DE69628964D1 - Harzvergossenes Halbleiterbauteil und Herstellungsverfahren - Google Patents

Harzvergossenes Halbleiterbauteil und Herstellungsverfahren

Info

Publication number
DE69628964D1
DE69628964D1 DE69628964T DE69628964T DE69628964D1 DE 69628964 D1 DE69628964 D1 DE 69628964D1 DE 69628964 T DE69628964 T DE 69628964T DE 69628964 T DE69628964 T DE 69628964T DE 69628964 D1 DE69628964 D1 DE 69628964D1
Authority
DE
Germany
Prior art keywords
semiconductor device
manufacturing process
resin molded
molded semiconductor
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69628964T
Other languages
English (en)
Other versions
DE69628964T2 (de
Inventor
Tetsuya Ootsuki
Tadami Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69628964D1 publication Critical patent/DE69628964D1/de
Application granted granted Critical
Publication of DE69628964T2 publication Critical patent/DE69628964T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
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    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48253Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a potential ring of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/181Encapsulation
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
DE69628964T 1995-03-17 1996-03-15 Harzvergossenes Halbleiterbauteil und Herstellungsverfahren Expired - Fee Related DE69628964T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8651695 1995-03-17
JP8651695 1995-03-17
JP34532895 1995-12-07
JP34532895A JP3309686B2 (ja) 1995-03-17 1995-12-07 樹脂封止型半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69628964D1 true DE69628964D1 (de) 2003-08-14
DE69628964T2 DE69628964T2 (de) 2004-05-27

Family

ID=26427621

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69628964T Expired - Fee Related DE69628964T2 (de) 1995-03-17 1996-03-15 Harzvergossenes Halbleiterbauteil und Herstellungsverfahren

Country Status (9)

Country Link
US (1) US5777380A (de)
EP (1) EP0732744B1 (de)
JP (1) JP3309686B2 (de)
KR (1) KR100359399B1 (de)
CN (2) CN1138303C (de)
DE (1) DE69628964T2 (de)
HK (1) HK1013734A1 (de)
SG (1) SG54260A1 (de)
TW (1) TW309649B (de)

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JP2006066008A (ja) * 2004-08-30 2006-03-09 Hitachi Global Storage Technologies Netherlands Bv 磁気ディスクおよび磁気ディスクの製造方法
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KR20100104590A (ko) * 2009-03-18 2010-09-29 삼성전자주식회사 리드 프레임 및 이를 갖는 반도체 패키지
CN104025292B (zh) 2011-12-22 2018-03-09 松下知识产权经营株式会社 半导体封装、其制造方法及模具、半导体封装的输入输出端子
WO2014020470A1 (en) * 2012-07-30 2014-02-06 Koninklijke Philips N.V. Strengthened led package and method therefor
CN104992934B (zh) * 2015-05-29 2018-01-09 株洲南车时代电气股份有限公司 功率半导体器件子模组
JP2017199803A (ja) 2016-04-27 2017-11-02 日立マクセル株式会社 三次元成形回路部品
JP6745442B2 (ja) * 2016-10-28 2020-08-26 パナソニックIpマネジメント株式会社 配線一体型樹脂パイプの製造方法
US10431526B2 (en) * 2017-10-09 2019-10-01 Cree, Inc. Rivetless lead fastening for a semiconductor package

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CN1574312A (zh) 2005-02-02
HK1013734A1 (en) 1999-09-03
SG54260A1 (en) 1998-11-16
JP3309686B2 (ja) 2002-07-29
EP0732744B1 (de) 2003-07-09
EP0732744A2 (de) 1996-09-18
JPH08321521A (ja) 1996-12-03
US5777380A (en) 1998-07-07
CN1288748C (zh) 2006-12-06
EP0732744A3 (de) 1997-08-27
CN1138303C (zh) 2004-02-11
KR960036007A (ko) 1996-10-28
DE69628964T2 (de) 2004-05-27
TW309649B (de) 1997-07-01
CN1140901A (zh) 1997-01-22
KR100359399B1 (ko) 2003-01-10

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