DE69703310D1 - Positiv arbeitende photoempfindliche Zusammensetzung - Google Patents

Positiv arbeitende photoempfindliche Zusammensetzung

Info

Publication number
DE69703310D1
DE69703310D1 DE69703310T DE69703310T DE69703310D1 DE 69703310 D1 DE69703310 D1 DE 69703310D1 DE 69703310 T DE69703310 T DE 69703310T DE 69703310 T DE69703310 T DE 69703310T DE 69703310 D1 DE69703310 D1 DE 69703310D1
Authority
DE
Germany
Prior art keywords
photosensitive composition
positive working
working photosensitive
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69703310T
Other languages
English (en)
Other versions
DE69703310T2 (de
Inventor
Toshiaki Aoai
Kazuya Uenishi
Toru Fujimori
Tsukasa Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69703310D1 publication Critical patent/DE69703310D1/de
Publication of DE69703310T2 publication Critical patent/DE69703310T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
DE69703310T 1996-02-05 1997-02-05 Positiv arbeitende photoempfindliche Zusammensetzung Expired - Lifetime DE69703310T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01900196A JP3591672B2 (ja) 1996-02-05 1996-02-05 ポジ型感光性組成物

Publications (2)

Publication Number Publication Date
DE69703310D1 true DE69703310D1 (de) 2000-11-23
DE69703310T2 DE69703310T2 (de) 2001-05-17

Family

ID=11987310

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703310T Expired - Lifetime DE69703310T2 (de) 1996-02-05 1997-02-05 Positiv arbeitende photoempfindliche Zusammensetzung

Country Status (4)

Country Link
US (1) US6013411A (de)
EP (1) EP0788031B1 (de)
JP (1) JP3591672B2 (de)
DE (1) DE69703310T2 (de)

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DE69822632T2 (de) * 1997-07-15 2005-02-17 E.I. Du Pont De Nemours And Co., Wilmington Resiste mit verbesserter auflösungsinhibierung für die mikrolithographie
US6303263B1 (en) * 1998-02-25 2001-10-16 International Business Machines Machines Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups
US6569594B2 (en) * 1998-04-15 2003-05-27 Agfa-Gevaert Heat mode sensitive imaging element for making positive working printing plates
WO2000011520A1 (en) 1998-08-18 2000-03-02 3M Innovative Properties Company Polymers having silicon-containing acetal or ketal functional groups
EP1031878A1 (de) * 1999-02-23 2000-08-30 Shipley Company LLC Neue Polymere und diese enthaltende Fotoresistzusammensetzungen
JP3917318B2 (ja) * 1999-02-24 2007-05-23 富士フイルム株式会社 ポジ型平版印刷用材料
JP3299215B2 (ja) * 1999-03-12 2002-07-08 松下電器産業株式会社 パターン形成方法
TWI226339B (en) * 1999-03-26 2005-01-11 Shinetsu Chemical Co High molecular weight compound and the method to prepare the same
TW527363B (en) * 1999-09-08 2003-04-11 Shinetsu Chemical Co Polymers, chemical amplification resist compositions and patterning process
US6210859B1 (en) * 1999-10-15 2001-04-03 Korea Kumho Petrochemical Co., Ltd. Copolymer for the manufacture of chemical amplified photoresist and a positive photoresist composition using the same
US6509138B2 (en) 2000-01-12 2003-01-21 Semiconductor Research Corporation Solventless, resistless direct dielectric patterning
EP1143300A1 (de) * 2000-04-03 2001-10-10 Shipley Company LLC Photoresistzusammensetzungen und ihre Verwendung
KR100553263B1 (ko) * 2000-04-14 2006-02-20 주식회사 동진쎄미켐 화학 증폭 레지스트용 폴리머 및 이를 이용한 레지스트조성물
EP1193558A3 (de) * 2000-09-18 2002-08-14 JSR Corporation Lichtempfindliche Zusammensetzung
JP4025074B2 (ja) * 2001-09-19 2007-12-19 富士フイルム株式会社 ポジ型レジスト組成物
JP2003233190A (ja) 2001-10-09 2003-08-22 Shipley Co Llc 混合フォト酸レイビル基を有するポリマーおよび該ポリマーを含むフォトレジスト
US20030232273A1 (en) * 2001-10-09 2003-12-18 Shipley Company, L.L.C. Acetal/alicyclic polymers and photoresist compositions
JP3918542B2 (ja) * 2001-12-11 2007-05-23 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US7303852B2 (en) * 2001-12-27 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
US20050003296A1 (en) * 2002-03-15 2005-01-06 Memetea Livia T. Development enhancement of radiation-sensitive elements
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
JP4166598B2 (ja) * 2003-03-12 2008-10-15 富士フイルム株式会社 ポジ型レジスト組成物
JP4088784B2 (ja) * 2003-06-19 2008-05-21 信越化学工業株式会社 高分子化合物の製造方法及びレジスト材料
CN1802603A (zh) * 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
JP2005234584A (ja) * 2004-02-22 2005-09-02 Rohm & Haas Electronic Materials Llc フォトレジスト組成物
FR2869519B1 (fr) * 2004-04-30 2006-06-16 Maurice Granger Appareil distributeur de materiau d'essuyage avec dispositif de coupe integrant une capacite de selection de format
JP2006225476A (ja) * 2005-02-16 2006-08-31 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
JP5223168B2 (ja) * 2006-03-20 2013-06-26 信越化学工業株式会社 化学増幅ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5039492B2 (ja) * 2007-09-28 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
JP5448651B2 (ja) * 2009-08-31 2014-03-19 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及びそれを用いたパターン形成方法

