DE69628903D1 - Plasmareaktoren für die Bearbeitung von Halbleiterscheiben - Google Patents

Plasmareaktoren für die Bearbeitung von Halbleiterscheiben

Info

Publication number
DE69628903D1
DE69628903D1 DE69628903T DE69628903T DE69628903D1 DE 69628903 D1 DE69628903 D1 DE 69628903D1 DE 69628903 T DE69628903 T DE 69628903T DE 69628903 T DE69628903 T DE 69628903T DE 69628903 D1 DE69628903 D1 DE 69628903D1
Authority
DE
Germany
Prior art keywords
semiconductor wafers
processing semiconductor
plasma reactors
reactors
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69628903T
Other languages
English (en)
Other versions
DE69628903T2 (de
Inventor
Peter K Loewenhardt
Gerald Zheyao Yin
Philip M Salzman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69628903D1 publication Critical patent/DE69628903D1/de
Application granted granted Critical
Publication of DE69628903T2 publication Critical patent/DE69628903T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
DE69628903T 1996-01-24 1996-12-24 Plasmareaktoren für die Bearbeitung von Halbleiterscheiben Expired - Fee Related DE69628903T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59099896A 1996-01-24 1996-01-24
US590998 1996-01-24

Publications (2)

Publication Number Publication Date
DE69628903D1 true DE69628903D1 (de) 2003-08-07
DE69628903T2 DE69628903T2 (de) 2004-06-03

Family

ID=24364615

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69628903T Expired - Fee Related DE69628903T2 (de) 1996-01-24 1996-12-24 Plasmareaktoren für die Bearbeitung von Halbleiterscheiben

Country Status (6)

Country Link
US (3) US6030486A (de)
EP (2) EP1071113A2 (de)
JP (1) JPH09219397A (de)
KR (1) KR100362596B1 (de)
DE (1) DE69628903T2 (de)
TW (1) TW303480B (de)

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US20040129218A1 (en) * 2001-12-07 2004-07-08 Toshiki Takahashi Exhaust ring mechanism and plasma processing apparatus using the same
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US7458335B1 (en) 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
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US7394339B1 (en) 2004-06-30 2008-07-01 Kla-Tencor Technologies Corporation Transverse magnetic field voltage isolator
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US7651587B2 (en) * 2005-08-11 2010-01-26 Applied Materials, Inc. Two-piece dome with separate RF coils for inductively coupled plasma reactors
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
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JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
EP2251671B1 (de) 2009-05-13 2017-04-26 SiO2 Medical Products, Inc. Entgasungsverfahren zur Prüfung einer beschichteten Oberfläche
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
UA87745U (uk) * 2010-07-30 2014-02-25 Институт металлофизики им. Г.В. Курдюмова НАН Украины Плазмовий реактор з магнітною системою
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN102915902B (zh) * 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CN103930595A (zh) 2011-11-11 2014-07-16 Sio2医药产品公司 用于药物包装的钝化、pH保护性或润滑性涂层、涂布方法以及设备
CA2887352A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
CN104854257B (zh) 2012-11-01 2018-04-13 Sio2医药产品公司 涂层检查方法
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
EP2925903B1 (de) 2012-11-30 2022-04-13 Si02 Medical Products, Inc. Steuerung der gleichförmigkeit der pecvg-ablagerung auf medizinischen spritzen, kartuschen und dergleichen
EP2961858B1 (de) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Beschichtete spritze.
KR102167557B1 (ko) 2013-03-11 2020-10-20 에스아이오2 메디컬 프로덕츠, 인크. 코팅된 패키징
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US20160017490A1 (en) 2013-03-15 2016-01-21 Sio2 Medical Products, Inc. Coating method
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
CA3204930A1 (en) 2015-08-18 2017-02-23 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
US20220102119A1 (en) * 2020-09-25 2022-03-31 Tokyo Electron Limited Plasma processing apparatus

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Also Published As

Publication number Publication date
KR100362596B1 (ko) 2003-02-19
US20010004920A1 (en) 2001-06-28
EP0786794B1 (de) 2003-07-02
TW303480B (en) 1997-04-21
US6402885B2 (en) 2002-06-11
US6030486A (en) 2000-02-29
EP0786794A2 (de) 1997-07-30
KR970060417A (ko) 1997-08-12
US6503367B1 (en) 2003-01-07
DE69628903T2 (de) 2004-06-03
EP1071113A2 (de) 2001-01-24
JPH09219397A (ja) 1997-08-19
EP0786794A3 (de) 1998-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee