DE69637898D1 - Photoelektrischer Umwandler - Google Patents

Photoelektrischer Umwandler

Info

Publication number
DE69637898D1
DE69637898D1 DE69637898T DE69637898T DE69637898D1 DE 69637898 D1 DE69637898 D1 DE 69637898D1 DE 69637898 T DE69637898 T DE 69637898T DE 69637898 T DE69637898 T DE 69637898T DE 69637898 D1 DE69637898 D1 DE 69637898D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637898T
Other languages
English (en)
Inventor
Isao Kobayashi
Noriyuki Kaifu
Shinichi Takeda
Kazuaki Tashiro
Tadao Endo
Toshio Kameshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69637898D1 publication Critical patent/DE69637898D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/41—Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
DE69637898T 1995-09-05 1996-09-04 Photoelektrischer Umwandler Expired - Lifetime DE69637898D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22785295 1995-09-05
JP22785195 1995-09-05
JP23287296A JP3183390B2 (ja) 1995-09-05 1996-09-03 光電変換装置及びそれを用いた撮像装置

Publications (1)

Publication Number Publication Date
DE69637898D1 true DE69637898D1 (de) 2009-05-20

Family

ID=27331329

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69637703T Expired - Lifetime DE69637703D1 (de) 1995-09-05 1996-09-04 Photoelektrischer Umwandler
DE69637898T Expired - Lifetime DE69637898D1 (de) 1995-09-05 1996-09-04 Photoelektrischer Umwandler

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69637703T Expired - Lifetime DE69637703D1 (de) 1995-09-05 1996-09-04 Photoelektrischer Umwandler

Country Status (5)

Country Link
US (9) US5914485A (de)
EP (4) EP2317556A3 (de)
JP (1) JP3183390B2 (de)
DE (2) DE69637703D1 (de)
TW (1) TW551616U (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3066944B2 (ja) 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
JP4557763B2 (ja) * 1995-09-05 2010-10-06 キヤノン株式会社 光電変換装置及び放射線撮像装置
JP3183390B2 (ja) 1995-09-05 2001-07-09 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
US5912465A (en) * 1995-09-05 1999-06-15 Canon Kabushiki Kaisha Photoelectric converter
JP4750878B2 (ja) * 1995-09-05 2011-08-17 キヤノン株式会社 光電変換装置及び放射線撮像装置
US6448561B1 (en) 1996-02-26 2002-09-10 Canon Kabushiki Kaisha Photoelectric conversion apparatus and driving method of the apparatus
JP3620936B2 (ja) * 1996-10-11 2005-02-16 浜松ホトニクス株式会社 裏面照射型受光デバイスおよびその製造方法
JP3847889B2 (ja) * 1997-04-08 2006-11-22 キヤノン株式会社 光電変換装置
JP3805100B2 (ja) * 1997-04-10 2006-08-02 キヤノン株式会社 光電変換装置
JP3847918B2 (ja) * 1997-10-01 2006-11-22 キヤノン株式会社 光電変換装置
JP3636579B2 (ja) 1997-11-04 2005-04-06 キヤノン株式会社 光電変換装置、光電変換装置の駆動方法及びその光電変換装置を有するシステム
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
JP2000046645A (ja) * 1998-07-31 2000-02-18 Canon Inc 光電変換装置及びその製造方法及びｘ線撮像装置
AU4653599A (en) * 1998-10-30 2000-05-22 Hamamatsu Photonics K.K. Solid-state imaging device and solid-state imaging array
US7129985B1 (en) 1998-11-24 2006-10-31 Canon Kabushiki Kaisha Image sensing apparatus arranged on a single substrate
JP2000184282A (ja) * 1998-12-15 2000-06-30 Canon Inc 撮像装置、撮像装置の駆動方法、画像処理方法、情報記録媒体、及び画像処理システム
US6051867A (en) * 1999-05-06 2000-04-18 Hewlett-Packard Company Interlayer dielectric for passivation of an elevated integrated circuit sensor structure
JP4181703B2 (ja) 1999-09-02 2008-11-19 キヤノン株式会社 光電変換装置
JP4621161B2 (ja) * 2000-05-08 2011-01-26 キヤノン株式会社 半導体装置
JP3984808B2 (ja) 2000-09-07 2007-10-03 キヤノン株式会社 信号処理装置及びそれを用いた撮像装置並びに放射線撮像システム
JP4724313B2 (ja) * 2001-05-18 2011-07-13 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
JP4208491B2 (ja) * 2002-06-11 2009-01-14 キヤノン株式会社 撮像装置及び指紋認識装置
JP4109944B2 (ja) * 2002-09-20 2008-07-02 キヤノン株式会社 固体撮像装置の製造方法
EP1654334A1 (de) * 2003-08-01 2006-05-10 Dow Corning Corporation Siliconbasierte dielektrische beschichtungen und filme für anwendungen auf dem gebiet der fotovoltaik
EP1542272B1 (de) * 2003-10-06 2016-07-20 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und deren Herstellungsverfahren
US7145152B2 (en) * 2003-10-14 2006-12-05 General Electric Company Storage capacitor design for a solid state imager
US7521683B2 (en) * 2003-12-10 2009-04-21 Koninklijke Philips Electronics N.V. X-ray detector
JP4455435B2 (ja) * 2004-08-04 2010-04-21 キヤノン株式会社 固体撮像装置及び同固体撮像装置を用いたカメラ
JP4498149B2 (ja) * 2005-01-17 2010-07-07 キヤノン株式会社 画像読み取り装置
JP5197915B2 (ja) * 2005-06-20 2013-05-15 浜松ホトニクス株式会社 イメージセンサ
JP4142066B2 (ja) * 2006-06-01 2008-08-27 エプソンイメージングデバイス株式会社 電気光学装置および電子機器
US20080308585A1 (en) * 2006-09-27 2008-12-18 John Foley Nozzle
US7751863B2 (en) * 2007-02-06 2010-07-06 Glumetrics, Inc. Optical determination of ph and glucose
JP2010517693A (ja) 2007-02-06 2010-05-27 グルメトリクス， インコーポレイテッド 血中グルコース濃度のレシオメトリック測定のための光学系及び方法
US8088097B2 (en) 2007-11-21 2012-01-03 Glumetrics, Inc. Use of an equilibrium intravascular sensor to achieve tight glycemic control
JP2007288777A (ja) * 2007-03-27 2007-11-01 Canon Inc 光電変換装置及びその製造方法並びにｘ線撮像装置
WO2008141241A1 (en) 2007-05-10 2008-11-20 Glumetrics, Inc. Equilibrium non-consuming fluorescence sensor for real time intravascular glucose measurement
WO2008141243A2 (en) * 2007-05-10 2008-11-20 Glumetrics, Inc. Device and methods for calibrating analyte sensors
JP2008306080A (ja) * 2007-06-11 2008-12-18 Hitachi Ltd 光センサ素子、およびこれを用いた光センサ装置、画像表示装置
US7495227B2 (en) * 2007-07-10 2009-02-24 General Electric Company Digital x-ray detectors
JP4971091B2 (ja) * 2007-09-27 2012-07-11 富士フイルム株式会社 放射線画像撮影装置
FR2921756B1 (fr) * 2007-09-27 2009-12-25 Commissariat Energie Atomique Matrice de pixels dotes de regulateurs de tension.
KR101393633B1 (ko) * 2007-10-31 2014-05-09 삼성디스플레이 주식회사 엑스레이 검출 패널, 엑스레이 검출기 및 엑스레이검출기의 구동 방법
WO2009129186A2 (en) 2008-04-17 2009-10-22 Glumetrics, Inc. Sensor for percutaneous intravascular deployment without an indwelling cannula
JP2009272540A (ja) * 2008-05-09 2009-11-19 Canon Inc 電子機器
US8124938B1 (en) * 2008-08-18 2012-02-28 X-Scan Imaging Corporation Linear X-ray detector with monolithic detector chip including both photodiode array and peripheral circuits spaced apart
KR101273972B1 (ko) 2008-10-03 2013-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP2013506503A (ja) * 2009-09-30 2013-02-28 グルメトリクス， インコーポレイテッド 抗血栓性コーティングを備えたセンサー
US8467843B2 (en) 2009-11-04 2013-06-18 Glumetrics, Inc. Optical sensor configuration for ratiometric correction of blood glucose measurement
US7902512B1 (en) * 2009-12-04 2011-03-08 Carestream Health, Inc. Coplanar high fill factor pixel architecture
US20110152658A1 (en) * 2009-12-17 2011-06-23 Glumetrics, Inc. Identification of aberrant measurements of in vivo glucose concentration using temperature
WO2011145171A1 (ja) * 2010-05-18 2011-11-24 キヤノン株式会社 撮像システム及びその制御方法
CN102736095A (zh) * 2011-03-30 2012-10-17 Ge医疗系统环球技术有限公司 用于x射线探测器的成像平板及其模块布置方法
US9270904B2 (en) * 2012-08-28 2016-02-23 General Electric Company X-ray system and method with digital image acquisition using a photovoltaic device
EP3041589B1 (de) 2013-09-11 2018-08-08 Cybex International, Inc. Übungsvorrichtung
FR3013175B1 (fr) * 2013-11-08 2015-11-06 Trixell Circuit integre presentant plusieurs blocs identiques identifies
EP2874187B1 (de) * 2013-11-15 2020-01-01 Evonik Operations GmbH Dünnschichttransistor mit niedrigem kontaktwiderstand
EP3116612B1 (de) 2014-03-11 2019-09-04 Cybex International, Inc. Herunterziehbare übungsvorrichtung
US9457224B2 (en) 2014-11-11 2016-10-04 Cybex International, Inc. Exercise apparatus
JP6731874B2 (ja) * 2017-03-22 2020-07-29 富士フイルム株式会社 放射線検出器及び放射線画像撮影装置
EP3444843B8 (de) 2017-08-14 2021-03-24 ams International AG Anordnung zur detektion von elektromagnetischer strahlung und verfahren zur herstellung einer anordnung zur detektion von elektromagnetischer strahlung
CN110346039A (zh) * 2018-04-02 2019-10-18 群创光电股份有限公司 光线检测装置及光线检测方法
FR3102885B1 (fr) * 2019-10-31 2022-03-18 Trixell Capteur photosensible à capteurs élémentaires raboutés

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376888A (en) 1978-04-20 1983-03-15 Canon Kabushiki Kaisha Photoelectric conversion type information processing device
JPS6223944A (ja) 1985-07-22 1987-01-31 Nippon Yakin Kogyo Co Ltd 酸化ニッケル鉱石からフェロニッケルルッペを製造する方法
US5306648A (en) 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
DE3751242T2 (de) 1986-01-24 1995-09-14 Canon Kk Photoelektrischer Wandler.
JPS636617A (ja) 1986-06-26 1988-01-12 Canon Inc デ−タ処理装置
JP2680002B2 (ja) * 1987-11-14 1997-11-19 キヤノン株式会社 光電変換装置
JPH01302972A (ja) 1988-05-31 1989-12-06 Canon Inc 撮像素子
US5233442A (en) * 1989-06-07 1993-08-03 Canon Kabushiki Kaisha Photosensor and image reading device with improved correction means for signal correction and image reading method
JP2929550B2 (ja) * 1989-06-07 1999-08-03 キヤノン株式会社 光センサ及び画像読取装置
JP2911519B2 (ja) * 1990-02-06 1999-06-23 キヤノン株式会社 光電変換装置
JP2991354B2 (ja) * 1990-11-07 1999-12-20 キヤノン株式会社 画像読取装置およびそれを備えた画像情報処理装置
GB9202693D0 (en) * 1992-02-08 1992-03-25 Philips Electronics Uk Ltd A method of manufacturing a large area active matrix array
JP3396039B2 (ja) 1992-04-20 2003-04-14 オリンパス光学工業株式会社 固体撮像装置
JPH05316438A (ja) * 1992-05-11 1993-11-26 Sony Corp 固体撮像装置
JPH06104434A (ja) 1992-09-18 1994-04-15 Sharp Corp 薄膜トランジスタ素子，アクティブマトリクス表示装置及びイメージセンサ
JP3154850B2 (ja) 1992-12-21 2001-04-09 キヤノン株式会社 光電変換装置及びその製造方法
US5333690A (en) * 1992-12-31 1994-08-02 Shell Oil Company Cementing with blast furnace slag using spacer
JPH0794697A (ja) 1993-09-20 1995-04-07 Fuji Xerox Co Ltd ２次元イメ−ジセンサ
JP3478612B2 (ja) * 1993-11-16 2003-12-15 浜松ホトニクス株式会社 半導体デバイス検査システム
JP3066944B2 (ja) 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
JP3183390B2 (ja) 1995-09-05 2001-07-09 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
US6878977B1 (en) * 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
JP3992504B2 (ja) * 2002-02-04 2007-10-17 富士通株式会社 Ｃｍｏｓイメージセンサ
US20070041063A1 (en) * 2005-08-18 2007-02-22 Matsushita Electric Industrial Co., Ltd. Image sensor
JP4968681B2 (ja) * 2007-07-17 2012-07-04 Ｎｌｔテクノロジー株式会社 半導体回路とそれを用いた表示装置並びにその駆動方法

Also Published As

Publication number Publication date
US20110147598A1 (en) 2011-06-23
US20080224058A1 (en) 2008-09-18
US8274033B2 (en) 2012-09-25
EP2317556A3 (de) 2011-06-08
EP0762504A2 (de) 1997-03-12
US7635835B2 (en) 2009-12-22
US20100108899A1 (en) 2010-05-06
US6297493B1 (en) 2001-10-02
US20040108463A1 (en) 2004-06-10
EP1930949A3 (de) 2011-10-12
US20080001091A1 (en) 2008-01-03
US7170042B2 (en) 2007-01-30
EP1511083A3 (de) 2007-03-14
EP0762504A3 (de) 1998-09-16
US7381938B2 (en) 2008-06-03
EP1930949A2 (de) 2008-06-11
US7915573B2 (en) 2011-03-29
US7285765B2 (en) 2007-10-23
EP1511083A2 (de) 2005-03-02
EP1511083B1 (de) 2009-04-08
EP0762504B1 (de) 2008-10-08
JPH09135013A (ja) 1997-05-20
US20010025916A1 (en) 2001-10-04
EP2317556A2 (de) 2011-05-04
US20070114363A1 (en) 2007-05-24
TW551616U (en) 2003-09-01
US5914485A (en) 1999-06-22
US6664527B2 (en) 2003-12-16
JP3183390B2 (ja) 2001-07-09
DE69637703D1 (de) 2008-11-20

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