DE69634641D1 - Dünnschichtkondensator mit diamantähnlichen nanoverbundstoffmaterialen - Google Patents
Dünnschichtkondensator mit diamantähnlichen nanoverbundstoffmaterialenInfo
- Publication number
- DE69634641D1 DE69634641D1 DE69634641T DE69634641T DE69634641D1 DE 69634641 D1 DE69634641 D1 DE 69634641D1 DE 69634641 T DE69634641 T DE 69634641T DE 69634641 T DE69634641 T DE 69634641T DE 69634641 D1 DE69634641 D1 DE 69634641D1
- Authority
- DE
- Germany
- Prior art keywords
- diamond
- nano
- condenser
- filed
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US538475 | 1995-10-03 | ||
US08/538,475 US5638251A (en) | 1995-10-03 | 1995-10-03 | Capacitive thin films using diamond-like nanocomposite materials |
PCT/US1996/015368 WO1997013263A1 (en) | 1995-10-03 | 1996-09-25 | Capacitive thin films using diamond-like nanocomposite materials |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69634641D1 true DE69634641D1 (de) | 2005-05-25 |
DE69634641T2 DE69634641T2 (de) | 2006-03-02 |
Family
ID=24147084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69634641T Expired - Lifetime DE69634641T2 (de) | 1995-10-03 | 1996-09-25 | Dünnschichtkondensator mit diamantähnlichen nanoverbundstoffmaterialen |
Country Status (12)
Country | Link |
---|---|
US (1) | US5638251A (de) |
EP (1) | EP1008157B1 (de) |
JP (1) | JP3961025B2 (de) |
KR (1) | KR100449603B1 (de) |
CN (1) | CN1111882C (de) |
AT (1) | ATE293835T1 (de) |
AU (1) | AU700713B2 (de) |
CA (1) | CA2233631A1 (de) |
DE (1) | DE69634641T2 (de) |
MX (1) | MX9802581A (de) |
TW (1) | TW355803B (de) |
WO (1) | WO1997013263A1 (de) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6468642B1 (en) | 1995-10-03 | 2002-10-22 | N.V. Bekaert S.A. | Fluorine-doped diamond-like coatings |
US5736448A (en) * | 1995-12-04 | 1998-04-07 | General Electric Company | Fabrication method for thin film capacitors |
US6080470A (en) * | 1996-06-17 | 2000-06-27 | Dorfman; Benjamin F. | Hard graphite-like material bonded by diamond-like framework |
US5804259A (en) * | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
US6146541A (en) * | 1997-05-02 | 2000-11-14 | Motorola, Inc. | Method of manufacturing a semiconductor device that uses a calibration standard |
EP0885983A1 (de) * | 1997-06-19 | 1998-12-23 | N.V. Bekaert S.A. | Verfahren zur Beschichtung eines Substrates mit einer diamantartigen Nanocomposit-Zusammensetzung |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6627532B1 (en) * | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
US6593247B1 (en) * | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
US6147009A (en) * | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
US6114015A (en) * | 1998-10-13 | 2000-09-05 | Matsushita Electronic Materials, Inc. | Thin-laminate panels for capacitive printed-circuit boards and methods for making the same |
US6783620B1 (en) | 1998-10-13 | 2004-08-31 | Matsushita Electronic Materials, Inc. | Thin-laminate panels for capacitive printed-circuit boards and methods for making the same |
US6171945B1 (en) | 1998-10-22 | 2001-01-09 | Applied Materials, Inc. | CVD nanoporous silica low dielectric constant films |
US6268261B1 (en) | 1998-11-03 | 2001-07-31 | International Business Machines Corporation | Microprocessor having air as a dielectric and encapsulated lines and process for manufacture |
US6245690B1 (en) | 1998-11-04 | 2001-06-12 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
CN1075762C (zh) * | 1998-12-30 | 2001-12-05 | 中国科学院感光化学研究所 | 一种变色薄膜的制备方法 |
US6399489B1 (en) | 1999-11-01 | 2002-06-04 | Applied Materials, Inc. | Barrier layer deposition using HDP-CVD |
US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
US6749813B1 (en) | 2000-03-05 | 2004-06-15 | 3M Innovative Properties Company | Fluid handling devices with diamond-like films |
US6696157B1 (en) * | 2000-03-05 | 2004-02-24 | 3M Innovative Properties Company | Diamond-like glass thin films |
US6795636B1 (en) | 2000-03-05 | 2004-09-21 | 3M Innovative Properties Company | Radiation-transmissive films on glass articles |
EP1317775A4 (de) * | 2000-03-20 | 2009-01-28 | Bekaert Sa Nv | Materialien mit niedrigen dielektrizitätskonstanten und herstellungsverfahren |
US6531398B1 (en) | 2000-10-30 | 2003-03-11 | Applied Materials, Inc. | Method of depositing organosillicate layers |
US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
US6486082B1 (en) * | 2001-06-18 | 2002-11-26 | Applied Materials, Inc. | CVD plasma assisted lower dielectric constant sicoh film |
US6926926B2 (en) * | 2001-09-10 | 2005-08-09 | Applied Materials, Inc. | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias |
US6759327B2 (en) * | 2001-10-09 | 2004-07-06 | Applied Materials Inc. | Method of depositing low k barrier layers |
US7588699B2 (en) * | 2001-11-02 | 2009-09-15 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Electrically conductive, optically transparent polymer/carbon nanotube composites and process for preparation thereof |
US6890850B2 (en) | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
US7091137B2 (en) * | 2001-12-14 | 2006-08-15 | Applied Materials | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications |
US6838393B2 (en) | 2001-12-14 | 2005-01-04 | Applied Materials, Inc. | Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide |
US6936309B2 (en) * | 2002-04-02 | 2005-08-30 | Applied Materials, Inc. | Hardness improvement of silicon carboxy films |
US20030194496A1 (en) * | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Methods for depositing dielectric material |
US20030211244A1 (en) * | 2002-04-11 | 2003-11-13 | Applied Materials, Inc. | Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric |
US6815373B2 (en) * | 2002-04-16 | 2004-11-09 | Applied Materials Inc. | Use of cyclic siloxanes for hardness improvement of low k dielectric films |
US6858548B2 (en) * | 2002-04-18 | 2005-02-22 | Applied Materials, Inc. | Application of carbon doped silicon oxide film to flat panel industry |
US20030206337A1 (en) * | 2002-05-06 | 2003-11-06 | Eastman Kodak Company | Exposure apparatus for irradiating a sensitized substrate |
US7105460B2 (en) * | 2002-07-11 | 2006-09-12 | Applied Materials | Nitrogen-free dielectric anti-reflective coating and hardmask |
US6927178B2 (en) * | 2002-07-11 | 2005-08-09 | Applied Materials, Inc. | Nitrogen-free dielectric anti-reflective coating and hardmask |
US7749563B2 (en) * | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
CH696441A5 (fr) * | 2002-10-12 | 2007-06-15 | Surcotec S A | Procédé d'obtention d'une couche composite de couleur noire. |
US6790788B2 (en) * | 2003-01-13 | 2004-09-14 | Applied Materials Inc. | Method of improving stability in low k barrier layers |
US6897163B2 (en) | 2003-01-31 | 2005-05-24 | Applied Materials, Inc. | Method for depositing a low dielectric constant film |
US7011890B2 (en) * | 2003-03-03 | 2006-03-14 | Applied Materials Inc. | Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices |
US7355838B2 (en) * | 2003-03-31 | 2008-04-08 | Tdk Corporation | Green sheet coating material, green sheet, production method of green sheet and production method of electronic device |
US8070988B2 (en) * | 2003-09-09 | 2011-12-06 | International Technology Center | Nano-carbon hybrid structures |
US7224039B1 (en) * | 2003-09-09 | 2007-05-29 | International Technology Center | Polymer nanocomposite structures for integrated circuits |
US7824498B2 (en) * | 2004-02-24 | 2010-11-02 | Applied Materials, Inc. | Coating for reducing contamination of substrates during processing |
US7030041B2 (en) * | 2004-03-15 | 2006-04-18 | Applied Materials Inc. | Adhesion improvement for low k dielectrics |
US7229911B2 (en) * | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
US20050233555A1 (en) * | 2004-04-19 | 2005-10-20 | Nagarajan Rajagopalan | Adhesion improvement for low k dielectrics to conductive materials |
US20050277302A1 (en) * | 2004-05-28 | 2005-12-15 | Nguyen Son V | Advanced low dielectric constant barrier layers |
US7229041B2 (en) * | 2004-06-30 | 2007-06-12 | Ohio Central Steel Company | Lifting lid crusher |
US7288205B2 (en) * | 2004-07-09 | 2007-10-30 | Applied Materials, Inc. | Hermetic low dielectric constant layer for barrier applications |
US7352065B2 (en) * | 2004-09-09 | 2008-04-01 | Nanodynamics, Inc. | Semiconductor devices having amorphous silicon-carbon dielectric and conducting layers |
US20070020451A1 (en) * | 2005-07-20 | 2007-01-25 | 3M Innovative Properties Company | Moisture barrier coatings |
US7989530B2 (en) * | 2005-11-23 | 2011-08-02 | General Electric Company | Nonlinear polymer composites and methods of making the same |
TWI321970B (en) * | 2007-01-31 | 2010-03-11 | Advanced Semiconductor Eng | Package stucture with embedded capacitor and applications thereof |
US8247484B2 (en) * | 2008-06-12 | 2012-08-21 | General Electric Company | High temperature polymer composites and methods of making the same |
US20090309259A1 (en) * | 2008-06-12 | 2009-12-17 | General Electric Company | High temperature polymer composites comprising antiferroelectric particles and methods of making the same |
US8120890B2 (en) * | 2008-07-25 | 2012-02-21 | General Electric Company | High temperature film capacitor |
US9390857B2 (en) * | 2008-09-30 | 2016-07-12 | General Electric Company | Film capacitor |
CN103946937B (zh) | 2011-11-16 | 2017-03-15 | M·A·斯图尔特 | 高能量密度存储装置 |
US9396880B2 (en) | 2011-11-16 | 2016-07-19 | Martin A. Stuart | High energy density storage device |
JP2017128491A (ja) * | 2016-01-18 | 2017-07-27 | 住友電気工業株式会社 | 光学部品 |
CN110407299A (zh) * | 2018-04-28 | 2019-11-05 | 深圳先进技术研究院 | 一种多孔硼氮镍共掺杂金刚石电极及其制备方法和应用 |
US11639543B2 (en) | 2019-05-22 | 2023-05-02 | Thin Film Service, Inc. | Tetrahedral amorphous hydrogenated carbon and amorphous siloxane diamond-like nanocomposite |
KR20220107849A (ko) * | 2021-01-26 | 2022-08-02 | 삼성전자주식회사 | 박막 적층 구조체, 이를 포함하는 집적 소자, 및 상기 박막 적층체의 제조방법 |
US11961896B2 (en) * | 2021-09-14 | 2024-04-16 | Honeywell Federal Manufacturing & Technologies, Llc | Diamond-like carbon coating for passive and active electronics |
CN115612989A (zh) * | 2022-09-27 | 2023-01-17 | 苏州辉钻纳米新材料有限公司 | 含硅含氧的高阶静电消散薄膜复合新材料及其制备方法 |
Family Cites Families (50)
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US4191735A (en) * | 1973-06-07 | 1980-03-04 | National Research Development Corporation | Growth of synthetic diamonds |
