DE69634711D1 - VBB-Referenz für spannungsgepümptes Substrat - Google Patents

VBB-Referenz für spannungsgepümptes Substrat

Info

Publication number
DE69634711D1
DE69634711D1 DE69634711T DE69634711T DE69634711D1 DE 69634711 D1 DE69634711 D1 DE 69634711D1 DE 69634711 T DE69634711 T DE 69634711T DE 69634711 T DE69634711 T DE 69634711T DE 69634711 D1 DE69634711 D1 DE 69634711D1
Authority
DE
Germany
Prior art keywords
tipped
stress
substrate
vbb
vbb reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69634711T
Other languages
English (en)
Other versions
DE69634711T2 (de
Inventor
James Gorecki
Ravindar Lall
Robert B Lefferts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Semiconductor Corp
Original Assignee
Lattice Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Semiconductor Corp filed Critical Lattice Semiconductor Corp
Publication of DE69634711D1 publication Critical patent/DE69634711D1/de
Application granted granted Critical
Publication of DE69634711T2 publication Critical patent/DE69634711T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
DE69634711T 1995-03-14 1996-03-08 VBB-Referenz für spannungsgepümptes Substrat Expired - Fee Related DE69634711T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US403595 1995-03-14
US08/403,595 US5670907A (en) 1995-03-14 1995-03-14 VBB reference for pumped substrates

Publications (2)

Publication Number Publication Date
DE69634711D1 true DE69634711D1 (de) 2005-06-16
DE69634711T2 DE69634711T2 (de) 2006-01-19

Family

ID=23596347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69634711T Expired - Fee Related DE69634711T2 (de) 1995-03-14 1996-03-08 VBB-Referenz für spannungsgepümptes Substrat

Country Status (4)

Country Link
US (1) US5670907A (de)
EP (1) EP0732796B1 (de)
JP (1) JP3765433B2 (de)
DE (1) DE69634711T2 (de)

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JP3718106B2 (ja) * 2000-05-22 2005-11-16 松下電器産業株式会社 半導体集積回路
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US6356062B1 (en) * 2000-09-27 2002-03-12 Intel Corporation Degenerative load temperature correction for charge pumps
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US6486727B1 (en) 2001-10-11 2002-11-26 Pericom Semiconductor Corp. Low-power substrate bias generator disabled by comparators for supply over-voltage protection and bias target voltage
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JP2004165649A (ja) * 2002-10-21 2004-06-10 Matsushita Electric Ind Co Ltd 半導体集積回路装置
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US7719343B2 (en) * 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
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US7348827B2 (en) 2004-05-19 2008-03-25 Altera Corporation Apparatus and methods for adjusting performance of programmable logic devices
EP1774620B1 (de) 2004-06-23 2014-10-01 Peregrine Semiconductor Corporation Integriertes hf-front-end
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US7355437B2 (en) 2006-03-06 2008-04-08 Altera Corporation Latch-up prevention circuitry for integrated circuits with transistor body biasing
US7495471B2 (en) 2006-03-06 2009-02-24 Altera Corporation Adjustable transistor body bias circuitry
US7330049B2 (en) 2006-03-06 2008-02-12 Altera Corporation Adjustable transistor body bias generation circuitry with latch-up prevention
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
EP2255443B1 (de) 2008-02-28 2012-11-28 Peregrine Semiconductor Corporation Verfahren und vorrichtung für digitale abstimmung eines kondensators bei einer integrierten schaltung
EP2346169A3 (de) 2008-07-18 2013-11-20 Peregrine Semiconductor Corporation Lärmarme, hocheffiziente Vorspannungserzeugungsschaltung und Verfahren
US9030248B2 (en) * 2008-07-18 2015-05-12 Peregrine Semiconductor Corporation Level shifter with output spike reduction
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
CN101702575B (zh) * 2009-11-16 2012-01-18 北京东微世纪科技有限公司 应用于负电压电荷泵的逻辑控制接口电路
US9264053B2 (en) 2011-01-18 2016-02-16 Peregrine Semiconductor Corporation Variable frequency charge pump
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
KR101601214B1 (ko) * 2014-11-11 2016-03-08 현대자동차주식회사 마이크로폰의 바이어싱 회로 및 이를 포함하는 마이크로폰
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US9964975B1 (en) * 2017-09-29 2018-05-08 Nxp Usa, Inc. Semiconductor devices for sensing voltages
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

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US5208776A (en) * 1990-07-31 1993-05-04 Texas Instruments, Incorporated Pulse generation circuit
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US5220534A (en) * 1990-07-31 1993-06-15 Texas Instruments, Incorporated Substrate bias generator system
US5309446A (en) * 1990-07-31 1994-05-03 Texas Instruments Incorporated Test validation method for a semiconductor memory device
US5345422A (en) * 1990-07-31 1994-09-06 Texas Instruments Incorporated Power up detection circuit
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US5336986A (en) * 1992-02-07 1994-08-09 Crosspoint Solutions, Inc. Voltage regulator for field programmable gate arrays
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US5512817A (en) * 1993-12-29 1996-04-30 At&T Corp. Bandgap voltage reference generator

Also Published As

Publication number Publication date
DE69634711T2 (de) 2006-01-19
JPH0951266A (ja) 1997-02-18
EP0732796A2 (de) 1996-09-18
EP0732796A3 (de) 1999-03-24
US5670907A (en) 1997-09-23
JP3765433B2 (ja) 2006-04-12
EP0732796B1 (de) 2005-05-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee