03-15 1999-06-24 Koninkl Philips Electronics Nv Verfahren zur Realisierung eines Transistors mit hoher Elektronenbeweglichkeit
JP2560562B2 (ja) * 1991-04-30 1996-12-04 住友化学工業株式会社 エピタキシャル成長化合物半導体結晶
US5364816A (en) * 1993-01-29 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Fabrication method for III-V heterostructure field-effect transistors

Also Published As

Publication number Publication date
DE69622782T2 (de) 2002-11-28
US5856209A (en) 1999-01-05
JPH08293505A (ja) 1996-11-05
EP0740350B1 (de) 2002-08-07
CN1137688A (zh) 1996-12-11
CN1086514C (zh) 2002-06-19
JP3368452B2 (ja) 2003-01-20
US5682040A (en) 1997-10-28
EP0740350A1 (de) 1996-10-30

Similar Documents

Publication Publication Date Title
DE69321266D1 (de) Halbleiteranordnung mit Überchipanschlüssen
DE69637366D1 (de) Halbleiteranordnung mit isoliertem Gate
DE69610457T2 (de) Halbleitervorrichtung
KR970004020A (ko) 반도체장치
KR970005998A (ko) 반도체 장치
DE69838310D1 (de) Halbleitervorrichtung mit J-förmig gebogenen Aussenleitern
DE69532097D1 (de) Erweiterungsvorrichtung mit Halte/Fortsetzungsfunktion
DE69414498T2 (de) Licht-emittierende Halbleitervorrichtung
DE69633737D1 (de) Vorrichtung mit halbleiter
DE69622782T2 (de) Verbindungshalbleiteranordnung mit vermindertem Widerstand
DE69631940D1 (de) Halbleitervorrichtung
DE69400694T2 (de) Halbleitervorrichtung
DE59508581D1 (de) Halbleiterbauelement
DE69501381D1 (de) Halbleitergerät
DE69513207T2 (de) Halbleitervorrichtung
DE69635180D1 (de) Lichtemittierende Halbleitervorrichtung
DE19681689T1 (de) Gesichertes Halbleiterbauelement
DE69409341D1 (de) Halbleitervorrichtung mit Fotodioden
DE4496282T1 (de) Halbleiter-Einrichtung
FI960247A0 (fi) Puolijohdelaite, johon kuuluu schottky-liitos
NO954863D0 (no) Halvlederanordning
DE69635334D1 (de) Halbleiteranordnung
KR970025773U (ko) 반도체 장치
KR970003228U (ko) 반도체 장치
KR970046985U (ko) 보강대를 구비한 반도체 장치

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE