DE69704483T2 - Züchtung von farblosen siliziumcarbidkristallen - Google Patents

Züchtung von farblosen siliziumcarbidkristallen

Info

Publication number
DE69704483T2
DE69704483T2 DE69704483T DE69704483T DE69704483T2 DE 69704483 T2 DE69704483 T2 DE 69704483T2 DE 69704483 T DE69704483 T DE 69704483T DE 69704483 T DE69704483 T DE 69704483T DE 69704483 T2 DE69704483 T2 DE 69704483T2
Authority
DE
Germany
Prior art keywords
silicon carbide
breeding
carbide crystals
crystals
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69704483T
Other languages
English (en)
Other versions
DE69704483D1 (de
Inventor
H Carter
F Tsvetkov
C Glass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of DE69704483D1 publication Critical patent/DE69704483D1/de
Application granted granted Critical
Publication of DE69704483T2 publication Critical patent/DE69704483T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
DE69704483T 1996-02-05 1997-01-24 Züchtung von farblosen siliziumcarbidkristallen Expired - Lifetime DE69704483T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/596,526 US5718760A (en) 1996-02-05 1996-02-05 Growth of colorless silicon carbide crystals
PCT/US1997/001292 WO1997028297A1 (en) 1996-02-05 1997-01-24 Growth of colorless silicon carbide crystals

Publications (2)

Publication Number Publication Date
DE69704483D1 DE69704483D1 (de) 2001-05-10
DE69704483T2 true DE69704483T2 (de) 2001-07-12

Family

ID=24387665

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69704483T Expired - Lifetime DE69704483T2 (de) 1996-02-05 1997-01-24 Züchtung von farblosen siliziumcarbidkristallen

Country Status (11)

Country Link
US (3) US5718760A (de)
EP (1) EP0879305B1 (de)
JP (1) JP3442401B2 (de)
CN (2) CN1291073C (de)
AT (1) ATE200310T1 (de)
AU (1) AU2247297A (de)
CA (1) CA2244262C (de)
DE (1) DE69704483T2 (de)
ES (1) ES2157556T3 (de)
HK (1) HK1017394A1 (de)
WO (1) WO1997028297A1 (de)

