DE69633726D1 - Verfahren und vorrichtung zum steuern der temperatur eines wafers - Google Patents

Verfahren und vorrichtung zum steuern der temperatur eines wafers

Info

Publication number
DE69633726D1
DE69633726D1 DE69633726T DE69633726T DE69633726D1 DE 69633726 D1 DE69633726 D1 DE 69633726D1 DE 69633726 T DE69633726 T DE 69633726T DE 69633726 T DE69633726 T DE 69633726T DE 69633726 D1 DE69633726 D1 DE 69633726D1
Authority
DE
Germany
Prior art keywords
wafer
temperature
chuck
controlling
pressurized gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633726T
Other languages
English (en)
Other versions
DE69633726T2 (de
Inventor
Anwar Husain
Hamid Noorbakhsh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69633726D1 publication Critical patent/DE69633726D1/de
Application granted granted Critical
Publication of DE69633726T2 publication Critical patent/DE69633726T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Physical Vapour Deposition (AREA)
DE69633726T 1995-06-07 1996-06-07 Verfahren und vorrichtung zum steuern der temperatur eines wafers Expired - Lifetime DE69633726T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US474009 1995-06-07
US08/474,009 US6140612A (en) 1995-06-07 1995-06-07 Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
PCT/US1996/009978 WO1996041369A1 (en) 1995-06-07 1996-06-07 Method and apparatus for controlling a temperature of a wafer

Publications (2)

Publication Number Publication Date
DE69633726D1 true DE69633726D1 (de) 2004-12-02
DE69633726T2 DE69633726T2 (de) 2005-10-27

Family

ID=23881851

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633726T Expired - Lifetime DE69633726T2 (de) 1995-06-07 1996-06-07 Verfahren und vorrichtung zum steuern der temperatur eines wafers

Country Status (7)

Country Link
US (2) US6140612A (de)
EP (1) EP0834188B1 (de)
JP (1) JP4034344B2 (de)
KR (1) KR19990022554A (de)
AT (1) ATE281001T1 (de)
DE (1) DE69633726T2 (de)
WO (1) WO1996041369A1 (de)

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US6231776B1 (en) 1995-12-04 2001-05-15 Daniel L. Flamm Multi-temperature processing
US5920797A (en) * 1996-12-03 1999-07-06 Applied Materials, Inc. Method for gaseous substrate support
JP2003526191A (ja) 1997-08-13 2003-09-02 アプライド マテリアルズ インコーポレイテッド 半導体デバイス用銅エッチング方法
JP2000021964A (ja) * 1998-07-06 2000-01-21 Ngk Insulators Ltd 静電チャックのパーティクル発生低減方法および半導体製造装置
US6449428B2 (en) * 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
US6110288A (en) * 1998-12-17 2000-08-29 Eaton Corporation Temperature probe and measurement method for low pressure process
US6635580B1 (en) * 1999-04-01 2003-10-21 Taiwan Semiconductor Manufacturing Co. Ltd. Apparatus and method for controlling wafer temperature in a plasma etcher
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
US6481886B1 (en) * 2000-02-24 2002-11-19 Applied Materials Inc. Apparatus for measuring pedestal and substrate temperature in a semiconductor wafer processing system
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
KR100679254B1 (ko) * 2000-11-20 2007-02-05 삼성전자주식회사 반도체장치 세정설비 및 그 운영방법
US6572265B1 (en) * 2001-04-20 2003-06-03 Luxtron Corporation In situ optical surface temperature measuring techniques and devices
US7080940B2 (en) * 2001-04-20 2006-07-25 Luxtron Corporation In situ optical surface temperature measuring techniques and devices
CA2349033A1 (en) * 2001-05-28 2002-11-28 Optenia, Inc. Initial plasma treatment for vertical dry etching of sio2
EP1573784A2 (de) * 2002-12-09 2005-09-14 Koninklijke Philips Electronics N.V. System und verfahren zur unterdrückung der wafertemperaturdrift in kaltwand-cvd-einrichtungen
DE102004047767B3 (de) * 2004-09-30 2006-08-10 Infineon Technologies Ag Verfahren zur Silizierung von Siliziumgrenzflächen mit PVD-Anlagen
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US8038796B2 (en) 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
GB0509499D0 (en) * 2005-05-11 2005-06-15 Univ Surrey Use of thermal barrier for low temperature growth of nanostructures using top-down heating approach
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US20070091540A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
JP5003102B2 (ja) * 2006-10-27 2012-08-15 東京エレクトロン株式会社 静電チャックの診断方法、真空処理装置及び記憶媒体
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
US8002463B2 (en) * 2008-06-13 2011-08-23 Asm International N.V. Method and device for determining the temperature of a substrate
KR101182502B1 (ko) * 2008-09-30 2012-09-12 도쿄엘렉트론가부시키가이샤 기판의 이상 배치 상태의 검지 방법, 기판 처리 방법, 컴퓨터 판독 가능한 기억 매체 및 기판 처리 장치
US8313612B2 (en) * 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
US8481433B2 (en) * 2009-03-31 2013-07-09 Applied Materials, Inc. Methods and apparatus for forming nitrogen-containing layers
WO2011065965A2 (en) * 2009-11-30 2011-06-03 Lam Research Corporation An electrostatic chuck with an angled sidewall
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
JP5478280B2 (ja) * 2010-01-27 2014-04-23 東京エレクトロン株式会社 基板加熱装置および基板加熱方法、ならびに基板処理システム
US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US9171702B2 (en) 2010-06-30 2015-10-27 Lam Research Corporation Consumable isolation ring for movable substrate support assembly of a plasma processing chamber
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
US9613839B2 (en) 2014-11-19 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Control of workpiece temperature via backside gas flow
JP2016136554A (ja) 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2019199641A1 (en) * 2018-04-12 2019-10-17 Lam Research Corporation Determining and controlling substrate temperature during substrate processing
US11630001B2 (en) * 2019-12-10 2023-04-18 Applied Materials, Inc. Apparatus for measuring temperature in a vacuum and microwave environment
US11204206B2 (en) 2020-05-18 2021-12-21 Envertic Thermal Systems, Llc Thermal switch
US11749542B2 (en) * 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US20220270865A1 (en) * 2021-02-25 2022-08-25 Kurt J. Lesker Company Pressure-Induced Temperature Modification During Atomic Scale Processing

