DE69637103D1 - Sensor mit aktivem Bildelement, der mit einer Fotodiode vom Typ "befestigende Schicht" integriert ist - Google Patents

Sensor mit aktivem Bildelement, der mit einer Fotodiode vom Typ "befestigende Schicht" integriert ist

Info

Publication number
DE69637103D1
DE69637103D1 DE69637103T DE69637103T DE69637103D1 DE 69637103 D1 DE69637103 D1 DE 69637103D1 DE 69637103 T DE69637103 T DE 69637103T DE 69637103 T DE69637103 T DE 69637103T DE 69637103 D1 DE69637103 D1 DE 69637103D1
Authority
DE
Germany
Prior art keywords
sensor
picture element
fixing layer
type photodiode
element integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637103T
Other languages
English (en)
Other versions
DE69637103T2 (de
Inventor
Paul P Lee
Robert M Guidash
Teh-Hsuang Lee
Eric Gordon Stevens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE69637103D1 publication Critical patent/DE69637103D1/de
Publication of DE69637103T2 publication Critical patent/DE69637103T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
DE69637103T 1995-04-13 1996-04-10 Mit einer pinned-fotodiode integrierter aktiver pixelsensor Expired - Lifetime DE69637103T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/421,173 US5625210A (en) 1995-04-13 1995-04-13 Active pixel sensor integrated with a pinned photodiode
US421173 1995-04-13

Publications (2)

Publication Number Publication Date
DE69637103D1 true DE69637103D1 (de) 2007-07-12
DE69637103T2 DE69637103T2 (de) 2008-01-24

Family

ID=23669471

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69637103T Expired - Lifetime DE69637103T2 (de) 1995-04-13 1996-04-10 Mit einer pinned-fotodiode integrierter aktiver pixelsensor

Country Status (4)

Country Link
US (5) US5625210A (de)
EP (1) EP0738010B1 (de)
JP (2) JPH08335688A (de)
DE (1) DE69637103T2 (de)

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JP2007110162A (ja) 2007-04-26
US6027955A (en) 2000-02-22
DE69637103T2 (de) 2008-01-24
US5841159A (en) 1998-11-24
US5625210A (en) 1997-04-29
EP0738010A3 (de) 1998-10-14
US6100551A (en) 2000-08-08
JPH08335688A (ja) 1996-12-17
EP0738010A2 (de) 1996-10-16
US5904493A (en) 1999-05-18

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