DE69625207T2 - Speichersystem mit nicht-flüchtiger datenspeicherstruktur für speichersteuerungsparameter und verfahren dafür - Google Patents

Speichersystem mit nicht-flüchtiger datenspeicherstruktur für speichersteuerungsparameter und verfahren dafür

Info

Publication number
DE69625207T2
DE69625207T2 DE69625207T DE69625207T DE69625207T2 DE 69625207 T2 DE69625207 T2 DE 69625207T2 DE 69625207 T DE69625207 T DE 69625207T DE 69625207 T DE69625207 T DE 69625207T DE 69625207 T2 DE69625207 T2 DE 69625207T2
Authority
DE
Germany
Prior art keywords
memory
storage
volatile data
control parameters
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69625207T
Other languages
English (en)
Other versions
DE69625207D1 (de
Inventor
F Roohparvar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69625207D1 publication Critical patent/DE69625207D1/de
Publication of DE69625207T2 publication Critical patent/DE69625207T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
DE69625207T 1995-07-28 1996-07-09 Speichersystem mit nicht-flüchtiger datenspeicherstruktur für speichersteuerungsparameter und verfahren dafür Expired - Lifetime DE69625207T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/508,923 US5627784A (en) 1995-07-28 1995-07-28 Memory system having non-volatile data storage structure for memory control parameters and method
PCT/US1996/011388 WO1997005621A1 (en) 1995-07-28 1996-07-09 Memory system having non-volatile data storage structure for memory control parameters and method

Publications (2)

Publication Number Publication Date
DE69625207D1 DE69625207D1 (de) 2003-01-16
DE69625207T2 true DE69625207T2 (de) 2003-08-28

Family

ID=24024616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69625207T Expired - Lifetime DE69625207T2 (de) 1995-07-28 1996-07-09 Speichersystem mit nicht-flüchtiger datenspeicherstruktur für speichersteuerungsparameter und verfahren dafür

Country Status (7)

Country Link
US (2) US5627784A (de)
EP (1) EP0842515B1 (de)
KR (1) KR100301913B1 (de)
AT (1) ATE229220T1 (de)
AU (1) AU6675196A (de)
DE (1) DE69625207T2 (de)
WO (1) WO1997005621A1 (de)

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Also Published As

Publication number Publication date
WO1997005621A1 (en) 1997-02-13
US5880996A (en) 1999-03-09
KR100301913B1 (ko) 2001-11-14
EP0842515A1 (de) 1998-05-20
US5627784A (en) 1997-05-06
KR19990035979A (ko) 1999-05-25
DE69625207D1 (de) 2003-01-16
AU6675196A (en) 1997-02-26
EP0842515B1 (de) 2002-12-04
EP0842515A4 (de) 1999-09-01
ATE229220T1 (de) 2002-12-15

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