DE69631664D1 - SiC-HALBLEITERANORDNUNG MIT EINEM PN-ÜBERGANG, DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHÄLT - Google Patents
SiC-HALBLEITERANORDNUNG MIT EINEM PN-ÜBERGANG, DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHÄLTInfo
- Publication number
- DE69631664D1 DE69631664D1 DE69631664T DE69631664T DE69631664D1 DE 69631664 D1 DE69631664 D1 DE 69631664D1 DE 69631664 T DE69631664 T DE 69631664T DE 69631664 T DE69631664 T DE 69631664T DE 69631664 D1 DE69631664 D1 DE 69631664D1
- Authority
- DE
- Germany
- Prior art keywords
- absorption
- transition
- voltage
- edge
- sic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010521 absorption reaction Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US520689 | 1995-08-30 | ||
US08/520,689 US5967795A (en) | 1995-08-30 | 1995-08-30 | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
PCT/SE1996/001073 WO1997008754A2 (en) | 1995-08-30 | 1996-08-30 | SiC SEMICONDUCTOR DEVICE COMPRISING A PN JUNCTION WITH A VOLTAGE ABSORBING EDGE |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69631664D1 true DE69631664D1 (de) | 2004-04-01 |
DE69631664T2 DE69631664T2 (de) | 2004-12-23 |
Family
ID=24073679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69631664T Expired - Lifetime DE69631664T2 (de) | 1995-08-30 | 1996-08-30 | SiC-HALBLEITERANORDNUNG MIT EINEM PN-ÜBERGANG, DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHÄLT |
Country Status (5)
Country | Link |
---|---|
US (2) | US5967795A (de) |
EP (1) | EP0847598B1 (de) |
JP (1) | JP4350798B2 (de) |
DE (1) | DE69631664T2 (de) |
WO (1) | WO1997008754A2 (de) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002159A (en) * | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
SE512259C2 (sv) * | 1998-03-23 | 2000-02-21 | Abb Research Ltd | Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning |
WO1999053553A2 (en) | 1998-04-09 | 1999-10-21 | Koninklijke Philips Electronics N.V. | Semiconductor device having a rectifying junction and method of manufacturing same |
US6329675B2 (en) | 1999-08-06 | 2001-12-11 | Cree, Inc. | Self-aligned bipolar junction silicon carbide transistors |
US6218254B1 (en) | 1999-09-22 | 2001-04-17 | Cree Research, Inc. | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
FR2803103B1 (fr) * | 1999-12-24 | 2003-08-29 | St Microelectronics Sa | Diode schottky sur substrat de carbure de silicium |
US6642558B1 (en) * | 2000-03-20 | 2003-11-04 | Koninklijke Philips Electronics N.V. | Method and apparatus of terminating a high voltage solid state device |
US6429041B1 (en) | 2000-07-13 | 2002-08-06 | Cree, Inc. | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
US6573128B1 (en) | 2000-11-28 | 2003-06-03 | Cree, Inc. | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
JP4011848B2 (ja) * | 2000-12-12 | 2007-11-21 | 関西電力株式会社 | 高耐電圧半導体装置 |
US6844251B2 (en) * | 2001-03-23 | 2005-01-18 | Krishna Shenai | Method of forming a semiconductor device with a junction termination layer |
US6693308B2 (en) | 2002-02-22 | 2004-02-17 | Semisouth Laboratories, Llc | Power SiC devices having raised guard rings |
US9515135B2 (en) | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
US7026650B2 (en) | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
JP4338701B2 (ja) * | 2003-04-09 | 2009-10-07 | 関西電力株式会社 | ゲートターンオフサイリスタ |
US20050259368A1 (en) * | 2003-11-12 | 2005-11-24 | Ted Letavic | Method and apparatus of terminating a high voltage solid state device |
US20060006394A1 (en) * | 2004-05-28 | 2006-01-12 | Caracal, Inc. | Silicon carbide Schottky diodes and fabrication method |
US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
US9419092B2 (en) * | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
US8901699B2 (en) * | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
US7528040B2 (en) | 2005-05-24 | 2009-05-05 | Cree, Inc. | Methods of fabricating silicon carbide devices having smooth channels |
DE112006002377B4 (de) * | 2005-09-08 | 2014-04-24 | Mitsubishi Denki K.K. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
US8368165B2 (en) * | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
US7372087B2 (en) * | 2006-06-01 | 2008-05-13 | Northrop Grumman Corporation | Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage |
KR101193453B1 (ko) * | 2006-07-31 | 2012-10-24 | 비쉐이-실리코닉스 | 실리콘 카바이드 쇼트키 다이오드를 위한 몰리브덴 장벽 금속 및 제조방법 |
US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
EP2631951B1 (de) | 2006-08-17 | 2017-10-11 | Cree, Inc. | Bipolare Hochleistungstransistoren mit isoliertem Gatter |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
JP2007258742A (ja) * | 2007-05-23 | 2007-10-04 | Kansai Electric Power Co Inc:The | 高耐電圧半導体装置 |
KR101494935B1 (ko) | 2007-11-09 | 2015-02-23 | 크리,인코포레이티드 | 메사 스텝들을 포함하는 버퍼층들 및 메사 구조들을 가지는 전력 반도체 장치들 |
US9640609B2 (en) * | 2008-02-26 | 2017-05-02 | Cree, Inc. | Double guard ring edge termination for silicon carbide devices |
JP3141688U (ja) * | 2008-02-29 | 2008-05-22 | サンケン電気株式会社 | 半導体装置 |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US8097919B2 (en) * | 2008-08-11 | 2012-01-17 | Cree, Inc. | Mesa termination structures for power semiconductor devices including mesa step buffers |
EP2175497B1 (de) * | 2008-08-12 | 2019-11-20 | Ascatron AB | Lawinen-fotodiode zur detektion von photonen im ultravioletten bereich |
US8497552B2 (en) | 2008-12-01 | 2013-07-30 | Cree, Inc. | Semiconductor devices with current shifting regions and related methods |
US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
US8288220B2 (en) | 2009-03-27 | 2012-10-16 | Cree, Inc. | Methods of forming semiconductor devices including epitaxial layers and related structures |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8637386B2 (en) | 2009-05-12 | 2014-01-28 | Cree, Inc. | Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
AU2010262784A1 (en) * | 2009-06-19 | 2012-02-02 | Power Integrations, Inc. | Vertical junction field effect transistors and diodes having graded doped regions and methods of making |
US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US20110084332A1 (en) * | 2009-10-08 | 2011-04-14 | Vishay General Semiconductor, Llc. | Trench termination structure |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
SE537101C2 (sv) * | 2010-03-30 | 2015-01-07 | Fairchild Semiconductor | Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
USRE46464E1 (en) * | 2010-12-14 | 2017-07-04 | Lam Research Corporation | Method for forming stair-step structures |
US8535549B2 (en) * | 2010-12-14 | 2013-09-17 | Lam Research Corporation | Method for forming stair-step structures |
US8803277B2 (en) | 2011-02-10 | 2014-08-12 | Cree, Inc. | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
US9318623B2 (en) | 2011-04-05 | 2016-04-19 | Cree, Inc. | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9349797B2 (en) | 2011-05-16 | 2016-05-24 | Cree, Inc. | SiC devices with high blocking voltage terminated by a negative bevel |
US9337268B2 (en) * | 2011-05-16 | 2016-05-10 | Cree, Inc. | SiC devices with high blocking voltage terminated by a negative bevel |
JP5745954B2 (ja) * | 2011-06-29 | 2015-07-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
JP2014531752A (ja) | 2011-09-11 | 2014-11-27 | クリー インコーポレイテッドCree Inc. | 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US8749015B2 (en) * | 2011-11-17 | 2014-06-10 | Avogy, Inc. | Method and system for fabricating floating guard rings in GaN materials |
US9224828B2 (en) | 2011-10-11 | 2015-12-29 | Avogy, Inc. | Method and system for floating guard rings in gallium nitride materials |
JP6335795B2 (ja) * | 2012-02-06 | 2018-05-30 | クリー インコーポレイテッドCree Inc. | 負ベベルにより終端した、高い阻止電圧を有するSiC素子 |
US9064738B2 (en) * | 2013-07-19 | 2015-06-23 | Cree, Inc. | Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devices |
US9425265B2 (en) * | 2013-08-16 | 2016-08-23 | Cree, Inc. | Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
CN104616978A (zh) * | 2014-12-31 | 2015-05-13 | 国家电网公司 | 一种碳化硅功率器件终端结构的制作方法 |
CN104637793A (zh) * | 2014-12-31 | 2015-05-20 | 国家电网公司 | 一种碳化硅器件终端结构的制作方法 |
DE102015117286B4 (de) | 2015-10-09 | 2018-04-05 | Infineon Technologies Ag | Verfahren zum herstellen einer siliziumcarbidhalbleitervorrichtung durch entfernen amorphisierter abschnitte |
CN105428214B (zh) * | 2015-11-17 | 2018-07-13 | 中国工程物理研究院电子工程研究所 | 一种碳化硅斜角台面刻蚀方法 |
JP6524950B2 (ja) * | 2016-03-29 | 2019-06-05 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
CN109196415B (zh) | 2016-04-12 | 2022-04-01 | E-视觉智能光学公司 | 具有凸起电阻性桥的电活性透镜 |
US10599006B2 (en) | 2016-04-12 | 2020-03-24 | E-Vision Smart Optics, Inc. | Electro-active lenses with raised resistive bridges |
JP6857488B2 (ja) * | 2016-11-29 | 2021-04-14 | 株式会社日立製作所 | 半導体装置の製造方法 |
CN106783957A (zh) * | 2016-12-27 | 2017-05-31 | 西安电子科技大学 | 碳化硅多台阶沟槽结终端扩展终端结构及其制备方法 |
CN108962747A (zh) * | 2017-05-24 | 2018-12-07 | 亚昕科技股份有限公司 | 具有阶梯形结构的二极管制作方法 |
DE102017125244B3 (de) | 2017-10-27 | 2019-02-28 | Infineon Technologies Ag | HALBLEITERVORRICHTUNG MIT JUNCTION-ABSCHLUSSZONE und Verfahren zu deren Herstellung |
CN113053999B (zh) * | 2021-03-12 | 2023-02-21 | 深圳方正微电子有限公司 | 金属氧化物半导体晶体管及其制备方法 |
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DE221598C (de) * | 1909-03-17 | |||
US3697829A (en) * | 1968-12-30 | 1972-10-10 | Gen Electric | Semiconductor devices with improved voltage breakdown characteristics |
US4211586A (en) * | 1977-09-21 | 1980-07-08 | International Business Machines Corporation | Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers |
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GB2071411B (en) * | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
EP0144876B1 (de) * | 1983-12-07 | 1988-03-09 | BBC Brown Boveri AG | Halbleiterbauelement |
DD221598A1 (de) * | 1983-12-30 | 1985-04-24 | Adw Ddr Inst Optik | Passivierungsschicht fuer halbleiterbauelemente auf gaas-basis |
IT1214805B (it) * | 1984-08-21 | 1990-01-18 | Ates Componenti Elettron | Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown |
US4947218A (en) * | 1987-11-03 | 1990-08-07 | North Carolina State University | P-N junction diodes in silicon carbide |
US4927772A (en) * | 1989-05-30 | 1990-05-22 | General Electric Company | Method of making high breakdown voltage semiconductor device |
US5119148A (en) * | 1989-11-29 | 1992-06-02 | Motorola, Inc. | Fast damper diode and method |
US5973114A (en) * | 1992-06-23 | 1999-10-26 | The University Of Virginia Patent Foundation | Isolation and characterization of the growth hormone releasing hormone receptor |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
WO1995032524A1 (en) * | 1994-05-24 | 1995-11-30 | Abb Research Ltd. | Semiconductor device in silicon carbide with passivated surface |
SE9500013D0 (sv) * | 1995-01-03 | 1995-01-03 | Abb Research Ltd | Semiconductor device having a passivation layer |
US5814840A (en) * | 1995-06-06 | 1998-09-29 | Purdue Research Foundation | Incandescent light energy conversion with reduced infrared emission |
-
1995
- 1995-08-30 US US08/520,689 patent/US5967795A/en not_active Expired - Lifetime
-
1996
- 1996-08-30 WO PCT/SE1996/001073 patent/WO1997008754A2/en active IP Right Grant
- 1996-08-30 DE DE69631664T patent/DE69631664T2/de not_active Expired - Lifetime
- 1996-08-30 JP JP51019497A patent/JP4350798B2/ja not_active Expired - Lifetime
- 1996-08-30 EP EP96929634A patent/EP0847598B1/de not_active Expired - Lifetime
-
1997
- 1997-10-20 US US08/954,165 patent/US5977605A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1997008754A3 (en) | 1997-10-30 |
EP0847598B1 (de) | 2004-02-25 |
US5967795A (en) | 1999-10-19 |
JP2002516027A (ja) | 2002-05-28 |
WO1997008754A2 (en) | 1997-03-06 |
US5977605A (en) | 1999-11-02 |
JP4350798B2 (ja) | 2009-10-21 |
DE69631664T2 (de) | 2004-12-23 |
EP0847598A2 (de) | 1998-06-17 |
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