DE69635105D1 - Mehrstufige Speicherschaltungen und entsprechende Lese- und Schreibverfahren - Google Patents

Mehrstufige Speicherschaltungen und entsprechende Lese- und Schreibverfahren

Info

Publication number
DE69635105D1
DE69635105D1 DE69635105T DE69635105T DE69635105D1 DE 69635105 D1 DE69635105 D1 DE 69635105D1 DE 69635105 T DE69635105 T DE 69635105T DE 69635105 T DE69635105 T DE 69635105T DE 69635105 D1 DE69635105 D1 DE 69635105D1
Authority
DE
Germany
Prior art keywords
memory circuits
corresponding reading
stage memory
writing methods
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69635105T
Other languages
English (en)
Inventor
Paolo Rolandi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69635105D1 publication Critical patent/DE69635105D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
DE69635105T 1996-01-31 1996-01-31 Mehrstufige Speicherschaltungen und entsprechende Lese- und Schreibverfahren Expired - Lifetime DE69635105D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830044A EP0788113B1 (de) 1996-01-31 1996-01-31 Mehrstufige Speicherschaltungen und entsprechende Lese- und Schreibverfahren

Publications (1)

Publication Number Publication Date
DE69635105D1 true DE69635105D1 (de) 2005-09-29

Family

ID=8225802

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69635105T Expired - Lifetime DE69635105D1 (de) 1996-01-31 1996-01-31 Mehrstufige Speicherschaltungen und entsprechende Lese- und Schreibverfahren

Country Status (4)

Country Link
US (1) US5859795A (de)
EP (1) EP0788113B1 (de)
JP (1) JP3894380B2 (de)
DE (1) DE69635105D1 (de)

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US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US6857099B1 (en) * 1996-09-18 2005-02-15 Nippon Steel Corporation Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
JPH11224491A (ja) * 1997-12-03 1999-08-17 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
US6363008B1 (en) 2000-02-17 2002-03-26 Multi Level Memory Technology Multi-bit-cell non-volatile memory with maximized data capacity
US6297988B1 (en) * 2000-02-25 2001-10-02 Advanced Micro Devices, Inc. Mode indicator for multi-level memory
EP1193715A1 (de) * 2000-09-20 2002-04-03 STMicroelectronics S.r.l. Nichtflüchtige Speicheranordnung mit Teilen von verschiedener Zuverlässigkeit, Zugriffzeit und Kapazität
US6466476B1 (en) 2001-01-18 2002-10-15 Multi Level Memory Technology Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US7554842B2 (en) * 2001-09-17 2009-06-30 Sandisk Corporation Multi-purpose non-volatile memory card
US6643169B2 (en) 2001-09-18 2003-11-04 Intel Corporation Variable level memory
JP4259922B2 (ja) * 2002-07-30 2009-04-30 シャープ株式会社 半導体記憶装置
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US6778442B1 (en) * 2003-04-24 2004-08-17 Advanced Micro Devices, Inc. Method of dual cell memory device operation for improved end-of-life read margin
US8019928B2 (en) * 2004-02-15 2011-09-13 Sandisk Il Ltd. Method of managing a multi-bit-cell flash memory
US7716413B2 (en) * 2004-02-15 2010-05-11 Sandisk Il Ltd. Method of making a multi-bit-cell flash memory
JP4720152B2 (ja) * 2004-11-17 2011-07-13 パナソニック株式会社 不揮発性メモリシステム
US7366013B2 (en) * 2005-12-09 2008-04-29 Micron Technology, Inc. Single level cell programming in a multiple level cell non-volatile memory device
JP2007200388A (ja) * 2006-01-24 2007-08-09 Megachips Lsi Solutions Inc 半導体記憶装置及び半導体記憶装置の使用方法
US7486537B2 (en) 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
WO2008016419A2 (en) * 2006-07-31 2008-02-07 Sandisk 3D Llc Mixed-use memory array and method for use therewith
WO2008016421A2 (en) * 2006-07-31 2008-02-07 Sandisk 3D Llc Mixed-use memory array with different data states and method for use therewith
US7450414B2 (en) 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
TWI368224B (en) * 2007-03-19 2012-07-11 A Data Technology Co Ltd Wear-leveling management and file distribution management of hybrid density memory
US20090055605A1 (en) 2007-08-20 2009-02-26 Zining Wu Method and system for object-oriented data storage
US8583857B2 (en) 2007-08-20 2013-11-12 Marvell World Trade Ltd. Method and system for object-oriented data storage
US7545673B2 (en) 2007-09-25 2009-06-09 Sandisk Il Ltd. Using MLC flash as SLC by writing dummy data
JP2009104729A (ja) * 2007-10-24 2009-05-14 Toshiba Corp 不揮発性半導体記憶装置
US8832408B2 (en) * 2007-10-30 2014-09-09 Spansion Llc Non-volatile memory array partitioning architecture and method to utilize single level cells and multi-level cells within the same memory
KR101368694B1 (ko) * 2008-01-22 2014-03-03 삼성전자주식회사 메모리 프로그래밍 장치 및 방법
KR20090097673A (ko) * 2008-03-12 2009-09-16 삼성전자주식회사 연판정 값에 기반하여 메모리에 저장된 데이터를 검출하는장치
KR101038167B1 (ko) * 2008-09-09 2011-05-31 가부시끼가이샤 도시바 프로세서로부터 메모리로의 액세스를 관리하는 메모리 관리 장치를 포함하는 정보 처리 장치 및 메모리 관리 방법
US8127091B2 (en) * 2008-10-30 2012-02-28 Micron Technology, Inc. Programming memory cells with additional data for increased threshold voltage resolution
US7916533B2 (en) * 2009-06-24 2011-03-29 Sandisk Corporation Forecasting program disturb in memory by detecting natural threshold voltage distribution
US8634240B2 (en) * 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8402203B2 (en) * 2009-12-31 2013-03-19 Seagate Technology Llc Systems and methods for storing data in a multi-level cell solid state storage device
US8089807B1 (en) * 2010-11-22 2012-01-03 Ge Aviation Systems, Llc Method and system for data storage
US9318166B2 (en) 2011-07-22 2016-04-19 SanDisk Technologies, Inc. Systems and methods of storing data
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
CN104956313B (zh) 2013-01-29 2018-02-09 马维尔国际贸易有限公司 用于基于数据分类将数据存储至固态存储设备的方法和装置
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
US9940052B2 (en) 2016-09-14 2018-04-10 Micron Technology, Inc. Memory device configuration commands
US11487507B2 (en) * 2020-05-06 2022-11-01 Qualcomm Incorporated Multi-bit compute-in-memory (CIM) arrays employing bit cell circuits optimized for accuracy and power efficiency

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603711B2 (ja) * 1980-04-30 1985-01-30 沖電気工業株式会社 読み出し専用記憶装置
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5263140A (en) * 1991-01-23 1993-11-16 Silicon Graphics, Inc. Variable page size per entry translation look-aside buffer
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
AU2598895A (en) * 1994-06-02 1996-01-04 Intel Corporation Dynamic single to multiple bit per cell memory
US5671388A (en) * 1995-05-03 1997-09-23 Intel Corporation Method and apparatus for performing write operations in multi-level cell storage device

Also Published As

Publication number Publication date
EP0788113B1 (de) 2005-08-24
JPH09311823A (ja) 1997-12-02
JP3894380B2 (ja) 2007-03-22
US5859795A (en) 1999-01-12
EP0788113A1 (de) 1997-08-06

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