DE69637671D1 - Gegentakt-leistungsverstärker - Google Patents

Gegentakt-leistungsverstärker

Info

Publication number
DE69637671D1
DE69637671D1 DE69637671T DE69637671T DE69637671D1 DE 69637671 D1 DE69637671 D1 DE 69637671D1 DE 69637671 T DE69637671 T DE 69637671T DE 69637671 T DE69637671 T DE 69637671T DE 69637671 D1 DE69637671 D1 DE 69637671D1
Authority
DE
Germany
Prior art keywords
power amplifier
clock power
against clock
amplifier
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69637671T
Other languages
English (en)
Inventor
Clifford A Mohwinkel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Endgate Corp
Endgate Technology Corp
Original Assignee
Endgate Corp
Endgate Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Endgate Corp, Endgate Technology Corp filed Critical Endgate Corp
Application granted granted Critical
Publication of DE69637671D1 publication Critical patent/DE69637671D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1903—Structure including wave guides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/543—A transmission line being used as coupling element between two amplifying stages
DE69637671T 1995-11-08 1996-10-25 Gegentakt-leistungsverstärker Expired - Fee Related DE69637671D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/555,131 US5623231A (en) 1994-09-26 1995-11-08 Push-pull power amplifier
PCT/US1996/017358 WO1997017755A1 (en) 1995-11-08 1996-10-25 Push-pull power amplifier

Publications (1)

Publication Number Publication Date
DE69637671D1 true DE69637671D1 (de) 2008-10-16

Family

ID=24216095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69637671T Expired - Fee Related DE69637671D1 (de) 1995-11-08 1996-10-25 Gegentakt-leistungsverstärker

Country Status (10)

Country Link
US (1) US5623231A (de)
EP (3) EP0885457A4 (de)
JP (3) JP4129697B2 (de)
AR (1) AR004149A1 (de)
AU (1) AU711010B2 (de)
CA (1) CA2236993C (de)
DE (1) DE69637671D1 (de)
IL (2) IL124175A (de)
TW (1) TW431065B (de)
WO (3) WO1997017755A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK124690D0 (da) 1990-05-18 1990-05-18 Henning Rud Andersen Klapprotes til implantering i kroppen for erstatning af naturlig klap samt kateter til brug ved implantering af en saadan klapprotese
US5623231A (en) * 1994-09-26 1997-04-22 Endgate Corporation Push-pull power amplifier
US6265937B1 (en) * 1994-09-26 2001-07-24 Endgate Corporation Push-pull amplifier with dual coplanar transmission line
JP2000340749A (ja) * 1999-05-27 2000-12-08 Tdk Corp 高周波ｉｃ部品及びその製造方法
US6300827B1 (en) * 1999-12-09 2001-10-09 Maxim Integrated Products, Inc. Method and apparatus for cascaded ground return amplifier
US6917245B2 (en) 2000-09-12 2005-07-12 Silicon Laboratories, Inc. Absolute power detector
US6392488B1 (en) 2000-09-12 2002-05-21 Silicon Laboratories, Inc. Dual oxide gate device and method for providing the same
US6462620B1 (en) 2000-09-12 2002-10-08 Silicon Laboratories, Inc. RF power amplifier circuitry and method for amplifying signals
US6448847B1 (en) 2000-09-12 2002-09-10 Silicon Laboratories, Inc. Apparatus and method for providing differential-to-single ended conversion and impedance transformation
US6549071B1 (en) * 2000-09-12 2003-04-15 Silicon Laboratories, Inc. Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices
US6362606B1 (en) 2000-09-12 2002-03-26 Silicon Laboratories, Inc Method and apparatus for regulating a voltage
AU2001292953A1 (en) * 2000-09-22 2002-04-02 U.S. Monolithics, L.L.C. Mmic folded power amplifier
JP3539391B2 (ja) 2001-03-15 2004-07-07 株式会社村田製作所 高周波増幅器、高周波モジュール、および通信装置
US6392486B1 (en) * 2001-08-14 2002-05-21 Xilinx, Inc. Low-noise common-gate amplifier for wireless communications
US6828859B2 (en) * 2001-08-17 2004-12-07 Silicon Laboratories, Inc. Method and apparatus for protecting devices in an RF power amplifier
US6893460B2 (en) 2001-10-11 2005-05-17 Percutaneous Valve Technologies Inc. Implantable prosthetic valve
US6894565B1 (en) 2002-12-03 2005-05-17 Silicon Laboratories, Inc. Fast settling power amplifier regulator
US6897730B2 (en) * 2003-03-04 2005-05-24 Silicon Laboratories Inc. Method and apparatus for controlling the output power of a power amplifier
JP4220982B2 (ja) 2005-06-08 2009-02-04 富士通株式会社 分布型増幅器
WO2009026704A1 (en) 2007-08-29 2009-03-05 Its Electronic Inc. Splitter/combiner and waveguide amplifier incorporating splitter/combiner
DE102010009984A1 (de) * 2009-12-28 2011-06-30 Rohde & Schwarz GmbH & Co. KG, 81671 Verstärkerbaustein mit einem Kompensationselement
CN102281220B (zh) 2010-06-12 2015-04-29 华为技术有限公司 数据流处理方法、设备及系统
CN102130657A (zh) * 2010-09-14 2011-07-20 华为技术有限公司 一种功率放大器、不对称达赫笛功率放大设备和基站
US8461930B2 (en) * 2011-08-18 2013-06-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Monolithic microwave integrated circuit (MMIC) including air bridge coupler
US9202660B2 (en) 2013-03-13 2015-12-01 Teledyne Wireless, Llc Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes
US10357361B2 (en) 2016-09-15 2019-07-23 Edwards Lifesciences Corporation Heart valve pinch devices and delivery systems

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436605A (en) * 1966-11-23 1969-04-01 Texas Instruments Inc Packaging process for semiconductor devices and article of manufacture
NL6914548A (de) * 1968-11-27 1970-05-29
BE790941A (fr) * 1971-11-05 1973-03-01 Rca Corp Pastilles formant circuits semiconducteurs pour utilisation dans des circuits hybrides
GB1489873A (en) * 1973-12-07 1977-10-26 Microwave & Electronic Syst Device including ferrimagnetic coupling element
US3995239A (en) * 1975-09-08 1976-11-30 Rockwell International Corporation Transition apparatus
US4097814A (en) * 1977-06-17 1978-06-27 Westinghouse Electric Corp. Push-pull power amplifier
US4135168A (en) * 1978-02-02 1979-01-16 Microwave Semiconductor Corporation Reverse channel GaAsFET oscillator
US4182636A (en) * 1978-06-30 1980-01-08 International Business Machines Corporation Method of fabricating self-aligned contact vias
US4290078A (en) * 1979-05-30 1981-09-15 Xerox Corporation High voltage MOSFET without field plate structure
JPS5732676A (en) * 1980-08-06 1982-02-22 Mitsubishi Electric Corp High power gaas field effect transistor
FR2489624B1 (fr) * 1980-09-02 1985-06-14 Thomson Csf Amplificateur monolithique comportant un systeme de division et de recombinaison de puissance groupant plusieurs transistors
US4376287A (en) * 1980-10-29 1983-03-08 Rca Corporation Microwave power circuit with an active device mounted on a heat dissipating substrate
JPS57154859A (en) * 1981-03-19 1982-09-24 Mitsubishi Electric Corp Composite semiconductor element
FR2524712B1 (fr) * 1982-03-31 1985-06-07 Radiotechnique Compelec Circuit hyperfrequence a condensateur integre et application a un circuit d'alimentation
EP0117434A1 (de) * 1983-01-28 1984-09-05 Microwave Semiconductor Corp. Hybrides Mikrowellenteilsystem
US4688000A (en) * 1984-05-29 1987-08-18 Donovan John S Non biased push-pull amplifiers
FR2567695B1 (fr) * 1984-07-10 1986-11-14 Thomson Csf Structure d'un etage d'amplificateur equilibre fonctionnant en hyperfrequences
US4612408A (en) * 1984-10-22 1986-09-16 Sera Solar Corporation Electrically isolated semiconductor integrated photodiode circuits and method
US5266963A (en) * 1985-01-17 1993-11-30 British Aerospace Public Limited Company Integrated antenna/mixer for the microwave and millimetric wavebands
US4739519A (en) * 1985-10-31 1988-04-19 Narda Western Operations Coplanar microwave balun, multiplexer and mixer assemblies
JPH01269305A (ja) * 1988-04-21 1989-10-26 Matsushita Electron Corp 半導体装置
US4916410A (en) * 1989-05-01 1990-04-10 E-Systems, Inc. Hybrid-balun for splitting/combining RF power
JPH0355877A (ja) * 1989-07-24 1991-03-11 Murata Mfg Co Ltd 化合物半導体装置
US5093667A (en) * 1989-10-16 1992-03-03 Itt Corporation T/R module with error correction
US5066926A (en) * 1990-06-26 1991-11-19 Pacific Monolithics Segmented cascode HBT for microwave-frequency power amplifiers
US5115245A (en) * 1990-09-04 1992-05-19 Hughes Aircraft Company Single substrate microwave radar transceiver including flip-chip integrated circuits
US5149671A (en) * 1990-12-03 1992-09-22 Grumman Aerospace Corporation Method for forming multilayer indium bump contact
US5087896A (en) * 1991-01-16 1992-02-11 Hughes Aircraft Company Flip-chip MMIC oscillator assembly with off-chip coplanar waveguide resonant inductor
US5142239A (en) * 1991-05-20 1992-08-25 Motorola, Inc. High frequency linear amplifier assembly
EP0541288B1 (de) * 1991-11-05 1998-07-08 Fu-Chieh Hsu Redundanzarchitektur für Schaltungsmodul
US5194833A (en) * 1991-11-15 1993-03-16 Motorola, Inc. Airbridge compensated microwave conductors
US5394490A (en) * 1992-08-11 1995-02-28 Hitachi, Ltd. Semiconductor device having an optical waveguide interposed in the space between electrode members
JPH06125208A (ja) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp マイクロ波集積回路およびその製造方法
US5366906A (en) * 1992-10-16 1994-11-22 Martin Marietta Corporation Wafer level integration and testing
US5426400A (en) * 1993-06-17 1995-06-20 The United States Of America As Represented By The Secretary Of The Navy Broadband coplanar waveguide to slotline transition having a slot cavity
US5491449A (en) * 1993-11-19 1996-02-13 Endgate Technology Corporation Dual-sided push-pull amplifier
US5477188A (en) * 1994-07-14 1995-12-19 Eni Linear RF power amplifier
US5610563A (en) * 1994-09-26 1997-03-11 Endgate Corporation Slot line to CPW circuit structure
US5528203A (en) * 1994-09-26 1996-06-18 Endgate Corporation Coplanar waveguide-mounted flip chip
US5623231A (en) * 1994-09-26 1997-04-22 Endgate Corporation Push-pull power amplifier

Also Published As

Publication number Publication date
AU7599196A (en) 1997-05-29
WO1997017720A3 (en) 1997-06-05
US5623231A (en) 1997-04-22
CA2236993C (en) 2000-08-15
AU7526596A (en) 1997-05-29
EP0885483B1 (de) 2008-09-03
WO1997017720A2 (en) 1997-05-15
WO1997017755A1 (en) 1997-05-15
EP0885483A1 (de) 1998-12-23
WO1997017721A2 (en) 1997-05-15
JP3306664B2 (ja) 2002-07-24
JP2000515312A (ja) 2000-11-14
EP0860024A4 (de) 2006-10-25
AU694066B2 (en) 1998-07-09
AU711010B2 (en) 1999-10-07
TW431065B (en) 2001-04-21
EP0885457A4 (de) 2007-06-13
JP2000515313A (ja) 2000-11-14
JP2000500309A (ja) 2000-01-11
AR004149A1 (es) 1998-09-30
EP0860024A2 (de) 1998-08-26
EP0885457A2 (de) 1998-12-23
IL124233A (en) 2000-11-21
IL124175A (en) 2002-12-01
WO1997017721A3 (en) 1997-06-19
EP0885483A4 (de) 2004-03-17
JP4129697B2 (ja) 2008-08-06

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