AT386558B (de) * | 1984-03-30 | 1988-09-12 | De Beers Ind Diamond | Verwendung eines schleifwerkzeuges |
US4985051A (en) * | 1984-08-24 | 1991-01-15 | The Australian National University | Diamond compacts |
DE3585226D1 (de) * | 1984-08-24 | 1992-02-27 | Univ Australian | Diamantaggregate und deren herstellung. |
US4877677A (en) * | 1985-02-19 | 1989-10-31 | Matsushita Electric Industrial Co., Ltd. | Wear-protected device |
EP0221531A3 (de) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren |
US4933058A (en) * | 1986-01-23 | 1990-06-12 | The Gillette Company | Formation of hard coatings on cutting edges |
US4897829A (en) * | 1986-11-20 | 1990-01-30 | Canon Kabushiki Kaisha | Cardlike optical recording medium |
JPS63210099A (ja) * | 1987-02-26 | 1988-08-31 | Nissin Electric Co Ltd | ダイヤモンド膜の作製方法 |
DE3706340A1 (de) * | 1987-02-27 | 1988-09-08 | Winter & Sohn Ernst | Verfahren zum auftragen einer verschleissschutzschicht und danach hergestelltes erzeugnis |
DE3710272C1 (de) * | 1987-03-28 | 1988-07-28 | Bergwerksverband Gmbh | Verfahren zur Herstellung eines Kohlenstoff-Katalysators fuer die NOx-Reduktion mit Ammoniak und seine Verwendung |
US4960643A (en) * | 1987-03-31 | 1990-10-02 | Lemelson Jerome H | Composite synthetic materials |
US5040501A (en) * | 1987-03-31 | 1991-08-20 | Lemelson Jerome H | Valves and valve components |
US4822466A (en) * | 1987-06-25 | 1989-04-18 | University Of Houston - University Park | Chemically bonded diamond films and method for producing same |
US4816291A (en) * | 1987-08-19 | 1989-03-28 | The Regents Of The University Of California | Process for making diamond, doped diamond, diamond-cubic boron nitride composite films |
US5256483A (en) * | 1988-02-05 | 1993-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and apparatus |
GB8821944D0 (en) * | 1988-09-19 | 1988-10-19 | Gillette Co | Method & apparatus for forming surface of workpiece |
US5002899A (en) * | 1988-09-30 | 1991-03-26 | Massachusetts Institute Of Technology | Electrical contacts on diamond |
US5055318A (en) * | 1988-10-11 | 1991-10-08 | Beamalloy Corporation | Dual ion beam ballistic alloying process |
US4992298A (en) * | 1988-10-11 | 1991-02-12 | Beamalloy Corporation | Dual ion beam ballistic alloying process |
CA2000805C (en) * | 1988-10-17 | 1994-01-18 | Kiyoshi Sudani | Carbon/metal composite |
DE68916207T3 (de) * | 1988-12-21 | 1999-11-25 | Mitsubishi Materials Corp | Diamantbeschichtetes Werkzeug, Substrate dafür und Verfahren zu dessen Herstellung. |
US5171732A (en) * | 1988-12-23 | 1992-12-15 | Troy Investments, Inc. | Method of making a josephson junction |
EP0588449B1 (de) * | 1988-12-27 | 1997-08-06 | Canon Kabushiki Kaisha | Durch elektrisches Feld lichtemittierende Vorrichtung |
US5142390A (en) * | 1989-02-23 | 1992-08-25 | Ricoh Company, Ltd. | MIM element with a doped hard carbon film |
JPH0620464B2 (ja) * | 1989-04-03 | 1994-03-23 | 信越化学工業株式会社 | 医療用切開、圧入器具およびその製造方法 |
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US5101288A (en) * | 1989-04-06 | 1992-03-31 | Ricoh Company, Ltd. | LCD having obliquely split or interdigitated pixels connected to MIM elements having a diamond-like insulator |
US5087434A (en) * | 1989-04-21 | 1992-02-11 | The Pennsylvania Research Corporation | Synthesis of diamond powders in the gas phase |
US4961958A (en) * | 1989-06-30 | 1990-10-09 | The Regents Of The Univ. Of Calif. | Process for making diamond, and doped diamond films at low temperature |
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US5094915A (en) * | 1990-05-16 | 1992-03-10 | The Ohio State University | Laser-excited synthesis of carbon films from carbon monoxide-containing gas mixtures |
US5100424A (en) * | 1990-05-21 | 1992-03-31 | Cardiovascular Imaging Systems, Inc. | Intravascular catheter having combined imaging abrasion head |
US5077103A (en) * | 1990-06-25 | 1991-12-31 | Rockwell International Corporation | Refractory solid-state heat pipes and heat shields |
US5202571A (en) * | 1990-07-06 | 1993-04-13 | Canon Kabushiki Kaisha | Electron emitting device with diamond |
US5174983A (en) * | 1990-09-24 | 1992-12-29 | The United States Of America, As Represented By The Secretary Of The Navy | Flame or plasma synthesis of diamond under turbulent and transition flow conditions |
US5135808A (en) * | 1990-09-27 | 1992-08-04 | Diamonex, Incorporated | Abrasion wear resistant coated substrate product |
US5190807A (en) * | 1990-10-18 | 1993-03-02 | Diamonex, Incorporated | Abrasion wear resistant polymeric substrate product |
US5142785A (en) * | 1991-04-26 | 1992-09-01 | The Gillette Company | Razor technology |
US5352493A (en) * | 1991-05-03 | 1994-10-04 | Veniamin Dorfman | Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films |
US5232568A (en) * | 1991-06-24 | 1993-08-03 | The Gillette Company | Razor technology |
US5177299A (en) * | 1991-12-30 | 1993-01-05 | Uop | Recovery of high octane components from isomerates |
US5295305B1 (en) * | 1992-02-13 | 1996-08-13 | Gillette Co | Razor blade technology |
US5249554A (en) * | 1993-01-08 | 1993-10-05 | Ford Motor Company | Powertrain component with adherent film having a graded composition |
-
1995
- 1995-10-03 US US08/538,475 patent/US5638251A/en not_active Expired - Lifetime
-
1996
- 1996-09-25 AU AU75132/96A patent/AU700713B2/en not_active Ceased
- 1996-09-25 DE DE69634641T patent/DE69634641T2/de not_active Expired - Lifetime
- 1996-09-25 AT AT96937640T patent/ATE293835T1/de not_active IP Right Cessation
- 1996-09-25 CA CA002233631A patent/CA2233631A1/en not_active Abandoned
- 1996-09-25 EP EP96937640A patent/EP1008157B1/de not_active Expired - Lifetime
- 1996-09-25 WO PCT/US1996/015368 patent/WO1997013263A1/en active IP Right Grant
- 1996-09-25 JP JP51431497A patent/JP3961025B2/ja not_active Expired - Fee Related
- 1996-09-25 KR KR10-1998-0702428A patent/KR100449603B1/ko not_active IP Right Cessation
- 1996-09-25 CN CN96198464A patent/CN1111882C/zh not_active Expired - Fee Related
-
1997
- 1997-04-01 TW TW086104157A patent/TW355803B/zh not_active IP Right Cessation
-
1998
- 1998-04-02 MX MX9802581A patent/MX9802581A/es unknown
Also Published As
Publication number | Publication date |
---|---|
DE69634641T2 (de) | 2006-03-02 |
KR19990063955A (ko) | 1999-07-26 |
AU700713B2 (en) | 1999-01-14 |
AU7513296A (en) | 1997-04-28 |
EP1008157B1 (de) | 2005-04-20 |
KR100449603B1 (ko) | 2004-11-16 |
TW355803B (en) | 1999-04-11 |
WO1997013263A1 (en) | 1997-04-10 |
MX9802581A (es) | 1998-11-30 |
EP1008157A1 (de) | 2000-06-14 |
CA2233631A1 (en) | 1997-04-10 |
JPH11512885A (ja) | 1999-11-02 |
ATE293835T1 (de) | 2005-05-15 |
US5638251A (en) | 1997-06-10 |
CN1111882C (zh) | 2003-06-18 |
JP3961025B2 (ja) | 2007-08-15 |
EP1008157A4 (de) | 2001-02-07 |
CN1202978A (zh) | 1998-12-23 |
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