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US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
CH621416A5 (de) 1975-03-27 1981-01-30 Hoechst Ag
JPS5280022A (en) 1975-12-26 1977-07-05 Fuji Photo Film Co Ltd Light solubilizable composition
DE2718254C3 (de) 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
US4173470A (en) 1977-11-09 1979-11-06 Bell Telephone Laboratories, Incorporated Novolak photoresist composition and preparation thereof
DE2829512A1 (de) 1978-07-05 1980-01-17 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
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US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0617991B2 (ja) 1983-06-22 1994-03-09 富士写真フイルム株式会社 光可溶化組成物
JPS6010247A (ja) 1983-06-29 1985-01-19 Fuji Photo Film Co Ltd 光可溶化組成物
JPS60121446A (ja) 1983-12-06 1985-06-28 Fuji Photo Film Co Ltd 光可溶化組成物
JPS6037549A (ja) 1983-08-10 1985-02-26 Fuji Photo Film Co Ltd 光可溶化組成物
JPS6052845A (ja) 1983-09-02 1985-03-26 Japan Synthetic Rubber Co Ltd パタ−ン形成材料
US4837124A (en) 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
DE3750275T3 (de) 1986-06-13 1998-10-01 Microsi Inc Lackzusammensetzung und -anwendung.
JPS6336240A (ja) 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
MY103006A (en) 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
JPH0225850A (ja) 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
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JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
JPH03223860A (ja) 1990-01-30 1991-10-02 Wako Pure Chem Ind Ltd 新規レジスト材料
DE4007924A1 (de) 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
EP0476865A1 (de) * 1990-08-31 1992-03-25 Wako Pure Chemical Industries Ltd Resistmaterial und Verfahren zur Herstellung eines Bildes unter Verwendung desselben
JP3008594B2 (ja) 1990-08-31 2000-02-14 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP3238465B2 (ja) 1991-04-30 2001-12-17 株式会社東芝 パターン形成用レジストおよびパターン形成方法
JP2707164B2 (ja) 1991-05-28 1998-01-28 信越化学工業株式会社 レジスト材
JPH04350657A (ja) 1991-05-28 1992-12-04 Shin Etsu Chem Co Ltd レジスト材
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Also Published As

Publication number Publication date
EP0788031A1 (de) 1997-08-06
EP0788031B1 (de) 2000-10-18
US6013411A (en) 2000-01-11
DE69703310T2 (de) 2001-05-17
JP3591672B2 (ja) 2004-11-24
JPH09211864A (ja) 1997-08-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP