DE69633150D1 - Siliziumcarbid-Metall-Diffusionsbarriere-Schicht - Google Patents

Siliziumcarbid-Metall-Diffusionsbarriere-Schicht

Info

Publication number
DE69633150D1
DE69633150D1 DE69633150T DE69633150T DE69633150D1 DE 69633150 D1 DE69633150 D1 DE 69633150D1 DE 69633150 T DE69633150 T DE 69633150T DE 69633150 T DE69633150 T DE 69633150T DE 69633150 D1 DE69633150 D1 DE 69633150D1
Authority
DE
Germany
Prior art keywords
barrier layer
silicon carbide
diffusion barrier
carbide metal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633150T
Other languages
English (en)
Other versions
DE69633150T2 (de
Inventor
Mark Jon Loboda
Keith Winton Michael
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE69633150D1 publication Critical patent/DE69633150D1/de
Application granted granted Critical
Publication of DE69633150T2 publication Critical patent/DE69633150T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
DE69633150T 1995-02-02 1996-01-25 Siliziumcarbid-Metall-Diffusionsbarriere-Schicht Expired - Lifetime DE69633150T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US382701 1995-02-02
US08/382,701 US5818071A (en) 1995-02-02 1995-02-02 Silicon carbide metal diffusion barrier layer

Publications (2)

Publication Number Publication Date
DE69633150D1 true DE69633150D1 (de) 2004-09-23
DE69633150T2 DE69633150T2 (de) 2005-08-18

Family

ID=23510038

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633150T Expired - Lifetime DE69633150T2 (de) 1995-02-02 1996-01-25 Siliziumcarbid-Metall-Diffusionsbarriere-Schicht

Country Status (6)

Country Link
US (1) US5818071A (de)
EP (1) EP0725440B1 (de)
JP (1) JP3731932B2 (de)
KR (1) KR100402187B1 (de)
DE (1) DE69633150T2 (de)
TW (1) TW284920B (de)

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Also Published As

Publication number Publication date
KR100402187B1 (ko) 2004-02-11
KR960032640A (ko) 1996-09-17
DE69633150T2 (de) 2005-08-18
EP0725440A3 (de) 1997-01-29
US5818071A (en) 1998-10-06
TW284920B (de) 1996-09-01
JP3731932B2 (ja) 2006-01-05
EP0725440B1 (de) 2004-08-18
JPH08250594A (ja) 1996-09-27
EP0725440A2 (de) 1996-08-07

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