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US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
US6559467B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US6476420B2 (en) 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP3598954B2 (ja) * 2000-08-21 2004-12-08 株式会社村田製作所 電圧非直線抵抗体の製造方法
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP3876628B2 (ja) * 2001-02-07 2007-02-07 株式会社デンソー 炭化珪素単結晶の製造方法および炭化珪素単結晶
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
US7553373B2 (en) 2001-06-15 2009-06-30 Bridgestone Corporation Silicon carbide single crystal and production thereof
US20030017932A1 (en) * 2001-07-17 2003-01-23 Vandenbiesen Russell P. Method for making synthetic gems comprising elements recovered from complete or partial human or animal remains and the product thereof
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7211833B2 (en) * 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6749685B2 (en) * 2001-08-16 2004-06-15 Cree, Inc. Silicon carbide sublimation systems and associated methods
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
US6635503B2 (en) 2002-01-28 2003-10-21 Cree, Inc. Cluster packaging of light emitting diodes
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7220313B2 (en) 2003-07-28 2007-05-22 Cree, Inc. Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US20040154528A1 (en) * 2003-02-11 2004-08-12 Page Robert E. Method for making synthetic gems comprising elements recovered from humans or animals and the product thereof
EP1623467B1 (de) * 2003-05-09 2016-12-07 Cree, Inc. LED-Herstellung durch Ionenimplantationsisolierung
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
JP4470690B2 (ja) * 2004-10-29 2010-06-02 住友電気工業株式会社 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法
KR100806999B1 (ko) * 2004-12-28 2008-02-25 마쯔시다덴기산교 가부시키가이샤 탄화규소（ＳｉＣ） 단결정의 제조 방법 및 이에 의해얻어진 탄화규소（ＳｉＣ）단결정
US7276117B2 (en) * 2005-02-09 2007-10-02 Cree Dulles, Inc. Method of forming semi-insulating silicon carbide single crystal
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US20070110657A1 (en) * 2005-11-14 2007-05-17 Hunter Charles E Unseeded silicon carbide single crystals
US20090205561A1 (en) * 2006-06-27 2009-08-20 Osaka University METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME
US8410488B2 (en) * 2006-09-14 2013-04-02 Cree, Inc. Micropipe-free silicon carbide and related method of manufacture
TW200837943A (en) * 2007-01-22 2008-09-16 Led Lighting Fixtures Inc Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
EP3848970A1 (de) 2007-01-22 2021-07-14 Cree, Inc. Emitter mit mehreren leuchtdioden
US8212262B2 (en) 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
US20090056374A1 (en) * 2007-08-31 2009-03-05 Abate Steven L Gemstone Facet Configuration
JP4469396B2 (ja) * 2008-01-15 2010-05-26 新日本製鐵株式会社 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ
JP4697235B2 (ja) * 2008-01-29 2011-06-08 トヨタ自動車株式会社 ｐ型ＳｉＣ半導体単結晶の製造方法およびそれにより製造されたｐ型ＳｉＣ半導体単結晶
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US9437785B2 (en) 2009-08-10 2016-09-06 Cree, Inc. Light emitting diodes including integrated backside reflector and die attach
JP5212343B2 (ja) * 2009-12-08 2013-06-19 新日鐵住金株式会社 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ
JP5839315B2 (ja) * 2010-07-30 2016-01-06 株式会社デンソー 炭化珪素単結晶およびその製造方法
JP5355533B2 (ja) 2010-11-09 2013-11-27 新日鐵住金株式会社 ｎ型ＳｉＣ単結晶の製造方法
US20130055763A1 (en) * 2011-09-02 2013-03-07 Anthonv Ritchie Hearts & Arrows SiC Gemstone
US20130327090A1 (en) * 2011-09-02 2013-12-12 Anthony Ritchie Hearts & Arrows SiC Gemstone
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
CN102965724A (zh) * 2012-12-18 2013-03-13 福建福晶科技股份有限公司 一种双层石英管密封结构提拉法单晶炉
CN103320851A (zh) * 2013-06-05 2013-09-25 中国科学院上海硅酸盐研究所 大尺寸15r 碳化硅晶体的制备方法
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
CN103757703B (zh) * 2014-01-24 2016-08-24 汪长安 一种高纯度大尺寸碳化硅单晶及其制备工艺
CN106480503B (zh) * 2016-12-09 2018-11-20 河北同光晶体有限公司 一种颗粒状碳化硅单晶的生长方法
CN106894090B (zh) * 2017-03-17 2019-09-24 山东大学 一种高质量低电阻率的p型SiC单晶制备方法
JP6903362B1 (ja) 2021-02-05 2021-07-14 株式会社Ｂｒｉｌｌａｒ 合成宝石用結晶体の製造方法
CN117585678A (zh) * 2023-11-30 2024-02-23 宁波合盛新材料有限公司 一种用于pvt炉合成碳化硅粉新热场的吸氮处理方法

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JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
US5363798A (en) * 1993-09-29 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Large area semiconductor wafers
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Also Published As

Publication number Publication date
EP0879305A1 (de) 1998-11-25
US6200917B1 (en) 2001-03-13
DE69704483D1 (de) 2001-05-10
CN1291073C (zh) 2006-12-20
CN1210565A (zh) 1999-03-10
CA2244262A1 (en) 1997-08-07
AU2247297A (en) 1997-08-22
US6025289A (en) 2000-02-15
CA2244262C (en) 2007-12-04
HK1017394A1 (en) 1999-11-19
CN100593591C (zh) 2010-03-10
EP0879305B1 (de) 2001-04-04
JP2000503968A (ja) 2000-04-04
CN1891866A (zh) 2007-01-10
ATE200310T1 (de) 2001-04-15
JP3442401B2 (ja) 2003-09-02
US5718760A (en) 1998-02-17
ES2157556T3 (es) 2001-08-16
WO1997028297A1 (en) 1997-08-07

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