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US4680061A (en) * 1979-12-21 1987-07-14 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4542298A (en) * 1983-06-09 1985-09-17 Varian Associates, Inc. Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer
US4527620A (en) * 1984-05-02 1985-07-09 Varian Associates, Inc. Apparatus for controlling thermal transfer in a cyclic vacuum processing system
US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
WO1988009054A1 (en) * 1987-05-06 1988-11-17 Labtam Limited Electrostatic chuck using ac field excitation
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
JP2680338B2 (ja) * 1988-03-31 1997-11-19 株式会社東芝 静電チャック装置
US4999320A (en) * 1988-03-31 1991-03-12 Texas Instruments Incorporated Method for suppressing ionization avalanches in a helium wafer cooling assembly
US4949783A (en) * 1988-05-18 1990-08-21 Veeco Instruments, Inc. Substrate transport and cooling apparatus and method for same
JP3129452B2 (ja) * 1990-03-13 2001-01-29 富士電機株式会社 静電チャック
US5556204A (en) * 1990-07-02 1996-09-17 Hitachi, Ltd. Method and apparatus for detecting the temperature of a sample
US5673750A (en) * 1990-05-19 1997-10-07 Hitachi, Ltd. Vacuum processing method and apparatus
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
KR0165898B1 (ko) * 1990-07-02 1999-02-01 미다 가쓰시게 진공처리방법 및 장치
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
JPH05166757A (ja) * 1991-12-13 1993-07-02 Tokyo Electron Ltd 被処理体の温調装置
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
US5676205A (en) * 1993-10-29 1997-10-14 Applied Materials, Inc. Quasi-infinite heat source/sink
US5738751A (en) * 1994-09-01 1998-04-14 Applied Materials, Inc. Substrate support having improved heat transfer

Also Published As

Publication number Publication date
EP0834188B1 (de) 2004-10-27
EP0834188A1 (de) 1998-04-08
JPH11507473A (ja) 1999-06-29
DE69633726T2 (de) 2005-10-27
US6303895B1 (en) 2001-10-16
ATE281001T1 (de) 2004-11-15
WO1996041369A1 (en) 1996-12-19
JP4034344B2 (ja) 2008-01-16
US6140612A (en) 2000-10-31
KR19990022554A (ko) 1999-03-25

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