DE69636016D1 - Verharen zur Herstellung einer Lichtemfindliche Vorrichtung - Google Patents

Verharen zur Herstellung einer Lichtemfindliche Vorrichtung

Info

Publication number
DE69636016D1
DE69636016D1 DE69636016T DE69636016T DE69636016D1 DE 69636016 D1 DE69636016 D1 DE 69636016D1 DE 69636016 T DE69636016 T DE 69636016T DE 69636016 T DE69636016 T DE 69636016T DE 69636016 D1 DE69636016 D1 DE 69636016D1
Authority
DE
Germany
Prior art keywords
verharen
produce
light
sensitive device
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69636016T
Other languages
English (en)
Other versions
DE69636016T2 (de
Inventor
Taro Itatani
Kazuhiko Matsumoto
Masami Ishii
Tadashi Nakagawa
Yoshinobu Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7008083A external-priority patent/JP2705757B2/ja
Priority claimed from JP808295A external-priority patent/JP2666888B2/ja
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Publication of DE69636016D1 publication Critical patent/DE69636016D1/de
Application granted granted Critical
Publication of DE69636016T2 publication Critical patent/DE69636016T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
DE69636016T 1995-01-23 1996-01-22 Verharen zur Herstellung einer Lichtempfangsvorrichtung Expired - Lifetime DE69636016T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7008083A JP2705757B2 (ja) 1995-01-23 1995-01-23 受光素子
JP808295A JP2666888B2 (ja) 1995-01-23 1995-01-23 光素子の製造方法
JP808395 1995-01-23
JP808295 1995-01-23

Publications (2)

Publication Number Publication Date
DE69636016D1 true DE69636016D1 (de) 2006-05-18
DE69636016T2 DE69636016T2 (de) 2006-11-09

Family

ID=26342522

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69636016T Expired - Lifetime DE69636016T2 (de) 1995-01-23 1996-01-22 Verharen zur Herstellung einer Lichtempfangsvorrichtung
DE69614583T Expired - Lifetime DE69614583T2 (de) 1995-01-23 1996-01-22 Lichtempfängliche Vorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69614583T Expired - Lifetime DE69614583T2 (de) 1995-01-23 1996-01-22 Lichtempfängliche Vorrichtung

Country Status (3)

Country Link
US (3) US5661328A (de)
EP (2) EP0723302B1 (de)
DE (2) DE69636016T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19737498C2 (de) * 1997-08-28 2002-09-12 Deutsche Telekom Ag Optische Verbindung
FR2803950B1 (fr) 2000-01-14 2002-03-01 Centre Nat Rech Scient Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif
US6445021B1 (en) * 2000-09-20 2002-09-03 International Business Machines Corporation Negative differential resistance reoxidized nitride silicon-based photodiode and method
US6403990B1 (en) * 2001-03-27 2002-06-11 Agilent Technologies, Inc. Short turn-off time photoconductive switch
US7072534B2 (en) * 2002-07-22 2006-07-04 Applied Materials, Inc. Optical ready substrates
US7043106B2 (en) * 2002-07-22 2006-05-09 Applied Materials, Inc. Optical ready wafers
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
FR2842945B1 (fr) * 2002-07-25 2005-11-11 Centre Nat Rech Scient Dispositif de photodetection de type msm et a cavite resonnante comprenant un miroir a reseau d'electrodes metalliques
KR20060026027A (ko) * 2003-05-29 2006-03-22 어플라이드 머티어리얼스, 인코포레이티드 광신호의 연속 라우팅
US7103079B2 (en) * 2003-06-27 2006-09-05 Applied Materials, Inc. Pulsed quantum dot laser system with low jitter
US20050016446A1 (en) 2003-07-23 2005-01-27 Abbott John S. CaF2 lenses with reduced birefringence
WO2005092037A2 (en) * 2004-03-22 2005-10-06 Research Foundation Of The City University Of New York High responsivity high bandwidth metal-semiconductor-metal optoelectronic device
US7272273B2 (en) * 2005-01-21 2007-09-18 Neophotonics Corporation Photodetector coupled to a planar waveguide
US20060222024A1 (en) * 2005-03-15 2006-10-05 Gray Allen L Mode-locked semiconductor lasers with quantum-confined active region
US20060227825A1 (en) * 2005-04-07 2006-10-12 Nl-Nanosemiconductor Gmbh Mode-locked quantum dot laser with controllable gain properties by multiple stacking
WO2007027615A1 (en) * 2005-09-01 2007-03-08 Applied Materials, Inc. Ridge technique for fabricating an optical detector and an optical waveguide
WO2007065614A2 (en) * 2005-12-07 2007-06-14 Innolume Gmbh Laser source with broadband spectrum emission
US7561607B2 (en) * 2005-12-07 2009-07-14 Innolume Gmbh Laser source with broadband spectrum emission
US7835408B2 (en) 2005-12-07 2010-11-16 Innolume Gmbh Optical transmission system
KR20090050696A (ko) * 2007-11-16 2009-05-20 삼성전기주식회사 광배선 기판 및 그 제조방법
WO2010065731A2 (en) * 2008-12-03 2010-06-10 Innolume Gmbh Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser
US8860078B2 (en) 2012-05-14 2014-10-14 The Johns Hopkins University Simplified devices utilizing novel pn-semiconductor structures
EP2852984A4 (de) * 2012-05-14 2015-10-14 Univ Johns Hopkins Vereinfachte vorrichtungen mit neuartigen pn-halbleiterstrukturen
US8785855B2 (en) * 2012-10-16 2014-07-22 Uvic Industry Partnerships Inc. Interlaced terahertz transceiver using plasmonic resonance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1299087B (de) * 1966-05-10 1969-07-10 Siemens Ag Feldeffekt-Fototransistor
US3949463A (en) * 1973-02-13 1976-04-13 Communications Satellite Corporation (Comsat) Method of applying an anti-reflective coating to a solar cell
JPS6386481A (ja) * 1986-09-30 1988-04-16 Agency Of Ind Science & Technol 高感度横型受光素子
JPS63229867A (ja) * 1987-03-11 1988-09-26 ハネウエル・インコーポレーテツド チヤネル導波路形シヨツトキ・フオトダイオード
JPH02129970A (ja) * 1988-11-09 1990-05-18 Mitsubishi Electric Corp ホトダイオード及びその製造方法

Also Published As

Publication number Publication date
EP0723302A3 (de) 1997-04-09
EP0926742A2 (de) 1999-06-30
EP0723302A2 (de) 1996-07-24
US5945720A (en) 1999-08-31
DE69614583T2 (de) 2002-06-27
US5661328A (en) 1997-08-26
US5895227A (en) 1999-04-20
DE69614583D1 (de) 2001-09-27
EP0723302B1 (de) 2001-08-22
DE69636016T2 (de) 2006-11-09
EP0926742B1 (de) 2006-04-05
EP0926742A3 (de) 1999-09-01

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Legal Events

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